Array Substrate and Manufacturing Method Thereof, and Display Device

    公开(公告)号:US20240168348A1

    公开(公告)日:2024-05-23

    申请号:US18425819

    申请日:2024-01-29

    IPC分类号: G02F1/1362

    摘要: Provided are an array substrate and a manufacturing method thereof, and a display device. The array substrate includes a plurality of data lines and sub-pixels. At least one sub-pixel includes: a first insulating layer; a gate; an active layer located on one side of the first insulating layer away from the gate; a pixel electrode; a first electrode located connected to the active layer and in contact with the pixel electrode; a second electrode connected to the active layer and a data line; a second insulating layer having a first opening, wherein the orthographic projection of the first opening partially overlaps with the orthographic projections of the pixel electrode and the first electrode; a connection electrode in contact with the pixel electrode and the first electrode through the first opening; and a common electrode located on one side of the second insulating layer away from the pixel electrode.

    Display device and wireless signal receiving terminal

    公开(公告)号:US11631941B2

    公开(公告)日:2023-04-18

    申请号:US17409145

    申请日:2021-08-23

    摘要: A display device is provided. The display device includes a display module and an antenna module. The antenna module includes at least one antenna body for receiving a wireless signal; a signal transmission line coupled to the at least one antenna body; an antenna carrier plate having a working region and a bending region, the antenna carrier plate in the bending region is bent from a display surface to a non-display surface, so that the signal transmission line extends from the display surface to the non-display surface; an adapter circuit board on the non-display surface; and an adapter coupling the signal transmission line to the adapter circuit board to enable the adapter circuit board to be signal coupled to the at least one antenna body.

    Array Substrate and Manufacturing Method Thereof, and Display Device

    公开(公告)号:US20230041639A1

    公开(公告)日:2023-02-09

    申请号:US17792264

    申请日:2021-09-01

    IPC分类号: G02F1/1362

    摘要: Provided are an array substrate and a manufacturing method thereof, and a display device. The array substrate comprises a plurality of data lines and sub-pixels. At least one sub-pixel comprises: a first insulating layer; a gate; an active layer located on one side of the first insulating layer away from the gate; a pixel electrode; a first electrode located connected to the active layer and in contact with the pixel electrode; a second electrode connected to the active layer and a data line; a second insulating layer having a first opening, wherein the orthographic projection of the first opening partially overlaps with the orthographic projections of the pixel electrode and the first electrode; a connection electrode in contact with the pixel electrode and the first electrode through the first opening; and a common electrode located on one side of the second insulating layer away from the pixel electrode.

    Thin Film Transistor and Manufacturing Method Thereof, and Array Substrate and Electronic Device

    公开(公告)号:US20230015871A1

    公开(公告)日:2023-01-19

    申请号:US17780877

    申请日:2021-05-27

    IPC分类号: H01L29/786 H01L27/12

    摘要: A thin film transistor, a manufacturing method thereof, an array substrate and an electronic device arc provided. The thin film transistor includes an active layer including multiple oxide layers which includes a channel layer, a transition layer and a first barrier layer, the channel layer is an layer with a highest carrier mobility, the channel layer is a crystalline or amorphous oxide layer, the transition layer is in direct contact with the channel layer, the first barrier layer is an outermost oxide layer, the first barrier layer and the transition layer are both crystalline oxide layers; a crystallization degree of the first barrier layer and a crystallization degree of the transition layer are greater than a crystallization degree of the channel layer, and a band gap of the first barrier layer and a band gap of the transition layer are larger than a band gap of the channel layer.