公开(公告)号：US06469874B1

公开(公告)日：2002-10-22

申请号：US09523993

申请日：2000-03-13

申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Po-Kang Wang ,  Moris Musa Dovek ,  Gene Michael Sandler ,  Jeu-Wei C. Koo

发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Po-Kang Wang ,  Moris Musa Dovek ,  Gene Michael Sandler ,  Jeu-Wei C. Koo

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996 ,  Y10T29/49046

摘要： A high data-rate stitched pole inductive magnetic write head incorporating a non-magnetic spacer layer and a magnetic pole yoke that is recessed from the magnetic pole tip. Said spacer layer is deposited as part of a self-aligned, patterned photoresist process, wherein the spacer layer is deposited first and the P2 portion of the upper pole assembly is then plated over it to form the pole tip configuration. Increasing the thickness of the spacer layer, while keeping it within a specified tolerance range, allows the upper stitched P3 portion of the pole piece to be recessed relative to the tip of P2. The spacer layer shortens throat height, reduces saturation write current, and improves overwrite and side erasure performance.

摘要翻译： 包含非磁性间隔层的高数据速率缝合磁极感应磁性写入头和从磁极尖端凹入的磁极轭。 所述间隔层沉积为自对准的图案化光刻胶工艺的一部分，其中首先沉积间隔层，然后将上极组件的P2部分电镀在其上以形成极尖构型。 增加间隔层的厚度，同时将其保持在规定的公差范围内，允许极片的上缝合P3部分相对于P2的尖端凹入。 间隔层缩短喉部高度，降低饱和写入电流，并提高覆盖和侧面擦除性能。

公开(公告)号：US06393692B1

公开(公告)日：2002-05-28

申请号：US09283840

申请日：1999-04-01

申请人： Kochan Ju ,  Cherng-Chyi Han ,  Po-Kang Wang ,  Mao-Min Chen ,  Chun Liu ,  Jei-Wei Chang

发明人： Kochan Ju ,  Cherng-Chyi Han ,  Po-Kang Wang ,  Mao-Min Chen ,  Chun Liu ,  Jei-Wei Chang

IPC分类号： H04R3100

CPC分类号： G11B5/3912 ,  G11B5/3967 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A merged read/write magnetic recording head comprises a low magnetic moment first magnetic shield layer over a substrate. A read gap layer with a magnetoresistive head is formed over the first shield layer. A shared pole comprises a low magnetic moment second magnetic shield layer plated on a sputtered seed PLM layer over the read gap layer, a non-magnetic layer plated over the PLM layer and a HMM lower pole layer plated over the second magnetic shield layer. A write gap layer is formed over the first high magnetic moment pole layer of the shared pole. An upper pole comprises a high magnetic moment pole layer over the write gap layer.

摘要翻译： 合并的读/写磁记录头包括在衬底上的低磁矩第一磁屏蔽层。 在第一屏蔽层上形成具有磁阻头的读取间隙层。 共享极包括电镀在读取间隙层上的溅射种子PLM层上的低磁矩第二磁屏蔽层，镀在PLM层上的非磁性层和镀在第二磁屏蔽层上的HMM下极层。 在共享极的第一高磁矩极点上形成写间隙层。 上极包括写间隙层上的高磁矩极点层。

公开(公告)号：US06373667B1

公开(公告)日：2002-04-16

申请号：US09637208

申请日：2000-08-14

申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Cheng Tzong Horng ,  Po-Kang Wang ,  Chyu Jiuh Torng ,  Kochan Ju ,  Yimin Guo

发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Cheng Tzong Horng ,  Po-Kang Wang ,  Chyu Jiuh Torng ,  Kochan Ju ,  Yimin Guo

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3932 ,  Y10T29/49048

摘要： A method for fabricating a soft adjacent layer (SAL) magnetoresistive (MR) sensor element and several soft adjacent layer (SAL) magnetoresistive (MR) sensor elements which may be fabricated employing the method. There is first provided a substrate. There is formed over the substrate a dielectric layer, where the dielectric layer has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. There is also formed over the substrate a magnetoresistive (MR) layer contacting the first surface of the dielectric layer. There is also formed over the substrate a soft adjacent layer (SAL), where the soft adjacent layer (SAL) has a first surface of the soft adjacent layer (SAL) and a second surface of the soft adjacent layer (SAL). The first surface of the soft adjacent layer (SAL) contacts the second surface of the dielectric layer. Finally, there is also formed over the substrate a transverse magnetic biasing layer, where the transverse magnetic biasing layer contacts the second surface of the soft adjacent layer (SAL), and where at least one of the dielectric layer, the magnetoresistive (MR) layer, the soft adjacent layer (SAL) and the transverse magnetic biasing layer is a patterned layer formed employing an etch mask which serves as a lift-off stencil for forming a patterned second dielectric layer adjoining an edge of the patterned layer. The invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed with the magnetoresistive (MR) layer interposed between the substrate and the soft adjacent layer (SAL). Similarly, the invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element employing a transverse magnetic biasing layer formed of a hard bias permanent magnet material.

摘要翻译： 一种用于制造软相邻层（SAL）磁阻（MR）传感器元件和若干软相邻层（SAL）磁阻（MR））传感器元件的方法，其可以使用该方法制造。 首先提供基板。 在衬底上形成介电层，其中电介质层具有电介质层的第一表面和电介质层与电介质层的第一表面相对的第二表面。 还在衬底上形成与电介质层的第一表面接触的磁阻（MR）层。 还在衬底上形成软相邻层（SAL），其中软相邻层（SAL）具有软相邻层（SAL）的第一表面和软相邻层（SAL）的第二表面。 软相邻层（SAL）的第一表面接触电介质层的第二表面。 最后，还在衬底上形成横向磁偏置层，横向磁偏置层接触软相邻层（SAL）的第二表面，并且其中介电层，磁阻（MR）层中的至少一个 ，软相邻层（SAL）和横向磁偏置层是使用蚀刻掩模形成的图案层，其用作用于形成与图案化层的边缘相邻的图案化的第二介电层的剥离模板。 本发明还考虑了由介于基板和软相邻层（SAL）之间的磁阻（MR）层形成的软相邻层（SAL）磁阻（MR）传感器元件。 类似地，本发明还考虑使用由硬偏磁永磁材料形成的横向磁偏置层的软相邻层（SAL）磁阻（MR）传感器元件。

公开(公告)号：US5664316A

公开(公告)日：1997-09-09

申请号：US438430

申请日：1995-05-10

申请人： Mao-Min Chen ,  Robert Edward Fontana ,  Mohamad Towfik Krounbi ,  Kenneth Ting-Yuan Kung ,  James Hsi-Tang Lee ,  Jyh-Shiliey Jerry Lo ,  Ching Hwa Tsang ,  Po-Kang Wang

发明人： Mao-Min Chen ,  Robert Edward Fontana ,  Mohamad Towfik Krounbi ,  Kenneth Ting-Yuan Kung ,  James Hsi-Tang Lee ,  Jyh-Shiliey Jerry Lo ,  Ching Hwa Tsang ,  Po-Kang Wang

IPC分类号： G11B5/31 ,  G11B5/39 ,  G11B5/127

CPC分类号： G11B5/3932 ,  G11B5/399 ,  G11B5/3163 ,  Y10T29/49034 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A magnetoresistive (MR) read transducer having passive end regions separated by a central active region in which an MR layer is formed over substantially only the central active region and in which a magnetic bias layers is formed in each passive end region. Each of the magnetic bias layers includes a layer of ferromagnetic material and a layer of antiferromagnetic material overlaying and in contact with the ferromagnetic layer to provide an exchange-coupled magnetic bias field. Each of the magnetic bias layers form an abutting junction having magnetic and electrically continuity with the MR layer to produce a longitudinal magnetic bias field in the transducer.

摘要翻译： 磁阻（MR）读取传感器，其具有被中心有源区隔开的被动端区，其中MR层基本上仅形成在中心有源区上，并且在每个被动端区中形成磁偏置层。 每个磁偏置层包括铁磁材料层和叠层并与铁磁层接触的反铁磁材料层，以提供交换耦合磁偏置场。 每个磁偏置层形成与MR层具有磁性和电连续性的邻接结，以在换能器中产生纵向磁偏置场。

公开(公告)号：US5508867A

公开(公告)日：1996-04-16

申请号：US349763

申请日：1994-12-05

申请人： William C. Cain ,  David E. Heim ,  Po-Kang Wang

发明人： William C. Cain ,  David E. Heim ,  Po-Kang Wang

IPC分类号： G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  H01L43/08 ,  H01L43/10 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  H01L43/10 ,  G11B2005/3996

摘要： A magnetoresistive (MR) sensing system comprises an MR sensor with a layered spin valve structure including thin first and second layers of ferromagnetic material separated by a thin layer of nonmagnetic metallic material. The magnetization direction of the first layer at a zero applied magnetic field is substantially parallel to the longitudinal dimension of the MR sensor and substantially perpendicular to the fixed or "pinned" magnetization direction of the second layer. A thin keeper layer of ferromagnetic material is separated by a thin spacer layer from the layered spin valve structure. This keeper layer has a fixed magnetization direction substantially opposite that of the second layer and a moment-thickness product substantially equal to that of the second layer for cancelling the magnetostatic field from the second layer. A current flow is produced through the MR sensor to produce a magnetic field of a sign and magnitude which cancels the ferromagnetic exchange coupling between the first and second layers. Variations in resistivity of the MR sensor due to difference in rotation of the magnetizations in the first and second layers are sensed as a function of the magnetic field being sensed.

摘要翻译： 磁阻（MR）感测系统包括具有分层自旋阀结构的MR传感器，其包括由非磁性金属材料的薄层隔开的薄的第一和第二层铁磁材料。 在零施加磁场处的第一层的磁化方向基本上平行于MR传感器的纵向尺寸并且基本上垂直于第二层的固定或“固定”磁化方向。 铁磁材料的薄的保持层由薄的间隔层与分层自旋阀结构隔开。 该保持层具有与第二层基本上相反的固定磁化方向，以及基本上等于第二层的力矩厚度乘积，用于抵消来自第二层的静磁场。 通过MR传感器产生电流，以产生抵消第一和第二层之间的铁磁交换耦合的符号和幅度的磁场。 作为感测的磁场的函数，感测由于第一层和第二层中的磁化的旋转差异导致的MR传感器的电阻率变化。

公开(公告)号：US5452165A

公开(公告)日：1995-09-19

申请号：US214902

申请日：1994-03-16

申请人： Mao-Min Chen ,  Kochan Ju ,  Mohamad T. Krounbi ,  Denny D. Tang ,  Po-Kang Wang

发明人： Mao-Min Chen ,  Kochan Ju ,  Mohamad T. Krounbi ,  Denny D. Tang ,  Po-Kang Wang

IPC分类号： G11B5/008 ,  G11B5/012 ,  G11B5/31 ,  G11B5/48 ,  G11B5/56 ,  G11B5/584 ,  G11B5/29

CPC分类号： G11B5/3103 ,  G11B5/3183 ,  G11B5/4886 ,  G11B5/4893 ,  G11B5/56 ,  G11B5/584 ,  G11B5/00817 ,  G11B5/012

摘要： The present invention includes a plurality of thin film magnetic heads which are arranged in a linear array with a spacing D between adjacent heads. The pole pieces of the magnetic heads are positioned in a side by side relationship in contrast to the normal pancake type of magnetic head. The linear array is angled at a skew angle .theta. with respect to the direction of travel of the magnetic medium. The track pitch is then D sin .theta.. The track width is substantially equal to the thickness of the pole tips P1T and P2T of the magnetic heads. This thickness can be in the order of 3 .mu.m. With such a pole tip thickness the track pitch of each magnetic head in the linear array can be 3-4 .mu.m. A plurality of narrow data tracks can then be provided with minimum pitch by a corresponding number of magnetic heads. The write signals are simultaneously fed to the heads or the read signals are simultaneously fed to the heads. This allows high data rates to be processed. The invention also provides different azimuth between adjacent heads to minimize cross talk between the tracks caused by track misregistration. Additional magnetic heads can be employed for servo control as needed.

摘要翻译： 本发明包括多个薄膜磁头，其以相邻磁头之间的间隔D布置成线性阵列。 与正常的煎饼型磁头相反，磁头的极片与并排的关系定位。 线性阵列相对于磁性介质的行进方向以偏斜角θ成角度。 轨道间距为Dsinθ。 轨道宽度基本上等于磁头的极尖P1T和P2T的厚度。 该厚度可以在3μm左右。 具有这样的极尖厚度，线阵列中每个磁头的轨道间距可以是3-4μm。 然后可以通过相应数量的磁头以最小间距来提供多个窄数据轨道。 写入信号被同时馈送到头部，或者读取信号被同时馈送到头部。 这样可以处理高数据速率。 本发明还提供相邻头部之间的不同方位角，以最小化由轨道重合失调引起的轨道之间的串扰。 可根据需要使用额外的磁头进行伺服控制。

公开(公告)号：US5375023A

公开(公告)日：1994-12-20

申请号：US998171

申请日：1992-12-29

申请人： Kochan Ju ,  Mohamad T. Krounbi ,  Po-Kang Wang

发明人： Kochan Ju ,  Mohamad T. Krounbi ,  Po-Kang Wang

IPC分类号： G11B5/31 ,  G11B5/23 ,  G11B5/127 ,  G11B5/147

CPC分类号： G11B5/3163 ,  G11B5/3116

摘要： A thin film inductive head having staggered pole-tips with a self-aligned recording gap region. The recording gap region is bounded by stepped pole-tip element with the steps made large with respect to the gap thickness. The pole-tip layers extend back from the air bearing surface to form a throat region that is also large with respect to the gap thickness. The self-aligned staggered pole-tip geometry is suitable for submicron track widths because the pole-tips may themselves be much wider and the self-aligned configuration avoids submicron masking and registration difficulties. The stepped pole-tip surfaces also eliminate the side-writing problem known in the art for overlapping thin film poles.

摘要翻译： 具有具有自对准记录间隙区域的交错极尖的薄膜感应头。 记录间隙区域由步进的极尖元件限定，相对于间隙厚度的步长较大。 极尖层从空气支承表面向后延伸以形成相对于间隙厚度也很大的喉部区域。 自对准交错极尖几何形状适用于亚微米轨道宽度，因为极尖本身可能宽得多，并且自对准配置避免了亚微米掩蔽和配准困难。 阶梯式极尖表面也消除了本领域已知的用于重叠薄膜极的侧面写入问题。

公开(公告)号：US5283942A

公开(公告)日：1994-02-08

申请号：US998085

申请日：1992-12-29

申请人： Mao-Min Chen ,  Jyh-Shuey J. Lo ,  Po-Kang Wang

发明人： Mao-Min Chen ,  Jyh-Shuey J. Lo ,  Po-Kang Wang

IPC分类号： G11B5/31 ,  G11B5/42

CPC分类号： G11B5/3163 ,  G11B5/3116 ,  Y10T29/49046 ,  Y10T29/49052

摘要： A process for producing a planar thin film magnetic head wherein a sacrificial layer is introduced to provide control of the gap planarization procedure. Unbounded planar layers of lower pole-tip material and nonmagnetic gap material are first deposited and covered with a sacrificial layer that may be selectively removed by solvent. A critical layer island is then formed by etching the excess, thereby ensuring ideal planar characteristics at the edges of the critical gap layer. Following island formation, the entire assembly is covered with a nonmagnetic insulating layer and lapped or etched smooth. This planarization process is adjusted to end in the sacrificial layer. The remaining sacrificial layer material is then removed by solvent, a step that not only ensures the integrity of the underlying critical gap and pole layers but also creates the upper step needed for staggered pole-tip and conformal pole-tip head configurations.

摘要翻译： 一种制造平面薄膜磁头的方法，其中引入牺牲层以提供间隙平坦化过程的控制。 首先沉积下极尖材料和非磁性间隙材料的无界平面层，并用可以通过溶剂选择性去除的牺牲层覆盖。 然后通过蚀刻过量形成临界层岛，从而确保在临界间隙层的边缘处的理想平面特性。 随着岛形成，整个组件被非磁性绝缘层覆盖并且被研磨或蚀刻光滑。 该平坦化处理被调整为在牺牲层中结束。 然后通过溶剂去除剩余的牺牲层材料，该步骤不仅确保了下面的关键间隙和极层的完整性，而且产生了交错的极尖和共形极尖头构造所需的上部步骤。

公开(公告)号：US08693273B2

公开(公告)日：2014-04-08

申请号：US13345116

申请日：2012-01-06

申请人： Perng-Fei Yuh ,  Po-Kang Wang ,  Lejan Pu

发明人： Perng-Fei Yuh ,  Po-Kang Wang ,  Lejan Pu

IPC分类号： G11C7/02

CPC分类号： G11C7/06 ,  G11C11/1673 ,  G11C2207/063

摘要： A sense amplifier comprising a reference current developed from a programmed and a non-programmed reference cell is used to read a signal from a magnetic random access memory (MRAM) comprising magnetic tunnel junction (MTJ) cells. The average current is determined from reference cells in as few as one sense amplifier and as many as n sense amplifiers, and is an average current between the programmed reference cell and the non-programmed reference cell that approximates the mid point between the two states. The sense amplifier can be fully differential or a non differential sense amplifier.

摘要翻译： 包括从编程和非编程参考单元产生的参考电流的读出放大器用于从包括磁性隧道结（MTJ）单元的磁性随机存取存储器（MRAM）中读取信号。 平均电流由少于1个读出放大器和多达n个读出放大器的参考单元确定，并且是编程参考单元和非编程参考单元之间的平均电流，其近似于两个状态之间的中点。 读出放大器可以是全差分或非差分读出放大器。

公开(公告)号：US08133439B2

公开(公告)日：2012-03-13

申请号：US11497162

申请日：2006-08-01

申请人： Po-Kang Wang ,  Xizeng Shi ,  Chyu-Jiuh Torng

发明人： Po-Kang Wang ,  Xizeng Shi ,  Chyu-Jiuh Torng

IPC分类号： G01N15/06

CPC分类号： G01R33/0052 ,  B82Y25/00 ,  G01N15/0656 ,  G01N27/745 ,  G01N2015/0065 ,  G01R33/05 ,  G01R33/093 ,  G01R33/098 ,  Y10T29/49124 ,  Y10T29/49986

摘要： A sensor array comprising a series connection of parallel GMR sensor stripes provides a sensitive mechanism for detecting the presence of magnetized particles bonded to biological molecules that are affixed to a substrate. The adverse effect of hysteresis on the maintenance of a stable bias point for the magnetic moment of the sensor free layer is eliminated by a combination of biasing the sensor along its longitudinal direction rather than the usual transverse direction and by using the overcoat stress and magnetostriction of magnetic layers to create a compensatory transverse magnetic anisotropy. By making the spaces between the stripes narrower than the dimension of the magnetized particle and by making the width of the stripes equal to the dimension of the particle, the sensitivity of the sensor array is enhanced.

摘要翻译： 包括并联GMR传感器条的串联连接的传感器阵列提供了用于检测粘附到固定到基底上的生物分子的磁化颗粒的存在的敏感机制。 通过将传感器沿着其纵向方向而不是通常的横向偏置并通过使用传感器的外涂层应力和磁致伸缩的组合来消除滞后对维持传感器自由层的磁矩的稳定偏置点的不利影响 磁性层产生补偿横向磁各向异性。 通过使条纹之间的空间比磁化粒子的尺寸窄，并且通过使条纹的宽度等于粒子的尺寸，传感器阵列的灵敏度增强。