公开(公告)号：US06355516B1

公开(公告)日：2002-03-12

申请号：US09606411

申请日：2000-06-29

申请人： You Sung Kim ,  Kyong Min Kim ,  Chang Seo Park ,  Han Sang Song ,  Ki Seon Park ,  Chan Lim

发明人： You Sung Kim ,  Kyong Min Kim ,  Chang Seo Park ,  Han Sang Song ,  Ki Seon Park ,  Chan Lim

IPC分类号： H01L218242

CPC分类号： H01L21/31604 ,  H01L21/28568 ,  H01L28/56 ,  Y10S438/957

摘要： There is disclosed a method of manufacturing a capacitor in a semiconductor device capable of effectively removing the organic impurity of a Ta2O5 film by performing an in-situ plasma process using the mixture gas of nitrogen and oxygen during the process of forming the Ta2O5 film as the dielectric film of the capacitor. Thus, it can reduce the impurity of the Ta2O5 film to increase the supply of oxygen, and thus can improve the dielectric and leak current characteristic of the Ta2O5 film. Further, it can prohibit oxidization of the underlying electrode, thus reducing the thickness of the equivalent oxide film of the capacitor as possible and sufficiently securing the capacitance of the capacitor. The method according to the present invention includes forming a polysilicon film on a semiconductor substrate in which a given underlying structure is formed; sequentially forming a first buffer layer and a metal layer on the polysilicon film to form a lower electrode; forming a Ta2O5 film on the metal layer, wherein the process of depositing the Ta2O5 film is performed by a plasma process under the mixture gas atmosphere of nitrogen and oxygen; and forming a second buffer layer and an upper electrode on the Ta2O5 film.

摘要翻译： 公开了一种在半导体器件中制造电容器的方法，其能够通过在形成Ta 2 O 5膜的过程中使用氮和氧的混合气体进行原位等离子体处理来有效地除去Ta 2 O 5膜的有机杂质，作为 电容器的介质膜。 因此，可以减少Ta2O5薄膜的杂质，增加氧气供应，从而可以提高Ta2O5薄膜的介电和漏电流特性。 此外，它可以禁止底层电极的氧化，从而尽可能地减小电容器的等效氧化膜的厚度，并充分确保电容器的电容。 根据本发明的方法包括在其中形成给定的底层结构的半导体衬底上形成多晶硅膜; 在多晶硅膜上依次形成第一缓冲层和金属层，形成下电极; 在金属层上形成Ta2O5膜，其中在氮和氧的混合气体气氛下通过等离子体工艺进行沉积Ta2O5膜的工艺; 并在Ta 2 O 5膜上形成第二缓冲层和上电极。

公开(公告)号：US06303427B1

公开(公告)日：2001-10-16

申请号：US09659508

申请日：2000-09-11

申请人： Han Sang Song ,  You Sung Kim ,  Chan Lim ,  Chang Seo Park ,  Kyong Min Kim

发明人： Han Sang Song ,  You Sung Kim ,  Chan Lim ,  Chang Seo Park ,  Kyong Min Kim

IPC分类号： H01L21336

CPC分类号： H01L28/40 ,  H01L21/31604 ,  H01L28/56 ,  H01L28/60

摘要： The present invention relates to a method of manufacturing a capacitor in a semiconductor device. It is designed to solve the problem due to oxidization of the surface of the underlying tungsten electrode during thermal process performed after depositing Ta2O5 to form a dielectric film in a Ta2O5 capacitor of a MIM (Metal Insulator Metal) structure using tungsten (W) as an underlying electrode. Thus, the present invention includes forming a good thin WO3 film by processing the surface of the underlying tungsten electrode by low oxidization process before forming a Ta2O5 dielectric film and then performing deposition and thermal process of Ta2O5 to form a Ta2O5 dielectric film. As a good WO3 film is formed on the surface of the underlying tungsten electrode before forming a Ta2O5 dielectric film, the grain boundary of the tungsten film is filled with oxygen atoms, thus preventing diffusion of oxygen atoms from the Ta2O5 dielectric film during a subsequent thermal process. Also, as a further oxidization of the surface of the underlying tungsten electrode by the WO3 film could be prevented, thereby improving the characteristic of the leak current of the Ta2O5 capacitor.

摘要翻译： 本发明涉及一种在半导体器件中制造电容器的方法。 其设计用于解决在沉积Ta 2 O 5之后进行的热处理期间底层钨电极的表面的氧化的问题，以在使用钨（W）作为（W）的MIM（金属绝缘体金属）结构的MIM（金属绝缘体金属）结构的Ta 2 O 5电容器中形成介电膜 底层电极。 因此，本发明包括通过在形成Ta 2 O 5介电膜之前通过低氧化处理来处理下面的钨电极的表面，然后进行Ta 2 O 5的沉积和热处理以形成Ta 2 O 5电介质膜来形成良好的薄WO 3膜。 由于在形成Ta 2 O 5电介质膜之前在下面的钨电极的表面上形成良好的WO 3膜，所以钨膜的晶界被氧原子填充，从而防止在随后的热过程中氧原子从Ta 2 O 5介电膜扩散 处理。 此外，通过WO 3膜可以防止下层钨电极的表面的进一步氧化，从而提高Ta2O5电容器的漏电流的特性。

公开(公告)号：US08565027B2

公开(公告)日：2013-10-22

申请号：US13310236

申请日：2011-12-02

申请人： Bum Dol Kim ,  You Sung Kim

发明人： Bum Dol Kim ,  You Sung Kim

IPC分类号： G11C7/06

CPC分类号： G11C5/143 ,  G11C2207/2227

摘要： A multi-chip package includes a voltage generating circuit configured to generate a power source voltage and a plurality of memory chips coupled to the voltage generating circuit to each receive the power source voltage, wherein the memory chips are each configured to postpone an operation if the power source voltage is lower than a target voltage and perform the operation when the power source voltage reaches the target voltage.

摘要翻译： 多芯片封装包括：电压产生电路，被配置为产生电源电压;以及多个存储器芯片，其耦合到所述电压发生电路，以接收所述电源电压，其中所述存储器芯片各自被配置为延迟操作，如果 电源电压低于目标电压，并且当电源电压达到目标电压时执行操作。

公开(公告)号：US20120314514A1

公开(公告)日：2012-12-13

申请号：US13492132

申请日：2012-06-08

申请人： Tae Heui Kwon ,  You Sung Kim

发明人： Tae Heui Kwon ,  You Sung Kim

IPC分类号： H01L27/088 ,  G11C5/14

CPC分类号： G11C16/08 ,  G11C7/18 ,  G11C8/14 ,  H01L27/11582

摘要： A semiconductor memory device includes word lines stacked over a substrate having a plurality of memory block regions, select lines arranged over the word lines, vertical channel layers formed to penetrate through the select lines and the word lines and extending to the substrate, and a charge trap layer disposed between the word lines and the vertical channel layers, wherein the stacked word lines are separated by memory block groups that each include two or more memory block regions.

摘要翻译： 半导体存储器件包括堆叠在具有多个存储块区域的衬底上的字线，排列在字线之上的选择线，形成为穿透选择线和字线并延伸到衬底的垂直沟道层，以及电荷 陷阱层设置在字线和垂直沟道层之间，其中堆叠字线由每个包括两个或更多个存储块区域的存储器块组分隔开。

公开(公告)号：US08199583B2

公开(公告)日：2012-06-12

申请号：US12702213

申请日：2010-02-08

申请人： You Sung Kim ,  Duck Ju Kim

发明人： You Sung Kim ,  Duck Ju Kim

IPC分类号： G11C16/06

CPC分类号： G11C16/10 ,  G11C11/5642

摘要： A method of performing a read operation in a flash memory device is disclosed. The flash memory has a memory cell array including at least one block, the block having a plurality of pages. The method comprises receiving a read command to read data from a selected page in the block; determining whether or not the block has any page that has not been programmed; performing a dummy data program operation on at least one page that is determined not to have been programmed; and executing the read command to read the data of the selected page after the dummy data program operation is completed.

摘要翻译： 公开了一种在闪速存储器件中执行读取操作的方法。 闪速存储器具有包括至少一个块的存储单元阵列，该块具有多个页。 该方法包括接收读取命令以从块中的所选页面读取数据; 确定块是否具有尚未被编程的任何页面; 在确定不被编程的至少一个页面上执行伪数据程序操作; 并且在完成虚拟数据编程操作之后执行读取命令以读取所选择的页面的数据。

公开(公告)号：US08138821B2

公开(公告)日：2012-03-20

申请号：US12460050

申请日：2009-07-13

申请人： You Sung Kim

发明人： You Sung Kim

IPC分类号： G05F1/10 ,  G05F3/02

CPC分类号： H02M3/07

摘要： A swing width control circuit and a high voltage pumping circuit using the same are disclosed. The swing width control circuit includes a swing width controller for receiving a first pumping signal having a first swing width and generating a second pumping signal having a second swing width larger than the first swing width of the first pumping signal, in accordance with a level of a supply voltage to pump or precharge a voltage of a specific node, and a swing width holding device for maintaining a swing width of the specific node to be equal to the second swing width of the second pumping signal.

摘要翻译： 公开了一种摆幅控制电路和使用其的高压抽运电路。 摆幅控制电路包括摆幅宽度控制器，用于接收具有第一摆幅宽度的第一泵浦信号，并产生具有大于第一泵送信号的第一摆幅宽度的第二摆幅宽度的第二泵浦信号， 用于泵送或预充电特定节点的电压的电源电压以及用于将特定节点的摆动宽度保持为等于第二抽出信号的第二摆动宽度的摆动宽度保持装置。

公开(公告)号：US08068368B2

公开(公告)日：2011-11-29

申请号：US12702199

申请日：2010-02-08

申请人： You Sung Kim ,  Duck Ju Kim

发明人： You Sung Kim ,  Duck Ju Kim

IPC分类号： G11C16/06

CPC分类号： G11C16/10 ,  G11C11/5642

摘要： A method of performing a read operation in a flash memory device is disclosed. The flash memory has a memory cell array including at least one block, the block having a plurality of pages. The method comprises receiving a read command to read data from a selected page in the block; determining whether or not the block has any page that has not been programmed; performing a dummy data program operation on at least one page that is determined not to have been programmed; and executing the read command to read the data of the selected page after the dummy data program operation is completed.

摘要翻译： 公开了一种在闪速存储器件中执行读取操作的方法。 闪速存储器具有包括至少一个块的存储单元阵列，该块具有多个页。 该方法包括接收读取命令以从块中的所选页面读取数据; 确定块是否具有尚未被编程的任何页面; 在确定不被编程的至少一个页面上执行伪数据程序操作; 并且在完成虚拟数据编程操作之后执行读取命令以读取所选择的页面的数据。

公开(公告)号：US08036042B2

公开(公告)日：2011-10-11

申请号：US12650740

申请日：2009-12-31

申请人： Byung Ryul Kim ,  Duck Ju Kim ,  You Sung Kim ,  Se Chun Park

发明人： Byung Ryul Kim ,  Duck Ju Kim ,  You Sung Kim ,  Se Chun Park

IPC分类号： G11C16/06

CPC分类号： G11C16/3404 ,  G11C16/04

摘要： A method of operating a nonvolatile memory device includes performing a reset operation for setting a level of a program voltage to a first level, performing a program operation and a verification operation on memory cells included in a first page of a first memory block while raising the program voltage from the first level, storing a level of the program voltage, supplied to the first page when memory cells programmed to have threshold voltages with at least a verification voltage are detected during the verification operation, as a second level, while raising the program voltage from the second level, performing the program operation and the verification operation on each of second to last pages of the first memory block, and after completing the program operation for the first memory block, performing the reset operation for setting the level of the program voltage to the first level.

摘要翻译： 一种操作非易失性存储器件的方法包括执行用于将程序电压的电平设置为第一电平的复位操作，对包括在第一存储块的第一页中的存储器单元执行编程操作和验证操作，同时提高 当在验证操作期间检测到被编程为具有至少具有验证电压的阈值电压的存储单元时，提供给第一页的程序电压电平作为第二电平，同时提高程序 电压从第二电平开始，对第一存储块的第二至第二页中的每一个执行编程操作和验证操作，并且在完成第一存储器块的编程操作之后，执行用于设置程序电平的复位操作 电压到第一级。

公开(公告)号：US20110080785A1

公开(公告)日：2011-04-07

申请号：US12968087

申请日：2010-12-14

申请人： You Sung KIM

发明人： You Sung KIM

IPC分类号： G11C11/34

CPC分类号： G11C11/5621 ,  G11C2211/5641 ,  G11C2211/5642

摘要： Multi-chip package devices and related data programming methods are disclosed. A multi-chip package device includes one or more memory chips and a controller. The one or more memory chips include a single level cell section and a multi level cell section. The controller is configured to control a first data storing operation for storing an input data to the single level cell section and control a second data storing operation for storing the input data stored in the single level section to the multi level cell section during an idle time.

摘要翻译： 公开了多芯片封装器件和相关数据编程方法。 多芯片封装器件包括一个或多个存储器芯片和控制器。 一个或多个存储器芯片包括单级单元部分和多级单元部分。 控制器被配置为控制用于将输入数据存储到单级单元部分的第一数据存储操作，并且在空闲时间期间控制用于将存储在单级部分中的输入数据存储到多级单元部分的第二数据存储操作 。

公开(公告)号：US20100302864A1

公开(公告)日：2010-12-02

申请号：US12650740

申请日：2009-12-31

申请人： Byung Ryul KIM ,  Duck Ju Kim ,  You Sung Kim ,  Se Chun Park

发明人： Byung Ryul KIM ,  Duck Ju Kim ,  You Sung Kim ,  Se Chun Park

IPC分类号： G11C16/06 ,  G11C16/04

CPC分类号： G11C16/3404 ,  G11C16/04

摘要： A method of operating a nonvolatile memory device includes performing a reset operation for setting a level of a program voltage to a first level, performing a program operation and a verification operation on memory cells included in a first page of a first memory block while raising the program voltage from the first level, storing a level of the program voltage, supplied to the first page when memory cells programmed to have threshold voltages with at least a verification voltage are detected during the verification operation, as a second level, while raising the program voltage from the second level, performing the program operation and the verification operation on each of second to last pages of the first memory block, and after completing the program operation for the first memory block, performing the reset operation for setting the level of the program voltage to the first level.

摘要翻译： 一种操作非易失性存储器件的方法包括执行用于将程序电压的电平设置为第一电平的复位操作，对包括在第一存储块的第一页中的存储器单元执行编程操作和验证操作，同时提高 当在验证操作期间检测到被编程为具有至少具有验证电压的阈值电压的存储单元时，提供给第一页的程序电压电平作为第二电平，同时提高程序 电压从第二电平开始，对第一存储块的第二至第二页中的每一个执行编程操作和验证操作，并且在完成第一存储器块的编程操作之后，执行用于设置程序电平的复位操作 电压到第一级。