Abstract:
The present invention relates to a manufacturing method of an electronic paper display device and an electronic paper display device manufactured therefrom.The manufacturing method of the electronic paper display device may include forming a first auxiliary first dielectric layer on a first substrate; disposing electronic balls on the first auxiliary first dielectric layer; forming a second auxiliary first dielectric layer that fixes the electronic balls by curing the first auxiliary first dielectric layer; forming an auxiliary second dielectric layer on the second auxiliary first dielectric layer including the electronic balls; forming first and second dielectric layers by curing the second auxiliary first dielectric layer and the auxiliary second dielectric layer; and bonding the first substrate including the second dielectric layer to a second substrate.
Abstract:
An electronic paper display device and a method of manufacturing the electronic paper display device are disclosed. The method can include forming a plurality of relievo patterns on a lower board, in which the relievo patterns are formed to be independent and separated from one another, disposing a display unit in between the plurality of relievo patterns, and attaching an upper board on the plurality of relievo patterns such that the display unit is covered. In accordance with an embodiment of the present invention, the method can improve the freedom of disposing the display units by allowing partition walls to form only at areas to fix the display units.
Abstract:
Provided are a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same. The CMOS device comprises an epi-layer that may be formed on a substrate; a first semiconductor layer and a second semiconductor layer that may be formed on different regions of the epi-layer, respectively; and a PMOS transistor and a NMOS transistor that may be formed on the first and second semiconductor layers, respectively.
Abstract:
A process for fabricating a field emitter electrode includes: impregnating a cathode and anode in an electrolyte containing carbon nanotubes dispersed therein and applying a predetermined voltage to the cathode and anode so as to deposit carbon nanotubes on a substrate provided on the anode; recovering the substrate and applying a conductive polymer onto the surface of the substrate having carbon nanotubes deposited thereon; and heat treating the conductive polymer having carbon nanotubes deposited thereon, so as to completely cure it.
Abstract:
Provided are an integrated circuit (IC) package having balls designed to minimize contact resistance, a test apparatus for testing the IC package, and a method of manufacturing the IC package. The IC package is a ball grid array (BGA) package including solder balls, the solder balls having substantially flat bottoms. The balls of the BGA package are Pb-free balls, and are polished using a mechanical polishing method or a chemical polishing method to have the substantially flat bottoms. The test apparatus includes a plurality of channels, a test board having a wiring pattern connected to the channels, and an IC socket having a plurality of Pogo pins respectively connected to lands of the wiring pattern. The top ends of the Pogo pins of the IC socket are made substantially flat to increase the area that contacts the substantially flat bottom surfaces of the BGA package.
Abstract:
Provided is a vertical external cavity surface emitting laser (VECSEL) in which a pump laser is integrated with the rest of the VECSEL as a single body. The VECSEL includes: a first active layer that has a quantum well structure and generates light with a first wavelength; a reflection layer formed on a first surface of the first active layer; an external mirror that is separated by a predetermined distance from a second surface of the first active layer, transmits a portion of light generated by the first active layer to the outside, and reflects the rest of the light generated by the first active layer to be absorbed by the first active layer; and a pump laser disposed on the reflection layer as a single body to provide light with a second wavelength which is shorter than the first wavelength to the first active layer for optical pumping.
Abstract:
A monolithic integrated semiconductor optical element is disclosed. The semiconductor optical element including a substrate, a first waveguide, formed on the substrate, including a first active layer for generating light, and a semi-insulating, grown on the substrate so as to surround a perimeter of the first waveguide layer, including a window area for diffusing the light outputted from the first waveguide and outputting the diffused light. The semiconductor optical elements also includes at least one second waveguide, formed in the window area close to the first waveguide, including a second active layer for detecting a part of the light diffused by the window area.
Abstract:
A semiconductor substrate having a reference semiconductor chip and a method of assembling semiconductor chips using the same are provided. According to the method, a semiconductor substrate having a plurality of semiconductor chips is provided. An identification mark is made on a reference semiconductor chip among the semiconductor chips. The semiconductor substrate is aligned with reference to the reference semiconductor chip, so that an electrical die sorting test can be performed on the semiconductor chips on the semiconductor substrate.
Abstract:
An integrated optical device having at least two optical devices integrated therein and a method of fabricating the integrated optical device are provided. To fabricate an integrated optical device having optically connected and electrically isolated first and second optical devices on a substrate of a first conductive type, an active layer and a clad layer of a second conductive type are first formed in a mesa structure on the substrate, an SI clad layer is then formed on the substrate surrounding the clad layer of the second conductive type and the active layer, and finally first and second conductive layers are formed into trenches by diffusing a dopant of the second conductive type into the SI clad layer in areas corresponding to the first and second optical devices.
Abstract:
A monolithic integrated semiconductor optical element is disclosed. The semiconductor optical element including a substrate, a first waveguide, formed on the substrate, including a first active layer for generating light, and a semi-insulating, grown on the substrate so as to surround a perimeter of the first waveguide layer, including a window area for diffusing the light outputted from the first waveguide and outputting the diffused light. The semiconductor optical elements also includes at least one second waveguide, formed in the window area close to the first waveguide, including a second active layer for detecting a part of the light diffused by the window area.