公开(公告)号：US06451696B1

公开(公告)日：2002-09-17

申请号：US09384725

申请日：1999-08-27

申请人： Yoshihiro Hara ,  Tetsuo Suzuki ,  Satoru Takada ,  Hidetoshi Inoue

发明人： Yoshihiro Hara ,  Tetsuo Suzuki ,  Satoru Takada ,  Hidetoshi Inoue

IPC分类号： H01L21302

CPC分类号： H01L21/02032

摘要： A method for reclaiming a wafer substrate material having a metallic film and a dielectric film includes a step for removing the entire metallic film and a part of the dielectric film with a chemical etching agent so as not to substantially dissolve the wafer substrate material itself, a step for removing the residual dielectric layer and the degenerated zone beneath the surface of the substrate by chemical-mechanical polishing, and a step for polishing at least one surface of the substrate.

摘要翻译： 用于回收具有金属膜和电介质膜的晶片衬底材料的方法包括用化学蚀刻剂去除整个金属膜和一部分电介质膜以便基本上不溶解晶片衬底材料本身的步骤， 用于通过化学机械抛光去除基底表面下面的残余介电层和退化区的步骤，以及用于抛光基底的至少一个表面的步骤。

公开(公告)号：US5855735A

公开(公告)日：1999-01-05

申请号：US538265

申请日：1995-10-03

申请人： Satoru Takada ,  Hidetoshi Inoue ,  Yoshihiro Hara

发明人： Satoru Takada ,  Hidetoshi Inoue ,  Yoshihiro Hara

IPC分类号： H01L21/66 ,  B24B9/06 ,  B24B21/00 ,  B24B37/04 ,  H01L21/02 ,  H01L21/30 ,  H01L21/304 ,  C23F3/00

CPC分类号： H01L21/02032 ,  B24B21/00 ,  B24B37/04 ,  B24B9/065 ,  H01L21/02079 ,  H01L21/30

摘要： A process comprising removing surface layer materials from the wafer by inducing micro-fractures in the surface using a rotating pad and an abrasive slurry until all of the surface layer materials are removed; and chemically etching the surfaces of the wafer until all micro-fractures are removed therefrom. Edge materials are removed by abrasive tape. Wafer thickness reduction during recycling is less than 30 microns per cycle. One of the front and back surfaces of the wafer substrate is polished, any dots or grooves being on the non-polished side. The abrasive slurry contains more than 6 volume percent abrasive particles, and the abrasive slurry has a viscosity greater than about 2 cP at ambient temperature. The preferred pad comprises an organic polymer having a hardness greater than about 40 on the Shore D scale, optimally a polyurethane. The pressure of the pad against the wafer surface preferably does not exceed about 3 psi. Preferably, the chemical etching solution contains potassium hydroxide. An acidic solution can then be applied to the wafer surface. The reclaimed semiconductor wafer can be a silicon wafer having a matted side having etch pits which does not exceed 20 microns in width, an average roughness not exceeding 0.5 microns and a peak-to-valley roughness not exceeding 5 microns. Any laser markings from the original wafer are present on the matted side of the wafer.

摘要翻译： 一种方法，其包括通过使用旋转垫和研磨​​剂浆料在表面中诱导微裂纹从晶片去除表面层材料，直到除去所有表面层材料; 并化学蚀刻晶片的表面，直到从中除去所有的微裂缝。 边缘材料由砂带除去。 回收期间的晶片厚度减少每周期小于30微米。 对晶片基板的正面和背面之一进行抛光，任何点或凹槽位于非抛光侧。 研磨浆料含有超过6体积％的磨料颗粒，研磨浆料在环境温度下的粘度大于约2cP。 优选的垫包括在肖氏D刻度上硬度大于约40的有机聚合物，最佳地是聚氨酯。 衬垫对晶片表面的压力优选不超过约3psi。 优选地，化学蚀刻溶液含有氢氧化钾。 然后可以将酸性溶液施加到晶片表面。 回收的半导体晶片可以是具有无光泽面的蚀刻凹坑的硅晶片，其宽度不超过20微米，平均粗糙度不超过0.5微米，峰 - 谷粗糙度不超过5微米。 来自原始晶片的任何激光标记存在于晶片的无光泽侧。

公开(公告)号：US06406923B1

公开(公告)日：2002-06-18

申请号：US09630316

申请日：2000-07-31

申请人： Hidetoshi Inoue ,  Satoru Takada ,  Yoshihiro Hara

发明人： Hidetoshi Inoue ,  Satoru Takada ,  Yoshihiro Hara

IPC分类号： H01L2100

CPC分类号： H01L21/02079 ,  H01L21/02032 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/32135

摘要： A process capable of reclaiming used semiconductor wafers with a reduced metallic contamination level on wafer surfaces. The process comprises the steps of removing one or more surface layers of the substrate by chemical etching; scraping off one surface of the substrate in small amount by mechanical machining; removing a damage layer, which has occurred due to the mechanical machining, by chemical etching; and polishing the other surface of the substrate into a mirror finish.

摘要翻译： 能够在晶片表面上回收具有降低的金属污染水平的已使用的半导体晶片的工艺。 该方法包括通过化学蚀刻去除衬底的一个或多个表面层的步骤; 通过机械加工刮擦少量的基板的一个表面; 通过化学蚀刻去除由于机械加工而发生的损伤层; 并将基板的另一表面抛光成镜面。

公开(公告)号：US5580500A

公开(公告)日：1996-12-03

申请号：US297811

申请日：1994-08-30

申请人： Kazuo Muramatsu ,  Manabu Hisada ,  Hideki Yamamuro ,  Hideo Ashida ,  Satoru Takada ,  Masami Takao ,  Yoshihiro Hara ,  Nobuhiro Ota

发明人： Kazuo Muramatsu ,  Manabu Hisada ,  Hideki Yamamuro ,  Hideo Ashida ,  Satoru Takada ,  Masami Takao ,  Yoshihiro Hara ,  Nobuhiro Ota

IPC分类号： C04B35/524 ,  C01B31/00

CPC分类号： C04B35/524

摘要： A carbon substrate manufacturing method includes a hot molding step, a burn-carbonizing step, a hot isostatical pressure treatment step, and a mirror polishing step. In the hot molding step, molding is performed while heating thermosetting resin powders to be a hard carbon substrate after burn-carbonizing, where the thermosetting resin powders are of a particle size 150 .mu.m or more, HPF 80-150 mm, a moisture content 1.0-3.0 weight %, Fe, Ni, Si and Ca respectively 5 ppm or less. In the burn-carbonizing process, a disk shaped resin molded body is filled into a graphite cylinder and burn-carbonized by heating from the external while the condition therefor is maintained in that the disk shaped resin molded body is stacked holding therein a graphite spacer at every one sheet basis or at every plurality of sheet basis and is loaded on its top with a tungsten carbide weight, where the graphite spacer has a heat conductivity 100 kcal/m.hr..degree. C. or less, a bulk density 1.70-1.85, and a flatness degree 10 .mu.m or less.

摘要翻译： 碳基板制造方法包括热成型步骤，燃烧碳化步骤，热等压压力处理步骤和镜面抛光步骤。 在热成型工序中，在将热固化性树脂粉末在烧成碳化后作为硬质碳基板加热的同时进行成型，其中热固性树脂粉末的粒径为150μm以上，HPF为80-150mm，水分含量 1.0-3.0重量％，Fe，Ni，Si和Ca分别为5ppm以下。 在烧成碳化工序中，将圆盘状树脂成形体填充到石墨圆筒中，通过加热从外部进行燃烧碳化，同时保持其状态，将盘状树脂成型体层叠在一起，将石墨间隔件 每一片或多个片材基础，并以碳化钨重量装载在其顶部，其中石墨间隔物具有100kcal / m·hr的热导率。 ℃以下，体积密度1.70-1.85，平坦度10μm以下。

公开(公告)号：US5885334A

公开(公告)日：1999-03-23

申请号：US857366

申请日：1997-05-15

申请人： Tetsuo Suzuki ,  Yoshihiro Hara

发明人： Tetsuo Suzuki ,  Yoshihiro Hara

IPC分类号： C09G1/02 ,  C09K3/14 ,  C09K13/04

CPC分类号： C09G1/02 ,  C09K3/1463

摘要： The present invention provides a polishing fluid composition which can effectively polish a surface of a semiconductor silicon wafer or a surface of a film comprising silicon to be formed on silicon wafers with a markedly reduced amount of colloidal silica to be used as abrasives, or a polishing fluid composition which is particularly useful for a polishing step after removal of an oxide layer in a two-step polishing method. The former polishing fluid composition comprises an alkaline suspension which contains a water-soluble silicic acid component, colloidal silica and an alkaline component, and which has a pH value of 8.5 to 13. Meanwhile, the latter polishing fluid composition comprises an alkaline solution which contains a water-soluble silicic acid component and an alkaline component, and which has a pH value of 8.5 to 13; and is substantially free of abrasive particles.

摘要翻译： 本发明提供了一种抛光液组合物，其可以有效地抛光半导体硅晶片的表面或包含待形成硅晶片的表面，其中硅晶片的显微减少量用作研磨剂，或抛光 流体组合物，其特别可用于在两步抛光方法中除去氧化物层之后的抛光步骤。 前述抛光液组合物含有含有水溶性硅酸成分，胶体二氧化硅和碱性成分的碱性悬浮液，其pH值为8.5〜13。另外，后者的研磨液组合物含有碱溶液，其含有 水溶性硅酸成分和碱性成分，pH值为8.5〜13， 并且基本上不含磨料颗粒。

公开(公告)号：US08576291B2

公开(公告)日：2013-11-05

申请号：US13454655

申请日：2012-04-24

申请人： Yasutaka Tanimura ,  Takeshi Aoi ,  Yoshihiro Hara ,  Natsuko Shiota

发明人： Yasutaka Tanimura ,  Takeshi Aoi ,  Yoshihiro Hara ,  Natsuko Shiota

IPC分类号： H04N5/228 ,  H04N5/232

CPC分类号： G03B3/10 ,  F03G7/065

摘要： To provide a drive unit and a drive module which include a shape memory alloy as a drive source to move a driven member and are capable of the high-precision movement of the driven member to a reference position. A drive unit and a drive module can be provided by controlling, in the drive unit and the drive module which include the shape memory alloy as the drive source to move the driven member, the shape memory alloy so that the resistance of the shape memory alloy is equal to the resistance when the driven member is located at the reference position.

摘要翻译： 提供一种驱动单元和驱动模块，其包括形状记忆合金作为驱动源以移动从动构件并且能够将从动构件的高精度移动到参考位置。 可以通过在包括形状记忆合金作为驱动源的驱动单元和驱动模块中控制驱动单元和驱动模块来移动被动构件，形状记忆合金，使得形状记忆合金的电阻 等于从动构件位于参考位置时的阻力。

公开(公告)号：US08466755B2

公开(公告)日：2013-06-18

申请号：US13142489

申请日：2009-11-20

申请人： Yoshihiro Hara

发明人： Yoshihiro Hara

IPC分类号： H03C3/38

CPC分类号： H03F1/0222 ,  H03F3/24

摘要： Provided is a Polar modulation apparatus which compensates for output characteristics of a power amplifier. A data generator generates an amplitude component signal and a phase component signal. A phase modulator generates a phase modulated signal obtained by phase modulating the phase component signal. An adder adds an amplitude offset voltage to the amplitude component signal. A power amplifier which includes a first hetero-junction bipolar transistor, amplifies the phase modulated signal by using the amplitude component signal. A monitor unit monitors the power amplifier and outputs a monitor voltage. The control unit calculates the amplitude offset voltage according to the monitor voltage and outputs the calculated amplitude offset voltage to the adder. The monitor unit includes a second hetero-junction bipolar transistor and outputs a collector emitter voltage of the second hetero-junction bipolar transistor as the monitor voltage.

摘要翻译： 提供了一种用于补偿功率放大器的输出特性的极性调制装置。 数据发生器产生幅度分量信号和相位分量信号。 相位调制器产生通过相位调制相位分量信号获得的相位调制信号。 加法器将振幅偏移电压加到幅度分量信号上。 包括第一异质结双极晶体管的功率放大器通过使用振幅分量信号来放大相位调制信号。 监视器单元监视功率放大器并输出监视器电压。 控制单元根据监视电压来计算幅度偏移电压，并将计算的振幅偏移电压输出到加法器。 监视器单元包括第二异质结双极晶体管，并输出第二异质结双极晶体管的集电极发射极电压作为监视电压。

公开(公告)号：US08351141B2

公开(公告)日：2013-01-08

申请号：US12863928

申请日：2009-01-22

申请人： Yasutaka Tanimura ,  Yasuhiro Honda ,  Natsuko Shiota ,  Yoshihiro Hara

发明人： Yasutaka Tanimura ,  Yasuhiro Honda ,  Natsuko Shiota ,  Yoshihiro Hara

IPC分类号： G02B7/02 ,  G02B15/14

CPC分类号： F03G7/065 ,  G02B7/028 ,  G02B7/08

摘要： A drive device includes a setting unit 12 for setting a control value using a control value-displacement characteristic at a predetermined reference temperature showing a relationship between a control value used to position a movable unit 5 and a displacement of the movable unit 5; a drive unit 20 for supplying drive power corresponding to the control value set by the setting unit 12 to a shape-memory alloy 1 and causing the shape-memory alloy 1 to expand or contract, thereby positioning the movable unit 5; and a correction unit 13 for correcting the control value so as to correct a position shift of the movable unit 5 from a target position resulting from a difference between a control value-displacement characteristic at an ambient temperature and a control value-displacement characteristic at the reference temperature based on the ambient temperature detected by a temperature detection unit 11.

摘要翻译： 驱动装置包括设置单元12，用于使用表示用于定位可移动单元5的控制值与可移动单元5的位移之间的关系的预定参考温度下的控制值 - 位移特性来设定控制值; 驱动单元20，用于将对应于由设置单元12设置的控制值的驱动力提供给形状记忆合金1，并使形状记忆合金1膨胀或收缩，从而定位可移动单元5; 以及校正单元13，用于校正控制值，以便根据环境温度下的控制值 - 位移特性与控制值 - 位移特性之间的差异来校正可移动单元5从目标位置的位置偏移 基于由温度检测单元11检测到的环境温度的基准温度。

公开(公告)号：US07664202B2

公开(公告)日：2010-02-16

申请号：US11547354

申请日：2006-02-02

申请人： Yoshihiro Hara ,  Toru Matsuura

发明人： Yoshihiro Hara ,  Toru Matsuura

IPC分类号： H04L25/49

CPC分类号： H03F3/24 ,  H03F1/02 ,  H03F1/0205 ,  H03F1/0227 ,  H03F3/72 ,  H03F2200/324 ,  H03F2200/451

摘要： In a first mode in which the power level of a transmission output signal (S6) is to be high, an output from the multiplier (2) is input to an amplitude modulation signal amplifier (4), and a radio frequency power amplifier (5) performs amplitude modulation on a radio frequency phase modulated signal (S4) using a nonlinear area with a supply voltage from the amplitude modulation signal amplifier (4). In a second mode in which the power level of a transmission output signal (S6) is to be low, the output from the multiplier (2) is input to a variable gain amplifier (7), and the variable gain amplifier (7) performs amplitude modulation on the radio frequency phase modulated signal (S4). The amplitude modulated signal is output without passing through the radio frequency power amplifier (5).

摘要翻译： 在发送输出信号（S6）的功率电平为高的第一模式中，来自乘法器（2）的输出被输入到幅度调制信号放大器（4），射频功率放大器（5） ）使用具有来自幅度调制信号放大器（4）的电源电压的非线性区域对射频相位调制信号（S4）进行幅度调制。 在发送输出信号（S6）的功率电平为低的第二模式中，来自乘法器（2）的输出被输入到可变增益放大器（7），并且可变增益放大器（7）执行 对射频相位调制信号进行幅度调制（S4）。 输出幅度调制信号而不通过射频功率放大器（5）。

公开(公告)号：US20080205868A1

公开(公告)日：2008-08-28

申请号：US12034079

申请日：2008-02-20

申请人： Yasutaka TANIMURA ,  Akira Kosaka ,  Natsuki Yamamoto ,  Masataka Hamada ,  Yoshihiro Hara

发明人： Yasutaka TANIMURA ,  Akira Kosaka ,  Natsuki Yamamoto ,  Masataka Hamada ,  Yoshihiro Hara

IPC分类号： G03B17/00 ,  H02N1/00

CPC分类号： G03B3/10 ,  G02B7/08 ,  H02N1/008

摘要： An object of the preset invention is to provide a technique capable of preventing occurrence of an assembly error. A driving apparatus for driving an object includes: a driving part having a stationary part and a moving part; and a displacement transmitting part for transmitting a displacement to the object in accordance with a drive displacement of the moving part. The displacement transmitting part and the moving part coupled to the displacement transmitting part are integrally molded.

摘要翻译： 本发明的目的是提供一种能够防止组装错误发生的技术。 用于驱动物体的驱动装置包括：具有静止部分和运动部分的驱动部分; 以及根据所述移动部件的驱动位移将位移传递到所述物体的位移传递部。 联接到位移传递部的位移传递部和移动部一体地成型。