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67 条记录 (耗时 0.03 秒)

    Film formation apparatus and method of using the same
    56.
    发明授权
    Film formation apparatus and method of using the same 有权
    成膜装置及其使用方法

    公开(公告)号：US07604010B2

    公开(公告)日：2009-10-20

    申请号：US11209741

    申请日：2005-08-24

    申请人： Kazuhide Hasebe ,  Nobutake Nodera ,  Atsushi Endo ,  Makoto Umeki ,  Katsumi Nishimura ,  Masakazu Minami ,  Makoto Yoshida

    发明人： Kazuhide Hasebe ,  Nobutake Nodera ,  Atsushi Endo ,  Makoto Umeki ,  Katsumi Nishimura ,  Masakazu Minami ,  Makoto Yoshida

    IPC分类号： H01L21/00

    CPC分类号： C23C16/4405 ,  C23C16/4412 ,  Y02C20/30 ,  Y02P70/605

    摘要： A film formation apparatus for a semiconductor process includes a cleaning gas supply circuit, a concentration measuring section, and an information processor. The cleaning gas supply circuit is configured to supply a cleaning gas into a reaction chamber to perform cleaning of removing from an inner surface of the reaction chamber a by-product film derived from a film formation gas. The concentration measuring section is disposed in an exhaust system to monitor concentration of a predetermined component contained in exhaust gas from the reaction chamber. The information processor is configured to compare a measurement value obtained by the concentration measuring section with a preset value and to thereby determine an end point of the cleaning.

    摘要翻译： 用于半导体工艺的成膜装置包括清洁气体供应电路，浓度测量部分和信息处理器。 清洗气体供给回路构成为向反应室供给清洗气体，进行从反应室的内表面除去来自成膜气体的副产物膜的清洗。 集中测定部设置在排气系统中，以监测来自反应室的废气中所含有的预定成分的浓度。 信息处理器被配置为将由浓度测量部获得的测量值与预设值进行比较，从而确定清洁的终点。

    Semiconductor processing apparatus and method
    57.
    发明授权
    Semiconductor processing apparatus and method 有权
    半导体处理装置及方法

    公开(公告)号：US07559992B2

    公开(公告)日：2009-07-14

    申请号：US11305201

    申请日：2005-12-19

    申请人： Daisuke Suzuki ,  Masayuki Hasegawa ,  Atsushi Endo

    发明人： Daisuke Suzuki ,  Masayuki Hasegawa ,  Atsushi Endo

    IPC分类号： C23C16/00 ,  C25F1/00 ,  C25F3/30 ,  C25F5/00

    CPC分类号： H01L21/67017

    摘要： A semiconductor processing apparatus includes a process chamber to accommodate a target substrate, a gas supply system to supply a process gas into the process chamber, an exhaust unit to exhaust the process chamber, and an exhaust line connecting the process chamber to the exhaust unit. An opening variable valve is disposed on the exhaust line, and an inactive gas line is connected to the exhaust line on an upstream side of the opening variable valve to introduce an inactive gas. A pressure control mechanism is configured to control a pressure in the process chamber by adjusting at least one of an opening ratio of the opening variable valve and a flow rate of the inactive gas during a process in the process chamber while causing the exhaust unit to exhaust the process chamber and introducing the inactive gas from the inactive gas line into the exhaust line.

    摘要翻译： 半导体处理装置包括容纳目标基板的处理室，向处理室供给处理气体的气体供给系统，排出处理室的排气单元和将处理室连接到排气单元的排气管路。 在排气管上设置有可开启的可变阀，在该可开启的可变阀的上游侧与排气管连接有惰性气体导入惰性气体。 压力控制机构被配置为通过在使排气单元排气的同时调节处理室中的过程期间开启可变阀的开启比率和惰性气体的流量中的至少一个来控​​制处理室中的压力 处理室并将惰性气体从惰性气体管线引入排气管线。

    Magnetic recording medium and magnetic storage unit
    59.
    发明申请
    Magnetic recording medium and magnetic storage unit 审中-公开
    磁记录介质和磁存储单元

    公开(公告)号：US20070275269A1

    公开(公告)日：2007-11-29

    申请号：US11583283

    申请日：2006-10-19

    申请人： Hideaki Takahoshi ,  Atsushi Endo ,  Reiko Murao ,  Shinya Sato ,  Akira Kikuchi

    发明人： Hideaki Takahoshi ,  Atsushi Endo ,  Reiko Murao ,  Shinya Sato ,  Akira Kikuchi

    IPC分类号： G11B5/66

    CPC分类号： G11B5/7325 ,  G11B5/66 ,  G11B5/7379

    摘要： A magnetic recording medium is disclosed that includes a substrate; and an underlayer, a first magnetic layer, a non-magnetic coupling layer, a second magnetic layer, a third magnetic layer, a non-magnetic separation layer, and a fourth magnetic layer stacked in this order on the substrate. The first magnetic layer and the second magnetic layer are antiferromagnetically exchange-coupled, and the second magnetic layer and the third magnetic layer are ferromagnetically exchange-coupled. The third magnetic layer has an anisotropic magnetic field smaller than the anisotropic magnetic field of the second magnetic layer, and has a saturation magnetization greater than the saturation magnetization of the second magnetic layer.

    摘要翻译： 公开了一种包括基板的磁记录介质; 以及在基板上依次层叠的底层，第一磁性层，非磁性耦合层，第二磁性层，第三磁性层，非磁性分离层和第四磁性层。 第一磁性层和第二磁性层是反铁磁交换耦合的，第二磁性层和第三磁性层是铁磁交换耦合的。 第三磁性层具有比第二磁性层的各向异性磁场小的各向异性磁场，并且具有大于第二磁性层的饱和磁化强度的饱和磁化强度。

    Semiconductor processing apparatus and method
    60.
    发明申请
    Semiconductor processing apparatus and method 有权

    公开(公告)号：US20060134811A1

    公开(公告)日：2006-06-22

    申请号：US11305201

    申请日：2005-12-19

    申请人： Daisuke Suzuki ,  Masayuki Hasegawa ,  Atsushi Endo

    发明人： Daisuke Suzuki ,  Masayuki Hasegawa ,  Atsushi Endo

    IPC分类号： H01L21/00

    CPC分类号： H01L21/67017

    摘要： A semiconductor processing apparatus includes a process chamber to accommodate a target substrate, a gas supply system to supply a process gas into the process chamber, an exhaust unit to exhaust the process chamber, and an exhaust line connecting the process chamber to the exhaust unit. An opening variable valve is disposed on the exhaust line, and an inactive gas line is connected to the exhaust line on an upstream side of the opening variable valve to introduce an inactive gas. A pressure control mechanism is configured to control a pressure in the process chamber by adjusting at least one of an opening ratio of the opening variable valve and a flow rate of the inactive gas during a process in the process chamber while causing the exhaust unit to exhaust the process chamber and introducing the inactive gas from the inactive gas line into the exhaust line.