SHEET ALIGNING APPARATUS
    52.
    发明申请
    SHEET ALIGNING APPARATUS 失效
    表格对齐设备

    公开(公告)号:US20090127773A1

    公开(公告)日:2009-05-21

    申请号:US12268803

    申请日:2008-11-11

    IPC分类号: B65H29/00

    摘要: In a sheet aligning apparatus, a pair of sheet aligning members stops at three positions such that when a sheet aligning operation is not conducted, the pair of sheet aligning members is stopped at the first position of an upper level so as not to come in contact with sheets discharged from a discharging section, when the sorting section shifts for sorting, the pair of sheet aligning members is stopped at the second position of a middle level lower than the first position so as not to come in contact with sheets stacked on the tray, and when a sheet aligning operation is conducted, the pair of sheet aligning members is stopped at the third position of a lower level so as to come in contact with the top surface of the tray or the upper surface of the sheets stacked on the tray.

    摘要翻译: 在纸张对齐装置中,一对纸张对齐部件在三个位置停止,使得当不进行纸张对齐操作时,一对纸张对齐部件停在上一级的第一位置,以便不会接触 当从排出部排出的纸张,当分类部分移动以进行分类时,一对纸张对齐部件停在低于第一位置的中间位置的第二位置,以便不与堆叠在纸盘上的纸张接触 ,并且当进行片材对准操作时,一对片材对准部件停止在较低级别的第三位置处以与托盘的顶表面或堆叠在托盘上的片材的上表面接触 。

    DRY ETCHING METHOD OF HIGH-K FILM
    53.
    发明申请
    DRY ETCHING METHOD OF HIGH-K FILM 审中-公开
    高K膜的干蚀刻方法

    公开(公告)号:US20090065479A1

    公开(公告)日:2009-03-12

    申请号:US12016434

    申请日:2008-01-18

    IPC分类号: C23F1/00

    CPC分类号: H01L21/31122

    摘要: An object of the invention is to provide a dry etching method of a metal oxide High-k film having etching characteristics which achieve a small etching rate difference and a small profile difference between open area and dense area while keeping a high selectivity to a polysilicon underlying film. In the method of dry-etching a High-k film by using a plasma, a small amount of fluorocarbon gas having a high carbon ratio is added to a BCl3 gas mixed with a rare gas.

    摘要翻译: 本发明的目的是提供一种具有蚀刻特性的金属氧化物High-k膜的干蚀刻方法,其具有小的蚀刻速率差异以及开放区域和致密区域之间的微小差异,同时保持对多晶硅潜在的高选择性 电影。 在使用等离子体干法蚀刻High-k膜的方法中,将少量碳含量高的碳氟化合物气体加入到与稀有气体混合的BCl 3气体中。

    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
    54.
    发明申请
    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
    等离子体加工设备和等离子体处理方法

    公开(公告)号:US20080169065A1

    公开(公告)日:2008-07-17

    申请号:US11679926

    申请日:2007-02-28

    IPC分类号: C23F1/00

    摘要: A plasma processing apparatus having a processing chamber and a sample base, and processing a sample by using plasma generated inside the processing chamber, the processing chamber being located inside a vacuum container, the sample base being located inside the processing chamber, the sample being mounted on the sample base, the plasma processing apparatus including a component member configuring inner-side wall surface of the processing chamber, and having a dielectric portion on the inner-side wall surface, an exhaustion unit for exhausting the inside of the processing chamber, and an electric-field supply unit for supplying an electric field to the component member in a state where the plasma will not be generated inside the processing chamber, wherein magnitude of the electric field supplied from the electric-field supply unit is changed rapidly while exhausting the inside of the processing chamber by the exhaustion unit.

    摘要翻译: 一种等离子体处理装置,其具有处理室和样品基底,并且通过使用在处理室内产生的等离子体处理样品,处理室位于真空容器内,样品基座位于处理室内部,样品被安装 在样品基底上,等离子体处理装置包括构成处理室的内侧壁面的构成部件,在内侧壁面上具有电介质部分,排出处理室内部的排气单元,以及 电场供给单元,用于在处理室内不产生等离子体的状态下向构件部件供给电场,其中,从电场供给单元供给的电场的大小迅速变化,同时排出 通过排气单元在处理室内部。

    Semiconductor device and production method therefor
    55.
    发明授权
    Semiconductor device and production method therefor 有权
    半导体装置及其制造方法

    公开(公告)号:US07335989B2

    公开(公告)日:2008-02-26

    申请号:US10919385

    申请日:2004-08-17

    IPC分类号: H01L23/522

    摘要: A semiconductor device provided with: a first interconnection layer provided on a semiconductor substrate; an interlevel insulation film provided over the first interconnection layer; a barrier layer provided between the first interconnection layer and the interlevel insulation film; and a second interconnection layer of gold provided as an uppermost interconnection layer on the interlevel insulation film. The barrier layer is formed in a region of the first interconnection layer including an interlevel connection opening region of the interlevel insulation, and the region is greater than the interlevel connection opening region. The second interconnection layer is electrically connected to the first interconnection layer via the barrier layer in the interlevel connection opening.

    摘要翻译: 一种半导体器件,具备:设置在半导体衬底上的第一互连层; 设置在所述第一互连层上的层间绝缘膜; 设置在所述第一互连层和所述层间绝缘膜之间的阻挡层; 以及在层间绝缘膜上设置为最上层互连层的金的第二互连层。 阻挡层形成在第一互连层的包含层间绝缘体的层间连接开口区域的区域中,并且该区域大于层间连接开口区域。 第二互连层通过层间连接开口中的阻挡层电连接到第一互连层。

    Image forming system, relay conveyance apparatus and method for installing image forming system
    56.
    发明申请
    Image forming system, relay conveyance apparatus and method for installing image forming system 失效
    图像形成系统,继电器输送装置和图像形成系统的安装方法

    公开(公告)号:US20080018040A1

    公开(公告)日:2008-01-24

    申请号:US11653730

    申请日:2007-01-16

    IPC分类号: B65H5/22 B65H83/00 B65H85/00

    摘要: There is described an image forming system that includes an image forming apparatus provided with a first paper sheet outlet to eject the paper sheet outside therefrom; a post processing apparatus that is provided with a second paper sheet inlet; and a relay conveyance apparatus that is installed between the image forming apparatus and the post processing apparatus. The relay conveyance apparatus includes a relay conveyance unit, disposed at an upper space of the relay conveyance apparatus and provided with a first paper sheet inlet and a second paper sheet outlet and a coupling unit, which fixes the image forming apparatus and the post processing apparatus to the relay conveyance apparatus, in such a manner that the first paper sheet outlet and the second paper sheet outlet substantially coincide with the first paper sheet inlet and the second paper sheet inlet, respectively.

    摘要翻译: 描述了一种图像形成系统,其包括设置有第一纸张出口的图像形成装置,以将纸张从外部排出; 后处理装置,其具有第二纸张入口; 以及安装在图像形成装置和后处理装置之间的中继输送装置。 继电器输送装置包括:继电器输送单元,设置在继电器输送装置的上部空间,并设置有第一纸张入口和第二纸张出口以及耦合单元,其将图像形成装置和后处理装置 以第一纸张出口和第二纸张出口分别基本上与第一纸张入口和第二纸张入口重合的方式连接到继电器输送设备。

    Plasma processing apparatus
    58.
    发明授权
    Plasma processing apparatus 有权
    等离子体处理装置

    公开(公告)号:US07169255B2

    公开(公告)日:2007-01-30

    申请号:US10358894

    申请日:2003-02-06

    IPC分类号: H01L21/306 C23C16/00

    CPC分类号: H01J37/32174 H01J37/32082

    摘要: A plasma processing apparatus for providing plasma processing to an object placed inside a processing chamber includes a vacuum chamber, a process gas feeder feeding gas into the vacuum chamber, a wafer electrode disposed within the vacuum chamber for mounting the object, a wafer bias power generator supplying bias voltage to the wafer electrode, and a plasma generator for generating plasma within the vacuum chamber. The wafer bias power generator includes a clip circuit for clipping either a positive-side voltage or a negative-side voltage to a predetermined voltage.

    摘要翻译: 一种用于向放置在处理室内的物体提供等离子体处理的等离子体处理装置包括真空室,将真空室内的气体输送到工作气体供给装置,设置在真空室内的用于安装物体的晶片电极,晶片偏置功率发生器 向晶片电极提供偏置电压,以及用于在真空室内产生等离子体的等离子体发生器。 晶片偏置功率发生器包括用于将正侧电压或负侧电压截止为预定电压的钳位电路。

    Plasma processing apparatus
    59.
    发明申请
    Plasma processing apparatus 有权
    等离子体处理装置

    公开(公告)号:US20060283550A1

    公开(公告)日:2006-12-21

    申请号:US11447011

    申请日:2006-06-06

    IPC分类号: C23F1/00

    摘要: A plasma processing apparatus for generating highly-uniform and stable plasma. In an apparatus for generating plasma by using a μ wave, concerning a method for rotating the μ wave in terms of time, a plurality of (larger than two and smaller than four) waveguides are used, then forming an angle between the respective waveguides, and setting a phase difference between respective electric fields therein. This configuration allows introduction of the circularly polarized wave into a processing chamber. At this time, there are provided configuration components such as a waveguide locating method, a unit therefor, a μ-wave merging box, and a reflective-wave control unit using a reflection control chamber.

    摘要翻译: 一种用于产生高度均匀和稳定的等离子体的等离子体处理装置。 在通过使用μ波产生等离子体的装置中,关于在时间上旋转mu波的方法,使用多个(大于2个且小于4个)的波导,然后在各个波导之间形成一个角度, 并在其中各个电场之间设定相位差。 该配置允许将圆偏振波引入处理室。 此时,提供了诸如波导定位方法,其单元,mu波合并盒和使用反射控制室的反射波控制单元的配置部件。

    Disk device and data-erasing method
    60.
    发明授权
    Disk device and data-erasing method 失效
    磁盘设备和数据擦除方法

    公开(公告)号:US06900956B2

    公开(公告)日:2005-05-31

    申请号:US09825649

    申请日:2001-04-04

    CPC分类号: G11B5/0245 H01F7/14

    摘要: A magnetic circuit is provided in an enclosure that can efficiently generate magnetic flux from the enclosure, configuring a magnetic disk, to a magnetic disk. Thus, by providing such a magnetic circuit, a magnetic field different from that in other enclosure parts, that is, a local magnetic field, is generated from the magnetic circuit in case the disk device is set in an external magnetic field. Hence, this local magnetic field can effectively erase data in the magnetic disk. In particular, since the local magnetic field is generated even if the external magnetic field is weak, it is possible to not only suppress the demagnetization of permanent magnets used in the spindle motor at minimum, but also effectively erase data in the magnetic disk.

    摘要翻译: 在外壳中提供磁路,其可以有效地从壳体产生磁通量,将磁盘配置到磁盘。 因此,通过设置这样的磁路,在将磁盘装置设定在外部磁场的情况下,从磁路产生与其它外壳部分不同的磁场,即磁场。 因此,该局部磁场可以有效地擦除磁盘中的数据。 具体地说,由于即使外部磁场较弱也产生局部磁场,所以不仅可以抑制主轴电动机中使用的永久磁铁的退磁至少,还可以有效地擦除磁盘中的数据。