摘要:
An organic thin film transistor having an insulator layer formed of a polymer compound having a repeat unit represented by the following formula [1] is disclosed: wherein R1, R2 and R3 are each independently a hydrogen atom or a methyl group, R4 is a hydrogen atom or a linear, branched or bridged cyclic hydrocarbon group having 1 to 12 carbon atoms, and x and y are molar ratio and are any number satisfying x+y=1, 0≦x≦1 and 0≦y
摘要翻译:公开了具有由具有由下式[1]表示的重复单元的高分子化合物形成的绝缘体层的有机薄膜晶体管:其中R 1,R 2和 R 3各自独立地为氢原子或甲基,R 4为氢原子或具有1至12个碳原子的直链,支链或桥连的环状烃基, x和y是摩尔比,并且是满足x + y = 1,0 <= x <= 1和0 <= y <1的任何数。
摘要:
An organic thin film transistor having an insulator layer formed of a polymer compound having a repeat unit represented by the following formula [1] is disclosed: wherein R1, R2 and R3 are each independently a hydrogen atom or a methyl group, R4 is a hydrogen atom or a linear, branched or bridged cyclic hydrocarbon group having 1 to 12 carbon atoms, and x and y are molar ratio and are any number satisfying x +y=1, 0
摘要翻译:公开了具有由具有由下式[1]表示的重复单元的高分子化合物形成的绝缘体层的有机薄膜晶体管:其中R 1,R 2和 R 3各自独立地为氢原子或甲基,R 4为氢原子或具有1至12个碳原子的直链,支链或桥连的环状烃基, x和y是摩尔比,并且是满足x + y = 1,0
摘要:
A switching element comprises a source electrode, a drain electrode arranged apart from the source electrode, an active layer in contact with the electrodes, and a gate electrode arranged apart from the source and drain electrodes and being in contact with the active layer with a gate insulating layer interposed therebetween. The active layer is formed of a dispersion film containing predetermined carbon nanotubes and a predetermined polyether compound.
摘要:
An end portion (104a) of a first source electrode (104) and an end portion (105a) of a first drain electrode (105) face each other on a gate insulating film (103) via a channel formation region. The first source electrode (104) and first drain electrode (105) extend over steps, and the end portion (104a) and end portion (105a) face each other on the gate insulating film (103). The highest portions of the end portion (104a) and end portion (105a) are formed higher than the upper surface of the gate insulating film (103) serving as the channel formation region. A field-effect transistor of this invention also includes a second source electrode (107) which is formed in contact with the channel layer (106) and connects the first source electrode (104) and channel layer (106), and a second drain electrode (108) which is formed in contact with the channel layer (106) and connects, the first drain electrode (105) and channel layer (106).
摘要:
In a switching element using, for the active layer, a carbon nanotube (CNT) dispersed film which can be manufactured at low temperatures, the interaction between the CNT and the surface of the gate insulating film is insufficient. For this reason, a problem of such a switching element is that the amount of CNT fixed in the channel region is insufficient, resulting in insufficient uniformity. In the switching element of the exemplary embodiment, a gate insulating film is formed of a nonconjugated polymer material containing, in the main chain, an aromatic group and a substituted or unsubstituted alkylene or alkyleneoxy group having 2 or more carbon atoms as repeating units. As a result, the interaction between the CNT and the surface of the gate insulating film is enhanced while maintaining the flexibility of the gate insulating film, and the amount of CNT fixed in the channel region can be increased. Thereby, a switching element having good and stable transistor characteristics can be obtained by a low-temperature, simple, and inexpensive process.
摘要:
In a switching element using, for the active layer, a carbon nanotube (CNT) dispersed film which can be manufactured at low temperatures, the interaction between the CNT and the surface of the gate insulating film is insufficient. For this reason, a problem of such a switching element is that the amount of CNT fixed in the channel region is insufficient, resulting in insufficient uniformity. In the switching element of the exemplary embodiment, a gate insulating film is formed of a nonconjugated polymer material containing, in the main chain, an aromatic group and a substituted or unsubstituted alkylene or alkyleneoxy group having 2 or more carbon atoms as repeating units. As a result, the interaction between the CNT and the surface of the gate insulating film is enhanced while maintaining the flexibility of the gate insulating film, and the amount of CNT fixed in the channel region can be increased. Thereby, a switching element having good and stable transistor characteristics can be obtained by a low-temperature, simple, and inexpensive process.
摘要:
When an electronic element using a carbon nanotube (CNT) is fabricated, particularly when a carbon nanotube thin film is formed on a previously formed electrode, a CNT film is manufactured on the previously formed electrode, and the CNT film on the electrode is used as an electronic element, as it is. In this case, a problem is that unless the carbon nanotubes and the electrode are in sufficient contact with each other, the contact resistance increases, and sufficient element properties are not obtained. When a carbon nanotube thin film is formed on a previously formed electrode, a conductive organic polymer thin film is formed, before or after the carbon nanotube thin film is manufactured, to decrease the contact resistance.
摘要:
A problem of a switching element using for the active layer a carbon nanotube (CNT) dispersion film that can be manufactured at low temperature has been that sufficient electrical contact and thermal conductivity between the CNTs and the source and drain electrode surfaces are not obtained. The switching element of the present invention has a structure in which a mixed layer of carbon nanotubes and a metal material, and a metal layer of the metal material are laminated in this order on source and drain electrodes, and thereby, the CNT-dispersed film and the electrode surfaces can be in firm electrical, mechanical, and thermal contact with each other. Thus, a switching element exhibiting good and stable transistor characteristics is obtained with a low-temperature, convenient, and low-cost process.
摘要:
A switching element comprises a source electrode, a drain electrode arranged apart from the source electrode, an active layer in contact with the electrodes, and a gate electrode arranged apart from the source and drain electrodes and being in contact with the active layer with a gate insulating layer interposed therebetween. The active layer is formed of a dispersion film containing predetermined carbon nanotubes and a predetermined polyether compound.
摘要:
A problem of a switching element using for the active layer a carbon nanotube (CNT) dispersion film that can be manufactured at low temperature has been that sufficient electrical contact and thermal conductivity between the CNTs and the source and drain electrode surfaces are not obtained. The switching element of the present invention has a structure in which a mixed layer of carbon nanotubes and a metal material, and a metal layer of the metal material are laminated in this order on source and drain electrodes, and thereby, the CNT-dispersed film and the electrode surfaces can be in firm electrical, mechanical, and thermal contact with each other. Thus, a switching element exhibiting good and stable transistor characteristics is obtained with a low-temperature, convenient, and low-cost process.