Abstract:
A ceramic printed circuit board (PCB) and an inkjet printhead assembly using the ceramic PCB. A ceramic PCB in which a plurality of layers are stacked includes a plurality of terminals to receive an electric signal from an external source, a plurality of circuit patterns connected to the plurality of terminals to transmit the electric signal, and a termination resistor having a predetermined thickness disposed between the plurality of circuit patterns, wherein the termination resistor is mounted between the plurality of stacked layers.
Abstract:
An image forming apparatus, including: a main body; an image carrying body disposed in the main body, a transfer unit and an electrical charge removal unit. The image forming apparatus forms a visible image on the image carrying body by carrying out charging, exposing and developing processes. The transfer unit transfers the visible image from the image carrying body to a printing medium. The electrical charge removal unit is configured to remove residual electrical charge from the printing medium, and is movable, in cooperation with at least one replaceable component part of the transfer unit, between an operable position at which the electrical charge removal unit is capable of removing the electrical charge from the printing medium and a non-interfering position at which the electrical charge removal unit does not interfere with the movement of the at least one replaceable component part of the transfer unit being received into or being removed from the main body for replacement.
Abstract:
A semiconductor integrated circuit apparatus includes a semiconductor substrate, a plurality of signal lines, and at least one interface member. The signal lines are disposed on the semiconductor substrate. The interface member is disposed in the semiconductor substrate between the adjacent signal lines among the signal lines to pierce the semiconductor substrate.
Abstract:
Provided are a method for fabricating a capacitor and a semiconductor device using the same. The semiconductor device includes a MOS transistor capacitor, first and second plate capacitors, and a metal interconnection. The MOS transistor capacitor is arranged between a power supply and a ground. The first and second plate capacitors are arranged between the power supply and the ground. The metal interconnection is configured to connect the first and second plate capacitors.
Abstract:
A semiconductor device includes a MOS capacitor including a gate, a source, and a drain, a cylinder capacitor including a top electrode, a dielectric layer, and a bottom electrode, and a metal interconnection that connects the gate to the bottom electrode.
Abstract:
A conductive paste including a conductive powder, a metallic glass, and an organic vehicle, wherein the metallic glass has a resistivity that is decreased when the metallic glass is heat treated at a temperature that is higher than a glass transition temperature of the metallic glass.
Abstract:
According to an example embodiment a method of plating resin using a graphene thin layer includes forming a graphene thin layer on a resin substrate and electroplating the resin substrate having the graphene thin layer fog on the resin substrate.
Abstract:
Provided are a non-volatile memory device and a method of operating the non-volatile memory device. The non-volatile memory device includes a switching device and a storage node connected to the switching device, wherein the storage node comprises: a first electrode connected to the switching device; a chalcogenide material layer formed on the first electrode; and a second electrode formed on the chalcogenide material layer, and one of the first and second electrodes comprises an electrode contact layer formed adjacent to a limited region of the chalcogenide material layer, and a property of the electrode region adjacent to the chalcogenide material layer is changed reversibly according to the direction in which a current is applied, thereby changing between a high resistance state and a low resistance state.
Abstract:
An output circuit of a semiconductor apparatus having two different types of decoupling capacitors is presented. The output circuit includes a first pad, a second pad, a main output unit and a decoupling capacitor region. The first and second pads are configured to respectively provide a power supply voltage and a ground voltage. The main output unit is coupled to the first and second pads. One end of the decoupling capacitor region is coupled to the first pad and the other end is coupled to the second pad. The decoupling capacitor region includes a first decoupling capacitor region spaced apart from a portion of the main output unit by a first distance, and a second decoupling capacitor region spaced apart from the main output unit by a second distance which is greater than the first distance.
Abstract:
Disclosed is an image forming apparatus, including: a main body; an image carrying body disposed in the main body, a transfer unit and an electrical charge removal unit. The image forming apparatus forms a visible image on the image carrying body by carrying out charging, exposing and developing processes. The transfer unit transfers the visible image from the image carrying body to a printing medium. The electrical charge removal unit is configured to remove the residual electrical charge from the printing medium, and is movable, in cooperation with at least one replaceable component part of the transfer unit, between an operable position at which the electrical charge removal unit is capable of removing the electrical charge from the printing medium and a non-interfering position at which the electrical charge removal unit does not interfere with the movement of the at least one replaceable component part of the transfer unit being received into or being removed from the main body for replacement.