NON-LITHOGRAPHIC METHOD OF PATTERNING CONTACTS FOR A PHOTOVOLTAIC DEVICE
    51.
    发明申请
    NON-LITHOGRAPHIC METHOD OF PATTERNING CONTACTS FOR A PHOTOVOLTAIC DEVICE 有权
    对光伏器件进行连接的非光刻方法

    公开(公告)号:US20120322200A1

    公开(公告)日:2012-12-20

    申请号:US13162712

    申请日:2011-06-17

    IPC分类号: H01L31/18

    摘要: A dielectric material layer is formed on a front surface of a photovoltaic device. A patterned PMMA-type-material-including layer is formed on the dielectric material layer, and the pattern is transferred into the top portion of the photovoltaic device to form trenches in which contact structures can be formed. In one embodiment, a blanket PMMA-type-material-including layer is deposited on the dielectric material layer, and is patterned by laser ablation that removes ablated portions of PMMA-type-material. The PMMA-type-material-including layer may also include a dye to enhance absorption of the laser beam. In another embodiment, a blanket PMMA-type-material-including layer may be deposited on the dielectric material layer and mechanically patterned to form channels therein. In yet another embodiment, a patterned PMMA-type-material-including layer is stamped on top of the dielectric material layer.

    摘要翻译: 介电材料层形成在光电器件的前表面上。 在介电材料层上形成图案化的含PMMA型材料的层,并且将图案转移到光伏器件的顶部以形成可形成接触结构的沟槽。 在一个实施例中,将包覆的PMMA型材料层沉积在电介质材料层上,并通过激光烧蚀来图案化,其消除了PMMA型材料的烧蚀部分。 含PMMA型材料的层还可以包括染料以增强激光束的吸收。 在另一个实施例中,包覆的PMMA型材料层可以沉积在电介质材料层上并机械地图案化以在其中形成通道。 在另一个实施例中,将包含图案的含PMMA型材料的层压印在介电材料层的顶部上。

    Doped graphene films with reduced sheet resistance
    52.
    发明授权
    Doped graphene films with reduced sheet resistance 有权
    具有降低薄层电阻的掺杂石墨烯薄膜

    公开(公告)号:US08293607B2

    公开(公告)日:2012-10-23

    申请号:US12859426

    申请日:2010-08-19

    IPC分类号: H01L21/336

    摘要: Techniques for increasing conductivity of graphene films by chemical doping are provided. In one aspect, a method for increasing conductivity of a graphene film includes the following steps. The graphene film is formed from one or more graphene sheets. The graphene sheets are exposed to a solution having a one-electron oxidant configured to dope the graphene sheets to increase a conductivity thereof, thereby increasing the overall conductivity of the film. The graphene film can be formed prior to the graphene sheets being exposed to the one-electron oxidant solution. Alternatively, the graphene sheets can be exposed to the one-electron oxidant solution prior to the graphene film being formed. A method of fabricating a transparent electrode on a photovoltaic device from a graphene film is also provided.

    摘要翻译: 提供了通过化学掺杂增加石墨烯膜的导电性的技术。 一方面,提高石墨烯膜的导电性的方法包括以下步骤。 石墨烯膜由一个或多个石墨烯片形成。 将石墨烯片暴露于具有被配置为掺杂石墨烯片的单电子氧化物的溶液以增加其导电性,从而增加膜的总导电性。 在石墨烯片暴露于单电子氧化剂溶液之前,可以形成石墨烯膜。 或者,石墨烯片可以在形成石墨烯膜之前暴露于单电子氧化剂溶液。 还提供了一种从石墨烯膜制造光电器件上的透明电极的方法。

    Spin-on formulation and method for stripping an ion implanted photoresist
    53.
    发明授权
    Spin-on formulation and method for stripping an ion implanted photoresist 有权
    用于剥离离子注入光刻胶的自旋配方和方法

    公开(公告)号:US08252673B2

    公开(公告)日:2012-08-28

    申请号:US12643454

    申请日:2009-12-21

    IPC分类号: H01L21/425

    CPC分类号: H01L21/311 G03F7/40 G03F7/423

    摘要: A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.

    摘要翻译: 提供了一种可用于汽提离子注入光刻胶的旋涂配方,其包括含有至少一个酸性官能团的水溶性聚合物的水溶液和至少一种含镧系金属的氧化剂。 将旋涂制剂施加到离子注入的光致抗蚀剂上并烘烤以形成改性的光致抗蚀剂。 改性光致抗蚀剂可溶于含水,酸或有机溶剂。 因此,上述溶剂之一可以用于完全剥离离子注入的光致抗蚀剂以及可能存在的任何光致抗蚀剂残余物。 冲洗步骤可以跟随改性光致抗蚀剂的剥离。

    Doped Graphene Films With Reduced Sheet Resistance
    54.
    发明申请
    Doped Graphene Films With Reduced Sheet Resistance 有权
    具有降低薄片电阻的掺杂石墨烯薄膜

    公开(公告)号:US20120045865A1

    公开(公告)日:2012-02-23

    申请号:US12859426

    申请日:2010-08-19

    IPC分类号: H01L31/18 B44C1/16 H01B1/04

    摘要: Techniques for increasing conductivity of graphene films by chemical doping are provided. In one aspect, a method for increasing conductivity of a graphene film includes the following steps. The graphene film is formed from one or more graphene sheets. The graphene sheets are exposed to a solution having a one-electron oxidant configured to dope the graphene sheets to increase a conductivity thereof, thereby increasing the overall conductivity of the film. The graphene film can be formed prior to the graphene sheets being exposed to the one-electron oxidant solution. Alternatively, the graphene sheets can be exposed to the one-electron oxidant solution prior to the graphene film being formed. A method of fabricating a transparent electrode on a photovoltaic device from a graphene film is also provided.

    摘要翻译: 提供了通过化学掺杂增加石墨烯膜的导电性的技术。 一方面,提高石墨烯膜的导电性的方法包括以下步骤。 石墨烯膜由一个或多个石墨烯片形成。 将石墨烯片暴露于具有被配置为掺杂石墨烯片的单电子氧化物的溶液以增加其导电性,从而增加膜的总导电性。 在石墨烯片暴露于单电子氧化剂溶液之前,可以形成石墨烯膜。 或者,石墨烯片可以在形成石墨烯膜之前暴露于单电子氧化剂溶液。 还提供了一种从石墨烯膜制造光电器件上的透明电极的方法。

    DOPING OF SEMICONDUCTOR SUBSTRATE THROUGH CARBONLESS PHOSPHOROUS-CONTAINING LAYER
    56.
    发明申请
    DOPING OF SEMICONDUCTOR SUBSTRATE THROUGH CARBONLESS PHOSPHOROUS-CONTAINING LAYER 有权
    通过无碳磷酸盐层对二氧化硅基底进行掺杂

    公开(公告)号:US20110223751A1

    公开(公告)日:2011-09-15

    申请号:US12721727

    申请日:2010-03-11

    IPC分类号: H01L21/225 B05C3/02

    CPC分类号: H01L21/225 H01L21/2254

    摘要: A method and system are disclosed for doping a semiconductor substrate. In one embodiment, the method comprises forming a carbon free layer of phosphoric acid on a semiconductor substrate, and diffusing phosphorous from the layer of phosphoric acid in the substrate to form an activated phosphorous dopant therein. In an embodiment, the semiconductor substrate is immersed in a solution of a phosphorous compound to form a layer of the phosphorous compound on the substrate, and this layer of phosphorous is processed to form the layer of phosphoric acid. In an embodiment, this processing may include hydrolyzing the layer of the phosphorous compound to form the layer of phosphoric acid. In one embodiment, an oxide cap layer is formed on the phosphoric acid layer to form a capped substrate. The capped substrate may be annealed to diffuse the phosphorous in the substrate and to form the activated dopant.

    摘要翻译: 公开了用于掺杂半导体衬底的方法和系统。 在一个实施方案中,该方法包括在半导体衬底上形成无磷的磷酸层,并且从磷酸层中扩散磷在衬底中以在其中形成活化的磷掺杂剂。 在一个实施例中,将半导体衬底浸入磷化合物的溶液中以在衬底上形成磷化合物层,并且将该层磷加工形成磷酸层。 在一个实施方案中,该处理可以包括水解磷化合物的层以形成磷酸层。 在一个实施例中,在磷酸层上形成氧化物覆盖层以形成封盖的基底。 封装的衬底可以退火以在衬底中扩散磷并形成活化的掺杂剂。

    PHOTOSENSITIVE SELF-ASSEMBLED MONOLAYER FOR SELECTIVE PLACEMENT OF HYDROPHILIC STRUCTURES
    57.
    发明申请
    PHOTOSENSITIVE SELF-ASSEMBLED MONOLAYER FOR SELECTIVE PLACEMENT OF HYDROPHILIC STRUCTURES 有权
    用于选择性放置水文结构的感光自组装单声道

    公开(公告)号:US20110165428A1

    公开(公告)日:2011-07-07

    申请号:US13047120

    申请日:2011-03-14

    IPC分类号: B32B15/04

    摘要: A photosensitive monolayer is self-assembled on an oxide surface. The chemical compound of the photosensitive monolayer has three components. A first end group provides covalent bonds with the oxide surface for self assembly on the oxide surface. A photosensitive group that dissociates upon exposure to ultraviolet radiation is linked to the first end group. A second end group linked to the photosensitive group provides hydrophobicity. Upon exposure to the ultraviolet radiation, the dissociated photosensitive group is cleaved and forms a hydrophilic derivative in the exposed region, rendering the exposed region hydrophilic. Carbon nanotubes or nanocrystals applied in an aqueous dispersion are selectively attracted to the hydrophilic exposed region to from electrostatic bonding with the hydrophilic surface of the cleaved photosensitive group.

    摘要翻译: 感光单层在氧化物表面上自组装。 感光单层的化合物具有三个成分。 第一端基与氧化物表面提供共价键,用于在氧化物表面上自组装。 在暴露于紫外线辐射下解离的感光基团与第一末端基团连接。 与光敏基团连接的第二端基提供疏水性。 在暴露于紫外线照射下,解离的感光基团被切割并在曝光区域中形成亲水性衍生物,使曝光区域亲水。 施加在水性分散体中的碳纳米管或纳米晶体被选择性地吸附到亲水性暴露区域以与被切割的光敏基团的亲水表面静电结合。

    SPIN-ON FORMULATION AND METHOD FOR STRIPPING AN ION IMPLANTED PHOTORESIST
    58.
    发明申请
    SPIN-ON FORMULATION AND METHOD FOR STRIPPING AN ION IMPLANTED PHOTORESIST 有权
    用于剥离离子印刷光栅的旋转配方和方法

    公开(公告)号:US20110151653A1

    公开(公告)日:2011-06-23

    申请号:US12643454

    申请日:2009-12-21

    CPC分类号: H01L21/311 G03F7/40 G03F7/423

    摘要: A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.

    摘要翻译: 提供了一种可用于汽提离子注入光刻胶的旋涂配方,其包括含有至少一个酸性官能团的水溶性聚合物的水溶液和至少一种含镧系金属的氧化剂。 将旋涂制剂施加到离子注入的光致抗蚀剂上并烘烤以形成改性的光致抗蚀剂。 改性光致抗蚀剂可溶于含水,酸或有机溶剂。 因此,上述溶剂之一可以用于完全剥离离子注入的光致抗蚀剂以及可能存在的任何光致抗蚀剂残余物。 冲洗步骤可以跟随改性光致抗蚀剂的剥离。

    Selective placement of carbon nanotubes on oxide surfaces
    59.
    发明授权
    Selective placement of carbon nanotubes on oxide surfaces 有权
    碳纳米管在氧化物表面的选择性放置

    公开(公告)号:US07951424B2

    公开(公告)日:2011-05-31

    申请号:US12122981

    申请日:2008-05-19

    IPC分类号: B05D5/00

    CPC分类号: B82Y30/00 B05D1/283 B82Y40/00

    摘要: The present invention provides a method for the selective placement of carbon nanotubes on a particular surface. In particular, the present invention provides a method in which self-assembled monolayers formed on an unpatterned or patterned metal oxide surface are used to attract or repel carbon nanotubes from a dispersion containing the same. In accordance with the present invention, the carbon nanotubes can be attracted to the self-assembled monolayers so as to be attached to the metal oxide surface, or they can be repelled by the self-assembled monolayers bonding to a predetermined surface other than the metal oxide surface containing the self-assembled monolayers.

    摘要翻译: 本发明提供了一种在特定表面上选择性地放置碳纳米管的方法。 特别地,本发明提供了一种方法,其中形成在未图案化或图案化的金属氧化物表面上的自组装单层被用于从含有该碳纳米管的分散体吸引或排斥碳纳米管。 根据本发明,碳纳米管可以被吸引到自组装单层上以便附着到金属氧化物表面,或者它们可以被结合到除了金属之外的预定表面的自组装单层排斥 含有自组装单层的氧化物表面。

    Semiconductor nanowire electromagnetic radiation sensor
    60.
    发明授权
    Semiconductor nanowire electromagnetic radiation sensor 有权
    半导体纳米线电磁辐射传感器

    公开(公告)号:US07940381B2

    公开(公告)日:2011-05-10

    申请号:US12324151

    申请日:2008-11-26

    IPC分类号: H01L31/0352

    摘要: A semiconductor nanowire is coated with a chemical coating layer that selectively attaches to the semiconductor material and which forms a dye in a chemical reaction. The dye layer comprises a material that absorbs electromagnetic radiation. A portion of the absorbed energy induces electronic excitation in the chemical coating layer from which additional free charge carriers are temporarily donated into the semiconductor nanowire. Thus, the conductivity of the semiconductor nanowire increases upon illumination on the dye layer. The semiconductor nanowire, and the resulting dye layer collective operate as a detector for electromagnetic radiation.

    摘要翻译: 半导体纳米线涂有选择性地附着于半导体材料并在化学反应中形成染料的化学涂层。 染料层包括吸收电磁辐射的材料。 吸收的能量的一部分在化学涂层中引起电子激发,其中额外的自由电荷载体暂时捐赠到半导体纳米线中。 因此,在染料层上照射时,半导体纳米线的导电性增加。 半导体纳米线和所得到的染料层集合起来用作电磁辐射的检测器。