公开(公告)号：US5760417A

公开(公告)日：1998-06-02

申请号：US410396

申请日：1995-03-27

Applicant: Nobuo Watanabe ,  Norio Kaneko ,  Masahiko Okunuki ,  Takeo Tsukamoto

Inventor： Nobuo Watanabe ,  Norio Kaneko ,  Masahiko Okunuki ,  Takeo Tsukamoto

IPC: H01J1/308 ,  H01J9/02 ,  H01L29/47 ,  H01L29/812 ,  H01L31/108 ,  H01L33/00

CPC classification number: H01J9/022 ,  H01J1/308

Abstract: In a semiconductor electron emission device for causing an avalanche breakdown by applying a reverse bias voltage to a Schottky barrier junction between a metallic material or metallic compound material and a p-type semiconductor, and externally emitting electrons from a solid-state surface, a p-type semiconductor region (first region) for causing the avalanche breakdown contacts a p-type semiconductor region (second region) for supplying carriers to the first region, and a semi-insulating region is formed around the first region.

Abstract translation: 在通过向金属材料或金属化合物材料和p型半导体之间的肖特基势垒结施加反向偏置电压并从外部从固态表面发射电子来引起雪崩击穿的半导体电子发射器件中，p 用于引起雪崩击穿的p型半导体区域（第一区域）接触用于向第一区域提供载流子的p型半导体区域（第二区域），并且在第一区域周围形成半绝缘区域。

公开(公告)号：US5414272A

公开(公告)日：1995-05-09

申请号：US224192

申请日：1994-04-07

Applicant: Nobuo Watanabe ,  Masahiko Okunuki ,  Takeo Tsukamoto

Inventor： Nobuo Watanabe ,  Masahiko Okunuki ,  Takeo Tsukamoto

IPC: H01L29/872 ,  H01J1/308 ,  H01J9/02 ,  H01L29/47 ,  H01L29/48 ,  H01L29/56 ,  H01L29/64

CPC classification number: H01J1/308 ,  H01J9/022

Abstract: A semiconductor element emission element having a Schottky junction in a surface region of a semiconductor, comprises a first region having a first carrier concentration, a second region having a second carrier concentration, and a third region having a third carrier concentration. All of the regions are located below an electrode forming the Schottky junction. The first, second, and third carrier concentrations satisfy a condition that the first carrier concentration of the first region is higher than the second carrier concentration of the second region and that the second carrier concentration of the second region is higher than the third carrier concentration of the third region. The first, second, and third regions have a structure that at least one second region having the second carrier concentration is located inside the third region of the third carrier concentration, and that at lease one first region having the first carrier concentration is located inside said second region having the second carrier concentration.

Abstract translation: 在半导体的表面区域中具有肖特基结的半导体元件发光元件包括具有第一载流子浓度的第一区域，具有第二载流子浓度的第二区域和具有第三载流子浓度的第三区域。 所有区域都位于形成肖特基结的电极之下。 第一，第二和第三载流子浓度满足第一区域的第一载流子浓度高于第二区域的第二载流子浓度，并且第二区域的第二载流子浓度高于第二区域的第三载流子浓度的条件 第三个地区。 第一，第二和第三区域具有以下结构：具有第二载流子浓度的至少一个第二区域位于第三载流子浓度的第三区域内，并且至少具有第一载流子浓度的第一区域位于所述 第二区域具有第二载流子浓度。

公开(公告)号：US5410166A

公开(公告)日：1995-04-25

申请号：US55168

申请日：1993-04-28

Applicant: Elliot B. Kennel

Inventor： Elliot B. Kennel

IPC: H01J1/308 ,  H01J45/00 ,  H01L29/161

CPC classification number: H01J45/00 ,  H01J1/308

Abstract: A cold cathode electron sourcing arrangement wherein a negative electron affinity material such as p-type diamond is disposed adjacent a p-n junction in order that electron charge carriers originating in the p-n junction may be caused to flood the p-type diamond and increase its electrical conductivity and also provide a source for high current flow free electrons repelled from the surface of the diamond material. Theoretical consideration of the high current electron source is also disclosed. Use of the electron source in cathode ray tubes and other electron based apparatus is also included. The disclosed electron sourcing is distinguished from that of previously known n-type diamond.

Abstract translation: 一种冷阴极电子源装置，其中负电子亲和性材料如p型金刚石设置在pn结附近，以便可能引起源于pn结的电子载流子使p型金刚石泛滥并增加其导电性 并且还提供从金刚石材料的表面排斥的高电流流动的电子源。 还公开了高电流电子源的理论考虑。 还包括在阴极射线管和其他基于电子的装置中使用电子源。 所公开的电子源与以前已知的n型金刚石的电子源不同。

公开(公告)号：US5359257A

公开(公告)日：1994-10-25

申请号：US621636

申请日：1990-12-03

Applicant: Kyle J. Bunch ,  William N. Cain ,  Richard W. Grow

Inventor： Kyle J. Bunch ,  William N. Cain ,  Richard W. Grow

IPC: H01J1/308 ,  H01L29/88 ,  H01L29/161

CPC classification number: H01L29/88 ,  H01J1/308

Abstract: A majority carrier, solid state cathode uses ballistic behavior to provide a highly coherent (and modulated) electron beam, with a large current density and expected efficiencies greater than fifty percent.

Abstract translation: 大多数载体固态阴极使用弹道行为来提供高度相干（和调制的）电子束，具有大的电流密度和预期效率大于百分之五十。

公开(公告)号：US5304815A

公开(公告)日：1994-04-19

申请号：US94404

申请日：1993-07-21

Applicant: Akira Suzuki ,  Takeo Tsukamoto ,  Akira Shimizu ,  Masao Sugata ,  Isamu Shimoda ,  Masahiko Okunuki

Inventor： Akira Suzuki ,  Takeo Tsukamoto ,  Akira Shimizu ,  Masao Sugata ,  Isamu Shimoda ,  Masahiko Okunuki

IPC: H01J1/308 ,  H01J1/34 ,  H01L27/14 ,  H01J29/12 ,  H01L31/00

CPC classification number: H01J1/308 ,  H01J1/34 ,  H01J2201/3423

Abstract: An electron emission element comprises a P-type semiconductor substrate and electrodes formed on both ends of the semiconductor substrate. A voltage is applied between said electrodes. The P-type semiconductor substrate is irradiated with light to emit the electrons, generated in the P-type semiconductor substrate by photoexcitation, from an electron emitting face at an end of the P-type semiconductor substrate.

Abstract translation: 电子发射元件包括P型半导体衬底和形成在半导体衬底两端的电极。 在所述电极之间施加电压。 P型半导体衬底被照射从P型半导体衬底的端部的电子发射面通过光激发发射在P型半导体衬底中产生的电子。

公开(公告)号：US5243197A

公开(公告)日：1993-09-07

申请号：US970437

申请日：1992-11-02

Applicant: Gerardus G. P. Van Gorkom ,  Aart A. Van Gorkum ,  Gerjan F. A. Van De Walle ,  Petrus A. M. Van Der Heide ,  Arthur M. E. Hoeberechts

Inventor： Gerardus G. P. Van Gorkom ,  Aart A. Van Gorkum ,  Gerjan F. A. Van De Walle ,  Petrus A. M. Van Der Heide ,  Arthur M. E. Hoeberechts

IPC: H01J1/308

CPC classification number: H01J1/308

Abstract: The efficiency of semiconductor cathodes based on avalanche breakdown is enhanced by using ".delta.-doping" structures. The quantization effects introduced thereby decrease the effective work function. A typical cathode structure has an n-type semiconductor region and a first p-type semiconductor region, with the n-type region having a thickness of at most 4 nanometers.

Abstract translation: 通过使用“Δ掺杂”结构增强了基于雪崩击穿的半导体阴极的效率。 由此引入的量化效应降低了有效的工作功能。 典型的阴极结构具有n型半导体区域和第一p型半导体区域，其中n型区域具有至多4纳米的厚度。

公开(公告)号：US5138402A

公开(公告)日：1992-08-11

申请号：US807613

申请日：1991-12-13

Applicant: Takeo Tsukamoto ,  Toshihiko Takeda ,  Haruhito Ono ,  Nobuo Watanabe ,  Masahiko Okunuki

Inventor： Takeo Tsukamoto ,  Toshihiko Takeda ,  Haruhito Ono ,  Nobuo Watanabe ,  Masahiko Okunuki

IPC: H01J9/02 ,  H01J1/308

CPC classification number: H01J1/308

Abstract: A semiconductor electron emitting device comprising a Schottky electrode and a p type semiconductor. The Schottky electrode is disposed on the p type semiconductor and defines a junction formed therebetween. The p type semiconductor has an impurity concentration within a predetermined range adapted for causing an avalanche breakdown responsive to a reverse biasing voltage applied between said p type semiconductor and said Schottky electrode. Electrons are emitted from the Schottky electrode in response to the application of the reverse bias voltage.

Abstract translation: 一种包括肖特基电极和p型半导体的半导体电子发射器件。 肖特基电极设置在p型半导体上并且限定其间形成的结。 p型半导体具有适于根据施加在所述p型半导体和所述肖特基电极之间的反向偏置电压引起雪崩击穿的预定范围内的杂质浓度。 响应于反向偏置电压的应用，电子从肖特基电极发射。

公开(公告)号：US5138191A

公开(公告)日：1992-08-11

申请号：US546753

申请日：1990-07-02

Applicant: Yoshihiko Mizushima ,  Toru Hirohata ,  Tsuneo Ihara ,  Minoru Niigaki ,  Kenichi Sugimoto ,  Koichiro Oba ,  Toshihiro Suzuki ,  Tomoko Suzuki

Inventor： Yoshihiko Mizushima ,  Toru Hirohata ,  Tsuneo Ihara ,  Minoru Niigaki ,  Kenichi Sugimoto ,  Koichiro Oba ,  Toshihiro Suzuki ,  Tomoko Suzuki

IPC: G01J1/02 ,  H01J1/30 ,  H01J1/308 ,  H01J1/34 ,  H01J29/38 ,  H01J29/45 ,  H04N5/33

CPC classification number: H01J1/308 ,  H01J1/34 ,  H01J2201/3423

Abstract: A junction, such as a Schottky junction, is formed between a conductive electrode and a semiconductor. A bias voltage is applied between the conductive electrode and an outward-emission-side electrode formed on the semiconductor at the side opposite to the junction. Upon illumination, photoelectrons are internally emitted in the conductive electrode into the semiconductor, transported through the semiconductor, and emitted outward from the semiconductor surface, which has been so treated as to reduce the surface barrier height. The semiconductor is semi-insulating, or a p-n junction is formed therein.

Abstract translation: 在导电电极和半导体之间形成诸如肖特基结的结。 在导电电极与形成在半导体的与该结的相反侧的外侧发射侧电极之间施加偏置电压。 在照射时，光电子在导电电极内部发射到半导体中，通过半导体传输，并从半导体表面向外发射，半导体表面已被如此处理以减小表面势垒高度。 半导体是半绝缘的，或者在其中形成p-n结。

公开(公告)号：US4999537A

公开(公告)日：1991-03-12

申请号：US374781

申请日：1989-07-03

Applicant: Claude Weisbuch ,  Bernard Epsztein

Inventor： Claude Weisbuch ,  Bernard Epsztein

IPC: H01J1/308 ,  H01J1/312 ,  H01J23/04

CPC classification number: B82Y10/00 ,  H01J1/308 ,  H01J1/312 ,  H01J23/04

Abstract: The electron source disclosed comprises a solid having a first semiconductor layer capable of releasing electrons under the effect of an electrical field, means to make at least one of its faces partially transparent to at least one part of the released electrons, and to enable this part of the electrons to be ejected from the solid, and a second unstable composite semiconductor layer having a structure having a negative differential resistance located between the first layer and its face which is at least partially transparent, in contact with the first layer. The electron source further includes means to form, with said first layer and the composite layer, an electrical resonant cavity.

Abstract translation: 所公开的电子源包括具有能够在电场作用下释放电子的第一半导体层的固体，使得其至少一个面部至少部分地透射到释放的电子的至少一部分，并且使得该部分 以及第二不稳定复合半导体层，其具有位于第一层和其表面之间的至少部分透明的与第一层接触的具有负的差分电阻的结构。 电子源还包括与所述第一层和复合层一起形成电谐振腔的装置。

公开(公告)号：US4853754A

公开(公告)日：1989-08-01

申请号：US021938

申请日：1987-03-05

Applicant: Gerardus G. P. Van Gorkom ,  Henri F. J. Van 'T Blik

Inventor： Gerardus G. P. Van Gorkom ,  Henri F. J. Van 'T Blik

IPC: H01J1/30 ,  H01J1/308 ,  H01J29/04 ,  H01J31/38

CPC classification number: H01J1/308

Abstract: A semiconductor cathode is realized with the aid of a pin structure in which the intrinsic semiconductor region includes a first region with a small band distance and a second region with a large band distance. Consequently, at a sufficient reverse voltage, electrons (6) are generated in the first region (6) which electrons tunnel from the valence band to the conduction band and have a sufficient potential energy to be emitted from the semiconductor body.