公开(公告)号：US06451696B1

公开(公告)日：2002-09-17

申请号：US09384725

申请日：1999-08-27

申请人： Yoshihiro Hara ,  Tetsuo Suzuki ,  Satoru Takada ,  Hidetoshi Inoue

发明人： Yoshihiro Hara ,  Tetsuo Suzuki ,  Satoru Takada ,  Hidetoshi Inoue

IPC分类号： H01L21302

CPC分类号： H01L21/02032

摘要： A method for reclaiming a wafer substrate material having a metallic film and a dielectric film includes a step for removing the entire metallic film and a part of the dielectric film with a chemical etching agent so as not to substantially dissolve the wafer substrate material itself, a step for removing the residual dielectric layer and the degenerated zone beneath the surface of the substrate by chemical-mechanical polishing, and a step for polishing at least one surface of the substrate.

摘要翻译： 用于回收具有金属膜和电介质膜的晶片衬底材料的方法包括用化学蚀刻剂去除整个金属膜和一部分电介质膜以便基本上不溶解晶片衬底材料本身的步骤， 用于通过化学机械抛光去除基底表面下面的残余介电层和退化区的步骤，以及用于抛光基底的至少一个表面的步骤。

公开(公告)号：US20060255314A1

公开(公告)日：2006-11-16

申请号：US11129444

申请日：2005-05-16

申请人： Tetsuo Suzuki ,  Satoru Takada

发明人： Tetsuo Suzuki ,  Satoru Takada

IPC分类号： C09K13/00 ,  H01L21/461 ,  C09K13/06

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  C09K13/08 ,  H01L21/02079

摘要： The polishing slurry contains monoclinic zirconium oxide particles having a crystallite size of 10 to 1,000 nm and an average particle diameter of 30 to 2,000 nm in an amount of 1 to 20 weight %, a carboxylic acid having three or more carboxyl groups in the molecule, and a quaternary alkylammonium hydroxide, and has a pH of 9 to 12. The method of reclaiming wafers comprises a step of polishing used test wafers by using the polishing slurry above and removing the films formed on the wafers and the degenerated layers formed on the wafer surfaces, a step of mirror-polishing at least one side of the wafers, and a step of cleaning the wafers.

摘要翻译： 研磨浆料含有微晶尺寸为10〜1000nm，平均粒径为30〜2000nm，分子量为1〜20重量％的羧酸的单斜晶氧化锆粒子， 和季铵烷基氢氧化铵，并且具有9至12的pH值。回收晶片的方法包括通过使用上述抛光浆料抛光所用测试晶片并除去形成在晶片上的膜和形成在晶片上的退化层的步骤 表面，对晶片的至少一侧进行镜面抛光的步骤，以及清洁晶片的步骤。

公开(公告)号：US06884634B2

公开(公告)日：2005-04-26

申请号：US10255668

申请日：2002-09-27

申请人： Tetsuo Suzuki ,  Satoru Takada

发明人： Tetsuo Suzuki ,  Satoru Takada

IPC分类号： G01N27/04 ,  H01L21/66 ,  H01L23/544 ,  H01L21/00

CPC分类号： H01L22/34

摘要： A method of specifying a Cu-contamination-causative step or steps in a Si wafer reclamation process including plural steps in combination, comprising: using p-type Si wafers, or p-type Si wafers and n-type Si wafers as monitor wafers, and performing a measuring operation for measuring the electrical resistance of the monitor wafers at least once before and after a single step or a series of successive steps during the Si wafer reclamation process. The present invention is capable of nondestructively, simply, and accurately detecting Cu that can contaminate Si wafers during a Si wafer reclamation process and is capable of specifying a Cu-contamination-causative process.

摘要翻译： 一种在包括多个步骤的Si晶片回收处理中指定Cu-污染致动步骤或步骤的方法，包括：使用p型Si晶片或p型Si晶片和n型Si晶片作为监测晶片， 并且在Si晶片回收处理期间，在单个步骤或一系列连续步骤之前和之后，至少进行一次测量监视晶片的电阻的测量操作。 本发明能够非破坏性，简单地且精确地检测在Si晶片回收过程中可能污染Si晶片的Cu，并且能够指定Cu-污染致病过程。

公开(公告)号：US07452481B2

公开(公告)日：2008-11-18

申请号：US11129444

申请日：2005-05-16

申请人： Tetsuo Suzuki ,  Satoru Takada

发明人： Tetsuo Suzuki ,  Satoru Takada

IPC分类号： C09K13/00 ,  C09K13/06 ,  H01L21/461

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  C09K13/08 ,  H01L21/02079

摘要： The polishing slurry contains monoclinic zirconium oxide particles having a crystallite size of 10 to 1,000 nm and an average particle diameter of 30 to 2,000 nm in an amount of 1 to 20 weight %, a carboxylic acid having three or more carboxyl groups in the molecule, and a quaternary alkylammonium hydroxide, and has a pH of 9 to 12. The method of reclaiming wafers comprises a step of polishing used test wafers by using the polishing slurry above and removing the films formed on the wafers and the degenerated layers formed on the wafer surfaces, a step of mirror-polishing at least one side of the wafers, and a step of cleaning the wafers.

摘要翻译： 研磨浆料含有微晶尺寸为10〜1000nm，平均粒径为30〜2000nm，分子量为1〜20重量％的羧酸的单斜晶氧化锆粒子， 和季铵烷基氢氧化铵，并且具有9至12的pH值。回收晶片的方法包括通过使用上述抛光浆料抛光所用测试晶片并除去形成在晶片上的膜和形成在晶片上的退化层的步骤 表面，对晶片的至少一侧进行镜面抛光的步骤，以及清洁晶片的步骤。

公开(公告)号：US07699997B2

公开(公告)日：2010-04-20

申请号：US10677309

申请日：2003-10-03

申请人： Tetsuo Suzuki ,  Satoru Takada

发明人： Tetsuo Suzuki ,  Satoru Takada

IPC分类号： C03C25/68

CPC分类号： H01L21/02032 ,  H01L21/3221 ,  H01L21/324

摘要： A method of reclaiming silicon wafers including a film removal process, a polishing process, and a cleaning process, wherein a heating/removal process for removing a silicon wafer surface part by heating at 150-300° C. for 20 minutes to 5 hours is further included between the film removal process and the polishing process is provided. The present invention provides a useful method of reclaiming silicon wafers that removes Cu not only deposited on a surface but also penetrated inside of a silicon wafer, and does not give Cu contamination inside of the silicon wafer.

摘要翻译： 一种回收硅晶片的方法，包括膜去除工艺，抛光工艺和清洁工艺，其中通过在150-300℃下加热20分钟至5小时除去硅晶片表面部分的加热/除去工艺是 提供了膜去除工艺和抛光工艺之间的进一步包括。 本发明提供一种回收硅晶片的有用方法，该硅晶片除去不仅沉积在表面上而且也渗入硅晶片内部的Cu，并且不会在硅晶片内部产生Cu污染。

公开(公告)号：US20050092349A1

公开(公告)日：2005-05-05

申请号：US10677309

申请日：2003-10-03

申请人： Tetsuo Suzuki ,  Satoru Takada

发明人： Tetsuo Suzuki ,  Satoru Takada

IPC分类号： H01L21/304 ,  C23G1/00 ,  H01L21/02 ,  H01L21/30 ,  H01L21/302 ,  H01L21/306 ,  H01L21/322 ,  H01L21/324

CPC分类号： H01L21/02032 ,  H01L21/3221 ,  H01L21/324

摘要： A method of reclaiming silicon wafers including a film removal process, a polishing process, and a cleaning process, wherein a heating/removal process for removing a silicon wafer surface part by heating at 150-300° C. for 20 minutes to 5 hours is further included between the film removal process and the polishing process is provided. The present invention provides a useful method of reclaiming silicon wafers that removes Cu not only deposited on a surface but also penetrated inside of a silicon wafer, and does not give Cu contamination inside of the silicon wafer.

摘要翻译： 一种回收硅晶片的方法，包括膜去除工艺，抛光工艺和清洁工艺，其中通过在150-300℃下加热20分钟至5小时除去硅晶片表面部分的加热/除去工艺是 提供了膜去除工艺和抛光工艺之间的进一步包括。 本发明提供一种回收硅晶片的有用方法，该硅晶片除去不仅沉积在表面上而且也渗入硅晶片内部的Cu，并且不会在硅晶片内部产生Cu污染。

公开(公告)号：US5885334A

公开(公告)日：1999-03-23

申请号：US857366

申请日：1997-05-15

申请人： Tetsuo Suzuki ,  Yoshihiro Hara

发明人： Tetsuo Suzuki ,  Yoshihiro Hara

IPC分类号： C09G1/02 ,  C09K3/14 ,  C09K13/04

CPC分类号： C09G1/02 ,  C09K3/1463

摘要： The present invention provides a polishing fluid composition which can effectively polish a surface of a semiconductor silicon wafer or a surface of a film comprising silicon to be formed on silicon wafers with a markedly reduced amount of colloidal silica to be used as abrasives, or a polishing fluid composition which is particularly useful for a polishing step after removal of an oxide layer in a two-step polishing method. The former polishing fluid composition comprises an alkaline suspension which contains a water-soluble silicic acid component, colloidal silica and an alkaline component, and which has a pH value of 8.5 to 13. Meanwhile, the latter polishing fluid composition comprises an alkaline solution which contains a water-soluble silicic acid component and an alkaline component, and which has a pH value of 8.5 to 13; and is substantially free of abrasive particles.

摘要翻译： 本发明提供了一种抛光液组合物，其可以有效地抛光半导体硅晶片的表面或包含待形成硅晶片的表面，其中硅晶片的显微减少量用作研磨剂，或抛光 流体组合物，其特别可用于在两步抛光方法中除去氧化物层之后的抛光步骤。 前述抛光液组合物含有含有水溶性硅酸成分，胶体二氧化硅和碱性成分的碱性悬浮液，其pH值为8.5〜13。另外，后者的研磨液组合物含有碱溶液，其含有 水溶性硅酸成分和碱性成分，pH值为8.5〜13， 并且基本上不含磨料颗粒。

公开(公告)号：US08859077B2

公开(公告)日：2014-10-14

申请号：US13028588

申请日：2011-02-16

申请人： Shinnosuke Maeda ,  Tetsuo Suzuki ,  Satoshi Hirano

发明人： Shinnosuke Maeda ,  Tetsuo Suzuki ,  Satoshi Hirano

IPC分类号： B32B3/24 ,  H05K3/46 ,  H05K1/11 ,  H05K3/20

CPC分类号： H05K3/4682 ,  H05K1/112 ,  H05K3/205 ,  H05K2201/094 ,  H05K2201/09472 ,  H05K2201/099 ,  Y10T428/24331 ,  Y10T428/24339

摘要： A plurality of openings are formed in a resin insulation layer on a bottom surface side of a wiring laminate portion which constitutes a multilayer wiring substrate. A plurality of motherboard connection terminals are disposed to correspond to the openings. The motherboard connection terminals are primarily comprised of a copper layer, and peripheral portions of terminal outer surfaces thereof are covered by the outermost resin insulation layer. A dissimilar metal layer made of at least one metal which is lower in etching rate than copper is formed between an inner main surface of the outermost resin insulation layer and peripheral portions of the terminal outer surfaces.

摘要翻译： 在构成多层布线基板的布线层叠体的底面侧的树脂绝缘层上形成有多个开口部。 多个主板连接端子被设置成对应于这些开口。 母板连接端子主要由铜层构成，其端子外表面的周边部分被最外层树脂绝缘层覆盖。 在最外层树脂绝缘层的内主表面和端子外表面的周边部分之间形成由蚀刻速率低于铜的至少一种金属制成的异种金属层。

公开(公告)号：US08707554B2

公开(公告)日：2014-04-29

申请号：US12979474

申请日：2010-12-28

申请人： Shinnosuke Maeda ,  Tetsuo Suzuki ,  Takuya Hando ,  Tatsuya Ito ,  Satoshi Hirano ,  Atsuhiko Sugimoto

发明人： Shinnosuke Maeda ,  Tetsuo Suzuki ,  Takuya Hando ,  Tatsuya Ito ,  Satoshi Hirano ,  Atsuhiko Sugimoto

IPC分类号： H01R9/00 ,  H05K3/00

CPC分类号： H05K1/0298 ,  H01L21/4846 ,  H01L23/49822 ,  H01L2224/16225 ,  H05K1/09 ,  H05K1/111 ,  H05K1/113 ,  H05K3/0055 ,  H05K3/3452 ,  H05K3/4682 ,  H05K2201/068 ,  H05K2201/094 ,  H05K2201/0989 ,  H05K2201/099

摘要： In a build-up step, a plurality of resin insulation layers and a plurality of conductive layers are alternately laminated in multilayer arrangement on a metal foil separably laminated on a side of a base material, thereby forming a wiring laminate portion. In a drilling step, a plurality of openings are formed in an outermost resin insulation layer through laser drilling so as to expose connection terminals. Subsequently, in a desmear step, smears from inside the openings are removed. In a base-material removing step performed after the build-up step, the base material is removed and the metal foil is exposed.

摘要翻译： 在堆积步骤中，将多个树脂绝缘层和多个导电层以多层布置交替层叠在可分离地层叠在基材侧上的金属箔上，从而形成布线层压体部分。 在钻井工序中，通过激光钻孔在最外层的树脂绝缘层上形成多个开口，露出连接端子。 随后，在去污步骤中，去除开口内部的污迹。 在堆积步骤之后执行的基材除去步骤中，除去基材并暴露金属箔。

公开(公告)号：US20110252852A1

公开(公告)日：2011-10-20

申请号：US13140379

申请日：2009-10-22

申请人： Yoshiharu Watabe ,  Seiichi Minegishi ,  Tetsuo Suzuki ,  Masaomi Saruyama ,  Masashi Takagaki

发明人： Yoshiharu Watabe ,  Seiichi Minegishi ,  Tetsuo Suzuki ,  Masaomi Saruyama ,  Masashi Takagaki

IPC分类号： C21D9/40 ,  B21D26/02 ,  C21D1/00

CPC分类号： C21D9/0025 ,  B21D26/033 ,  C21D9/40 ,  F27D5/0006

摘要： Provided are a conveying jig, a method of manufacturing the conveying jig, and a method of heat-treating metal rings using the conveying jig. The conveying jig is provided with a base and ten holding shafts raised from the base. Ridges and grooves are alternatively provided in the side wall of each holding shaft. The metal rings are held in position by being engaged in the grooves in the holding shafts. The space enclosed within the holding shafts is communicated with the atmosphere, and this allows, when the metal rings held by the conveying jig are subjected to heat treatment in a heat treatment furnace, an atmospheric gas to circulate in the space enclosed within the holding shafts.

摘要翻译： 提供了输送夹具，制造输送夹具的方法以及使用输送夹具对金属环进行热处理的方法。 输送夹具设有一个基座和十个从底座上升的保持轴。 在每个保持轴的侧壁中可选地设置有脊和槽。 金属环通过接合在保持轴中的槽中而保持就位。 封闭在保持轴内的空间与大气连通，这样当由输送夹具保持的金属环在热处理炉中进行热处理时，能够在封闭在保持轴内的空间内循环大气 。