公开(公告)号：US07011709B2

公开(公告)日：2006-03-14

申请号：US10603771

申请日：2003-06-26

申请人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

发明人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

IPC分类号： C30B29/16

CPC分类号： H01L21/0268 ,  B23K26/066 ,  B23K26/073 ,  C30B13/24 ,  C30B29/06 ,  H01L21/2026 ,  H01L29/66757 ,  H01L29/78675 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1012

摘要： A crystallization apparatus includes an illumination optical system to illuminate a phase shift mask and which irradiates an amorphous semiconductor film with a light beam having an intensity distribution of an inverse peak type having a smallest light intensity in a point corresponding to a phase shift portion of the phase shift mask to generate a crystallized semiconductor film. A convergence/divergence element is disposed on a light path between the illumination optical system and phase shift mask. The convergence/divergence element converts the light beam supplied from the illumination optical system into a light beam having an upward concave intensity distribution in which the light intensity is lowest in the phase shift portion and in which the light intensity increases as distant from the phase shift portion to irradiate the phase shift mask.

摘要翻译： 结晶装置包括：照明光学系统，用于照亮相移掩模，并且对与非晶半导体膜的相移部分相对应的点具有具有最小光强度的具有最小光强度的反峰值强度分布的光束照射非晶半导体膜 相移掩模以产生结晶的半导体膜。 会聚/发散元件设置在照明光学系统和相移掩模之间的光路上。 会聚/发散元件将从照明光学系统提供的光束转换为具有向上凹陷强度分布的光束，其中相位偏移部分的光强度最低，并且其中光强度远离相移 部分来照射相移掩模。

公开(公告)号：US20050223970A1

公开(公告)日：2005-10-13

申请号：US10949417

申请日：2004-09-27

申请人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Noritaka Akita

发明人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Noritaka Akita

IPC分类号： H01L21/324 ,  B01D9/00 ,  B23K26/073 ,  C30B1/00 ,  C30B13/24 ,  G02B27/09 ,  G02F1/00 ,  G02F1/136 ,  H01L21/00 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L21/0268 ,  B23K26/073 ,  C30B13/24 ,  G02B27/0927 ,  G02B27/0961 ,  H01L21/02595 ,  H01L21/2026 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： The present invention comprises a light modulation optical system having a first element which forms a desired light intensity gradient distribution to an incident light beam and a second element which forms a desired light intensity minimum distribution with an inverse peak shape to the same, and an image formation optical system which is provided between the light modulation optical system and a substrate having a polycrystal semiconductor film or an amorphous semiconductor film, wherein the incident light beam to which the light intensity gradient distribution and the light intensity minimum distribution are formed is applied to the polycrystal semiconductor film or the amorphous semiconductor film through the image formation optical system, thereby crystallizing a non-crystal semiconductor film. The pattern of the first element is opposed to the pattern of the second element.

摘要翻译： 本发明包括光调制光学系统，其具有形成对入射光束的期望光强度梯度分布的第一元件和形成具有相反峰值形状的期望光强度最小分布的第二元件，以及图像 形成光学系统，其设置在光调制光学系统和具有多晶半导体膜或非晶半导体膜的基板之间，其中形成有光强度梯度分布和光强度最小分布的入射光束被施加到 多晶半导体膜或通过图像形成光学系统的非晶半导体膜，从而使非晶半导体膜结晶。 第一元件的图案与第二元件的图案相反。

公开(公告)号：US20050272184A1

公开(公告)日：2005-12-08

申请号：US11136371

申请日：2005-05-25

申请人： Masato Hiramatsu ,  Hiroyuki Ogawa ,  Masakiyo Matsumura

发明人： Masato Hiramatsu ,  Hiroyuki Ogawa ,  Masakiyo Matsumura

IPC分类号： B23K26/06 ,  H01L21/00 ,  H01L21/20 ,  H01L21/26 ,  H01L21/268 ,  H01L21/324 ,  H01L21/336 ,  H01L21/42 ,  H01L21/477 ,  H01L21/77 ,  H01L21/84

CPC分类号： H01L21/02686 ,  B23K26/066 ,  H01L21/0268 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/66757 ,  Y10T428/265

摘要： A crystallizing method of causing a phase shifter to phase-modulate a laser beam whose wavelength is 248 nm or 300 nm or more from an excimer laser unit into a laser beam with a light intensity profile having a plurality of inverted triangular peak patterns in cross section and of irradiating the pulse laser beam onto a substrate to be crystallized for crystallization. The substrate to be crystallized is such that one or more silicon oxide films which present absorption properties to the laser beam and differ in the relative proportions of Si and O are provided on a laser beam incident face.

摘要翻译： 使移相器将来自准分子激光单元的波长为248nm或300nm以上的激光束相位调制成激光束的结晶化方法，其具有横截面为多个倒三角形峰值图案的光强度分布 并将脉冲激光束照射到待结晶的基板上以进行结晶。 要结晶的衬底使得在激光束入射面上提供一个或多个对激光束具有吸收特性并且Si和O的相对比例不同的氧化硅膜。

公开(公告)号：US07943936B2

公开(公告)日：2011-05-17

申请号：US12422762

申请日：2009-04-13

申请人： Masato Hiramatsu ,  Hiroyuki Ogawa ,  Masakiyo Matsumura

发明人： Masato Hiramatsu ,  Hiroyuki Ogawa ,  Masakiyo Matsumura

IPC分类号： H01L29/76 ,  H01L21/20 ,  H01L21/268 ,  H01L21/00 ,  H01L21/42

CPC分类号： H01L21/02686 ,  B23K26/066 ,  H01L21/0268 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/66757 ,  Y10T428/265

摘要： A crystallizing method of causing a phase shifter to phase-modulate a laser beam whose wavelength is 248 nm or 300 nm or more from an excimer laser unit into a laser beam with a light intensity profile having a plurality of inverted triangular peak patterns in cross section and of irradiating the pulse laser beam onto a substrate to be crystallized for crystallization. The substrate to be crystallized is such that one or more silicon oxide films which present absorption properties to the laser beam and differ in the relative proportions of Si and O are provided on a laser beam incident face.

摘要翻译： 使移相器将来自准分子激光单元的波长为248nm或300nm以上的激光束相位调制成激光束的结晶化方法，其具有横截面为多个倒三角形峰值图案的光强度分布 并将脉冲激光束照射到待结晶的基板上以进行结晶。 要结晶的衬底使得在激光束入射面上提供一个或多个对激光束具有吸收特性并且Si和O的相对比例不同的氧化硅膜。

公开(公告)号：US20090194769A1

公开(公告)日：2009-08-06

申请号：US12422762

申请日：2009-04-13

申请人： Masato Hiramatsu ,  Hiroyuki Ogawa ,  Masakiyo Matsumura

发明人： Masato Hiramatsu ,  Hiroyuki Ogawa ,  Masakiyo Matsumura

IPC分类号： H01L29/786 ,  H01L21/268 ,  B32B7/00 ,  H01L21/336

CPC分类号： H01L21/02686 ,  B23K26/066 ,  H01L21/0268 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/66757 ,  Y10T428/265

摘要： A crystallizing method of causing a phase shifter to phase-modulate a laser beam whose wavelength is 248 nm or 300 nm or more from an excimer laser unit into a laser beam with a light intensity profile having a plurality of inverted triangular peak patterns in cross section and of irradiating the pulse laser beam onto a substrate to be crystallized for crystallization. The substrate to be crystallized is such that one or more silicon oxide films which present absorption properties to the laser beam and differ in the relative proportions of Si and O are provided on a laser beam incident face.

摘要翻译： 使移相器将来自准分子激光单元的波长为248nm或300nm以上的激光束相位调制成激光束的结晶化方法，其具有横截面为多个倒三角形峰值图案的光强度分布 并将脉冲激光束照射到待结晶的基板上以进行结晶。 要结晶的衬底使得在激光束入射面上提供一个或多个对激光束具有吸收特性并且Si和O的相对比例不同的氧化硅膜。

公开(公告)号：US07531390B2

公开(公告)日：2009-05-12

申请号：US11136371

申请日：2005-05-25

申请人： Masato Hiramatsu ,  Hiroyuki Ogawa ,  Masakiyo Matsumura

发明人： Masato Hiramatsu ,  Hiroyuki Ogawa ,  Masakiyo Matsumura

IPC分类号： H01L21/00

CPC分类号： H01L21/02686 ,  B23K26/066 ,  H01L21/0268 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/66757 ,  Y10T428/265

摘要： A crystallizing method of causing a phase shifter to phase-modulate a laser beam whose wavelength is 248 nm or 300 nm or more from an excimer laser unit into a laser beam with a light intensity profile having a plurality of inverted triangular peak patterns in cross section and of irradiating the pulse laser beam onto a substrate to be crystallized for crystallization. The substrate to be crystallized is such that one or more silicon oxide films which present absorption properties to the laser beam and differ in the relative proportions of Si and O are provided on a laser beam incident face.

摘要翻译： 使移相器将来自准分子激光单元的波长为248nm或300nm以上的激光束相位调制成激光束的结晶化方法，其具有横截面为多个倒三角形峰值图案的光强度分布 并将脉冲激光束照射到待结晶的基板上以进行结晶。 要结晶的衬底使得在激光束入射面上提供一个或多个对激光束具有吸收特性并且Si和O的相对比例不同的氧化硅膜。

公开(公告)号：US07118946B2

公开(公告)日：2006-10-10

申请号：US10508818

申请日：2003-03-04

申请人： Masato Hiramatsu ,  Masakiyo Matsumura ,  Mikihiko Nishitani ,  Yoshinobu Kimura ,  Yoshitaka Yamamoto

发明人： Masato Hiramatsu ,  Masakiyo Matsumura ,  Mikihiko Nishitani ,  Yoshinobu Kimura ,  Yoshitaka Yamamoto

IPC分类号： H01L21/00

CPC分类号： H01L29/78696 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78675

摘要： A thin film transistor includes a one conductive type semiconductor layer; a source region and a drain region which are separately provided in the semiconductor layer; and a gate electrode provided above or below the semiconductor layer with an insulating film interposed therebetween, wherein the width of the junction face between the source region and the channel which is provided between the source region and drain region, is different from the width of the junction face between the above channel region and the drain region.

摘要翻译： 薄膜晶体管包括一个导电型半导体层; 源极区和漏极区，分别设置在半导体层中; 以及设置在所述半导体层的上方或下方的绝缘膜的栅电极，其中，所述源极区域与设置在所述源极区域与漏极区域之间的所述沟道的接合面的宽度不同于 在上述沟道区域和漏极区域之间的接合面。

公开(公告)号：US20070023759A1

公开(公告)日：2007-02-01

申请号：US11469748

申请日：2006-09-01

申请人： Masato Hiramatsu ,  Masakiyo Matsumura ,  Mikihiko Nishitani ,  Yoshinobu Kimura ,  Yoshitaka Yamamoto

发明人： Masato Hiramatsu ,  Masakiyo Matsumura ,  Mikihiko Nishitani ,  Yoshinobu Kimura ,  Yoshitaka Yamamoto

IPC分类号： H01L29/00

CPC分类号： H01L29/78696 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78675

摘要： A thin film transistor includes a one conductive type semiconductor layer (11); a source region (12) and a drain region (13) which are separately provided in the semiconductor layer; and a gate electrode (14) provided above or below the semiconductor layer with an insulating film interposed therebetween, wherein the width (Ws) of the junction face between the source region and the channel (16) which is provided between the source region and drain region, is different from the width (Wd) of the junction face between the above channel region and the drain region.

摘要翻译： 薄膜晶体管包括一个导电型半导体层（11）; 源区域（12）和漏极区域（13），其分开设置在所述半导体层中; 以及设置在所述半导体层的上方或下方的绝缘膜的栅极电极，其中，所述源极区域与所述沟道（16）之间的所述接合面的宽度（W SUB） 设置在源极区域和漏极区域之间，不同于上述沟道区域和漏极区域之间的接合面的宽度（W SUB）。

公开(公告)号：US20050161738A1

公开(公告)日：2005-07-28

申请号：US10508818

申请日：2003-03-04

申请人： Masato Hiramatsu ,  Masakiyo Matsumura ,  Mikihiko Nishitani ,  Yoshinobu Kimura ,  Yoshitaka Yamamoto

发明人： Masato Hiramatsu ,  Masakiyo Matsumura ,  Mikihiko Nishitani ,  Yoshinobu Kimura ,  Yoshitaka Yamamoto

IPC分类号： H01L21/336 ,  H01L21/77 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H01L27/01 ,  H01L21/00

CPC分类号： H01L29/78696 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78675

摘要： A thin film transistor includes a one conductive type semiconductor layer; a source region and a drain region which are separately provided in the semiconductor layer; and a gate electrode provided above or below the semiconductor layer with an insulating film interposed therebetween, wherein the width of the junction face between the source region and the channel which is provided between the source region and drain region, is different from the width of the junction face between the above channel region and the drain region.

摘要翻译： 薄膜晶体管包括一个导电型半导体层; 源极区和漏极区，分别设置在半导体层中; 以及设置在所述半导体层的上方或下方的绝缘膜的栅电极，其中，所述源极区域与设置在所述源极区域与漏极区域之间的所述沟道的接合面的宽度不同于 在上述沟道区域和漏极区域之间的接合面。

公开(公告)号：US07608891B2

公开(公告)日：2009-10-27

申请号：US11469748

申请日：2006-09-01

申请人： Masato Hiramatsu ,  Masakiyo Matsumura ,  Mikihiko Nishitani ,  Yoshinobu Kimura ,  Yoshitaka Yamamoto

发明人： Masato Hiramatsu ,  Masakiyo Matsumura ,  Mikihiko Nishitani ,  Yoshinobu Kimura ,  Yoshitaka Yamamoto

IPC分类号： H01L27/01

CPC分类号： H01L29/78696 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78675

摘要： A thin film transistor includes a one conductive type semiconductor layer (11); a source region (12) and a drain region (13) which are separately provided in the semiconductor layer; and a gate electrode (14) provided above or below the semiconductor layer with an insulating film interposed therebetween, wherein the width (Ws) of the junction face between the source region and the channel (16) which is provided between the source region and drain region, is different from the width (Wd) of the junction face between the above channel region and the drain region.

摘要翻译： 薄膜晶体管包括一个导电型半导体层（11）; 源区域（12）和漏极区域（13），其分开设置在所述半导体层中; 和设置在半导体层的上方或下方的绝缘膜的栅电极（14），其中源极区域和沟道（16）之间的接合面的宽度（Ws）设置在源区域和漏极之间 区域与上述沟道区域和漏极区域之间的接合面的宽度（Wd）不同。