公开(公告)号：US07825350B2

公开(公告)日：2010-11-02

申请号：US11101543

申请日：2005-04-08

申请人： Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Toshimitsu Wakuda

发明人： Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Toshimitsu Wakuda

IPC分类号： B23K26/00

CPC分类号： H01L21/78 ,  B23K20/023 ,  B23K20/16 ,  B23K20/233 ,  B23K20/26 ,  B23K26/03 ,  B23K26/032 ,  B23K26/034 ,  B23K26/046 ,  B23K26/0624 ,  B23K26/066 ,  B23K26/073 ,  B23K26/0853 ,  B23K26/16 ,  B23K26/364 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  B65G2249/04 ,  C03B33/023 ,  C03B33/082 ,  C03B33/102 ,  C03C23/0025 ,  G02F1/1368 ,  H01L21/6836 ,  H01L2221/68327 ,  Y02P40/57 ,  Y10T29/49144 ,  Y10T83/0341

摘要： A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed.

公开(公告)号：US20060160331A1

公开(公告)日：2006-07-20

申请号：US11106645

申请日：2005-04-15

申请人： Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Toshimitsu Wakuda

发明人： Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Toshimitsu Wakuda

IPC分类号： H01L21/78

CPC分类号： H01L21/78 ,  B23K20/023 ,  B23K20/16 ,  B23K20/233 ,  B23K20/26 ,  B23K26/03 ,  B23K26/032 ,  B23K26/034 ,  B23K26/046 ,  B23K26/0624 ,  B23K26/066 ,  B23K26/073 ,  B23K26/0853 ,  B23K26/16 ,  B23K26/364 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  B65G2249/04 ,  C03B33/023 ,  C03B33/082 ,  C03B33/102 ,  C03C23/0025 ,  G02F1/1368 ,  H01L21/6836 ,  H01L2221/68327 ,  Y02P40/57 ,  Y10T29/49144 ,  Y10T83/0341

摘要： A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed.

公开(公告)号：US20060121697A1

公开(公告)日：2006-06-08

申请号：US11332228

申请日：2006-01-17

申请人： Yoshimaro Fujii ,  Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama

发明人： Yoshimaro Fujii ,  Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama

IPC分类号： H01L21/78

CPC分类号： H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

摘要： A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

摘要翻译： 一种衬底分割方法，其可以在防止发生破裂和破裂的同时使衬底细分割。 该基板分割方法包括以下步骤：将具有形成有功能元件19的正面3的半导体基板1照射在基板内，同时将聚光点定位在基板内，从而形成包含熔融处理区域的改质区域 在半导体衬底1内进行多光子吸收，并且使包含熔融处理区域的改性区域形成切割起点区域; 在形成用于切割的起点区域的步骤之后，研磨半导体衬底1的后表面21，使得半导体衬底1达到预定厚度。

公开(公告)号：US06992026B2

公开(公告)日：2006-01-31

申请号：US10385696

申请日：2003-03-12

申请人： Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Toshimitsu Wakuda

发明人： Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Toshimitsu Wakuda

IPC分类号： H01L21/36 ,  G06F17/00

CPC分类号： H01L21/78 ,  B23K20/023 ,  B23K20/16 ,  B23K20/233 ,  B23K20/26 ,  B23K26/03 ,  B23K26/032 ,  B23K26/034 ,  B23K26/046 ,  B23K26/0624 ,  B23K26/066 ,  B23K26/073 ,  B23K26/0853 ,  B23K26/16 ,  B23K26/364 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  B65G2249/04 ,  C03B33/023 ,  C03B33/082 ,  C03B33/102 ,  C03C23/0025 ,  G02F1/1368 ,  H01L21/6836 ,  H01L2221/68327 ,  Y02P40/57 ,  Y10T29/49144 ,  Y10T83/0341

摘要： A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed.

公开(公告)号：US08969761B2

公开(公告)日：2015-03-03

申请号：US12912427

申请日：2010-10-26

申请人： Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Toshimitsu Wakuda

发明人： Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Toshimitsu Wakuda

IPC分类号： B23K26/00 ,  C03C23/00 ,  B23K26/03 ,  B23K26/04 ,  B23K26/06 ,  B23K26/073 ,  B23K26/08 ,  B23K26/36 ,  B23K26/40 ,  B28D5/00 ,  C03B33/023 ,  C03B33/08 ,  C03B33/10 ,  G02F1/1368

CPC分类号： H01L21/78 ,  B23K20/023 ,  B23K20/16 ,  B23K20/233 ,  B23K20/26 ,  B23K26/03 ,  B23K26/032 ,  B23K26/034 ,  B23K26/046 ,  B23K26/0624 ,  B23K26/066 ,  B23K26/073 ,  B23K26/0853 ,  B23K26/16 ,  B23K26/364 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  B65G2249/04 ,  C03B33/023 ,  C03B33/082 ,  C03B33/102 ,  C03C23/0025 ,  G02F1/1368 ,  H01L21/6836 ,  H01L2221/68327 ,  Y02P40/57 ,  Y10T29/49144 ,  Y10T83/0341

摘要： A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed.

摘要翻译： 一种激光束加工方法和激光束加工装置，其能够切割工件而不产生在工件表面上的预定切割线的定影和裂纹，其中脉冲激光束照射在工件的预定切割线上 在导致多光子吸收的条件下并且具有与工件内部对准的凝聚点的工作表面，并且沿着预定的切割线沿着预定的切割线沿着预定的切割线移动凝聚点而在工件内部形成改质区域 由此，可以用相当小的力通过从修改区域开始沿着预定切割线的工作而切割工件，并且因为辐射的脉冲激光束几乎不被吸收到工件的表面上，所以表面不熔合 即使形成了修改区域。

公开(公告)号：US08409968B2

公开(公告)日：2013-04-02

申请号：US13206181

申请日：2011-08-09

申请人： Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Ryuji Sugiura

发明人： Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Ryuji Sugiura

IPC分类号： H01L21/00

CPC分类号： H01L21/2633 ,  B23K26/0853 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D1/221 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0106 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/07802 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/00

摘要： Multiphoton absorption is generated, so as to form a part which is intended to be cut 9 due to a molten processed region 13 within a silicon wafer 11, and then an adhesive sheet 20 bonded to the silicon wafer 11 is expanded. This cuts the silicon wafer 11 along the part which is intended to be cut 9 with a high precision into semiconductor chips 25. Here, opposing cut sections 25a, 25a of neighboring semiconductor chips 25, 25 are separated from each other from their close contact state, whereby a die-bonding resin layer 23 is also cut along the part which is intended to be cut 9. Therefore, the silicon wafer 11 and die-bonding resin layer 23 can be cut much more efficiently than in the case where the silicon wafer 11 and die-bonding resin layer 23 are cut with a blade without cutting a base 21.

摘要翻译： 产生多光子吸收，从而形成由于硅晶片11内的熔融处理区域13而被切割的部分9，然后，粘合到硅晶片11的粘合片20膨胀。 这样，将硅晶片11沿着要被切割的部分9以高精度切割成半导体芯片25.这里，相邻的半导体芯片25,25的相对的切割部分25a，25a从它们的紧密接触状态彼此分离 由此，沿着要切割的部分9也切割芯片接合树脂层23.因此，与硅晶片11和芯片接合树脂层23的情况相比，可以更有效地切割硅晶片11和芯片接合树脂层23。 11和芯片接合树脂层23用刀片切割而不切割基部21。

公开(公告)号：US20130017670A1

公开(公告)日：2013-01-17

申请号：US13596781

申请日：2012-08-28

申请人： Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Toshimitsu Wakuda

发明人： Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Toshimitsu Wakuda

IPC分类号： B23K26/00 ,  B23K26/06 ,  H01L21/268 ,  B23K26/08

CPC分类号： H01L21/78 ,  B23K20/023 ,  B23K20/16 ,  B23K20/233 ,  B23K20/26 ,  B23K26/03 ,  B23K26/032 ,  B23K26/034 ,  B23K26/046 ,  B23K26/0624 ,  B23K26/066 ,  B23K26/073 ,  B23K26/0853 ,  B23K26/16 ,  B23K26/364 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  B65G2249/04 ,  C03B33/023 ,  C03B33/082 ,  C03B33/102 ,  C03C23/0025 ,  G02F1/1368 ,  H01L21/6836 ,  H01L2221/68327 ,  Y02P40/57 ,  Y10T29/49144 ,  Y10T83/0341

摘要： A laser processing method comprising a step of irradiating an object to be processed with laser light elliptically polarized with an ellipticity of other than 1 such that a light-converging point of the laser light is located within the object along the major axis of an ellipse indicative of the elliptical polarization of laser light, along a line which the object is intended to be cut, to form a modified region caused by multiphoton absorption within the object, along the line which the object is intended to be cut.

摘要翻译： 一种激光加工方法，其特征在于，包括如下步骤：用椭圆偏振以外的激光进行椭圆偏振以外的激光照射1以使激光的聚光点沿着椭圆的长轴位于物体内 沿着物体意图被切割的线，激光的椭圆偏振，沿物体意图切割的线形成由物体内的多光子吸收引起的改质区域。

公开(公告)号：US20130012000A1

公开(公告)日：2013-01-10

申请号：US13618393

申请日：2012-09-14

申请人： Yoshimaro FUJII ,  Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama

发明人： Yoshimaro FUJII ,  Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama

IPC分类号： H01L21/78

CPC分类号： H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

摘要： A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

公开(公告)号：US08263479B2

公开(公告)日：2012-09-11

申请号：US10537509

申请日：2003-09-11

申请人： Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Ryuji Sugiura

发明人： Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Ryuji Sugiura

IPC分类号： H01L21/00

CPC分类号： H01L21/2633 ,  B23K26/0853 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D1/221 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0106 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/07802 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/00

摘要： Multiphoton absorption is generated, so as to form a part which is intended to be cut 9 due to a molten processed region 13 within a silicon wafer 11, and then an adhesive sheet 20 bonded to the silicon wafer 11 is expanded. This cuts the silicon wafer 11 along the part which is intended to be cut 9 with a high precision into semiconductor chips 25. Here, opposing cut sections 25a, 25a of neighboring semiconductor chips 25, 25 are separated from each other from their close contact state, whereby a die-bonding resin layer 23 is also cut along the part which is intended to be cut 9. Therefore, the silicon wafer 11 and die-bonding resin layer 23 can be cut much more efficiently than in the case where the silicon wafer 11 and die-bonding resin layer 23 are cut with a blade without cutting a base 21.

摘要翻译： 产生多光子吸收，从而形成由于硅晶片11内的熔融处理区域13而被切割的部分9，然后，粘合到硅晶片11的粘合片20膨胀。 这样，将硅晶片11沿着要被切割的部分9以高精度切割成半导体芯片25.这里，相邻的半导体芯片25,25的相对的切割部分25a，25a从它们的紧密接触状态彼此分离 由此，沿着要切割的部分9也切割芯片接合树脂层23.因此，与硅晶片11和芯片接合树脂层23的情况相比，可以更有效地切割硅晶片11和芯片接合树脂层23。 11和芯片接合树脂层23用刀片切割而不切割基部21。

公开(公告)号：US20050272223A1

公开(公告)日：2005-12-08

申请号：US10507321

申请日：2003-03-06

申请人： Yoshimaro Fujii ,  Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama

发明人： Yoshimaro Fujii ,  Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama

IPC分类号： B23K26/38 ,  B23K101/40 ,  H01L21/26 ,  H01L21/30 ,  H01L21/301 ,  H01L21/324 ,  H01L21/42 ,  H01L21/46 ,  H01L21/477 ,  H01L21/78 ,  H05K3/00

CPC分类号： H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

摘要： A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

摘要翻译： 一种衬底分割方法，其可以在防止发生破裂和破裂的同时使衬底细分割。 该基板分割方法包括以下步骤：将具有形成有功能元件19的正面3的半导体基板1照射在基板内，同时将聚光点定位在基板内，从而形成包含熔融处理区域的改质区域 在半导体衬底1内进行多光子吸收，并且使包括熔融处理区域的改性区域形成切割起点区域; 在形成用于切割的起点区域的步骤之后，研磨半导体衬底1的后表面21，使得半导体衬底1达到预定厚度。