公开(公告)号：US06812076B1

公开(公告)日：2004-11-02

申请号：US10752691

申请日：2004-01-08

Applicant: Krishnashree Achuthan ,  Shibly S. Ahmed ,  Haihong Wang ,  Bin Yu

Inventor： Krishnashree Achuthan ,  Shibly S. Ahmed ,  Haihong Wang ,  Bin Yu

IPC: H01L2972

CPC classification number: H01L29/785 ,  H01L21/3212 ,  H01L29/4908 ,  H01L29/66795 ,  H01L29/6681

Abstract: A FinFet-type semiconductor device includes a fin structure on which a relatively thin amorphous silicon layer and then an undoped polysilicon layer is formed. The semiconductor device may be planarized using a chemical mechanical polishing (CMP) in which the amorphous silicon layer acts as a stop layer to prevent damage to the fin structure.

Abstract translation: FinFet型半导体器件包括翅片结构，其上形成相对薄的非晶硅层，然后形成未掺杂的多晶硅层。 半导体器件可以使用化学机械抛光（CMP）进行平面化，其中非晶硅层用作阻挡层以防止损坏鳍结构。

公开(公告)号：US06803631B2

公开(公告)日：2004-10-12

申请号：US10349042

申请日：2003-01-23

Applicant: Srikanteswara Dakshina-Murthy ,  Judy Xilin An ,  Zoran Krivokapic ,  Haihong Wang ,  Bin Yu

Inventor： Srikanteswara Dakshina-Murthy ,  Judy Xilin An ,  Zoran Krivokapic ,  Haihong Wang ,  Bin Yu

IPC: H01L2701

CPC classification number: H01L29/785 ,  H01L29/1054 ,  H01L29/4908 ,  H01L29/66795 ,  H01L29/78654 ,  H01L29/78687

Abstract: A semiconductor structure includes a fin and a layer formed on the fin. The fin includes a first crystalline material having a rectangular cross section and a number of surfaces. The layer is formed on the surfaces and includes a second crystalline material. The first crystalline material has a different lattice constant than the second crystalline material to induce tensile strain within the first layer.

Abstract translation: 半导体结构包括翅片和形成在翅片上的层。 翅片包括具有矩形横截面和多个表面的第一结晶材料。 该层形成在表面上并且包括第二结晶材料。 第一结晶材料具有与第二结晶材料不同的晶格常数，以在第一层内引起拉伸应变。

公开(公告)号：US06787854B1

公开(公告)日：2004-09-07

申请号：US10385753

申请日：2003-03-12

Applicant: Chih-Yuh Yang ,  Shibly S. Ahmed ,  Srikanteswara Dakshina-Murthy ,  Cyrus E. Tabery ,  Haihong Wang ,  Bin Yu

Inventor： Chih-Yuh Yang ,  Shibly S. Ahmed ,  Srikanteswara Dakshina-Murthy ,  Cyrus E. Tabery ,  Haihong Wang ,  Bin Yu

IPC: H01L218238

CPC classification number: H01L29/7853 ,  H01L29/66818

Abstract: A method for forming a fin structure on a silicon-on-insulator (SOI) wafer that includes a silicon layer on an insulating layer that is formed over a semiconductor substrate includes etching the silicon layer using a first etch procedure, etching, following the first etch procedure, the silicon layer using a second etch procedure, and etching, following the second etch procedure, the silicon layer using a third etch procedure to form a T-shaped fin structure.

Abstract translation: 一种在绝缘体上硅（SOI）晶片上形成翅片结构的方法，包括在半导体衬底上形成的绝缘层上的硅层，包括使用第一蚀刻步骤蚀刻硅层，然后蚀刻第一 蚀刻步骤，使用第二蚀刻步骤的硅层，以及在第二蚀刻程序之后，使用第三蚀刻工艺蚀刻硅层以形成T形翅片结构。

公开(公告)号：US06762448B1

公开(公告)日：2004-07-13

申请号：US10405343

申请日：2003-04-03

Applicant: Ming-Ren Lin ,  Haihong Wang ,  Bin Yu

Inventor： Ming-Ren Lin ,  Haihong Wang ,  Bin Yu

IPC: H01L2708

CPC classification number: H01L29/785 ,  H01L21/823412 ,  H01L21/823437 ,  H01L27/088 ,  H01L29/66795 ,  H01L29/7842

Abstract: A semiconductor device includes a group of fin structures. The group of fin structures includes a conductive material and is formed by growing the conductive material in an opening of an oxide layer. The semiconductor device further includes a source region formed at one end of the group of fin structures, a drain region formed at an opposite end of the group of fin structures, and at least one gate.

Abstract translation: 半导体器件包括一组翅片结构。 翅片结构的组包括导电材料，并且通过在氧化物层的开口中生长导电材料而形成。 半导体器件还包括形成在鳍片结构组的一端处的源极区域，形成在鳍片结构组的相对端处的漏极区域和至少一个栅极。

公开(公告)号：US08222680B2

公开(公告)日：2012-07-17

申请号：US10274961

申请日：2002-10-22

Applicant: Ming-Ren Lin ,  Judy Xilin An ,  Zoran Krivokapic ,  Cyrus E. Tabery ,  Haihong Wang ,  Bin Yu

Inventor： Ming-Ren Lin ,  Judy Xilin An ,  Zoran Krivokapic ,  Cyrus E. Tabery ,  Haihong Wang ,  Bin Yu

IPC: H01L29/72

CPC classification number: H01L29/785 ,  H01L29/42384 ,  H01L29/66795 ,  H01L29/66818

Abstract: A double gate metal-oxide semiconductor field-effect transistor (MOSFET) includes a fin, a first gate and a second gate. The first gate is formed on top of the fin. The second gate surrounds the fin and the first gate. In another implementation, a triple gate MOSFET includes a fin, a first gate, a second gate, and a third gate. The first gate is formed on top of the fin. The second gate is formed adjacent the fin. The third gate is formed adjacent the fin and opposite the second gate.

Abstract translation: 双栅极金属氧化物半导体场效应晶体管（MOSFET）包括鳍状物，第一栅极和第二栅极。 第一个门形成在鳍的顶部。 第二个门围绕翅片和第一个门。 在另一实施方案中，三栅极MOSFET包括鳍片，第一栅极，第二栅极和第三栅极。 第一个门形成在鳍的顶部。 第二个门形成在翅片附近。 第三栅极形成在翅片附近并与第二栅极相对。

公开(公告)号：US07781810B1

公开(公告)日：2010-08-24

申请号：US11538217

申请日：2006-10-03

Applicant: Judy Xilin An ,  Zoran Krivokapic ,  Haihong Wang ,  Bin Yu

Inventor： Judy Xilin An ,  Zoran Krivokapic ,  Haihong Wang ,  Bin Yu

IPC: H01L29/72

CPC classification number: H01L29/7855 ,  H01L21/823821 ,  H01L29/42384 ,  H01L29/7843 ,  H01L29/78684

Abstract: A device includes a fin, a first gate and a second gate. The first gate is formed adjacent a first side of the fin and includes a first layer of material having a first thickness and having an upper surface that is substantially co-planar with an upper surface of the fin. The second gate is formed adjacent a second side of the fin opposite the first side and includes a second layer of material having a second thickness and having an upper surface that is substantially co-planar with the upper surface of the fin, where the first thickness and the second thickness are substantially equal to a height of the fin.

Abstract translation: 一种装置包括鳍片，第一栅极和第二栅极。 第一门形成在鳍片的第一侧附近，并且包括具有第一厚度并且具有与鳍片的上表面基本共面的上表面的第一材料层。 所述第二浇口邻近所述翅片的与所述第一侧相对的第二侧形成，并且包括具有第二厚度并具有与所述翅片的上表面基本共面的上表面的第二材料层，其中所述第一厚度 并且第二厚度基本上等于翅片的高度。

公开(公告)号：US07250645B1

公开(公告)日：2007-07-31

申请号：US10761374

申请日：2004-01-22

Applicant: Haihong Wang ,  Shibly S. Ahmed ,  Ming-Ren Lin ,  Bin Yu

Inventor： Haihong Wang ,  Shibly S. Ahmed ,  Ming-Ren Lin ,  Bin Yu

IPC: H01L29/76 ,  H01L27/08

CPC classification number: H01L29/785 ,  H01L29/42392 ,  H01L29/66795 ,  H01L29/7842

Abstract: A fin field effect transistor (FinFET) includes a reversed T-shaped fin. The FinFET further includes source and drain regions formed adjacent the reversed T-shaped fin. The FinFET further includes a dielectric layer formed adjacent surfaces of the fin and a gate formed adjacent the dielectric layer.

Abstract translation: 翅片场效应晶体管（FinFET）包括反转的T形翅片。 FinFET还包括邻近反转的T形翅片形成的源极和漏极区域。 FinFET还包括邻近散热片表面形成的电介质层和邻近电介质层形成的栅极。

公开(公告)号：US06995438B1

公开(公告)日：2006-02-07

申请号：US10674478

申请日：2003-10-01

Applicant: Shibly S. Ahmed ,  Haihong Wang ,  Bin Yu

Inventor： Shibly S. Ahmed ,  Haihong Wang ,  Bin Yu

IPC: H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC classification number: H01L29/785 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66795

Abstract: A semiconductor device includes a substrate and an insulating layer formed on the substrate. A conductive fin may be formed on the insulating layer. Fully silicided source and drain regions may be formed adjacent to the fin. A metal gate may be formed over a portion of the fin via a damascene process.

Abstract translation: 半导体器件包括衬底和形成在衬底上的绝缘层。 可以在绝缘层上形成导电翅片。 完全硅化的源极和漏极区域可以形成在鳍片附近。 可以通过镶嵌工艺在鳍的一部分上形成金属栅极。

公开(公告)号：US06982464B2

公开(公告)日：2006-01-03

申请号：US10975473

申请日：2004-10-29

Applicant: Krishnashree Achuthan ,  Shibly S. Ahmed ,  Haihong Wang ,  Bin Yu

Inventor： Krishnashree Achuthan ,  Shibly S. Ahmed ,  Haihong Wang ,  Bin Yu

IPC: H01L29/72

CPC classification number: H01L29/785 ,  H01L21/3212 ,  H01L29/4908 ,  H01L29/66795 ,  H01L29/6681

Abstract: A FinFET-type semiconductor device includes a fin structure on which a relatively thin amorphous silicon layer and then an undoped polysilicon layer is formed. The semiconductor device may be planarized using a chemical mechanical polishing (CMP) in which the amorphous silicon layer acts as a stop layer to prevent damage to the fin structure.

Abstract translation: FinFET型半导体器件包括翅片结构，其上形成相对薄的非晶硅层，然后形成未掺杂的多晶硅层。 半导体器件可以使用化学机械抛光（CMP）进行平面化，其中非晶硅层用作阻挡层以防止损坏鳍结构。

公开(公告)号：US06974983B1

公开(公告)日：2005-12-13

申请号：US10768660

申请日：2004-02-02

Applicant: Wiley Eugene Hill ,  Shibly S. Ahmed ,  Haihong Wang ,  Bin Yu

Inventor： Wiley Eugene Hill ,  Shibly S. Ahmed ,  Haihong Wang ,  Bin Yu

IPC: H01L21/336 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L21/062

CPC classification number: H01L29/785 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/66795

Abstract: A semiconductor device includes an N-channel device and a P-channel device. The N-channel device includes a first source region, a first drain region, a first fin structure, and a gate. The P-channel device includes a second source region, a second drain region, a second fin structure, and the gate. The second source region, the second drain region, and the second fin structure are separated from the first source region, the first drain region, and the first fin structure by a channel stop layer.

Abstract translation: 半导体器件包括N沟道器件和P沟道器件。 N沟道器件包括第一源极区，第一漏极区，第一鳍结构和栅极。 P沟道器件包括第二源极区，第二漏极区，第二鳍结构和栅极。 第二源极区域，第二漏极区域和第二鳍状结构通过沟道阻挡层与第一源极区域，第一漏极区域和第一鳍片结构分离。