公开(公告)号：US20060034618A1

公开(公告)日：2006-02-16

申请号：US10914989

申请日：2004-08-10

申请人： Young-Kai Chen ,  Ut-Va Koc ,  Andreas Leven

发明人： Young-Kai Chen ,  Ut-Va Koc ,  Andreas Leven

IPC分类号： H04B10/04

CPC分类号： H04B10/2513 ,  H04B10/2569

摘要： An adaptive optical parallel equalizer architecture is based on a controllable optical modulator device to realize an optical FIR (finite-impulse-response) filter including a plurality of coefficient taps in order to have independent control of each optical FIR filter coefficient. A unique adaptive opto-electronic LMS (least mean squares) process is utilized to generate an electronic error signal utilized to control the plurality of parallel tap coefficients of the optical parallel equalizer. The electronic error signal is used as the optimization criterion because the electronic signal after photo-detection is needed to achieve any measurable performance in terms of bit error rate (BER). In a specific embodiment, the controllable optical parallel FIR filter is realized by employing an optical vector modulator. The optical vector modulator is realized by splitting a supplied input optical signal into a plurality of parallel similar optical signals, controllably adjusting the phase and/or amplitude of each of the plurality of optical signals and delaying the resulting optical signals in a prescribed manner relative to one another. Then, the “delayed” signals are combined to yield the optical signal comprising the vector modulated input optical signal to be transmitted as an output. In one particular embodiment, both the phase and amplitude is adjusted of each of the plurality of parallel optical signals, and the error control signals for effecting the adjustments are generated in response to the optical modulator optical output signal utilizing the unique Opto-Electronic LMS process.

摘要翻译： 自适应光学并行均衡器架构基于可控光调制器装置，以实现包括多个系数抽头的光FIR（有限脉冲响应）滤波器，以便对每个光FIR滤波器系数进行独立控制。 使用独特的自适应光电LMS（最小均方）处理来产生用于控制光学并行均衡器的多个并行抽头系数的电子误差信号。 电子误差信号被用作优化标准，因为需要光电检测后的电子信号来实现在误码率（BER）方面的任何可测量的性能。 在具体实施例中，通过采用光矢量调制器来实现可控光并行FIR滤波器。 光矢量调制器通过将提供的输入光信号分成多个平行的相似的光信号来实现，可控制地调节多个光信号中的每一个的信号的相位和/或幅度，并以相对于 另一个。 然后，“延迟”信号被组合以产生包括作为输出发送的矢量调制输入光信号的光信号。 在一个特定实施例中，相位和振幅都被调整为多个平行光信号中的每一个，并且用于进行调整的误差控制信号响应于使用独特的光电LMS处理的光调制器光输出信号 。

公开(公告)号：US06911716B2

公开(公告)日：2005-06-28

申请号：US10243369

申请日：2002-09-13

申请人： Young-Kai Chen ,  Lay-Lay Chua ,  Vincent Etienne Houtsma ,  Rose Fasano Kopf ,  Andreas Leven ,  Chun-Ting Liu ,  Wei-Jer Sung ,  Yang Yang

发明人： Young-Kai Chen ,  Lay-Lay Chua ,  Vincent Etienne Houtsma ,  Rose Fasano Kopf ,  Andreas Leven ,  Chun-Ting Liu ,  Wei-Jer Sung ,  Yang Yang

IPC分类号： H01L21/331 ,  H01L29/737 ,  H01L27/082

CPC分类号： H01L29/66318 ,  H01L29/7371

摘要： A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.

摘要翻译： 一种用于制造双极晶体管的方法，包括形成垂直的半导体层序列，在最后形成的半导体层上形成注入掩模，以及将掺杂离子注入到一个或多个半导体层的一部分中。 半导体层的序列包括集电极层，与集电极层接触的基极层和与基极层接触的发射极层。 植入使用其中植入掩模阻止掺杂剂离子渗入层序列的一部分的过程。

公开(公告)号：US08238017B2

公开(公告)日：2012-08-07

申请号：US12641601

申请日：2009-12-18

申请人： Kun-Yii Tu ,  Ting-Chen Hu ,  Young-Kai Chen

发明人： Kun-Yii Tu ,  Ting-Chen Hu ,  Young-Kai Chen

IPC分类号： G02F1/01

CPC分类号： G02F1/011 ,  G02F1/0123 ,  G02F2201/122 ,  G02F2203/50 ,  H04B10/60

摘要： An optical path is configured to propagate an input optical signal. A plurality of electrodes are configured to produce a plurality of discrete phase shifts on the optical signal. An output optical signal is phase-shifted with respect to the input optical signal by a sum of the plurality of discrete phase shifts.

摘要翻译： 光路被配置为传播输入光信号。 多个电极被配置为在光信号上产生多个离散相移。 输出光信号相对于输入光信号通过多个离散相移的和进行相移。

公开(公告)号：US20120008961A1

公开(公告)日：2012-01-12

申请号：US12915506

申请日：2010-10-29

申请人： Young-Kai Chen ,  Noriaki Kaneda ,  Alex Pidwerbetsky

发明人： Young-Kai Chen ,  Noriaki Kaneda ,  Alex Pidwerbetsky

IPC分类号： H04B10/00

CPC分类号： H04B10/1121 ,  H04B10/613

摘要： An approach is provided that uses diversity to compensate fading of free-space optical (FSO) signals propagating through an environment characterized by atmospheric scintillation. One embodiment involves collecting at least one FSO beam, demultiplexing the beam by wavelength into at least two sub-beams, detecting each sub-beam to produce an electrical output therefrom, and recovering a signal using complementary information from at least two of the electrical outputs. Another embodiment involves collecting the FSO beam onto an array of spatially separated sub-apertures, detecting the light entering each sub-aperture to produce an electrical output therefrom, and recovering a signal using complementary information from at least two of the electrical outputs. This second embodiment enables both electronic adaptive processing to coherently integrate across the sub-apertures and in the case of multiple transmit apertures a free space optical Multiple Input Multiple Output (MIMO) system.

摘要翻译： 提供了一种使用分集来补偿通过大气闪烁特征的环境传播的自由空间光（FSO）信号的衰落的方法。 一个实施例涉及收集至少一个FSO波束，通过波长将光束解复用为至少两个子波束，检测每个子波束以产生电输出，以及使用来自至少两个电输出的补充信息来恢复信号 。 另一个实施例涉及将FSO光束收集到空间上分离的子孔径阵列上，检测进入每个子孔径的光以产生其电输出，以及使用来自至少两个电输出的补充信息来恢复信号。 该第二实施例使得电子自适应处理能够在子孔径之间相干地集成，并且在多个发射孔径的情况下使得自由空间光学多输入多输出（MIMO）系统。

公开(公告)号：US08073345B2

公开(公告)日：2011-12-06

申请号：US11644536

申请日：2006-12-22

申请人： Young-Kai Chen ,  Noriaki Kaneda ,  Ut-Va Koc ,  Andreas Bertold Leven

发明人： Young-Kai Chen ,  Noriaki Kaneda ,  Ut-Va Koc ,  Andreas Bertold Leven

IPC分类号： H04B10/06

CPC分类号： H04B10/611 ,  H04B10/61 ,  H04B10/6161 ,  H04B10/6164 ,  H04B10/6165 ,  H04B10/6166

摘要： A method for determining symbols PSK modulated on an optical carrier includes interfering a first polarization component of the modulated optical carrier and a reference optical carrier in a first optical mixer and interfering the first polarization component of the modulated optical carrier and the reference with a different relative phase in a second optical mixer. The method also includes sampling the interfered carriers from the first optical mixer to produce first digital sampled values and sampling the interfered carriers from the second optical mixer to produce second digital sampled values. The first and second digital sampled values of a sampling period form a first complex sampling value thereof. The method also includes offsetting a phase of a complex signal value corresponding to each first complex sampling value to correct for a phase error caused by a frequency offset between the modulated and reference optical carriers.

摘要翻译： 一种用于确定在光载波上调制的符号PSK的方法包括：在第一光混合器中干扰调制光载波的第一偏振分量和参考光载波，并将调制的光载波的第一偏振分量与参考用不同的相对 在第二光学混合器中。 该方法还包括对来自第一光混合器的受干扰载波进行采样，以产生第一数字采样值，并对来自第二光混合器的干扰载波进行采样以产生第二数字采样值。 采样周期的第一和第二数字采样值形成其第一复数采样值。 该方法还包括抵消对应于每个第一复数采样值的复信号值的相位，以校正由调制参考光载波之间的频率偏移引起的相位误差。

公开(公告)号：US07956788B2

公开(公告)日：2011-06-07

申请号：US12387301

申请日：2009-04-30

申请人： Jaesik Lee ,  Young-Kai Chen

发明人： Jaesik Lee ,  Young-Kai Chen

IPC分类号： H03M1/12

CPC分类号： H03M1/1215 ,  G02F7/00

摘要： In an inventive photonic analog-to-digital signal converter (ADC), multiple opto-electric sampling devices are employed to successively sample an analog signal input. Optical clock signals having the same frequency but different clock phases are used, which are associated with the opto-electric sampling devices, respectively. Each sampling device takes samples of the analog signal input in response to the optical clock signal associated therewith. The resulting samples are processed to produce quantized samples. The inventive ADC outputs a digital signal representing the quantized samples.

摘要翻译： 在本发明的光子模拟 - 数字信号转换器（ADC）中，采用多个光电采样装置来连续采样模拟信号输入。 使用具有相同频率但不同时钟相位的光时钟信号，它们分别与光电采样装置相关联。 每个采样装置响应于与其相关联的光时钟信号来采样模拟信号输入。 处理所得样品以产生量化样品。 本发明的ADC输出表示量化样本的数字信号。

公开(公告)号：US20090214223A1

公开(公告)日：2009-08-27

申请号：US12035677

申请日：2008-02-22

申请人： Young-Kai Chen ,  Sanjay Patel ,  Mahmoud Rasras ,  Kun-Yii Tu

发明人： Young-Kai Chen ,  Sanjay Patel ,  Mahmoud Rasras ,  Kun-Yii Tu

IPC分类号： H04B10/04

CPC分类号： H04B10/00 ,  H04B2210/006

摘要： According to one embodiment, a microwave photonic band-stop (MPBS) filter uses an electrical input signal to drive an optical Mach-Zehnder modulator. A modulated optical carrier produced by the modulator is applied to an optical filter having at least two tunable spectral attenuation bands that are located substantially symmetrically on either side of the carrier frequency. The resulting filtered optical signal is applied to an optical-to-electrical (O/E) converter to produce an electrical output signal.

摘要翻译： 根据一个实施例，微波光子带阻（MPBS）滤波器使用电输入信号来驱动光学马赫 - 曾德尔调制器。 由调制器产生的调制光载波被应用于具有至少两个可调频谱衰减频带的滤光器，该衰减频带基本对称地位于载波频率的任一侧上。 所得到的经滤波的光信号被施加到光电（O / E）转换器以产生电输出信号。

公开(公告)号：US20050032323A1

公开(公告)日：2005-02-10

申请号：US10624038

申请日：2003-07-21

申请人： Young-Kai Chen ,  Rose Kopf ,  Wei-Jer Sung ,  Nils Weimann

发明人： Young-Kai Chen ,  Rose Kopf ,  Wei-Jer Sung ,  Nils Weimann

IPC分类号： H01L21/00 ,  H01L21/331 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H01L29/732 ,  H01L29/737

CPC分类号： H01L29/66318 ,  H01L29/0821 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/7371

摘要： A method for fabricating a bipolar transistor includes forming collector, base, and emitter semiconductor layers on a substrate such that the layers form a vertical sequence with respect to an adjacent surface of the substrate. The method includes etching away a portion of a top one of the semiconductor layers to expose a portion of the base semiconductor layer and then, growing semiconductor on the exposed portion of the base layer. The top one of the semiconductor layers is the layer of the sequence that is located farthest from the substrate. The growing causes grown semiconductor to laterally surround a vertical portion of the top one of the semiconductor layers.

摘要翻译： 制造双极晶体管的方法包括在基板上形成集电极，基极和发射极半导体层，使得这些层相对于基板的相邻表面形成垂直的顺序。 该方法包括蚀刻远离半导体层顶部的一部分以露出基底半导体层的一部分，然后在基底层的暴露部分上生长半导体。 半导体层中的顶部之一是距离衬底最远的序列层。 生长的原因使半导体横向围绕半导体层顶部的垂直部分。

公开(公告)号：US06271069B1

公开(公告)日：2001-08-07

申请号：US09122558

申请日：1998-07-24

申请人： Young-Kai Chen ,  Alfred Yi Cho ,  William Scott Hobson ,  Minghwei Hong ,  Jenn-Ming Kuo ,  Jueinai Raynien Kwo ,  Donald Winslow Murphy ,  Fan Ren

发明人： Young-Kai Chen ,  Alfred Yi Cho ,  William Scott Hobson ,  Minghwei Hong ,  Jenn-Ming Kuo ,  Jueinai Raynien Kwo ,  Donald Winslow Murphy ,  Fan Ren

IPC分类号： H01L2976

CPC分类号： H01L29/517 ,  C23C14/08 ,  H01L21/28158 ,  H01L21/28264 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/66522 ,  H01L29/78 ,  H01L33/44 ,  H01S5/028

摘要： Disclosed are a method of making GaAs-based enhancement-type MOS-FETs, and articles (e.g., GaAs-based ICs) that comprise such a MOS-FET. The MOS-FETs are planar devices, without etched recess or epitaxial re-growth, with gate oxide that is primarily Ga2O3, and with low midgap interface state density (e.g., at most 1×1011 cm−2 eV−1 at 20° C.). The method involves ion implantation, implant activation in an As-containing atmosphere, surface reconstruction, and in situ deposition of the gate oxide. In preferred embodiments, no processing step subsequent to gate oxide formation is carried out above 300° C. in air, or above about 700° C. in UHV. The method makes possible fabrication of planar enhancement-type MOS-FETs having excellent characteristics, and also makes possible fabrication of complementary MOS-FETs, as well as ICs comprising MOS-FETs and MES-FETs. The method includes deposition of gate oxide of overall composition GaxAyOz, where Ga substantially is in the 3+ oxidation state, A is one or more electropositive stabilizer element adapted for stabilizing Ga in the 3+ oxidation state, x is greater than or equal to zero, z is selected to satisfy the requirement that both Ga and A are substantially fully oxidized, and y/(x+y) is greater than 0.1.

摘要翻译： 公开了制造基于GaAs的增强型MOS-FET的方法以及包括这种MOS-FET的制品（例如，基于GaAs的IC）。 MOS-FET是没有蚀刻凹槽或外延再生长的平面器件，其栅极氧化物主要是Ga 2 O 3，并且具有低的中间隙界面态密度（例如，在20℃下至多为1×10 11 cm -2 eV-1） 。 该方法涉及离子注入，在含As气氛中的注入活化，表面重构和栅极氧化物的原位沉积。 在优选的实施方案中，栅极氧化物形成之后的处理步骤在高于300℃的空气中或在高于约700℃的UHV中进行。 该方法可以制造具有优异特性的平面增强型MOS-FET，并且还可以制造互补MOS-FET以及包括MOS-FET和MES-FET的IC。 该方法包括沉积总体组成为GaxAyOz的栅极氧化物，其中Ga基本上处于3+氧化态，A是一种或多种适用于稳定3+氧化态的Ga的正电荷稳定剂元素，x大于或等于零 选择z以满足Ga和A基本上完全氧化，y /（x + y）大于0.1的要求。

公开(公告)号：US06208846B1

公开(公告)日：2001-03-27

申请号：US08782355

申请日：1997-01-13

申请人： Young-Kai Chen ,  Sanjay Kasturia ,  Jenshan Lin ,  Huan-Shang Tsai

发明人： Young-Kai Chen ,  Sanjay Kasturia ,  Jenshan Lin ,  Huan-Shang Tsai

IPC分类号： H04B104

CPC分类号： H04W52/52 ,  H03F2203/7239 ,  H04B2001/0416

摘要： A circuit that increases the efficiency of a radio frequency mobile telephone unit is disclosed. When the signal strength between the base station and the mobile unit is below a predetermined signal strength level, the power amplifier is turned on and the transmitter circuit of the mobile unit fully amplifies the RF signal. However, when the signal strength between the mobile telephone unit and the base station is above a predetermined signal strength level, the power amplifier is deactivated and bypassed from the transmitter circuitry, thereby conserving the battery power of the mobile unit.

摘要翻译： 公开了一种提高射频移动电话机的效率的电路。 当基站和移动单元之间的信号强度低于预定信号强度电平时，功率放大器导通，移动单元的发射机电路完全放大RF信号。 然而，当移动电话单元和基站之间的信号强度高于预定的信号强度水平时，功率放大器被去激活并从发射机电路旁路，从而节省了移动单元的电池功率。