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    Digital transmission device having an error correction mode and method for shifting down a data transmission rate
    51.
    发明授权
    Digital transmission device having an error correction mode and method for shifting down a data transmission rate 失效
    具有错误校正模式的数字传输设备和用于将数据传输速率降低的方法

    公开(公告)号：US5105423A

    公开(公告)日：1992-04-14

    申请号：US352460

    申请日：1989-05-16

    申请人： Shigetaka Tanaka ,  Yuichi Saito

    发明人： Shigetaka Tanaka ,  Yuichi Saito

    IPC分类号： H04L1/00 ,  H04L1/18 ,  H04N1/32 ,  H04N1/333

    CPC分类号： H04L1/0019 ,  H04L1/0002 ,  H04L1/18 ,  H04N1/32619 ,  H04N1/3333 ,  H04N2201/3335

    摘要： In a method for shifting down a data transmission rate at a transmitter in response to a request from a receiver for retransmission of data frames having data errors in a digital transmission system such as a facsimile system, when transmission errors occur, the receiver transmits a request to the transmitter for retransmission of one or more data frames for which one or more data errors have occurred. At the transmitter, the data transmission rate is shifted down from the first data transmission rate to a second data transmission rate which is used for retransmitting the data frames for which one or more data errors have occurred. The above shift-down operation is controlled by calculating an expected value indicating a possibility of the occurrence of a data error at the time of retransmitting the data frames in which one or more data errors have occurred, on the basis of a number of data frames requested to be retransmitted and a total number of data frames which have been transmitted from the transmitter to the receiver.

    摘要翻译： 在一种用于在发射机处降低数据传输速率的方法中，响应于来自接收机的请求重传在诸如传真系统的数字传输系统中具有数据错误的数据帧的方法，当传输错误发生时，接收机发送请求 发送到发送器，用于重发发生了一个或多个数据错误的一个或多个数据帧。 在发射机处，数据传输速率从第一数据传输速率向下移动到用于重发发生了一个或多个数据错误的数据帧的第二数据传输速率。 通过计算指示在重发发生了一个或多个数据错误的数据帧时基于数据帧的数量发生数据错误的可能性的期望值来控制上述移位操作 请求重新发送和已经从发射机发送到接收机的数据帧的总数。

    Process for manufacturing cobalt-base reduced powder
    52.
    发明授权
    Process for manufacturing cobalt-base reduced powder 失效
    制造钴基还原粉的方法

    公开(公告)号：US4131450A

    公开(公告)日：1978-12-26

    申请号：US876274

    申请日：1978-02-09

    申请人： Yuichi Saito ,  Masayuki Iijima ,  Osamu Mayama

    发明人： Yuichi Saito ,  Masayuki Iijima ,  Osamu Mayama

    IPC分类号： B22F9/22 ,  C22C1/04 ,  B22F9/00 ,  C22C19/08

    CPC分类号： C22C1/0433 ,  B22F9/22

    摘要： A main raw material powder comprising cobalt oxide powder, chromium oxide powder and carbon powder is added with at least one metal oxide powder selected from the group consisting of manganese oxide powder, vanadium oxide powder, titanium oxide powder, tantalum oxide powder, niobium oxide powder, boron oxide powder, hafnium oxide powder, tungsten oxide powder, molybdenum oxide powder, iron oxide powder, nickel oxide powder and copper oxide powder; these powders are then mixed and pulverized to prepare a mixed powder; said mixed powder is then reduced by heating under vacuum or in a reducing atmosphere to obtain a reduced sponge-like mass; said sponge-like mass is finely pulverized, thereby manufacturing a cobalt-base reduced powder.A cobalt-base sintered alloy, produced by using said cobalt-base reduced powder thus manufactured as the material powder, has a relatively wide range of diffusion sintering temperatures applicable at the time of sintering thereof and has furthermore a high sintered density.

    摘要翻译： 添加有氧化钴粉末，氧化铬粉末和碳粉末的主要原料粉末，添加至少一种选自氧化锰粉末，氧化钒粉末，氧化钛粉末，氧化钽粉末，氧化铌粉末的金属氧化物粉末 ，氧化硼粉末，氧化铪粉末，氧化钨粉末，氧化钼粉末，氧化铁粉末，氧化镍粉末和氧化铜粉末; 然后将这些粉末混合并粉碎以制备混合粉末; 然后通过在真空或还原气氛中加热来还原所述混合粉末以获得减少的海绵状物质; 所述海绵状物料被细粉碎，由此制造钴基还原粉末。

    CASK CUSHIONING BODY
    54.
    发明申请
    CASK CUSHIONING BODY 有权

    公开(公告)号：US20130068578A1

    公开(公告)日：2013-03-21

    申请号：US13701073

    申请日：2011-06-28

    申请人： Yuichi Saito ,  Junichi Kishimoto ,  Tadashi Kimura ,  Akio Kitada ,  Hiroki Tamaki

    发明人： Yuichi Saito ,  Junichi Kishimoto ,  Tadashi Kimura ,  Akio Kitada ,  Hiroki Tamaki

    IPC分类号： G21F5/08

    CPC分类号： G21F5/08 ,  G21F9/36

    摘要： A cask cushioning body includes an end-surface side member (2) in which a plurality of plates (21, 22) made of steel are formed at a distance between plate surfaces of the plates (21, 22) that face each other, and in which the plate surfaces of the plates (21, 22) are arranged along an end surface (100a) of a cask (100), and a circumferential-surface side member (3) that forms a cylindrical body (31) made of steel, one end of which is connected to a periphery of the end-surface side member (2), and that is arranged along an end-portion outer-circumferential surface (100b), wherein an impact absorber (4) that absorbs an impact by deforming is provided outside of the end-surface side member (2) and the circumferential-surface side member (3).

    摘要翻译： 一种桶式缓冲体，包括端面侧构件（2），在该端面侧构件（2）上形成有多个彼此相对的板（21,22）的板表面之间的距离的由钢制成的板（21,22），以及 其特征在于，所述板（21,22）的板面沿着桶（100）的端面（100a）配置，并且形成由钢制成的圆筒体（31）的周面侧部件（3） 其一端与端面侧构件（2）的周围连接，并且沿着端部外周面（100b）配置，其中，吸收冲击的冲击吸收体（4） 在端面侧构件（2）和周面侧构件（3）的外侧设置有变形。

    Semiconductor element and method for manufacturing the same
    55.
    发明授权
    Semiconductor element and method for manufacturing the same 有权
    半导体元件及其制造方法

    公开(公告)号：US08378348B2

    公开(公告)日：2013-02-19

    申请号：US12864461

    申请日：2009-01-08

    申请人： Yuichi Saito ,  Masao Moriguchi ,  Akihiko Kohno

    发明人： Yuichi Saito ,  Masao Moriguchi ,  Akihiko Kohno

    IPC分类号： H01L31/00

    CPC分类号： H01L29/78669 ,  H01L29/66765 ,  H01L29/78609 ,  H01L29/78618 ,  H01L29/78678

    摘要： A semiconductor device 101 includes: a substrate 1; an active layer 4 provided on the substrate 1 and including a channel region 4c, and a first region 4a and a second region 4b that are respectively located on opposite sides of the channel region 4c; first and second contact layers 6a and 6b respectively in contact with the first and second regions 4a and 4b of the active layer 4; a first electrode 7 electrically coupled to the first region 4a via the first contact layer 6a; a second electrode 8 electrically coupled to the second region 4b via the second contact layer 6b; and a gate electrode 2 provided such that a gate insulating layer 3 is interposed between the gate electrode 2 and the active layer 4, the gate electrode 2 being configured to control a conductivity of the channel region 4c. The active layer 4 contains silicon. The semiconductor device further includes an oxygen-containing silicon layer 5 between the active layer 4 and the first and second contact layers 6a, 6b. The layer 5 contains oxygen at a concentration higher than the active layer 4 and the first and second contact layers 6a, 6b.

    摘要翻译： 半导体器件101包括：衬底1; 设置在基板1上并且包括沟道区域4c的有源层4和分别位于沟道区域4c的相对侧上的第一区域4a和第二区域4b; 分别与有源层4的第一和第二区域4a和4b接触的第一和第二接触层6a和6b; 经由第一接触层6a电耦合到第一区域4a的第一电极7; 经由第二接触层6b电耦合到第二区域4b的第二电极8; 栅极电极2被设置为使得栅极绝缘层3插入在栅电极2和有源层4之间，栅电极2被配置为控制沟道区域4c的导电性。 有源层4含有硅。 半导体器件还包括有源层4和第一和第二接触层6a，6b之间的含氧硅层5。 层5含有浓度高于有源层4和第一和第二接触层6a，6b的氧。

    SEMICONDUCTOR DEVICE
    58.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20120049193A1

    公开(公告)日：2012-03-01

    申请号：US13147920

    申请日：2010-02-02

    申请人： Yuichi Saito ,  Masao Moriguchi ,  Atsuyuki Hoshino ,  Tokuo Yoshida

    发明人： Yuichi Saito ,  Masao Moriguchi ,  Atsuyuki Hoshino ,  Tokuo Yoshida

    IPC分类号： H01L29/786

    CPC分类号： G02F1/13454 ,  C23F1/26 ,  H01L27/1229 ,  H01L27/1233 ,  H01L29/66765 ,  H01L29/78696

    摘要： A semiconductor device 100 according to the present invention includes a TFT 120 and a TFT 140. The TFT 120 has a gate electrode 122, a semiconductor layer 130 including a microcrystalline semiconductor film 132, and a gate insulating layer 124 provided between the gate electrode 122 and the semiconductor layer 130. The TFT 140 has a gate electrode 142, a semiconductor layer 150 including a microcrystalline semiconductor film 152, and a gate insulating layer 144 provided between the gate electrode 142 and the semiconductor layer 150. The thickness and layer structure of the semiconductor layer 150 of the TFT 140 are different from those of the semiconductor layer 130 of the TFT 120.

    摘要翻译： 根据本发明的半导体器件100包括TFT 120和TFT 140. TFT 120具有栅极电极122，包括微晶半导体膜132的半导体层130和设置在栅极电极122之间的栅极绝缘层124 和半导体层130.TFT 140具有栅极电极142，包括微晶半导体膜152的半导体层150和设置在栅极电极142和半导体层150之间的栅极绝缘层144.厚度和层结构 TFT140的半导体层150与TFT120的半导体层130不同。

    SEMICONDUCTOR DEVICE
    59.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20110169005A1

    公开(公告)日：2011-07-14

    申请号：US13119210

    申请日：2009-09-01

    申请人： Yuichi Saito ,  Masao Moriguchi ,  Tokuo Yoshida ,  Yasuaki Iwase ,  Yohsuke Kanzaki ,  Mayuko Sakamoto

    发明人： Yuichi Saito ,  Masao Moriguchi ,  Tokuo Yoshida ,  Yasuaki Iwase ,  Yohsuke Kanzaki ,  Mayuko Sakamoto

    IPC分类号： H01L29/04

    CPC分类号： H01L27/12 ,  G02F1/136204 ,  H01L27/1225

    摘要： A diode 201 includes a gate electrode 2, a gate insulating layer 5 provided on the gate electrode 2, at least one semiconductor layer 6, 7 provided on the gate insulating layer 5 and which includes a first region 6a and a second region 7b, a first electrode 10 which is provided on the first region 6a and which is electrically coupled to the first region 6a and the gate electrode 2, and a second electrode 12 which is provided on the second region 7b and which is electrically coupled to the second region 7b. The at least one semiconductor layer 6, 7 includes a channel region 6c which extends above the gate electrode 2 with the intervention of the gate insulating layer 5 therebetween, and a resistor region 7d which does not extend above the gate electrode 2. When the diode 201 is in an ON state, an electric current path is formed between the first electrode 10 and the second electrode 12, the electric current path including the channel region 6c and the resistor region 7d.

    摘要翻译： 二极管201包括栅极电极2，设置在栅极电极2上的栅极绝缘层5，设置在栅极绝缘层5上的至少一个半导体层6,7，其包括第一区域6a和第二区域7b， 第一电极10设置在第一区域6a上并且电耦合到第一区域6a和栅极电极2;以及第二电极12，其设置在第二区域7b上并且电耦合到第二区域7b 。 至少一个半导体层6,7包括在栅极电极2上方延伸的沟道区域6c，其中介于其间的栅极绝缘层5以及不在栅极电极2上方延伸的电阻器区域7d。当二极管 201处于导通状态，在第一电极10和第二电极12之间形成电流路径，电流路径包括沟道区6c和电阻区7d。

    Complex antenna device
    60.
    发明授权
    Complex antenna device 失效
    复杂天线装置

    公开(公告)号：US07710334B2

    公开(公告)日：2010-05-04

    申请号：US11829337

    申请日：2007-07-27

    申请人： Junichi Noro ,  Hisashi Takisawa ,  Naoto Kondo ,  Yuichi Saito ,  Toshiaki Aizawa

    发明人： Junichi Noro ,  Hisashi Takisawa ,  Naoto Kondo ,  Yuichi Saito ,  Toshiaki Aizawa

    IPC分类号： H01Q1/32

    CPC分类号： H01Q1/1214 ,  H01Q1/3275 ,  H01Q1/521 ,  H01Q21/28

    摘要： A complex antenna device includes: an antenna base having a main surface and first and second ends opposed to each other; a bar antenna including a metal body and disposed upright on a side of the first end of the antenna base; at least one planar antenna mounted on the main surface of the antenna base between the first and second ends of the antenna base; a metallic member provided on a side of the second end of the antenna base so as to substantially remove physical influence of the bar antenna on the planar antenna.

    摘要翻译： 复合天线装置包括：具有主表面和彼此相对的第一和第二端的天线基座; 一个包括金属体并且直立放置在天线基底的第一端的一侧的条状天线; 至少一个平面天线安装在天线基座的主表面上，在天线基座的第一和第二端之间; 金属部件设置在天线基座的第二端的一侧，以便基本上消除条形天线对平面天线的物理影响。