摘要:
Provided is a transmission circuit 1 which is capable of precisely compensating for an offset characteristic of an amplitude modulation section 15, and operating with low distortion and high efficiency over a wide output electric power range. A signal generation section 11 outputs an amplitude signal and an angle modulation signal. An amplitude amplifying section 14 inputs, to the amplitude modulation section 15, a signal corresponding to a magnitude of the amplitude signal having been inputted. The amplitude modulation section 15 amplitude-modulates the angle modulation signal with the signal inputted from the amplitude amplifying section 14, and outputs a resultant signal as a modulation signal. The power measuring section 18 measures an output power of the amplitude modulation section 15. An offset compensation section 12 reads an offset compensation value from a memory 13 in accordance with the output power of the amplitude modulation section 15, and adds the read offset compensation value to the amplitude signal.
摘要:
A polar modulation transmission apparatus for realizing a wide control range for transmission power, maintaining the modulation precision and the distortion characteristic at a superb level even at a low output, and providing a high power efficiency is provided. An adder 102 adds a logarithm-represented transmission power control signal S13 to a logarithm-represented amplitude signal S14, and outputs the resultant signal as a transmission power-controlled amplitude signal S5. A phase modulation section 104 outputs a high frequency phase-modulated signal S8 based on a phase signal S3. An amplitude signal amplifier 103 supplies a supply voltage to a high frequency power amplifier 106 based on an amplitude signal S5. The high frequency power amplifier 106 performs amplitude modulation on the high frequency phase-modulated signal S8 based on the supply voltage supplied thereto, and outputs the resultant signal as a high frequency transmission signal S10.
摘要:
A field effect transistor comprises: a semiconductor substrate; a semiconductor layer provided on the semiconductor substrate, the semiconductor layer including a body region which contains an impurity of a first conductivity type; a gate dielectric film provided on the semiconductor layer; a gate electrode provided on the gate dielectric film; and a source region and a drain region provided in the semiconductor layer at positions below the sides of the gate electrode, the source region and the drain region containing an impurity of a second conductivity type. The gate electrode and the body region are electrically short-circuited. In the semiconductor layer except for the source region and the drain region, at least part of a junction portion bordering on the source region or the drain region contains the impurity of the first conductivity type with a higher concentration than in the body region except for junction portions bordering on the source region and the drain region.
摘要:
On an Si substrate 1, a buffer layer 2, a SiGe layer 3, and an Si cap layer 4 are formed. A mask is formed on the substrate, and then the substrate is patterned. In this manner, a trench 7a is formed so as to reach the Si substrate 1 and have the side faces of the SiGe layer 3 exposed. Then, the surface of the trench 7a is subjected to heat treatment for one hour at 750° C. so that Ge contained in a surface portion of the SiGe layer 3 is evaporated. Thus, a Ge evaporated portion 8 having a lower Ge content than that of other part of the SiGe layer 3 is formed in part of the SiGe layer 3 exposed at part of the trench 7a. Thereafter, the walls of the trench 7a are oxidized.
摘要:
On an Si substrate 1, a buffer layer 2, a SiGe layer 3, and an Si cap layer 4 are formed. A mask is formed on the substrate, and then the substrate is patterned. In this manner, a trench 7a is formed so as to reach the Si substrate 1 and have the side faces of the SiGe layer 3 exposed. Then, the surface of the trench 7a is subjected to heat treatment for one hour at 750° C. so that Ge contained in a surface portion of the SiGe layer 3 is evaporated. Thus, a Ge evaporated portion 8 having a lower Ge content than that of other part of the SiGe layer 3 is formed in part of the SiGe layer 3 exposed at part of the trench 7a. Thereafter, the walls of the trench 7a are oxidized.
摘要:
In an image retrieving apparatus for retrieving a retrieving image in an input image, a color histogram of an image in a retrieving area in the input image is compared with a color histogram of the retrieving image. At first, a candidate area in which the retrieving image can be included is roughly retrieved by rough image retrieving with selecting a larger retrieving area and a rough resolution of gradation of the histograms. Subsequently, an area including an image corresponding to the retrieving image is precisely retrieved by fine image retrieving with a smaller retrieving area and a fine resolution of gradation of the histograms.
摘要:
A method for reclaiming a wafer substrate material having a metallic film and a dielectric film includes a step for removing the entire metallic film and a part of the dielectric film with a chemical etching agent so as not to substantially dissolve the wafer substrate material itself, a step for removing the residual dielectric layer and the degenerated zone beneath the surface of the substrate by chemical-mechanical polishing, and a step for polishing at least one surface of the substrate.
摘要:
An optical apparatus is provided with a detector for detecting a shake of the apparatus relative to an object at a predetermined interval, a corrector for correcting a shake of the apparatus based on a detection result of the detector, a driver for driving the corrector, a calculator for calculating an estimative shake at a predetermined point of time in a next interval based on a detection result of the detector, and a controller for controlling the driver based on a calculation result of the calculator to drive the corrector to effect correction for the shake at the predetermined point of time in the next interval.
摘要:
A camera capable of shake correction, and is provided with: a sensor for sensing a light image of an object to detect a camera shake; an exposure time setter for setting a first exposure time based on a brightness of an object and a second exposure time smaller than the first exposure time; and a controller for judging as to whether the shake correction is disable, and controlling exposure with reference to the second exposure time when the shake correction is judged to be disable.
摘要:
A programmable electronic sewing machine includes input means for supplying input data when operated by a user, and sewing program composing means for composing a sewing program for the sewing machine on the basis of the input data supplied from the input means. The sewing program composing means composes the same sewing program on the basis of the input data supplied from the input means when the input means is operated in two or more different operating procedures.