Abstract:
A non-volatile memory includes word lines providing access to memory cells, a word-line decoder applying an activation signal corresponding to an input address to a word line, a converter reproducing the activation signal on outputs by lowering its voltage level, and an encoding circuit that includes transistors with a switching threshold that is lower than the voltage level of the outputs and coupled so as to generate an output address specific to an activated word line if this word line is the only one activated, such that a test circuit generates an error signal if the input address differs from the output address. In such a configuration, the area of silicon occupied by a test circuit can be reduced.
Abstract:
An electronic circuit includes configurable cells capable of being functionally linked to logic cells with which they cooperate to form at least one logic circuit if a chaining command signal is in a first (inactive) state. The electronic circuit also includes a logic interconnection circuit for performing the following functions if the chaining command signal is in a second (active) state. Functionally connecting the configurable cells in a linear feedback shift register if an authentication signal is in a first state, or functionally connecting the configurable cells in a chain in a predefined order to form a shift register if the authentication signal is in a second state.
Abstract:
An integrated circuit includes a resistive circuit with reduced mismatch that includes a primary resistive network with several main resistances (Rp) each having the same theoretical main value. It also includes an auxiliary resistance (Rau) having an auxiliary theoretical resistive value equal to the product or to the quotient of the theoretical main resistive value by √{square root over (2)}. All these resistances are connected together so as to attribute a theoretical overall resistive value to the primary resistive network equal to the theoretical auxiliary resistive value.
Abstract:
A method for manufacturing an electronic tag to be affixed onto a product includes providing, in an electrically conductive film of a foil for packaging, packing or transporting the product, areas devoid of any electrically conductive material for delimiting in the electrically conductive film at least one antenna pattern for forming an antenna for an RFID tag. A semiconductor chip is connected to the antenna for forming an electronic tag.
Abstract:
A device for sending/receiving digital data is capable of processing different bit rates from a group of predetermined bit rates. The device may include a channel coding/decoding stage including an interleaver, a deinterleaver, and a memory whose minimum size is fixed as a function of the maximum bit rate of the group of predetermined bit rates. The memory may have a first memory space assigned to the interleaver and a second memory space assigned to the deinterleaver. The size of each of the two memory spaces may be set as a function of the bit rate actually processed by the device.
Abstract:
An electronic device where the ratio between two amplification factors of two amplifiers, called main amplifiers, is adjusted using a control means. The control means constantly equalizes the output signals of the two main amplifiers by adapting one of the control signals. The output signals are acted on in order to adjust the control signals. Owing to the fact that the input signals are in a ratio N, this same ratio is obtained between the amplification factors of the two main amplifiers. The two main control signals, used to control the main amplifiers, are employed for controlling any other amplification factor of at least two other amplifiers or groups of amplifiers, so as to establish a ratio N between these other amplification factors. The main circuit thus allows N to be applied and regulated between the amplification factors of other amplifiers.
Abstract:
Semiconductor device (1) and process for fabricating it, the device (1) including an electrical connection support plate (2), an integrated circuit chip placed at a certain location on the support plate (2) and placed at a certain distance from this support plate (2), a plurality of electrical connection balls connecting electrical connection regions (4) of the support plate (2) and corresponding electrical connection pads on the integrated circuit chip, and a fill material at least partly filling the space separating the chip from the plate, and in which the surface of the support plate (2), which has the electrical connection regions (4), is provided with an interlayer (6) made of an insulating material in which apertures (7) are provided above the electrical connection regions (4) and above complementary flow channels (9, 10).
Abstract:
A synchronization variable intended for a second clock signal is generated from a first clock signal and a phase variation signal. A first approximation of the second clock signal is determined, and other approximations close to the first approximation are also determined. An error is calculated for each of the approximations, and the best approximation is taken as the second clock signal.
Abstract:
The invention concerns a demodulator of an amplitude-modulated signal (Vdb), characterised in that it comprises a peak detecting cell (DCR) capable of extracting the reference modulating signal (Vpeak1) of the modulated signal (Vdb); a first demodulator (FE) adapted to detect the peak of the reference modulating signal (Vpeak1) to generate a high comparison threshold and locate the start of the modulation, a second demodulator (RE) adapted to detect a trough of the reference modulating signal (Vpeak1) to generate a low comparison threshold and locate the end of the modulation; a logic processing unit capable of supplying the demodulated signal (Vdemod).
Abstract:
A system implemented for example in the form of an SoC comprises a first demodulator for generating a first data stream to be decoded, and a second demodulator for generating a second data stream to be decoded, and a block decoder. The block decoder comprises an input memory for storing blocks of data from the first data stream and blocks of data from the second data stream, and a block decoding unit for processing, from the input memory, the blocks of data from the first and second data streams.