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公开(公告)号：US20150204041A1
公开(公告)日：2015-07-23
申请号：US14159482
申请日：2014-01-21
申请人： Cheng-Hung Chang
发明人： Cheng-Hung Chang
IPC分类号： E02D1/02 , H04W4/00 , G01N21/00 , G01N33/24 , G01N7/00 , G01N27/02 , G01N33/00 , G01N27/416 , G05B15/02 , G01N25/56
CPC分类号： E02D1/022 , G01N33/004 , G01N33/24 , G01N35/00871 , G05B15/02 , H04W4/70
摘要： A two-tier wireless soil measurement apparatus is disclosed, including a top head and a plurality of sensors, wherein top head being placed above soil surface and the plurality of sensors being scattered under soil; each sensor including a sensor housing, first communication module, sensor unit and power module; the sensor unit sensing a soil condition and generating soil data representing the soil condition, the first communication module transmitting the soil data wirelessly to top head, and the power module providing power for sensor unit and first communication module; the top head including a first communication module, controller, second communication module and power module; the first communication module receiving soil data from first communication modules of sensors, the controller processing soil data, the second communication module transmitting the soil data wirelessly to a data station, and power module providing power to first communication module, controller and second communication module.
摘要翻译： 公开了一种两层无线土壤测量装置，包括顶部头和多个传感器，其中顶部头部放置在土壤表面上方，并且多个传感器在土壤下分散; 每个传感器包括传感器壳体，第一通信模块，传感器单元和功率模块; 传感器单元感测土壤条件并产生表示土壤条件的土壤数据，第一通信模块将土壤数据无线发送到顶部头，功率模块为传感器单元和第一通信模块提供电力; 所述顶部头部包括第一通信模块，控制器，第二通信模块和电源模块; 所述第一通信模块从传感器的第一通信模块接收土壤数据，所述控制器处理土壤数据，所述第二通信模块以无线方式将土壤数据发送到数据站，以及向第一通信模块，控制器和第二通信模块提供功率的功率模块。
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52.发明申请Metal salicide formation having nitride liner to reduce silicide stringer and encroachment 失效具有氮化物衬垫以减少硅化物桁条和侵蚀的金属硅化物形成公开(公告)号：US20080179689A1
公开(公告)日：2008-07-31
申请号：US11669870
申请日：2007-01-31
申请人： Tan-Chen Lee , Chung-Te Lin , Kuang-Hsin Chen , Chi-Hsi Wu , Di-Houng Lee , Cheng-Hung Chang
发明人： Tan-Chen Lee , Chung-Te Lin , Kuang-Hsin Chen , Chi-Hsi Wu , Di-Houng Lee , Cheng-Hung Chang
IPC分类号： H01L29/78 , H01L21/441
CPC分类号： H01L21/28518 , H01L21/76829 , H01L29/665
摘要： Disclosed herein are various embodiments of techniques for preventing silicide stringer or encroachment formation during metal salicide formation in semiconductor devices. The disclosed technique involves depositing a protective layer, such as a nitride or other dielectric layer, over areas of the semiconductor device where metal silicide formation is not desired because such formation detrimentally affects device performance. For example, silicon particles that may remain in device features that are formed through silicon oxidation, such as under the gate sidewall spacers and proximate to the perimeter of shallow trench isolation structures, are protected from reacting with metal deposited to form metal silicide in certain areas of the device. As a result, silicide stringers or encroachment in undesired areas is reduced or eliminated by the protective layer.
摘要翻译： 本文公开了用于在半导体器件中的金属自对准硅化物形成期间防止硅化物纵梁或侵入形成的技术的各种实施例。 所公开的技术包括在不需要金属硅化物形成的半导体器件的区域上沉积诸如氮化物或其它电介质层的保护层，因为这种形成不利地影响器件性能。 例如，可以保留在通过硅氧化形成的器件特征中的硅颗粒，例如在栅极侧壁间隔物附近并且靠近浅沟槽隔离结构的周边，防止在某些区域沉积以形成金属硅化物的金属反应 的设备。 结果，通过保护层减少或消除了硅化物桁条或侵入不期望的区域。
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公开(公告)号：US09411070B2
公开(公告)日：2016-08-09
申请号：US14105799
申请日：2013-12-13
申请人： Cheng-Hung Chang
发明人： Cheng-Hung Chang
CPC分类号： G01V9/00 , A01C21/007 , A01G25/167 , G01N2033/245
摘要： A two-tier wireless soil measurement apparatus is disclosed, including a top head and a plurality of sensors, wherein the top head being placed on or above the ground and the plurality of sensors being buried under the soil for sensing soil conditions, generating soil data representing the sensed soil conditions, and transmitting generated soil conditions to the top head; the plurality of sensors able to be assembled into a pole and each of the plurality of sensors including a sensor unit for sensing a soil condition; a circuit module connected to the sensor unit for transmitting sensed soil condition to the top head, a sensor housing for housing the sensor unit and the circuit module; and an engaging element for engaging two sensors in a head-to-tail manner for form a pole.
摘要翻译： 公开了一种双层无线土壤测量装置，其包括顶部头部和多个传感器，其中顶部头部放置在地面上或上方，并且多个传感器被埋在土壤下以便感测土壤条件，产生土壤数据 代表感测到的土壤条件，并将产生的土壤条件发送到顶部头部; 所述多个传感器能够被组装成一个极，并且所述多个传感器中的每一个包括用于感测土壤条件的传感器单元; 连接到传感器单元的电路模块，用于将感测到的土壤状况传送到顶部头部;传感器壳体，用于容纳传感器单元和电路模块; 以及用于以头对尾方式接合两个传感器以形成杆的接合元件。
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公开(公告)号：US09054194B2
公开(公告)日：2015-06-09
申请号：US12652947
申请日：2010-01-06
IPC分类号： H01L21/336 , H01L29/78 , H01L29/417 , H01L29/66
CPC分类号： H01L29/7856 , H01L29/41791 , H01L29/66803 , H01L29/7839 , H01L29/785 , H01L2029/7858
摘要： Non-planar transistors and methods of fabrication thereof are described. In an embodiment, a method of forming a non-planar transistor includes forming a channel region on a first portion of a semiconductor fin, the semiconductor fin having a top surface and sidewalls. A gate electrode is formed over the channel region of the semiconductor fin, and an in-situ doped semiconductor layer is grown on the top surface and the sidewalls of the semiconductor fin on opposing sides of the gate electrode using a selective epitaxial growth process. At least a part of the doped semiconductor layer is converted to form a dopant rich region.
摘要翻译： 描述了非平面晶体管及其制造方法。 在一个实施例中，形成非平面晶体管的方法包括在半导体鳍片的第一部分上形成沟道区域，所述半导体鳍片具有顶表面和侧壁。 在半导体鳍片的沟道区域上形成栅电极，并且使用选择性外延生长工艺在栅电极的相对侧的半导体翅片的顶表面和侧壁上生长原位掺杂半导体层。 掺杂半导体层的至少一部分被转换以形成掺杂剂浓度区域。
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公开(公告)号：US08063389B2
公开(公告)日：2011-11-22
申请号：US12403191
申请日：2009-03-12
IPC分类号： H01J37/08
CPC分类号： G21F1/12
摘要： A method of performing an ion implantation is provided. A workpiece is installed in the ion implanter. A wafer is provided in a receiving space within an ion implanter. An ion beam is generated by an ion source of the ion implanter. The bombard of the ion beam is blocked and particles generated during or after conducting the step of generating the ion beam are collected by the workpiece.
摘要翻译： 提供了进行离子注入的方法。 工件安装在离子注入机中。 晶片设置在离子注入机内的接收空间中。 离子束由离子注入机的离子源产生。 离子束的轰击被阻挡，并且在进行产生离子束的步骤期间或之后产生的颗粒被工件收集。
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56.发明授权公开(公告)号：US07518130B2
公开(公告)日：2009-04-14
申请号：US11742400
申请日：2007-04-30
IPC分类号： H01J37/317 , H01J37/08
CPC分类号： G21F1/12
摘要： An ion beam blocking component suitable for blocking an ion beam generated by an ion source of an ion implanter is provided. The blocking component includes a front plate, a back plate, and a plurality of side plates. The front plate has at least one opening. The back plate is behind the front plate, and has a plurality of grooves formed on one surface thereof facing the front plate. The side plates are connected between the front plate and the back plate, and a receiving space is formed between these plates.
摘要翻译： 提供了适合于阻挡由离子注入机的离子源产生的离子束的离子束阻挡元件。 阻挡部件包括前板，后板和多个侧板。 前板具有至少一个开口。 背板位于前板的后面，并且在其面向前板的一个表面上形成有多个槽。 侧板连接在前板和后板之间，并且在这些板之间形成容纳空间。
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公开(公告)号：US20070045568A1
公开(公告)日：2007-03-01
申请号：US11161995
申请日：2005-08-25
IPC分类号： H01J37/317 , H01J37/244
CPC分类号： H01J37/3171 , H01J37/045 , H01J2237/022 , H01J2237/24507 , H01J2237/24535
摘要： A method for reducing particles during ion implantation is provided. The method involves the use of an improved Faraday flag including a beam plate having thereon a beam striking zone comprising a recessed trench pattern on which the ion beam scans to and fro. An ion beam selected from the mass analyzer is blocked by the Faraday flag in a closed position between the mass analyzer and the semiconductor wafer. A beam current of the ion beam impinging on the beam striking zone of the beam plate is measured. After the beam current measurement, the Faraday flag is removed such that the ion beam impinges on the semiconductor wafer.
摘要翻译： 提供了离子注入期间减少颗粒的方法。 该方法包括使用改进的法拉第标志，其包括其上具有射束冲击区的梁板，该射束板包括凹陷沟槽图案，离子束在其上来回扫描。 在质量分析器和半导体晶片之间的关闭位置，选自质量分析器的离子束被法拉第标志阻挡。 测量入射在梁板的射束区上的离子束的束流。 在束电流测量之后，去除法拉第标记，使得离子束照射在半导体晶片上。
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公开(公告)号：US07160800B2
公开(公告)日：2007-01-09
申请号：US10905517
申请日：2005-01-07
IPC分类号： H01L21/4763 , H01L23/48
CPC分类号： H01L21/76888 , H01L21/3003 , H01L29/665
摘要： Disclosed herein are various embodiments of semiconductor devices and related methods of manufacturing a semiconductor device. In one embodiment, a method includes providing a semiconductor substrate and forming a metal silicide on the semiconductor substrate. In addition, the method includes treating an exposed surface of the metal silicide with a hydrogen/nitrogen-containing compound to form a treated layer on the exposed surface, where the composition of the treated layer hinders oxidation of the exposed surface. The method may then further include depositing a dielectric layer over the treated layer and the exposed surface of the metal silicide.
摘要翻译： 这里公开了半导体器件的各种实施例和制造半导体器件的相关方法。 在一个实施例中，一种方法包括提供半导体衬底并在半导体衬底上形成金属硅化物。 此外，该方法包括用含氢/氮化合物处理金属硅化物的暴露表面以在暴露表面上形成处理层，其中处理层的组成阻碍了暴露表面的氧化。 该方法可以进一步包括在经处理的层和金属硅化物的暴露表面上沉积介电层。
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59.发明授权公开(公告)号：US06383554B1
公开(公告)日：2002-05-07
申请号：US09654808
申请日：2000-09-05
申请人： Cheng-Hung Chang , Keh-Chyang Leou , Chaung Lin , Yi-Mei Yang , Chuen-Horng Tsai , I. G. Chen
发明人： Cheng-Hung Chang , Keh-Chyang Leou , Chaung Lin , Yi-Mei Yang , Chuen-Horng Tsai , I. G. Chen
IPC分类号： B05D314
CPC分类号： H01J37/32082 , H01J37/3299
摘要： There is provided a process and its system for fabricating plasma with feedback control on plasma density. This process uses a heterodyne millimeter wave interferometer as a sensor to measure the plasma density in the process container and the plasma density that is needed in the plasma fabricating process, and then provides real-time information of the measurements to a digital control device which makes numerical calculations and then drives the RF power generator to change the RF output power so as to enable the plasma density in the plasma fabricating process to be close to the expected plasma density. The conventional operation parameter method is to control air pressure, RF power, gas flow quantity, temperature and so on. However, it does not control the plasma parameter that has the most direct influence on the process. Therefore, this method cannot guarantee that, in the process of fabricating wafers, different batches of wafers will be operated under similar process plasma conditions. The present invention provides a process plasma source that can be directly controlled so as to obtain process plasma source of steady quality.
摘要翻译： 提供了一种用于制造等离子体的方法及其系统，其具有对等离子体密度的反馈控制。 该方法使用外差毫米波干涉仪作为传感器来测量处理容器中的等离子体密度和等离子体制造过程中所需的等离子体密度，然后将测量值的实时信息提供给数字控制装置，该数字控制装置 数值计算，然后驱动射频发射器改变射频输出功率，使等离子体制造过程中的等离子体密度接近于预期的等离子体密度。常规的操作参数方法是控制空气压力，射频功率， 气体流量，温度等。 然而，它不控制对过程有最直接影响的等离子体参数。 因此，该方法不能保证在制造晶片的过程中，不同批次的晶片将在类似的工艺等离子体条件下运行。 本发明提供可直接控制以获得质量稳定的工艺等离子体源的工艺等离子体源。
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