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    REFRIGERATOR AND CONTROL METHOD THEREOF
    52.
    发明申请
    REFRIGERATOR AND CONTROL METHOD THEREOF 有权
    制冷机及其控制方法

    公开(公告)号：US20110175742A1

    公开(公告)日：2011-07-21

    申请号：US12820947

    申请日：2010-06-22

    Applicant: Jong Min SHIN ,  Ji Young LEE ,  Woo Hyun PAIK

    Inventor： Jong Min SHIN ,  Ji Young LEE ,  Woo Hyun PAIK

    IPC: G08B21/00 ,  F25D11/00 ,  F25D17/04 ,  G06F1/32 ,  G05D23/19 ,  G05D7/06

    CPC classification number: F25D17/065 ,  F25D29/00 ,  H02J2003/143 ,  H02J2003/146 ,  Y02B70/3266 ,  Y04S20/224 ,  Y04S20/242

    Abstract: A refrigerator and a control method of the refrigerator are discussed. According to an embodiment, a control method of a refrigerator connected to an electric power management network comprises steps of receiving power-rate information via the electric power management network; setting an over-cooling period and a power-saving period based on the received power-rate information; controlling at east one storage chamber to be over-cooled by over-cooling cold air during the over-cooling period; and controlling the other storage chamber to be over-cooled by the over-cooled cold air during the power-saving period. According to the present invention, the functions of the refrigerator are provided with minimal use of electricity and/or with reduced electricity charges.

    Abstract translation: 讨论了冰箱和冰箱的控制方法。 根据实施例，连接到电力管理网络的冰箱的控制方法包括经由电力管理网络接收功率信息的步骤; 基于所接收的功率信息设定过冷时段和省电周期; 在过冷却期间，通过过冷冷空气对东一储存室进行控制过冷; 并且在节能期间通过过冷却的冷空气来控制另一个储存室被过冷却。 根据本发明，冰箱的功能最少使用电力和/或减少的电费。

    Methods of Fabricating Field Effect Transistors Having Protruded Active Regions
    54.
    发明申请
    Methods of Fabricating Field Effect Transistors Having Protruded Active Regions 有权
    制造具有突出活动区域的场效应晶体管的方法

    公开(公告)号：US20110095345A1

    公开(公告)日：2011-04-28

    申请号：US12977811

    申请日：2010-12-23

    Applicant: Ji-Young Lee ,  Jun Seo

    Inventor： Ji-Young Lee ,  Jun Seo

    IPC: H01L29/78

    CPC classification number: H01L29/1037 ,  H01L21/76229 ,  H01L27/105 ,  H01L29/66621 ,  H01L29/7834

    Abstract: Provided are a field effect transistor, a method of manufacturing the same, and an electronic device including the field effect transistor. The field effect transistor may have a structure in which a double gate field effect transistor and a recess channel array transistor are formed in a single transistor in order to improve a short channel effect which occurs as field effect transistors become more highly integrated, a method of manufacturing the same, and an electronic device including the field effect transistor. The field effect transistor can exhibit stable device characteristics even when more highly integrated in such a manner that both the length and width of a channel increase and particularly the channel can be significantly long, and can be manufactured simply.

    Abstract translation: 提供了场效应晶体管，其制造方法以及包括场效应晶体管的电子器件。 场效应晶体管可以具有在单个晶体管中形成双栅极场效应晶体管和凹槽沟道阵列晶体管的结构，以便改善随着场效应晶体管变得更高度集成而发生的短沟道效应， 制造它们，以及包括场效应晶体管的电子器件。 即使当以通道的长度和宽度都增加并且特别是通道可以显着长的方式更高度集成时，场效应晶体管也可以表现出稳定的器件特性，并且可以简单地制造。

    Method for forming patterns of semiconductor device
    55.
    发明授权
    Method for forming patterns of semiconductor device 失效
    半导体器件形成方法

    公开(公告)号：US07862988B2

    公开(公告)日：2011-01-04

    申请号：US11529310

    申请日：2006-09-29

    Applicant: Cha-Won Koh ,  Yool Kang ,  Sang-Gyun Woo ,  Seok-Hwan Oh ,  Gi-Sung Yeo ,  Ji-Young Lee

    Inventor： Cha-Won Koh ,  Yool Kang ,  Sang-Gyun Woo ,  Seok-Hwan Oh ,  Gi-Sung Yeo ,  Ji-Young Lee

    IPC: G03F7/26

    CPC classification number: G03F7/40 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/0338

    Abstract: Provided is a method for forming patterns of a semiconductor device. According to the method, first mask patterns may be formed on a substrate, and second mask patterns may be formed on sidewalls of each first mask pattern. Third mask patterns may fill spaces formed between adjacent second mask patterns, and the second mask patterns may be removed. A portion of the substrate may then be removed using the first and third mask patterns as etch masks.

    Abstract translation: 提供了一种用于形成半导体器件的图案的方法。 根据该方法，可以在衬底上形成第一掩模图案，并且可以在每个第一掩模图案的侧壁上形成第二掩模图案。 第三掩模图案可以填充在相邻的第二掩模图案之间形成的空间，并且可以去除第二掩模图案。 然后可以使用第一和第三掩模图案作为蚀刻掩模去除衬底的一部分。

    Semiconductor devices having Fin-type active areas and methods of manufacturing the same
    56.
    发明授权
    Semiconductor devices having Fin-type active areas and methods of manufacturing the same 有权
    具有Fin型有源区的半导体器件及其制造方法

    公开(公告)号：US07795099B2

    公开(公告)日：2010-09-14

    申请号：US11979748

    申请日：2007-11-08

    Applicant: Hyun-jae Kang ,  Ji-young Lee ,  Han-ku Cho ,  Gi-sung Yeo

    Inventor： Hyun-jae Kang ,  Ji-young Lee ,  Han-ku Cho ,  Gi-sung Yeo

    IPC: H01L21/762

    CPC classification number: H01L29/7851 ,  H01L29/66795

    Abstract: A semiconductor device having a fin type active area includes a plurality of active regions, a first device isolation layer and a recessed second device isolation layer disposed in a direction of gate electrodes of the semiconductor device. A recessed second device isolation layer and a first device isolation layer are disposed in a vertical direction of the gate electrodes. The first device isolation layer and the plurality of active regions are alternately disposed in a first direction of the plurality of active regions.

    Abstract translation: 具有翅片型有源区的半导体器件包括沿着半导体器件的栅电极的方向设置的多个有源区，第一器件隔离层和凹陷的第二器件隔离层。 凹陷的第二器件隔离层和第一器件隔离层设置在栅电极的垂直方向上。 第一器件隔离层和多个有源区交替地设置在多个有源区的第一方向上。

    Electrophotographic photoreceptor containing asymmetric naphthalenetetracarboxylic acid diimide derivatives and electrophotographic imaging apparatus employing the same
    60.
    发明授权
    Electrophotographic photoreceptor containing asymmetric naphthalenetetracarboxylic acid diimide derivatives and electrophotographic imaging apparatus employing the same 失效
    含有不对称萘四甲酸二酰亚胺衍生物的电子照相感光体和使用其的电子照相成像装置

    公开(公告)号：US07494754B2

    公开(公告)日：2009-02-24

    申请号：US11354145

    申请日：2006-02-15

    Applicant: Beom-jun Kim ,  Seung-ju Kim ,  Saburo Yokota ,  Kyung-yol Yon ,  Moto Makino ,  Ji-Young Lee ,  Hwan-koo Lee

    Inventor： Beom-jun Kim ,  Seung-ju Kim ,  Saburo Yokota ,  Kyung-yol Yon ,  Moto Makino ,  Ji-Young Lee ,  Hwan-koo Lee

    IPC: G03G5/047

    CPC classification number: G03G5/0651 ,  C07D471/06

    Abstract: An electrophotographic photoreceptor and an electrophotographic imaging apparatus include an asymmetric naphthalenetetracarboxylic acid diimide derivative. The asymmetric naphthalenetetracarboxylic acid diimide derivative has increased solubility in organic solvents and improved compatibility with binder resins, thus providing excellent electron transporting ability. The electrophotographic photoreceptor containing the asymmetric naphthalenetetracarboxylic acid diimide compound according to the present invention can maintain a constant surface potential after being repeatedly used for an extended time. The electrophotographic photoreceptor according to the present invention can provide a high image quality for an extended time.

    Abstract translation: 电子照相感光体和电照相成像装置包括不对称萘四甲酸二酰亚胺衍生物。 不对称萘四甲酸二酰亚胺衍生物在有机溶剂中的溶解度增加，与粘合剂树脂的相容性提高，提供优异的电子传输能力。 含有根据本发明的不对称萘四羧酸二酰亚胺化合物的电子照相感光体可在长时间重复使用之后保持恒定的表面电位。 根据本发明的电子照相感光体可以延长时间提供高图像质量。

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