STRUCTURE AND METHOD OF MAKING A FIELD EFFECT TRANSISTOR HAVING AN ASYMMETRICALLY STRESSED CHANNEL REGION
    41.
    发明申请
    STRUCTURE AND METHOD OF MAKING A FIELD EFFECT TRANSISTOR HAVING AN ASYMMETRICALLY STRESSED CHANNEL REGION 有权
    制造具有非对称应力通道区域的场效应晶体管的结构和方法

    公开(公告)号:US20060255415A1

    公开(公告)日:2006-11-16

    申请号:US10908448

    申请日:2005-05-12

    IPC分类号: H01L29/76

    摘要: A field effect transistor is provided which includes a contiguous single-crystal semiconductor region in which a source region, a channel region and a drain region are disposed. The channel region has an edge in common with the source region as a source edge, and the channel region further has an edge in common with the drain region as a drain edge. A gate conductor overlies the channel region. The field effect transistor further includes a structure which applies a stress at a first magnitude to only one of the source edge and the drain edge while applying the stress at no greater than a second magnitude to another one of the source edge and the drain edge, wherein the second magnitude has a value ranging from zero to about half the first magnitude. In a particular embodiment, the stress is applied at the first magnitude to the source edge while the zero or lower magnitude stress is applied to the drain edge. In another embodiment, the stress is applied at the first magnitude to the drain edge while the zero or lower magnitude stress is applied to the drain edge.

    摘要翻译: 提供一种场效应晶体管,其包括其中设置有源极区,沟道区和漏极区的邻接单晶半导体区。 沟道区域具有与源极区域共同的边缘作为源极边缘,并且沟道区域还具有与作为漏极边缘的漏极区域共同的边缘。 栅极导体覆盖沟道区域。 场效应晶体管还包括将源极边缘和漏极边缘的另一个施加不大于第二幅度的应力的第一幅度的应力仅施加到源极边缘和漏极边缘中的一个的结构, 其中所述第二幅度具有从零到所述第一幅度的大约一半的值。 在特定实施例中,将应力以第一幅度施加到源极边缘,同时零或较小幅度应力施加到漏极边缘。 在另一个实施例中,将应力以第一幅度施加到漏极边缘,同时将零或较小的幅度应力施加到漏极边缘。

    Transconductance-enhancing passive frequency mixer
    42.
    发明授权
    Transconductance-enhancing passive frequency mixer 有权
    跨导增强型无源混频器

    公开(公告)号:US08933745B2

    公开(公告)日:2015-01-13

    申请号:US13980355

    申请日:2012-05-29

    IPC分类号: G06G7/12 H03H11/04 H03D7/14

    摘要: A transconductance-enhancing passive frequency mixer comprises a transconductance amplification stage, a frequency mixing stage, and an output transresistance amplifier. The transconductance amplification stage has a pre-amplification transconductance-enhancing structure, so that the transconductance is greatly enhanced, thereby obtaining the same transconductance value at a lower bias current. A radio-frequency current is modulated by the frequency mixing stage to generate an output mid-frequency current signal. The mid-frequency current signal passes through the transresistance amplifier, to form voltage output, and finally obtain a mid-frequency voltage signal. The transresistance amplifier has a transconductance-enhancing structure, thereby further reducing input impedance, and improving current utilization efficiency and port isolation. The frequency mixer has the characteristics of low power consumption, high conversion gain, good port isolation, and the like.

    摘要翻译: 跨导增强型无源混频器包括跨导放大级,频率混频级和输出跨阻放大器。 跨导放大级具有预放大跨导增强结构,使得跨导大大增强,从而在较低偏置电流下获得相同的跨导值。 射频电流由混频级调制以产生输出中频电流信号。 中频电流信号通过跨阻放大器,形成电压输出,最后得到中频电压信号。 跨阻放大器具有跨导增强结构,从而进一步降低输入阻抗,提高电流利用效率和端口隔离。 该混频器具有低功耗,高转换增益,良好的端口隔离等特点。

    Method for Intermittently Producing 4,4'-Diaminodicyclohexylmethane with a Low Amount of the Trans-trans Isomer
    43.
    发明申请
    Method for Intermittently Producing 4,4'-Diaminodicyclohexylmethane with a Low Amount of the Trans-trans Isomer 有权
    间歇生产低反式异构体的4,4'-二氨基二环己基甲烷的方法

    公开(公告)号:US20120323041A1

    公开(公告)日:2012-12-20

    申请号:US13517195

    申请日:2011-06-03

    IPC分类号: C07C209/00

    摘要: The present invention discloses a method for intermittently producing 4,4′-diaminodicyclohexyl methane (H12MDA) with a low amount of the trans-trans isomer thereof, which comprises: controlling the reaction process by stopping the reaction when, except for a solvent, the reaction solution comprises MDA of 0-5 wt % and H6MDA of 1-20 wt %; and b) separating the reaction solution obtained from step a) by conventional means to obtain H12MDA product with desired purity, and allowing the un-reacted material and intermediate product to be recycled to the reactor after being accumulated. The method of the present invention decreases the amount of the trans-trans isomer in H12MDA, increases the yield of the reaction, and reduces the production cost. The present invention also provides a post treatment process of the reaction mixture.

    摘要翻译: 本发明公开了间歇地制备低反式异构体的4,4'-二氨基二环己基甲烷(H12MDA)的方法,该方法包括:除溶剂外,通过停止反应来控制反应过程 反应溶液包含0-5重量%的MDA和1-20重量%的H6MDA; 和b)通过常规方法分离由步骤a)获得的反应溶液以获得具有所需纯度的H12MDA产物,并且使未反应的材料和中间产物在积聚后再循环到反应器中。 本发明的方法降低了H12MDA中反式异构体的量,提高了反应的产率,降低了生产成本。 本发明还提供了反应混合物的后处理方法。

    Differential junction varactor
    46.
    发明授权
    Differential junction varactor 失效
    微分结变容二极管

    公开(公告)号:US07692271B2

    公开(公告)日:2010-04-06

    申请号:US11679987

    申请日:2007-02-28

    IPC分类号: H01L29/93

    摘要: Structure and methods for a differential junction varactor. The structure includes: a silicon first region formed in a silicon substrate, the first region of a first dopant type; and a plurality of silicon second regions in physical and electrical contact with the first region, the plurality of second regions spaced apart and not in physical contact with each other, the plurality of second regions of a second dopant type, the first dopant type different from the second dopant type; a cathode terminal electrically connected to the first region; a first anode terminal electrically connected to a first set of second regions of the plurality of second regions; and a second anode terminal electrically connected to a second set of second silicon regions of the plurality of second regions, second regions of the first set of second regions alternating with second regions of the second set of second regions.

    摘要翻译: 差分结变容二极管的结构和方法。 该结构包括:形成在硅衬底中的硅第一区域,第一掺杂剂类型的第一区域; 以及与所述第一区域物理和电接触的多个硅第二区域,所述多个第二区域间隔开并且不彼此物理接触,所述多个第二掺杂剂类型的第二区域不同于 第二掺杂剂类型; 电连接到第一区域的阴极端子; 电连接到所述多个第二区域中的第一组第二区域的第一阳极端子; 以及第二阳极端子,电连接到所述多个第二区域中的第二组第二硅区域,所述第一组第二区域的第二区域与所述第二组第二区域的第二区域交替。

    System and Method for Timeslot and Channel Allocation
    47.
    发明申请
    System and Method for Timeslot and Channel Allocation 有权
    时隙和信道分配的系统和方法

    公开(公告)号:US20080137620A1

    公开(公告)日:2008-06-12

    申请号:US11952948

    申请日:2007-12-07

    IPC分类号: H04Q7/00

    摘要: A distributed multi-channel TDMA MAC time slot and channel allocation algorithm for wireless networks is provided. The time slot and channel allocation includes a distributed allocation phase and an allocation adjustment phase. Each phase begins allocation at a first node and continues node-by-node until the last node in the network. The allocation then reflects back from the last node to the first node. At each node in the path, the node can initiate resource allocation between itself and its neighbor nodes. Nodes that are within range of the wireless network but are not on the path do not initiate resource allocation but instead participate in the resource allocation initiated from other nodes.

    摘要翻译: 提供了一种用于无线网络的分布式多信道TDMA MAC时隙和信道分配算法。 时隙和信道分配包括分布式分配阶段和分配调整阶段。 每个阶段在第一个节点开始分配,并逐个节点继续直到网络中的最后一个节点。 然后,分配从最后一个节点反射回第一个节点。 在路径中的每个节点,节点可以发起自身与其邻居节点之间的资源分配。 在无线网络范围内但不在路径上的节点不启动资源分配,而是参与从其他节点发起的资源分配。

    Method and apparatus for improving integrated circuit device performance using hybrid crystal orientations
    48.
    发明授权
    Method and apparatus for improving integrated circuit device performance using hybrid crystal orientations 有权
    使用混合晶体取向提高集成电路器件性能的方法和装置

    公开(公告)号:US07382029B2

    公开(公告)日:2008-06-03

    申请号:US11161337

    申请日:2005-07-29

    IPC分类号: H01L29/76 H01L21/8234

    CPC分类号: H01L21/823807 H01L29/045

    摘要: A method for implementing a desired offset in device characteristics of an integrated circuit includes forming a first device of a first conductivity type on a first portion of a substrate having a first crystal lattice orientation, and forming a second device of the first conductivity type on a second portion of the substrate having a second crystal lattice orientation. The carrier mobility of the first device formed on the first crystal lattice orientation is greater than the carrier mobility of the second device formed on the second crystal lattice orientation.

    摘要翻译: 在集成电路的器件特性中实现期望偏移的方法包括在具有第一晶格取向的衬底的第一部分上形成第一导电类型的第一器件,以及在第一导电类型的第一部分上形成第一导电类型的第二器件 所述基板的第二部分具有第二晶格取向。 形成在第一晶格取向上的第一器件的载流子迁移率大于在第二晶格取向上形成的第二器件的载流子迁移率。

    Distributed TDMA for wireless mesh network
    49.
    发明申请
    Distributed TDMA for wireless mesh network 审中-公开
    分布式TDMA用于无线网状网络

    公开(公告)号:US20050201340A1

    公开(公告)日:2005-09-15

    申请号:US11076738

    申请日:2005-03-09

    摘要: Systems and methods are provided that facilitate distributed TDMA communication amongst nodes in an ad hoc wireless network without the need for centralized management and control. A wireless communication device includes a MAC layer that is configured to synchronize its local clock from a beacon frame that is sent by another node in the ad hoc network. After synchronizing its clock to the ad hoc network, the device identifies a timeslot for transmission. When the timeslot arrives, the device senses the channel to determine if there is traffic and if there is no traffic, the device reserves the timeslot by transmitting. In this fashion, a plurality of timeslots can be divided amongst the devices in the ad hoc wireless network for optimized collision free communication using distributed TDMA. This distributed TDMA communication can also be applied across multiple channels in a wireless network to significantly increase bandwidth and quality-of-service.

    摘要翻译: 提供了在ad hoc无线网络中的节点之间促进分布式TDMA通信而不需要集中管理和控制的系统和方法。 无线通信设备包括被配置为使其本地时钟与从自组织网络中的另一节点发送的信标帧同步的MAC层。 在将时钟同步到自组织网络之后,设备识别用于传输的时隙。 当时隙到达时,设备感知通道以确定是否有流量,如果没有流量,则设备通过发送保留时隙。 以这种方式,可以在自组织无线网络中的设备之间划分多个时隙,以便优化使用分布式TDMA的无冲突通信。 这种分布式TDMA通信也可以在无线网络中的多个信道上应用,以显着增加带宽和服务质量。

    Cross-coupled voltage controlled oscillator with improved phase noise performance
    50.
    发明授权
    Cross-coupled voltage controlled oscillator with improved phase noise performance 有权
    具有改善相位噪声性能的交叉耦合压控振荡器

    公开(公告)号:US06680657B2

    公开(公告)日:2004-01-20

    申请号:US10162579

    申请日:2002-06-06

    IPC分类号: H03B100

    摘要: A cross-coupled voltage controlled oscillator having reduced phase noise. A pair of bipolar transistors having common emitter connections are coupled to reduce that oscillation frequency which is determined from a tuning circuit connected across the collectors of transistors. First and second varactor diodes provide analog tuning of the circuit, and a digitally controlled capacitor provides for a selection of a band of frequencies to be tuned by the varactor diodes. A current source provides the current to the emitter connections of the bipolar transistors. Second harmonic signals generated at the emitter of the transistors are significantly suppressed by a tuned filtered trap connected to the common emitter connections. By reducing the second harmonic signals, the phase noise or the voltage controlled oscillator can be significantly improved.

    摘要翻译: 具有降低的相位噪声的交叉耦合压控振荡器。 耦合具有公共发射极连接的一对双极型晶体管,以减小由连接在晶体管的集电极上的调谐电路确定的振荡频率。 第一和第二变容二极管提供电路的模拟调谐,并且数字控制电容器用于选择要由变容二极管调谐的频带。 电流源将电流提供给双极晶体管的发射极连接。 通过连接到公共发射器连接的调谐的滤波陷波,显着地抑制在晶体管的发射极处产生的二次谐波信号。 通过减少二次谐波信号,可以显着提高相位噪声或压控振荡器。