公开(公告)号：US08187485B2

公开(公告)日：2012-05-29

申请号：US12840847

申请日：2010-07-21

Applicant: Hiroyuki Kobayashi ,  Masaru Izawa

Inventor： Hiroyuki Kobayashi ,  Masaru Izawa

IPC: H01L21/465

CPC classification number: H01J37/32642 ,  H01J37/32623 ,  H01J2237/335 ,  H01L21/67207 ,  H01L21/68735 ,  H01L21/68785 ,  Y10S156/915

Abstract: A diameter of a mounting unit of the stage of an ashing processing apparatus is less than a diameter of a mounting unit of the stage of an etching processing apparatus, and the diameter of the mounting unit of the stage of the etching processing apparatus is less than a diameter of an objective item.

公开(公告)号：US20110247649A1

公开(公告)日：2011-10-13

申请号：US13124261

申请日：2009-10-16

Applicant: Norbertus Benedictus Koster ,  René Koops ,  Kemal Agovic ,  Fokko Pieter Wieringa

Inventor： Norbertus Benedictus Koster ,  René Koops ,  Kemal Agovic ,  Fokko Pieter Wieringa

IPC: B08B7/00 ,  B08B13/00

CPC classification number: A61L2/14 ,  A61L2/28 ,  H01J37/32431 ,  H01J2237/335

Abstract: The invention relates to a method of cleaning and/or sterilization of an object provided in a hermetically sealed enclosure, providing a pressure difference between an internal volume of the enclosure and surroundings and generating a plasma solely inside the enclosure for said cleaning and/or sterilization of the object. The invention further relates to an apparatus for enabling the same. The apparatus 10 comprises a vacuum chamber 1, which can be evacuated using a vacuum pump 2, and a source 3 arranged to generate plasma of a suitable gas in an enclosure 8, which is substantially hermetically closed with respect to the atmosphere of the vacuum chamber. The enclosure 8 may be of a flexible type or may be manufactured from a rigid material. In case when the enclosure is rigid the pressure inside the enclosure may be lower than an outside pressure.

Abstract translation: 本发明涉及一种清洁和/或杀菌的方法，所述物体设置在气密密封的外壳中，在外壳的内部容积与周围环境之间提供压力差，并且仅在外壳内部产生用于所述清洁和/或灭菌的等离子体 的对象。 本发明还涉及一种用于实现该装置的装置。 设备10包括可以使用真空泵2抽真空的真空室1和排出成在外壳8中产生合适气体的等离子体的源3，该外壳8相对于真空室的气氛基本气密地闭合 。 外壳8可以是柔性类型的，或者可以由刚性材料制造。 在外壳刚性的情况下，外壳内的压力可能低于外部压力。

公开(公告)号：US07858898B2

公开(公告)日：2010-12-28

申请号：US11698191

申请日：2007-01-26

Applicant: Andrew D. Bailey, III ,  Alan M. Schoepp ,  Gregory Sexton ,  Andras Kuthi ,  Yunsang Kim ,  William S. Kennedy

Inventor： Andrew D. Bailey, III ,  Alan M. Schoepp ,  Gregory Sexton ,  Andras Kuthi ,  Yunsang Kim ,  William S. Kennedy

IPC: B23K10/00

CPC classification number: H01L21/0209 ,  H01J37/32366 ,  H01J37/32568 ,  H01J2237/335 ,  H01L21/67069

Abstract: A device for cleaning a bevel edge of a semiconductor substrate. The device includes a lower electrode assembly that has a top surface and is adapted to support the substrate and an upper electrode assembly that has a bottom surface opposing the top surface. The lower and upper electrode assemblies generate plasma for cleaning the bevel edge of the substrate disposed between the top and bottom surfaces during operation. The device also includes a mechanism for suspending the upper electrode assembly over the lower support and adjusting the tilt angle and horizontal translation of the bottom surface relative to the top surface.

Abstract translation: 一种用于清洁半导体衬底的斜边缘的装置。 该装置包括具有顶表面并适于支撑基底的下电极组件和具有与顶表面相对的底表面的上电极组件。 下部和上部电极组件在操作期间产生用于清洁设置在顶部和底部表面之间的衬底的斜面边缘的等离子体。 该装置还包括用于将上电极组件悬挂在下支撑件上并且调节底表面相对于顶表面的倾斜角度和水平平移的机构。

公开(公告)号：US07815738B2

公开(公告)日：2010-10-19

申请号：US11459819

申请日：2006-07-25

Applicant: Ignacio Blanco ,  Jin Zhao ,  Nathan Kruse

Inventor： Ignacio Blanco ,  Jin Zhao ,  Nathan Kruse

IPC: C23C16/455 ,  H01L21/306

CPC classification number: H01J37/32082 ,  B08B7/0035 ,  C23C16/4405 ,  H01J2237/335 ,  Y10S438/905

Abstract: The present invention provides, in one embodiment, a process for cleaning a deposition chamber (100). The process includes a step (100) of forming a reactive plasma cleaning zone by dissociating a gaseous fluorocompound introduced into a deposition chamber having an interior surface and in a presence of a plasma. The process (100) further includes a step (120) of ramping a flow rate of said gaseous fluorocompound to move the reactive plasma cleaning zone throughout the deposition chamber, thereby preventing a build-up of localized metal compound deposits on the interior surface. Other embodiments advantageously incorporate the process (100) into a system (200) for cleaning a deposition chamber (205) and a method of manufacturing semiconductor devices (300).

Abstract translation: 在一个实施例中，本发明提供了一种用于清洁沉积室（100）的方法。 该方法包括通过使引入到具有内表面并且存在等离子体的沉积室中的气态氟化合物离解形成反应性等离子体清洗区的步骤（100）。 方法（100）还包括使所述气体氟化合物的流速升高以使整个沉积室中的反应性等离子体清洗区域移动的步骤（120），从而防止局部金属化合物沉积在内表面上。 其他实施例有利地将工艺（100）并入到用于清洁沉积室（205）的系统（200）和制造半导体器件（300）的方法中。

公开(公告)号：US20090277471A1

公开(公告)日：2009-11-12

申请号：US12273076

申请日：2008-11-18

Applicant: Se-Won Lee ,  Jae-Jeong Jeong ,  Jung-Gun Cho

Inventor： Se-Won Lee ,  Jae-Jeong Jeong ,  Jung-Gun Cho

IPC: B08B7/00 ,  B08B13/00

CPC classification number: H01L21/67028 ,  H01J2237/335

Abstract: A substrate cleaning apparatus includes a supporting plate supporting a substrate and a shielding unit that is disposed above the substrate to protect the substrate. A portion of the shielding unit, which is adjacent to a focal point where light for generating shock waves is focused, is switched. Therefore, the substrate cleaning apparatus prevents the concentration of plumes and residence beams, which are generated together with the shock waves, on a specific region of the shielding unit and further prevents the recontamination of the substrate by the damage of the shielding unit.

Abstract translation: 基板清洁装置包括支撑基板的支撑板和设置在基板上方以保护基板的屏蔽单元。 屏蔽单元的与用于产生冲击波的光聚焦的焦点相邻的部分被切换。 因此，基板清洗装置防止与冲击波一起产生的羽流和滞留束的集中在屏蔽单元的特定区域上，并且进一步防止由屏蔽单元的损坏引起的基板的再污染。

公开(公告)号：US20080179297A1

公开(公告)日：2008-07-31

申请号：US11698191

申请日：2007-01-26

Applicant: Andrew D. Bailey ,  Alan M. Schoepp ,  Gregory Sexton ,  Andras Kuthi ,  Yunsang Kim ,  William S. Kennedy

Inventor： Andrew D. Bailey ,  Alan M. Schoepp ,  Gregory Sexton ,  Andras Kuthi ,  Yunsang Kim ,  William S. Kennedy

IPC: B23H1/04

CPC classification number: H01L21/0209 ,  H01J37/32366 ,  H01J37/32568 ,  H01J2237/335 ,  H01L21/67069

Abstract: A device for cleaning a bevel edge of a semiconductor substrate. The device includes a lower electrode assembly that has a top surface and is adapted to support the substrate and an upper electrode assembly that has a bottom surface opposing the top surface. The lower and upper electrode assemblies generate plasma for cleaning the bevel edge of the substrate disposed between the top and bottom surfaces during operation. The device also includes a mechanism for suspending the upper electrode assembly over the lower support and adjusting the tilt angle and horizontal translation of the bottom surface relative to the top surface.

Abstract translation: 一种用于清洁半导体衬底的斜边缘的装置。 该装置包括具有顶表面并适于支撑基底的下电极组件和具有与顶表面相对的底表面的上电极组件。 下部和上部电极组件在操作期间产生用于清洁设置在顶部和底部表面之间的衬底的斜面边缘的等离子体。 该装置还包括用于将上电极组件悬挂在下支撑件上并且调节底表面相对于顶表面的倾斜角度和水平平移的机构。

公开(公告)号：US07390755B1

公开(公告)日：2008-06-24

申请号：US10137096

申请日：2002-05-01

Applicant: David L. Chen ,  Yuh-Jia Su ,  Eddie Ka Ho Chiu ,  Maria Paola Pozzoli ,  Senzi Li ,  Giuseppe Colangelo ,  Simone Alba ,  Simona Petroni

Inventor： David L. Chen ,  Yuh-Jia Su ,  Eddie Ka Ho Chiu ,  Maria Paola Pozzoli ,  Senzi Li ,  Giuseppe Colangelo ,  Simone Alba ,  Simona Petroni

IPC: H01L21/302

CPC classification number: B08B7/0035 ,  H01J2237/335 ,  H01L21/02063 ,  H01L21/02071

Abstract: The current invention provides methods for performing a cleaning process that provides greater cleaning efficiency with less damage to device structures. After etching and photoresist stripping, a first plasma clean is performed. The first plasma clean may comprise one or more steps. Following the first plasma clean, a first HO based clean is performed. The first HO based clean may be a de-ionized water rinse, a water vapor clean, or a plasma clean, where the plasma includes hydrogen and oxygen. Following the first HO based clean, a second plasma clean is performed, which may comprise one or more steps. A second HO based clean follows the second plasma clean, and may be a de-ionized water rinse, a water vapor clean, or a plasma clean, where the plasma includes hydrogen and oxygen. For plasma processes, an RF generated plasma, a microwave generated plasma, an inductively coupled plasma, or combination may be used. Embodiments of the invention are performed after an etch, such as a metal etch, via etch, contact etch, polysilicon etch, nitride etch or shallow trench isolation etch has been performed. Photoresist may be removed either prior to, during, or after cleaning processes according to embodiments of the invention, using an oxygen-containing plasma. Photoresist removal may be performed at low temperatures.

Abstract translation: 本发明提供了用于执行清洁过程的方法，其提供更高的清洁效率，同时对设备结构的损坏较小。 在蚀刻和光致抗蚀剂剥离之后，进行第一等离子体清洁。 第一等离子体清洁可以包括一个或多个步骤。 在第一次等离子体清洁之后，执行第一次基于HO的清洁。 第一个基于HO的清洁可以是去离子水冲洗，水蒸气清洁或等离子体清洁，其中等离子体包括氢和氧。 在第一个基于HO的清洁之后，执行第二等离子体清洁，其可以包括一个或多个步骤。 第二个基于HO的清洁遵循第二等离子体清洁，并且可以是去离子水冲洗，水蒸汽清洁或等离子体清洁，其中等离子体包括氢和氧。 对于等离子体处理，可以使用RF产生的等离子体，微波产生的等离子体，电感耦合等离子体或组合。 通过蚀刻，接触蚀刻，多晶硅蚀刻，氮化物蚀刻或浅沟槽隔离蚀刻等蚀刻，例如金属蚀刻，进行本发明的实施例。 可以使用含氧等离子体在根据本发明的实施方案的清洁方法之前，期间或之后除去光致抗蚀剂。 可以在低温下进行光刻胶去除。

公开(公告)号：US07270761B2

公开(公告)日：2007-09-18

申请号：US10273580

申请日：2002-10-18

Applicant: Xikun Wang ,  Hui Chen ,  Anbei Jiang ,  Hong Shih ,  Steve S. Y. Mak

Inventor： Xikun Wang ,  Hui Chen ,  Anbei Jiang ,  Hong Shih ,  Steve S. Y. Mak

IPC: H01L21/302

CPC classification number: C23F4/00 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32139 ,  Y10S438/905

Abstract: A fluorine-free integrated process for plasma etching aluminum lines in an integrated circuit structure including an overlying anti-reflection coating (ARC) and a dielectric layer underlying the aluminum, the process being preferably performed in a single plasma reactor. The ARC open uses either BCl3/Cl2 or Cl2 and possibly a hydrocarbon passivating gas, preferably C2H4. The aluminum main etch preferably includes BCl3/Cl2 etch and C2H4 diluted with He. The dilution is particularly effective for small flow rates of C2H4. An over etch into the Ti/TiN barrier layer and part way into the underlying dielectric may use a chemistry similar to the main etch. A Cl2/O2 chamber cleaning may be performed, preferably with the wafer removed from the chamber and after every wafer cycle.

Abstract translation: 一种用于等离子体蚀刻铝线的无氟集成方法，其集成电路结构包括上覆抗反射涂层（ARC）和铝下方的介电层，该方法优选在单个等离子体反应器中进行。 ARC打开使用BCl 3 / Cl 2 2或Cl 2 2和可能的烃钝化气体，优选C 2 H 2 > H 4。 铝主蚀刻优选包括用He稀释的BCl 3 / Cl 2 N 2蚀刻和C 2 H 2 H 4。 稀释度对于C 2 H 4 H 4的小流量特别有效。 对Ti / TiN阻挡层进行过度蚀刻并且部分地进入下面的电介质可以使用类似于主蚀刻的化学。 优选地，可以从晶片上取出晶片并在每个晶片周期之后进行C1 / 2 / O 2/2室清洁。

公开(公告)号：US20060040499A1

公开(公告)日：2006-02-23

申请号：US10922710

申请日：2004-08-20

Applicant: Steve Walther ,  Sandeep Mehta ,  Naushad Variam ,  Ukyo Jeong

Inventor： Steve Walther ,  Sandeep Mehta ,  Naushad Variam ,  Ukyo Jeong

IPC: H01L21/302 ,  C23F1/00 ,  C03C25/68

CPC classification number: C03C23/0055 ,  B08B7/0057 ,  B08B7/0071 ,  C03C15/00 ,  C03C23/002 ,  H01J37/321 ,  H01J37/32412 ,  H01J2237/335 ,  H01L21/02046 ,  H01L21/26513

Abstract: Methods and apparatus that introduce, within the ion implant chamber or an isolated chamber in communication therewith, the capability to remove contaminants and oxide surface layers on a wafer surface prior to ion implantation, are disclosed. The mechanisms for removal of contaminants include conducting: a low energy plasma etch, heating the wafer and application of ultraviolet illumination, either in combination or individually. As a result, implantation can occur immediately after the cleaning/preparation process without the contamination potential of exposure of the wafer to an external environment. The preparation allows for the removal of surface contaminants, such as water vapor, organic materials and surface oxides.

Abstract translation: 公开了在离子注入室或与之连通的隔离室内引入在离子注入之前去除晶片表面上的污染物和氧化物表面层的能力的方法和装置。 去除污染物的机理包括：组合或单独地进行低能量等离子体蚀刻，加热晶片和施加紫外线照明。 结果，可以在清洁/制备过程之后立即进行植入，而不会使晶片暴露于外部环境的污染潜力。 该制剂允许去除表面污染物，例如水蒸汽，有机材料和表面氧化物。

公开(公告)号：US20050161061A1

公开(公告)日：2005-07-28

申请号：US10666331

申请日：2003-09-17

Applicant: Hong Shih ,  Anthony Chen ,  Sok Tan ,  Stephen Hwang ,  John Daugherty ,  Bruno Morel

Inventor： Hong Shih ,  Anthony Chen ,  Sok Tan ,  Stephen Hwang ,  John Daugherty ,  Bruno Morel

IPC: B08B3/00 ,  B08B6/00 ,  B08B7/00 ,  B08B9/00 ,  B44C1/22 ,  C23G1/00 ,  C23G1/02 ,  H01L20060101

CPC classification number: H01J37/32431 ,  H01J2237/335

Abstract: A method of removing a set of particles from a set of structures including yttrium oxide is disclosed. The method includes exposing the set of structures to a first solution including an oxidizer for a first period. The method also includes removing the set of structures from the first solution, and exposing the set of structures to a second solution including a keytone reagent for a second period. The method further includes removing the set of structures from the second solution, and mechanically rubbing the set of structures with a third solution including a first set of acids for a third period.

Abstract translation: 公开了从包括氧化钇的一组结构中去除一组颗粒的方法。 该方法包括将该组结构暴露于包括第一期间的氧化剂的第一溶液。 该方法还包括从第一解决方案中移除该组结构，以及将该组结构暴露于包括第二期间的键控试剂的第二溶液。 所述方法还包括从所述第二溶液中去除所述一组结构，并且在第三周期内用包含第一组酸的第三溶液机械地摩擦所述一组结构。