摘要:
A switching element comprises a source electrode, a drain electrode arranged apart from the source electrode, an active layer in contact with the electrodes, and a gate electrode arranged apart from the source and drain electrodes and being in contact with the active layer with a gate insulating layer interposed therebetween. The active layer is formed of a dispersion film containing predetermined carbon nanotubes and a predetermined polyether compound.
摘要:
An organic thin film transistor having an insulator layer formed of a polymer compound having a repeat unit represented by the following formula [1] is disclosed: wherein R1, R2 and R3 are each independently a hydrogen atom or a methyl group, R4 is a hydrogen atom or a linear, branched or bridged cyclic hydrocarbon group having 1 to 12 carbon atoms, and x and y are molar ratio and are any number satisfying x +y=1, 0
摘要翻译:公开了具有由具有由下式[1]表示的重复单元的高分子化合物形成的绝缘体层的有机薄膜晶体管:其中R 1,R 2和 R 3各自独立地为氢原子或甲基,R 4为氢原子或具有1至12个碳原子的直链,支链或桥连的环状烃基, x和y是摩尔比,并且是满足x + y = 1,0
摘要:
A material for the luminescent layer of an organic EL device includes a bis-2,5-(2-benzazolyl) hydroquinone compound represented by a general formula: where each of R1-R8 independently represents hydrogen atom, halogen atom, hydroxy group, substituted or unsubstituted amino group, nitro group, cyano group, substituted or unsubstituted alkyl group, substituted or unsubstituted alkenyl group, substituted or unsubstituted cycloalkyl group, substituted or unsubstituted alkoxy group, substituted or unsubstituted aromatic hydrocarbon group, substituted or unsubstituted aromatic complex ring group, substituted or unsubstituted aralkyl group, substituted or unsubstituted aryloxy group, substituted or unsubstituted alkoxy carbonyl group, or carboxyl group, and any two of R1-R8 may form a ring and “X” represents “NH”, “O” or “S”.
摘要:
A multi-channel information item selection apparatus for outputting selected items when requested, has a plurality of frequently-requested information items, such as items of music, moving or still pictures, etc., stored in a first storage apparatus having a relatively high read-out speed, and a plurality of less frequently requested items stored in a second storage apparatus having a relatively low read-out speed, e.g. an appropriate speed for subsequent audio or video reproduction processing of the items. Items that are read out from the first storage apparatus are temporarily loaded into regions of a buffer memory at high speed and thereafter read out at the lower speed via a switch circuit to the respective requesting locations, so that a plurality of frequently-requested items can be simultaneously read out in parallel from the buffer memory. Items read out from the second storage apparatus are transferred directly through the switch circuit to the requesting locations. Efficiency of overall operation with low amounts of delay in responding to requests can thereby be achieved, by using a relatively low-capacity high-speed storage apparatus in combination with a relatively high-capacity low-speed storage apparatus.
摘要:
In a switching element using, for the active layer, a carbon nanotube (CNT) dispersed film which can be manufactured at low temperatures, the interaction between the CNT and the surface of the gate insulating film is insufficient. For this reason, a problem of such a switching element is that the amount of CNT fixed in the channel region is insufficient, resulting in insufficient uniformity. In the switching element of the exemplary embodiment, a gate insulating film is formed of a nonconjugated polymer material containing, in the main chain, an aromatic group and a substituted or unsubstituted alkylene or alkyleneoxy group having 2 or more carbon atoms as repeating units. As a result, the interaction between the CNT and the surface of the gate insulating film is enhanced while maintaining the flexibility of the gate insulating film, and the amount of CNT fixed in the channel region can be increased. Thereby, a switching element having good and stable transistor characteristics can be obtained by a low-temperature, simple, and inexpensive process.
摘要:
A semiconductor device has a structure in which a light-emitting layer of an organic material or the like is sandwiched between a work function controlled single-wall carbon nanotube cathode encapsulating a donor having a low ionization potential and a work function controlled single-wall carbon nanotube anode encapsulating an acceptor having a high electron affinity. A semiconductor device represented by an organic field-effect light-emitting element and a method of manufacturing the same are provided. The semiconductor device and the method of manufacturing the same make it possible to improve characteristics and performance, such as reduction in light-emission starting voltage and a high luminous efficiency, to improve reliability, such as an increase in life, and to improve productivity, such as reduction in manufacturing cost.
摘要:
When an electronic element using a carbon nanotube (CNT) is fabricated, particularly when a carbon nanotube thin film is formed on a previously formed electrode, a CNT film is manufactured on the previously formed electrode, and the CNT film on the electrode is used as an electronic element, as it is. In this case, a problem is that unless the carbon nanotubes and the electrode are in sufficient contact with each other, the contact resistance increases, and sufficient element properties are not obtained. When a carbon nanotube thin film is formed on a previously formed electrode, a conductive organic polymer thin film is formed, before or after the carbon nanotube thin film is manufactured, to decrease the contact resistance.
摘要:
A problem of a switching element using for the active layer a carbon nanotube (CNT) dispersion film that can be manufactured at low temperature has been that sufficient electrical contact and thermal conductivity between the CNTs and the source and drain electrode surfaces are not obtained. The switching element of the present invention has a structure in which a mixed layer of carbon nanotubes and a metal material, and a metal layer of the metal material are laminated in this order on source and drain electrodes, and thereby, the CNT-dispersed film and the electrode surfaces can be in firm electrical, mechanical, and thermal contact with each other. Thus, a switching element exhibiting good and stable transistor characteristics is obtained with a low-temperature, convenient, and low-cost process.
摘要:
Provided is a substrate for a light-emitting device having good light emitting efficiency and light-emitting device using the substrate. A light transparent substrate 10 is layered with a first layer 30 having a refractive index higher than that of the light transparent substrate 10 and a second layer 40 having a refractive index lower than that of the first layer. The refractive index of the first layer 30 is set to be 1.35 times as high as that of the second layer 40. With this layer structure, in an emitting layer of the light-emitting device, a wave front of a spherical wave form exited from a point light source in the front direction is converted into that of a plane wave form, and exited outside the substrate at a high efficiency.
摘要:
A first layer having a refractive index higher than that of a light transparent substrate is formed on the light transparent substrate, and a second layer having a refractive index higher than that of the first layer is formed on the first layer, and an electrode layer having a refractive index higher than that of the second layer is formed on the second layer in accordance with the present invention. By means of this configuration, a spherical-wave-shaped wavefront emitted from a point light source of an emission layer of a light-emitting device to all directions, is converted to a plane-wave-shaped wavefront within the substrate, which allows the light to be effectively emitted outside the substrate, so that a light-emitting device substrate having good light extraction efficiency and a light-emitting device using the same may be provided.