公开(公告)号：US06159783A

公开(公告)日：2000-12-12

申请号：US263064

申请日：1999-03-08

申请人： Tomohiro Yamashita ,  Satoshi Shimizu

发明人： Tomohiro Yamashita ,  Satoshi Shimizu

IPC分类号： H01L21/265 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/08 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L21/8249

CPC分类号： H01L29/0847 ,  H01L21/26586 ,  H01L21/28176 ,  H01L21/28202 ,  H01L21/823864 ,  H01L27/0922 ,  H01L29/4916 ,  H01L29/4983 ,  H01L29/51 ,  H01L29/518 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  Y10S257/90

摘要： An MOS transistor capable of improving hot carrier resistance and a method of manufacturing thereof are provided. In the MOS transistor, nitrogen is introduced in a sidewall oxide film, so that a concentration distribution of nitrogen in a section perpendicular to the main surface of a semiconductor substrate in the sidewall oxide film has a peak at the interface between the semiconductor substrate and the sidewall oxide film. As a result, an interface state at the interface between the sidewall oxide film and the main surface of the semiconductor substrate is suppressed, resulting in decrease of the probability at which hot carriers are trapped in the interface state. Accordingly, the hot carrier resistance is improved.

摘要翻译： 提供了能够改善热载流子电阻的MOS晶体管及其制造方法。 在MOS晶体管中，将氮引入到侧壁氧化膜中，使得与侧壁氧化膜中的半导体衬底的主表面垂直的截面中的氮的浓度分布在半导体衬底与半导体衬底之间的界面处具有峰值 侧壁氧化膜。 结果，在侧壁氧化膜和半导体衬底的主表面之间的界面处的界面状态被抑制，导致热载流子在界面态被捕获的可能性降低。 因此，提高了热载流子电阻。

公开(公告)号：US5911103A

公开(公告)日：1999-06-08

申请号：US13241

申请日：1998-01-26

申请人： Tomohiro Yamashita ,  Satoshi Shimizu

发明人： Tomohiro Yamashita ,  Satoshi Shimizu

IPC分类号： H01L21/265 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/08 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L21/8249

CPC分类号： H01L29/4983 ,  H01L21/26586 ,  H01L21/28176 ,  H01L21/28202 ,  H01L21/823864 ,  H01L27/0922 ,  H01L29/0847 ,  H01L29/4916 ,  H01L29/51 ,  H01L29/518 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  Y10S257/90

摘要： An MOS transistor capable of improving hot carrier resistance and a method of manufacturing thereof are provided. In the MOS transistor, nitrogen is introduced in a sidewall oxide film, so that a concentration distribution of nitrogen in a section perpendicular to the main surface of a semiconductor substrate in the sidewall oxide film has a peak at the interface between the semiconductor substrate and the sidewall oxide film. As a result, an interface state at the interface between the sidewall oxide film and the main surface of the semiconductor substrate is suppressed, resulting in decrease of the probability at which hot carriers are trapped in the interface state. Accordingly, the hot carrier resistance is improved.

公开(公告)号：US5561126A

公开(公告)日：1996-10-01

申请号：US362490

申请日：1995-03-16

申请人： Toshio Otani ,  Shinji Oie ,  Hiroshi Matsumoto ,  Mark Tempest ,  Ronald Micetich ,  Rajeshwar Singh ,  Tomohiro Yamashita

发明人： Toshio Otani ,  Shinji Oie ,  Hiroshi Matsumoto ,  Mark Tempest ,  Ronald Micetich ,  Rajeshwar Singh ,  Tomohiro Yamashita

IPC分类号： C07D503/00 ,  A61K31/42 ,  A61P35/00 ,  H61K31/395

CPC分类号： A61K31/42

摘要： The present invention relates to the use of 4-oxa-1-azabicyclo [3,2,0] heptan-7-one derivatives of formula (I) or a pharmaceutically acceptable salt thereof, as antitumor agents. ##STR1## Wherein R is --OCOR.sub.1 group wherein R.sub.1 is hydrogen atom, a C.sub.1-9 alkyl group which may be substituted by either one or two substituents selected together from halogen atom, hydroxy, carboxy group or (3RS,5SR)-(4-oxo-1-azabicyclo[3,2,0]heptan-7-one-3-yl) methyloxycarbonyl, a C.sub.2-17 alkenyl group, which may be substituted by carboxy group or (3RS,5SR)-(4-oxa-1-azabicyclo [3,2,0]heptan-7-one-3-yl)methyloxycarbonyl, A C.sub.2-4 alkynyl group, a C.sub.3-6 cycloalkyl group which may be substituted by carboxy group or phenyl group which may have 1, 2 or 3 substituents selected from the group consisting of cyano group, halogen atom, C.sub.1-6 alkoxy group which may be substituted by carboxy group, C.sub.1-6 alkyl group, amino group or hydroxy group.--OR.sub.2 wherein R.sub.2 is a hydrogen atom or benzyl group which may be substituted by 1 or 2 C.sub.1-6 alkoxy group.--S(O).sub.n R.sub.3 wherein R.sub.3 is phenyl group or a benzyl group which may be substituted by C.sub.1-6 alkyl group, n is 0, 1, or 2;or --CH.sub.2 OH.

摘要翻译： PCT No.PCT / GB93 / 01435 Sec。 371日期1995年3月16日 102（e）1995年3月16日PCT PCT 1993年7月8日PCT公布。 公开号WO94 / 01109 1994年1月20日的日本本发明涉及式（I）的4-氧杂-1-氮杂双环[3,2,0]庚-7-酮衍生物或其药学上可接受的盐作为抗肿瘤剂。 （I）其中R是-OCOR1基团，其中R1是氢原子，可以被一个或两个选自卤原子，羟基，羧基或（3RS，5SR）的取代基取代的C1-9烷基， - （4-氧代-1-氮杂双环[3,2,0]庚-7-酮-3-基）甲氧基羰基，可被羧基取代的C 2-7烯基或（3RS，5SR） - （ 4-氧杂-1-氮杂双环[3,2,0]庚-7-酮-3-基）甲氧基羰基，C 2-4炔基，可被羧基或苯基取代的C 3-6环烷基， 可以具有1,2或3个选自氰基，卤素原子，可被羧基，C 1-6烷基，氨基或羟基取代的C 1-6烷氧基的取代基。 -OR 2，其中R 2是可被1或2个C 1-6烷氧基取代的氢原子或苄基。 -S（O）n R 3，其中R 3是苯基或可被C 1-6烷基取代的苄基，n是0,1或2; 或-CH 2 OH。

公开(公告)号：US5554871A

公开(公告)日：1996-09-10

申请号：US483036

申请日：1995-06-07

申请人： Tomohiro Yamashita ,  Satoshi Shimizu

发明人： Tomohiro Yamashita ,  Satoshi Shimizu

IPC分类号： H01L21/265 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/08 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L27/088

CPC分类号： H01L29/4983 ,  H01L21/26586 ,  H01L21/28176 ,  H01L21/28202 ,  H01L21/823864 ,  H01L27/0922 ,  H01L29/0847 ,  H01L29/4916 ,  H01L29/51 ,  H01L29/518 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  Y10S257/90

摘要： An MOS transistor capable of improving hot carrier resistance and a method of manufacturing thereof are provided. In the MOS transistor, nitrogen is introduced in a sidewall oxide film, so that a concentration distribution of nitrogen in a section perpendicular to the main surface of a semiconductor substrate in the sidewall oxide film has a peak at the interface between the semiconductor substrate and the sidewall oxide film. As a result, an interface state at the interface between the sidewall oxide film and the main surface of the semiconductor substrate is suppressed, resulting in decrease of the probability at which hot carriers are trapped in the interface state. Accordingly, the hot carrier resistance is improved.

摘要翻译： 提供了能够改善热载流子电阻的MOS晶体管及其制造方法。 在MOS晶体管中，将氮引入到侧壁氧化膜中，使得与侧壁氧化膜中的半导体衬底的主表面垂直的截面中的氮的浓度分布在半导体衬底与半导体衬底之间的界面处具有峰值 侧壁氧化膜。 结果，在侧壁氧化膜和半导体衬底的主表面之间的界面处的界面状态被抑制，导致热载流子在界面态被捕获的可能性降低。 因此，提高了热载流子电阻。

公开(公告)号：US20110118104A1

公开(公告)日：2011-05-19

申请号：US12913370

申请日：2010-10-27

申请人： Shinsuke HASHIMOTO ,  Masato Konno ,  Momoyo Nitta ,  Tomohiro Yamashita ,  Hiroshi Sasaki

发明人： Shinsuke HASHIMOTO ,  Masato Konno ,  Momoyo Nitta ,  Tomohiro Yamashita ,  Hiroshi Sasaki

IPC分类号： C04B35/468 ,  C04B35/505

CPC分类号： C04B35/4682 ,  C04B35/6261 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3239 ,  C04B2235/3241 ,  C04B2235/3244 ,  C04B2235/3262 ,  C04B2235/3272 ,  C04B2235/3275 ,  C04B2235/3436 ,  C04B2235/3454 ,  C04B2235/442 ,  C04B2235/448 ,  C04B2235/5409 ,  C04B2235/5445 ,  C04B2235/6025 ,  C04B2235/6562 ,  C04B2235/6584 ,  C04B2235/663 ,  C04B2235/72 ,  C04B2235/726 ,  C04B2235/761 ,  H01B3/12 ,  H01G4/1227 ,  H01G4/30

摘要： A purpose of the present invention is to provide a dielectric ceramic composition which is available to obtain a multilayer ceramic capacitor having a high specific permittivity and a small temperature change of capacitance.A dielectric ceramic composition comprises a dielectric main component composed of 86.32 to 97.64 mol % of BaTiO3, 0.01 to 10.00 mol % of Y2O3 and 0.01 to 10.00 mol % of MgO and 0.001 to 0.200 mol % of V2O5, 0.01 to 1.0 mol % of more than one kind of a first additive selected from a group composed of MnO, Cr2O3, CO2O3, 0.5 to 10.0 mol % of a second additive which is {Baα, Ca (1−α)}SiO3 (note, 0≦α≦1), and Sr 10 to 500 ppm, S: 10 to 50 ppm, Al: 10 to 50 ppm, Fe: 10 to 50 ppm, Zr: 100 to 800 ppm, Y: 10 to 100 ppm, Hf: 10 to 100 ppm to 100 parts by weight of BaTiO3.

摘要翻译： 本发明的目的是提供一种电介质陶瓷组合物，其可用于获得具有高比介电常数和较小电容温度变化的多层陶瓷电容器。 电介质陶瓷组合物包括由86.32至97.64摩尔％的BaTiO 3，0.01至10.00摩尔％的Y 2 O 3和0.01至10.00摩尔％的MgO和0.001至0.200摩尔％的V 2 O 5组成的介电主要组分，0.01至1.0摩尔％ 选自由MnO，Cr 2 O 3，CO 2 O 3组成的组的第一种添加剂，作为{Baα，Ca（1-α）} SiO 3的第二添加剂为0.5〜10.0mol％（注意，0＆nlE;α＆nlE; 1） ，Sr 10〜500ppm，S：10〜50ppm，Al：10〜50ppm，Fe：10〜50ppm，Zr：100〜800ppm，Y：10〜100ppm，Hf：10〜100ppm 100重量份的BaTiO 3。

公开(公告)号：US07929256B2

公开(公告)日：2011-04-19

申请号：US11940003

申请日：2007-11-14

申请人： Tomohiro Yamashita ,  Yuya Kakuhari

发明人： Tomohiro Yamashita ,  Yuya Kakuhari

IPC分类号： G11B5/56

CPC分类号： G11B5/6064 ,  G11B5/1278 ,  G11B5/3133 ,  G11B5/40 ,  G11B5/5565 ,  G11B5/607 ,  Y10T428/1107

摘要： A thin film magnetic head is disclosed that is capable of preventing the contact between an element portion and a recording medium and a variation in the amount of protrusion of the element portion. A thin film magnetic head includes: a reproducing element; a recording element that is formed on the reproducing element; a heater that is supplied with power and generates heat to expand at least one of the reproducing element and the recording element such that the reproducing element and/or the recording element protrude toward a recording medium; and a temperature correcting resistor that is connected in parallel to the heater and has a negative resistance temperature coefficient.

摘要翻译： 公开了一种薄膜磁头，其能够防止元件部分和记录介质之间的接触以及元件部分的突出量的变化。 薄膜磁头包括：再现元件; 形成在再现元件上的记录元件; 加热器，其被供电并产生热量以扩展再现元件和记录元件中的至少一个，使得再现元件和/或记录元件朝向记录介质突出; 以及与加热器并联连接并具有负电阻温度系数的温度校正电阻器。

公开(公告)号：US20110057994A1

公开(公告)日：2011-03-10

申请号：US12874964

申请日：2010-09-02

申请人： Yukako Tamanuki ,  Shin-ichi Hakamada ,  Tomohiro Yamashita ,  Yasuhito Mori

发明人： Yukako Tamanuki ,  Shin-ichi Hakamada ,  Tomohiro Yamashita ,  Yasuhito Mori

IPC分类号： B41J2/05 ,  C09D11/02 ,  B41J2/175

CPC分类号： C09D11/40 ,  C09D11/30

摘要： A liquid composition used in combination with an ink containing a coloring material is ejected by the action of thermal energy from a recording head including a heating resistor having a protecting layer that is to come into contact with the liquid composition and that contains at least one of a metal and a metal oxide. The liquid composition contains at least either an organic compound having a carboxy group and an amino group or an amine oxide compound, an organic acid having a carboxy group, and water.

摘要翻译： 与含有着色材料的油墨组合使用的液体组合物通过来自包括具有与液体组合物接触的保护层的加热电阻器的记录头的热能的作用喷射，并且包含至少一种 金属和金属氧化物。 液体组合物至少含有具有羧基和氨基的有机化合物或氧化胺化合物，具有羧基的有机酸和水。

公开(公告)号：US20090253571A1

公开(公告)日：2009-10-08

申请号：US12382935

申请日：2009-03-26

申请人： Shinsuke Hashimoto ,  Tomohiro Yamashita ,  Tomoaki Nonaka ,  Hiroshi Sasaki

发明人： Shinsuke Hashimoto ,  Tomohiro Yamashita ,  Tomoaki Nonaka ,  Hiroshi Sasaki

IPC分类号： C04B35/468

CPC分类号： C04B35/4682 ,  C01G23/006 ,  C01P2002/72 ,  C01P2004/60 ,  C01P2006/12 ,  C04B35/46 ,  C04B35/62675 ,  C04B35/6268 ,  C04B35/62685 ,  C04B35/62821 ,  C04B2235/3232 ,  C04B2235/3236 ,  C04B2235/5409 ,  C04B2235/761 ,  C04B2235/79 ,  C04B2235/80

摘要： The invention intends to provide a precursor material for manufacturing dielectric fine particles, typically barium titanate particles, having uniform particle diameter and particle characteristics, and manufacturing method thereof. The composite oxide particles according to the present invention, which is the precursor material for barium titanate particles, substantially consists of 75 to 25 mol % barium titanate phase and 25 to 75 mol % titanium dioxide phase, and is produced by heat treating a mixed powder consisting of 100 mol % titanium dioxide particles and 25 to 75 mol % barium compound particles at 500° C. or more and less than 900° C.

摘要翻译： 本发明提供一种用于制造具有均匀粒径和粒子特性的电介质微粒（通常为钛酸钡颗粒）的前体材料及其制造方法。 作为钛酸钡粒子的前体材料的本发明的复合氧化物粒子，基本上由75〜25摩尔％的钛酸钡相和25〜75摩尔％的二氧化钛相组成，通过将混合粉末 在500℃以上且小于900℃下由100摩尔％二氧化钛颗粒和25〜75摩尔％的钡化合物颗粒组成。

公开(公告)号：US20090202426A1

公开(公告)日：2009-08-13

申请号：US12320329

申请日：2009-01-23

申请人： Tomohiro Yamashita ,  Hiroshi Sasaki ,  Tomoaki Nonaka ,  Shinsuke Hashimoto

发明人： Tomohiro Yamashita ,  Hiroshi Sasaki ,  Tomoaki Nonaka ,  Shinsuke Hashimoto

IPC分类号： C01G23/04

CPC分类号： C04B35/4682 ,  B82Y30/00 ,  C01G23/006 ,  C01P2002/77 ,  C01P2006/12 ,  C01P2006/40 ,  C01P2006/80 ,  C01P2006/88 ,  C04B35/62675 ,  C04B2235/5409 ,  C04B2235/5445 ,  C04B2235/5454 ,  C04B2235/724 ,  C04B2235/761 ,  C04B2235/765

摘要： Method for producing dielectric powder comprising steps of; preparing titanium dioxide powder having sum of surface chlorine amount and internal chlorine amount of 2000 ppm or less, surface chlorinity of 120 ppm or less, rutilated ratio of 30% or less, BET specific surface area of 30 m2/g or more; preparing barium compound powder to produce barium oxide by thermolysis; preparing powder mixture of titanium dioxide powder and barium compound powder; and heat treating the powder mixture.

摘要翻译： 制造电介质粉末的方法，包括以下步骤： 制备表面氯量和内部氯量之和为2000ppm以下，表面氯化度为120ppm以下，金红石比为30％以下，BET比表面积为30m 2 / g以上的二氧化钛粉末; 制备钡化合物粉末，通过热分解制备氧化钡; 制备二氧化钛粉末和钡化合物粉末的粉末混合物; 并对粉末混合物进行热处理。

公开(公告)号：US07247194B2

公开(公告)日：2007-07-24

申请号：US11322079

申请日：2005-12-30

申请人： Daiji Okamura ,  Shin-ichi Sato ,  Jun Yoshizawa ,  Kunihiko Nakamura ,  Tomohiro Yamashita ,  Masanori Jinnou

发明人： Daiji Okamura ,  Shin-ichi Sato ,  Jun Yoshizawa ,  Kunihiko Nakamura ,  Tomohiro Yamashita ,  Masanori Jinnou

IPC分类号： C09D11/02 ,  B41J2/01

CPC分类号： C09B47/26 ,  C09D11/328

摘要： An ink jet ink is disclosed which includes water, a water-soluble organic solvent and a coloring material and has excellent properties. The coloring material is a specific phthalocyanine derivative and is contained in a specific amount in the ink. The water-soluble organic solvent includes a specific amount of 2-pyrrolidone. In addition, a d75 value is in a specific range where the d75 value corresponds to 75% of a dispersion distance distribution, measured by a small angle X-ray scattering method, of molecular aggregates in the ink jet ink whose coloring material concentration is adjusted to 0.5 mass %.

摘要翻译： 公开了一种喷墨油墨，其包括水，水溶性有机溶剂和着色材料，并具有优异的性能。 着色材料是特定的酞菁衍生物，并且在油墨中含有特定的量。 水溶性有机溶剂包括特定量的2-吡咯烷酮。 另外，通过小角度X射线散射法测定，其中d <75％的值对应于色散距离分布的75％的特定范围 的着色材料浓度为0.5质量％的喷墨墨水中的分子聚集体。