公开(公告)号：US20090097166A1

公开(公告)日：2009-04-16

申请号：US12314232

申请日：2008-12-05

申请人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Susumu Hashimoto ,  Hitoshi Iwasaki

发明人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Susumu Hashimoto ,  Hitoshi Iwasaki

IPC分类号： G11B5/33

CPC分类号： H01F10/324 ,  B82Y25/00 ,  G11B5/3906 ,  H01F10/3259 ,  H01F10/3268

摘要： A magnetoresistive element has a first magnetic layer and a second magnetic layer separate from each other, the first magnetic layer and the second magnetic layer each having a magnetization whose direction is substantially pinned, and a non-magnetic conductive layer formed in contact with the first magnetic layer and the second magnetic layer and electrically connecting the first and second magnetic layers, the non-magnetic conductive layer forming a path of spin-polarized electrons from one of the magnetic layer to the other magnetic layer, the non-magnetic conductive layer comprising a portion located between the first magnetic layer and the second magnetic layer, the portion being a sensing area.

摘要翻译： 磁阻元件具有彼此分离的第一磁性层和第二磁性层，第一磁性层和第二磁性层各自具有方向基本上被钉扎的磁化，以及形成为与第一磁性层接触的非磁性导电层 磁性层和第二磁性层，并且电连接第一和第二磁性层，非磁性导电层形成自旋极化电子的路径从一个磁性层到另一个磁性层，非磁性导电层包括 位于第一磁性层和第二磁性层之间的部分，该部分是感测区域。

公开(公告)号：US07505234B2

公开(公告)日：2009-03-17

申请号：US11930699

申请日：2007-10-31

申请人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masashi Sahashi

发明人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masashi Sahashi

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398 ,  G11B5/3983 ,  G11C11/16 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01F10/3281 ,  H01F41/303 ,  H01F41/325 ,  H01L27/224 ,  H01L27/228 ,  Y10T428/1121

摘要： A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of oxide, nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film.

摘要翻译： 磁阻效应元件包括磁阻效应膜和一对电极。 具有第一磁性层的磁阻效应膜，其磁化方向基本上在一个方向上被固定; 其磁化方向响应于外部磁场而变化的第二磁性层; 位于第一和第二磁性层之间的非磁性中间层; 以及设置在所述第一磁性层中，在所述第二磁性层中，在所述第一磁性层和所述非磁性中间层之间的界面处和/或在所述第二磁性层和所述非磁性中间层之间的界面处设置的膜，所述膜具有 厚度不大于3纳米，该膜具有选自氧化物，氮化物，氮氧化物，磷化物和氟化物中的至少一种。 一对电极电连接到磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。

公开(公告)号：US07495870B2

公开(公告)日：2009-02-24

申请号：US10954545

申请日：2004-10-01

申请人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Susumu Hashimoto ,  Hitoshi Iwasaki

发明人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Susumu Hashimoto ,  Hitoshi Iwasaki

IPC分类号： G11B5/33

CPC分类号： H01F10/3272 ,  B82Y25/00 ,  G11B5/3906 ,  H01F10/3259 ,  H01F41/32 ,  H01F41/325 ,  H01L27/224 ,  H01L27/228 ,  H01L43/08

摘要： A magnetoresistive effect element includes a magnetization pinned layer, a magnetization free layer; a nonmagnetic metal layer disposed between the magnetization pinned layer and the magnetization free layer, a resistance increasing layer, a spin filter layer, and a pair of electrodes. The resistance increasing layer includes a insulation portion and is disposed in at least one of the magnetization pinned layer, the magnetization free layer, and the nonmagnetic metal layer. The spin filter layer is disposed to be adjacent to the magnetization free layer and has a thickness in a range of 5 nm to 20 nm. The magnetization free layer is disposed between the spin filter layer and the nonmagnetic metal layer. The magnetization pinned layer, the magnetization free layer, the nonmagnetic layer, the resistance increasing layer, and the spin filter layer are disposed between the electrodes.

摘要翻译： 磁阻效应元件包括磁化钉扎层，无磁化层; 设置在磁化被钉扎层和无磁化层之间的非磁性金属层，电阻增加层，自旋滤波器层和一对电极。 电阻增加层包括绝缘部分，并且设置在磁化钉扎层，磁化自由层和非磁性金属层中的至少一个中。 自旋过滤层被设置为与无磁化层相邻，并且具有5nm至20nm范围内的厚度。 无磁化层设置在自旋过滤层和非磁性金属层之间。 磁化固定层，磁化自由层，非磁性层，电阻增加层和自旋滤波器层设置在电极之间。

公开(公告)号：US20080129401A1

公开(公告)日：2008-06-05

申请号：US12027650

申请日：2008-02-07

申请人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hitoshi Iwasaki

发明人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hitoshi Iwasaki

IPC分类号： H03B5/40

CPC分类号： H03B15/006 ,  B82Y25/00 ,  G01S7/006 ,  G01S7/35 ,  G01S13/345 ,  G01S2013/936 ,  H01F10/3259 ,  H01F10/329 ,  Y10T428/24942

摘要： A high-frequency oscillator includes a high-frequency oscillation element having a magnetization pinned layer whose magnetization direction is pinned substantially in one direction, an oscillation layer formed of a magnetic material which generates a high-frequency oscillation phenomenon when a current is supplied, an intermediate layer provided between the magnetization pinned layer and the oscillation layer, the intermediate layer having an insulation layer and current paths which pass through the insulation layer in a thickness direction, and a pair of electrodes which supply a current perpendicularly to a plane of a stacked film including the magnetization pinned layer, the intermediate layer and the oscillation layer.

摘要翻译： 高频振荡器包括：高频振荡元件，具有磁化被钉扎层，其磁化方向基本上被固定在一个方向上;振动层，其由在供应电流时产生高频振荡现象的磁性材料形成， 中间层设置在磁化被钉扎层和振荡层之间，中间层具有绝缘层和沿厚度方向穿过绝缘层的电流路径，以及一对电极，其垂直于堆叠的平面提供电流 膜包括磁化固定层，中间层和振荡层。

公开(公告)号：US20080068764A1

公开(公告)日：2008-03-20

申请号：US11931089

申请日：2007-10-31

申请人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masashi Sahashi

发明人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masashi Sahashi

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398 ,  G11B5/3983 ,  G11C11/16 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01F10/3281 ,  H01F41/303 ,  H01F41/325 ,  H01L27/224 ,  H01L27/228 ,  Y10T428/1121

摘要： A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of oxide, nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film.

摘要翻译： 磁阻效应元件包括磁阻效应膜和一对电极。 具有第一磁性层的磁阻效应膜，其磁化方向基本上在一个方向上被固定; 其磁化方向响应于外部磁场而变化的第二磁性层; 位于第一和第二磁性层之间的非磁性中间层; 以及设置在所述第一磁性层中，在所述第二磁性层中，在所述第一磁性层和所述非磁性中间层之间的界面处和/或在所述第二磁性层和所述非磁性中间层之间的界面处设置的膜，所述膜具有 厚度不大于3纳米，该膜具有选自氧化物，氮化物，氮氧化物，磷化物和氟化物中的至少一种。 一对电极电连接到磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。

公开(公告)号：US20070297098A1

公开(公告)日：2007-12-27

申请号：US11848374

申请日：2007-08-31

申请人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hitoshi Iwasaki

发明人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hitoshi Iwasaki

IPC分类号： G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B2005/3996

摘要： A magnetoresistive element includes a first magnetic layer a magnetization direction of which is substantially pinned, a second magnetic layer a magnetization direction of which varies depending on an external field, a magnetic spacer layer provided between the first magnetic layer and the second magnetic layer, and electrodes which supply a current perpendicularly to a plane of a stacked film including the first magnetic layer, the magnetic spacer layer and the second magnetic layer. In this element, the magnetization directions of the first and the second magnetic layers are substantially orthogonal at zero external field.

摘要翻译： 磁阻元件包括其磁化方向基本上被钉扎的第一磁性层，其磁化方向根据外部场变化的第二磁性层，设置在第一磁性层和第二磁性层之间的磁性间隔层，以及 电极，其垂直于包括第一磁性层，磁性间隔层和第二磁性层的层叠膜的平面提供电流。 在该元件中，第一和第二磁性层的磁化方向在零外场大致正交。

公开(公告)号：US07307819B2

公开(公告)日：2007-12-11

申请号：US11190886

申请日：2005-07-28

申请人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hitoshi Iwasaki

发明人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hitoshi Iwasaki

IPC分类号： G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B2005/3996

摘要： A magnetoresistive element includes a first magnetic layer a magnetization direction of which is substantially pinned, a second magnetic layer a magnetization direction of which varies depending on an external field, a magnetic spacer layer provided between the first magnetic layer and the second magnetic layer, and electrodes which supply a current perpendicularly to a plane of a stacked film including the first magnetic layer, the magnetic spacer layer and the second magnetic layer. In this element, the magnetization directions of the first and the second magnetic layers are substantially orthogonal at zero external field.

摘要翻译： 磁阻元件包括其磁化方向基本上被钉扎的第一磁性层，其磁化方向根据外部场变化的第二磁性层，设置在第一磁性层和第二磁性层之间的磁性间隔层，以及 电极，其垂直于包括第一磁性层，磁性间隔层和第二磁性层的层叠膜的平面提供电流。 在该元件中，第一和第二磁性层的磁化方向在零外场大致正交。

公开(公告)号：US20070202249A1

公开(公告)日：2007-08-30

申请号：US11703830

申请日：2007-02-08

申请人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Hitoshi Iwasaki

发明人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Hitoshi Iwasaki

IPC分类号： B05D5/12

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3281 ,  H01F41/303 ,  H01F41/325

摘要： A method is for manufacturing a magnetoresistance effect element having a magnetization fixed layer, a non-magnetic intermediate layer, and a magnetization free layer being sequentially stacked. The method includes: forming at least a part of a magnetic layer that is to become either one of the magnetization fixed layer and the magnetization free layer; forming a function layer including at least one of an oxide, a nitride, and a fluoride on the part of the magnetic layer; and removing a part of the function layer by exposing the function layer to either one of an ion beam and plasma irradiation.

摘要翻译： 一种用于制造具有磁化固定层，非磁性中间层和顺序堆叠的无磁化层的磁阻效应元件的方法。 该方法包括：形成要成为磁化固定层和磁化自由层中的任一个的磁性层的至少一部分; 在所述磁性层的一部分上形成包括氧化物，氮化物和氟化物中的至少一种的功能层; 以及通过将功能层暴露于离子束和等离子体照射中的任一种来去除功能层的一部分。

公开(公告)号：US20060077596A1

公开(公告)日：2006-04-13

申请号：US11248296

申请日：2005-10-13

申请人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Hitoshi Iwasaki

发明人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Hitoshi Iwasaki

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3929 ,  G11B5/398 ,  G11B2005/3996

摘要： A spin-valve magnetoresistive effect film includes a magnetization fixed layer, a magnetization free layer, and a nonmagnetic intermediate layer interposed therebetween. The nonmagnetic intermediate layer has a conduction part disposed in an insulation layer and made of a nonmagnetic metal material. The ferromagnetic film stacked on an upper side of the nonmagnetic intermediate layer, out of ferromagnetic films constituting the magnetization fixed layer and the magnetization free layer has a perpendicular orientation part which is disposed above the conduction part and whose crystal growth direction is substantially perpendicular to a film plane, and a non-perpendicular orientation part which exists in a portion other than the perpendicular orientation part. A magnetoresistive effect element has a pair of electrodes passing a sense current in a direction perpendicular to the film plane of the spin-valve magnetoresistive effect film.

公开(公告)号：US20060077595A1

公开(公告)日：2006-04-13

申请号：US11248203

申请日：2005-10-13

申请人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Hitoshi Iwasaki

发明人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Hitoshi Iwasaki

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3929 ,  G11B5/398 ,  G11B2005/3996

摘要： A spin-valve magnetoresistive effect film includes a magnetization fixed layer, a magnetization free layer, and an intermediate layer interposed therebetween. The intermediate layer has a conduction part disposed in an insulation layer and made of a magnetic metal material. The ferromagnetic film stacked on an upper side of the intermediate layer, out of ferromagnetic films constituting the magnetization fixed layer and the magnetization free layer has a perpendicular orientation part which is disposed above the conduction part and whose crystal growth direction is substantially perpendicular to a film plane, and a non-perpendicular orientation part which exists in a portion other than the perpendicular orientation part. A magnetoresistive effect element has a pair of electrodes passing a sense current in a direction perpendicular to the film plane of the magnetoresistive effect film.