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公开(公告)号:US08435473B2
公开(公告)日:2013-05-07
申请号:US12865940
申请日:2009-02-17
IPC分类号: C01F17/00 , C01B25/10 , C01B15/16 , C01B25/26 , C01B21/20 , C01B13/00 , C01C1/00 , C01D1/02 , C01G49/00 , C01G53/04 , C01G29/00 , C01G30/00 , C01G28/02 , C01G28/00
CPC分类号: C01G53/006 , C01G49/009 , C01G55/002 , C01P2002/52 , C01P2002/72 , C01P2002/76 , C01P2002/78 , C01P2002/88 , C01P2006/40 , C01P2006/42 , C04B35/447 , C04B2235/3208 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3279 , C04B2235/40 , C04B2235/405 , C04B2235/42 , C04B2235/445 , H01L39/125
摘要: Disclosed is a superconducting compound which has a structure obtained by partially substituting oxygen ions of a compound, which is represented by the following chemical formula; LnTMOPh [wherein Ln represents at least one element selected from Y and rare earth metal elements (La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu), TM represents at least one element selected from transition metal elements (Fe, Ru, Os, Ni, Pd and Pt), and Pn represents at least one element selected from pnictide elements (N, P, As and Sb)] and has a ZrCuSiAs-type crystal structure (space group P4/nmm), with at least one kind of monovalent anion (F−, Cl− or Br−). The superconducting compound alternatively has a structure obtained by partially substituting Ln ions of the compound with at least one kind of tetravalent metal ion (Ti4+, Zr4+, Hf4+, C4+, Si4+, Ge4+, Sn4+ or Pb4+) or a structure obtained by partially substituting Ln ions of the compound with at least one kind of divalent metal ion (Mg2+, Ca2+, Sr2+ or Ba2+). The Tc of the superconducting compound is controlled in accordance with the ion substitution amount.
摘要翻译: 公开了一种超导化合物,其具有通过部分取代由以下化学式表示的化合物的氧离子而获得的结构; LnTMOPh [其中Ln表示选自Y和稀土金属元素(La,Ce,Pr,Nd,Sm,Eu,Gd,Tb,Dy,Ho,Er,Tm,Yb和Lu)中的至少一种元素,TM表示 选自过渡金属元素(Fe,Ru,Os,Ni,Pd和Pt)中的至少一种元素,Pn表示选自铌元素(N,P,As和Sb)中的至少一种元素],并且具有ZrCuSiAs型晶体 结构(空间群P4 / nmm),具有至少一种一价阴离子(F-,Cl-或Br-)。 超导化合物或者具有通过用至少一种四价金属离子(Ti 4+,Zr 4+,Hf 4+,C 4+,Si 4+,Ge 4+,Sn 4+或Pb 4+)部分取代化合物的Ln离子或通过部分取代Ln而获得的结构 化合物与至少一种二价金属离子(Mg2 +,Ca2 +,Sr2 +或Ba2 +)的离子。 超导化合物的Tc根据离子取代量进行控制。
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公开(公告)号:US08288321B2
公开(公告)日:2012-10-16
申请号:US13003149
申请日:2009-07-09
申请人: Hideo Hosono , Hiroshi Yanagi , Toshio Kamiya , Satoru Matsuishi , Sungwng Kim , Seok Gyu Yoon , Hidenori Hiramatsu , Masahiro Hirano , Takatoshi Nomura , Yoichi Kamihara
发明人: Hideo Hosono , Hiroshi Yanagi , Toshio Kamiya , Satoru Matsuishi , Sungwng Kim , Seok Gyu Yoon , Hidenori Hiramatsu , Masahiro Hirano , Takatoshi Nomura , Yoichi Kamihara
IPC分类号: C04B35/45
CPC分类号: C01G49/009 , C01G53/006 , C01G55/002 , C01P2002/34 , C01P2002/52 , C01P2002/72 , C01P2002/76 , C01P2002/77 , C01P2002/78 , C01P2004/61 , C01P2004/80 , C01P2006/40 , C01P2006/42 , C04B35/515 , C04B35/5154 , C04B35/553 , C04B2235/3208 , C04B2235/3213 , C04B2235/40 , C04B2235/401 , C04B2235/405 , C04B2235/445 , C04B2235/446 , C04B2235/5436 , C04B2235/6581 , C04B2235/76 , H01L39/125
摘要: Provides a new non-oxide system compound material superconductor as an alternative of the perovskite type copper oxides superconductor.Layered compounds which are represented by chemical formula AF(TM)Pn (wherein, A is at least one selected from a group consisting of the second family elements in the long form periodic table, F is a fluorine ion, TM is at least one selected from a group of transition metal elements consisting of Fe, Ru, Os, Ni, Pd, and Pt, and Pn is at least one selected from a group consisting of the fifteenth family elements in the long form periodic table), having a crystal structure of ZrCuSiAs type (space group P4/nmm) and which become superconductors by doping trivalent cations or divalent anions.
摘要翻译: 提供新的非氧化物系复合材料超导体作为钙钛矿型铜氧化物超导体的替代品。 由化学式AF(TM)Pn表示的分层化合物(其中,A是选自长型周期表中的第二族元素的F中的至少一种,F是氟离子,TM是至少一种选择的 由一组由Fe,Ru,Os,Ni,Pd和Pt组成的过渡金属元素,Pn是选自由长型周期表中的第十五族系元素组成的组中的至少一种),具有晶体结构 的ZrCuSiAs型(空间群P4 / nmm),通过掺杂三价阳离子或二价阴离子成为超导体。
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公开(公告)号:US07829444B2
公开(公告)日:2010-11-09
申请号:US11269641
申请日:2005-11-09
申请人: Hisato Yabuta , Masafumi Sano , Tatsuya Iwasaki , Hideo Hosono , Toshio Kamiya , Kenji Nomura
发明人: Hisato Yabuta , Masafumi Sano , Tatsuya Iwasaki , Hideo Hosono , Toshio Kamiya , Kenji Nomura
IPC分类号: H01L21/20
CPC分类号: H01L29/78618 , H01L29/66969 , H01L29/78693
摘要: Provided is a novel method for manufacturing a field effect transistor. Prior to forming an amorphous oxide layer on a substrate, ultraviolet rays are irradiated onto the substrate surface in an ozone atmosphere, plasma is irradiated onto the substrate surface, or the substrate surface is cleaned by a chemical solution containing hydrogen peroxide.
摘要翻译: 提供一种用于制造场效应晶体管的新颖方法。 在基板上形成无定形氧化物层之前,在臭氧气氛中将紫外线照射到基板表面上,将等离子体照射到基板表面上,或者通过含有过氧化氢的化学溶液清洁基板表面。
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公开(公告)号:US20100267198A1
公开(公告)日:2010-10-21
申请号:US12824568
申请日:2010-06-28
申请人: HISATO YABUTA , MASAFUMI SANO , TATSUYA IWASAKI , HIDEO HOSONO , Toshio Kamiya , KENJI NOMURA
发明人: HISATO YABUTA , MASAFUMI SANO , TATSUYA IWASAKI , HIDEO HOSONO , Toshio Kamiya , KENJI NOMURA
IPC分类号: H01L21/36
CPC分类号: H01L29/78618 , H01L29/66969 , H01L29/78693
摘要: Provided is a novel method for manufacturing a field effect transistor. Prior to forming an amorphous oxide layer on a substrate, ultraviolet rays are irradiated onto the substrate surface in an ozone atmosphere, plasma is irradiated onto the substrate surface, or the substrate surface is cleaned by a chemical solution containing hydrogen peroxide.
摘要翻译: 提供一种用于制造场效应晶体管的新颖方法。 在基板上形成无定形氧化物层之前,在臭氧气氛中将紫外线照射到基板表面上,将等离子体照射到基板表面上,或者通过含有过氧化氢的化学溶液清洁基板表面。
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公开(公告)号:US20060113549A1
公开(公告)日:2006-06-01
申请号:US11269768
申请日:2005-11-09
申请人: Tohru Den , Tatsuya Iwasaki , Hideo Hosono , Toshio Kamiya , Kenji Nomura
发明人: Tohru Den , Tatsuya Iwasaki , Hideo Hosono , Toshio Kamiya , Kenji Nomura
CPC分类号: H01L27/1225 , G03G5/08 , G03G5/144 , H01L27/1214 , H01L27/3248 , H01L27/3262 , H01L29/04 , H01L29/66969 , H01L29/78693 , H01L2251/5315
摘要: An object of the present invention is to provide a new light-emitting device with the use of an amorphous oxide. The light-emitting device has a light-emitting layer existing between first and second electrodes and a field effect transistor, of which the active layer is an amorphous.
摘要翻译: 本发明的目的是提供一种使用无定形氧化物的新的发光装置。 发光器件具有存在于第一和第二电极之间的发光层和场效应晶体管,其中有源层是无定形的。
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公开(公告)号:US20060113539A1
公开(公告)日:2006-06-01
申请号:US11269647
申请日:2005-11-09
申请人: Masafumi Sano , Katsumi Nakagawa , Hideo Hosono , Toshio Kamiya , Kenji Nomura
发明人: Masafumi Sano , Katsumi Nakagawa , Hideo Hosono , Toshio Kamiya , Kenji Nomura
IPC分类号: H01L29/04 , H01L27/12 , H01L31/0376
CPC分类号: H01L29/51 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L29/7869
摘要: A novel field-effect transistor is provided which employs an amorphous oxide. In an embodiment of the present invention, the transistor comprises an amorphous oxide layer containing electron carrier at a concentration less than 1×10−18/cm3, and the gate-insulating layer is comprised of a first layer being in contact with the amorphous oxide and a second layer different from the first layer.
摘要翻译: 提供了一种采用无定形氧化物的新型场效应晶体管。 在本发明的一个实施例中,晶体管包括含有浓度小于1×10 -6 / cm 3的电子载流子的无定形氧化物层,栅极绝缘层 包括与非晶氧化物接触的第一层和不同于第一层的第二层。
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