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    Heating zone separation for reactant evaporation system
    51.
    发明授权
    Heating zone separation for reactant evaporation system 有权

    公开(公告)号：US11624113B2

    公开(公告)日：2023-04-11

    申请号：US17011828

    申请日：2020-09-03

    Applicant: ASM IP HOLDING B.V.

    Inventor： Carl Louis White ,  Eric James Shero ,  Kyle Fondurulia

    IPC: C23C16/448 ,  C23C16/455 ,  C23C16/48 ,  C23C16/44 ,  C23C16/52

    Abstract: Systems and methods related to temperature zone control systems can include a reactant source cabinet that is configured to be at least partially evacuated, a vessel base that is configured to hold solid source chemical reactant therein, and a lid that is coupled to a distal portion of the vessel base. The lid may include one or more lid valves. The system may further include a plurality of gas panel valves that are configured to deliver gas from a gas source to the vessel. The system may include a heating element that is configured to heat the one or more lid valves. The system may include a heat shield, a first portion of which is disposed between the one or more lid valves and the vessel base. A second portion of the heat shield may be disposed between the first heating element and the plurality of gas panel valves.

    REACTOR MANIFOLDS
    53.
    发明申请
    REACTOR MANIFOLDS 有权

    公开(公告)号：US20230069359A1

    公开(公告)日：2023-03-02

    申请号：US18045419

    申请日：2022-10-10

    Applicant: ASM IP HOLDING B.V.

    Inventor： Shuyang Zheng ,  Jereld Lee Winkler ,  Ankit Kimtee ,  Eric James Shero ,  Mimoh Kwatra ,  Dinkar Nandwana ,  Todd Robert Dunn ,  Carl Louis White

    IPC: C23C16/455

    Abstract: Herein disclosed are systems and methods related to semiconductor processing device including a manifold including a bore configured to deliver a gas to a reaction chamber, the manifold including a first block mounted to a second block, the first and second mounted blocks cooperating to at least partially define the bore. The manifold may further comprise an insulator cap disposed about the first block or the second block. The semiconductor processing device may comprise at least three valve blocks mounted to the second block so that a precursor backflow is prevented. Heater rod(s) can extend through the second block to a location adjacent the first block.

    Method of forming structures including a vanadium or indium layer
    55.
    发明授权
    Method of forming structures including a vanadium or indium layer 有权

    公开(公告)号：US11521851B2

    公开(公告)日：2022-12-06

    申请号：US17162279

    申请日：2021-01-29

    Applicant: ASM IP Holding B.V.

    Inventor： Eric James Shero ,  Michael Eugene Givens ,  Qi Xie ,  Charles Dezelah ,  Giuseppe Alessio Verni

    IPC: H01L21/02 ,  H01L29/423 ,  H01L29/06 ,  H01L29/66 ,  H01L27/092

    Abstract: Methods and systems for depositing vanadium and/or indium layers onto a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a vanadium and/or indium layer onto the surface of the substrate. The cyclical deposition process can include providing a vanadium and/or indium precursor to the reaction chamber and separately providing a reactant to the reaction chamber. The cyclical deposition process may desirably be a thermal cyclical deposition process. Exemplary structures can include field effect transistor structures, such as gate all around structures. The vanadium and/or indium layers can be used, for example, as barrier layers or liners, as work function layers, as dipole shifter layers, or the like.

    MANIFOLDS FOR UNIFORM VAPOR DEPOSITION
    56.
    发明申请
    MANIFOLDS FOR UNIFORM VAPOR DEPOSITION 有权

    公开(公告)号：US20220349060A1

    公开(公告)日：2022-11-03

    申请号：US17810115

    申请日：2022-06-30

    Applicant: ASM IP HOLDING B.V.

    Inventor： David Marquardt ,  Andrew Michael Yednak, III ,  Eric James Shero ,  Herbert Terhorst

    IPC: C23C16/455 ,  H01L21/02 ,  H01L21/285

    Abstract: A semiconductor device comprising a manifold for uniform vapor deposition is disclosed. The semiconductor device can include a manifold comprising a bore and having an inner wall. The inner wall can at least partially define the bore. A first axial portion of the bore can extend along a longitudinal axis of the manifold. A supply channel can provide fluid communication between a gas source and the bore. The supply channel can comprise a slit defining an at least partially annular gap through the inner wall of the manifold to deliver a gas from the gas source to the bore. The at least partially annular gap can be revolved about the longitudinal axis.

    VAPOR DEPOSITION OF TUNGSTEN FILMS
    58.
    发明申请
    VAPOR DEPOSITION OF TUNGSTEN FILMS 有权

    公开(公告)号：US20210404060A1

    公开(公告)日：2021-12-30

    申请号：US17353356

    申请日：2021-06-21

    Applicant: ASM IP HOLDING B.V.

    Inventor： Robert Brennan Milligan ,  Eric James Shero ,  Shankar Swaminathan ,  Bhushan Zope

    IPC: C23C16/455 ,  C23C16/06

    Abstract: Vapor deposition methods for depositing tungsten-containing thin films are provided. In some embodiments a substrate is contacted with a vapor phase first reactant comprising a tungsten precursor, such as a tungsten oxyhalide, a second reactant such as CO, and a third reactant such as H2. In some embodiments a substrate is contacted with a vapor phase first reactant comprising a tungsten precursor, such as a tungsten hexacarbonyl, a second reactant comprising a first oxidant, such as H2O, and a third reactant comprising a reducing agent, such as CO. In some embodiments the deposition process is an ALD process.

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