公开(公告)号：US09503823B2

公开(公告)日：2016-11-22

申请号：US14582223

申请日：2014-12-24

Applicant: Infineon Technologies AG

Inventor： Stefan Barzen ,  Andre Brockmeier ,  Marc Fueldner ,  Stephan Pindl ,  Wolfgang Friza

IPC: H04R9/08 ,  H04R23/00

CPC classification number: H04R19/016

Abstract: A capacitive microphone may include a housing, a membrane, and a first backplate, wherein a first insulating layer may be disposed on a first side of the first backplate facing the membrane and a second insulating layer may be disposed on a second side of the first backplate opposite to the first side of the first backplate. A further insulating layer may be disposed on a side wall of at least one of a plurality of perforation holes in the first backplate. Each conductive surface of the first backplate may be covered with insulating material.

Abstract translation: 电容麦克风可以包括壳体，膜和第一背板，其中第一绝缘层可以设置在第一背板的面向膜的第一侧上，并且第二绝缘层可以设置在第一绝缘层的第二侧上 背板与第一背板的第一侧相对。 另外的绝缘层可以设置在第一背板中的多个穿孔中的至少一个的侧壁上。 第一背板的每个导电表面可以用绝缘材料覆盖。

公开(公告)号：US09458009B2

公开(公告)日：2016-10-04

申请号：US14798112

申请日：2015-07-13

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Carsten Ahrens ,  Stefan Barzen ,  Wolfgang Friza

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81B3/0072 ,  B81B3/001 ,  B81B3/0027 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00182 ,  B81C1/00404 ,  B81C1/00984 ,  B81C2201/017 ,  B81C2201/115

Abstract: In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a sacrificial layer over a first surface of a workpiece having the first surface and an opposite second surface. A membrane is formed over the sacrificial layer. A through hole is etched through the workpiece from the second surface to expose a surface of the sacrificial layer. At least a portion of the sacrificial layer is removed from the second surface to form a cavity under the membrane. The cavity is aligned with the membrane.

公开(公告)号：US09179221B2

公开(公告)日：2015-11-03

申请号：US14255703

申请日：2014-04-17

Applicant: Infineon Technologies AG

Inventor： Stefan Barzen ,  Andreas Wiesbauer ,  Christian Jenkner ,  Marc Fueldner

IPC: H04R19/00 ,  H04R19/04 ,  G01R27/26 ,  H04R1/08 ,  B81B3/00 ,  H04R31/00

CPC classification number: H04R1/08 ,  B81B3/0086 ,  B81B2201/0257 ,  B81B2203/0127 ,  G01R27/2605 ,  H04R19/005 ,  H04R19/04 ,  H04R31/00 ,  H04R2201/003 ,  H04R2410/03

Abstract: A micro-electro-mechanical system (MEMS) device includes a first plate, a second plate disposed over the first plate, and a first moveable plate disposed between the first plate and the second plate. The MEMS device further includes a second moveable plate disposed between the first moveable plate and the second plate.

Abstract translation: 微电子机械系统（MEMS）装置包括第一板，设置在第一板上的第二板和设置在第一板和第二板之间的第一可移动板。 MEMS器件还包括设置在第一可移动板和第二板之间的第二可移动板。

公开(公告)号：US20150023529A1

公开(公告)日：2015-01-22

申请号：US14255703

申请日：2014-04-17

Applicant: Infineon Technologies AG

Inventor： Stefan Barzen ,  Andreas Wiesbauer ,  Christian Jenkner ,  Marc Fueldner

IPC: B81B7/02 ,  H04R1/08 ,  G01R27/26

CPC classification number: H04R1/08 ,  B81B3/0086 ,  B81B2201/0257 ,  B81B2203/0127 ,  G01R27/2605 ,  H04R19/005 ,  H04R19/04 ,  H04R31/00 ,  H04R2201/003 ,  H04R2410/03

Abstract: In accordance with an embodiment of the present invention, a micro-electro-mechanical system (MEMS) device includes a first plate, a second plate disposed over the first plate, and a first moveable plate disposed between the first plate and the second plate. The MEMS device further includes a second moveable plate disposed between the first moveable plate and the second plate.

Abstract translation: 根据本发明的实施例，微机电系统（MEMS）装置包括第一板，设置在第一板上的第二板和设置在第一板和第二板之间的第一可移动板。 MEMS器件还包括设置在第一可移动板和第二板之间的第二可移动板。

公开(公告)号：US20240158224A1

公开(公告)日：2024-05-16

申请号：US18540253

申请日：2023-12-14

Applicant: Infineon Technologies AG

Inventor： Wolfgang Klein ,  Evangelos Angelopoulos ,  Stefan Barzen ,  Marc Fueldner ,  Stefan Geißler ,  Matthias Friedrich Herrmann ,  Ulrich Krumbein ,  Konstantin Tkachuk ,  Giordano Tosolini ,  Juergen Wagner

IPC: B81C1/00 ,  B81B3/00 ,  B81B7/02 ,  H04R1/08 ,  H04R7/02 ,  H04R7/08 ,  H04R31/00

CPC classification number: B81C1/00158 ,  B81B3/0021 ,  B81B7/02 ,  B81C1/00103 ,  H04R1/08 ,  H04R7/02 ,  H04R7/08 ,  H04R31/003 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0384 ,  B81C2201/013 ,  H04R2201/003

Abstract: A microfabricated structure includes a perforated stator; a first isolation layer on a first surface of the perforated stator; a second isolation layer on a second surface of the perforated stator; a first membrane on the first isolation layer; a second membrane on the second isolation layer; and a pillar coupled between the first membrane and the second membrane, wherein the first isolation layer includes a first tapered edge portion having a common surface with the first membrane, wherein the second isolation layer includes a first tapered edge portion having a common surface with the second membrane, and wherein an endpoint of the first tapered edge portion of the first isolation layer is laterally offset with respect to an endpoint of the first tapered edge portion of the second isolation layer.

公开(公告)号：US20240017986A1

公开(公告)日：2024-01-18

申请号：US18352444

申请日：2023-07-14

Applicant: Infineon Technologies AG

Inventor： Stefan Barzen ,  Alexander Frey ,  Matthias Friedrich Herrmann ,  Jun Cheng Ooi ,  Hans-Jörg Timme

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/007 ,  B81B3/001 ,  B81C1/00658 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/04 ,  B81C2201/0178 ,  B81C2201/0133

Abstract: A MEMS device comprises a first membrane structure having a reinforcement region formed from one piece of the first membrane structure, wherein the reinforcement region has a larger layer thickness than an adjoining region of the first membrane structure. The MEMS device includes an electrode structure, wherein the electrode structure is vertically spaced apart from the first membrane structure.

公开(公告)号：US20230224657A1

公开(公告)日：2023-07-13

申请号：US18184197

申请日：2023-03-15

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Stefan Barzen ,  Wolfgang Friza ,  Wolfgang Klein

IPC: H04R31/00 ,  H04R19/00 ,  H04R19/04 ,  B81B3/00 ,  B81C1/00 ,  H04R7/14

CPC classification number: H04R31/003 ,  H04R19/005 ,  H04R19/04 ,  B81B3/0072 ,  B81C1/00182 ,  H04R7/14 ,  B81C1/00158 ,  B81B3/001 ,  B81C1/00666 ,  B81B2201/0257

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes oxidizing a substrate to form local oxide regions that extend above a top surface of the substrate. A membrane layer is formed over the local oxide regions and the top surface of the substrate. A portion of the substrate under the membrane layer is removed. The local oxide regions under the membrane layer are removed.

公开(公告)号：US11505453B2

公开(公告)日：2022-11-22

申请号：US16774810

申请日：2020-01-28

Applicant: Infineon Technologies AG

Inventor： Stefan Barzen

IPC: H04R19/04 ,  B81C1/00 ,  H04R7/20 ,  H04R19/00 ,  H04R29/00

Abstract: A sensor includes a membrane electrode, a counter-electrode, and at least one spring. The sensor can include a structure; a membrane electrode, which is deformable as a consequence of pressure and which is in contact with the structure; a counter-electrode mechanically connected to the structure and separated from the membrane electrode by a gap; and at least one spring mechanically connected to the membrane electrode and the counter-electrode, so as to exert an elastic force between the membrane electrode and the counter-electrode.

公开(公告)号：US20210139319A1

公开(公告)日：2021-05-13

申请号：US17151392

申请日：2021-01-18

Applicant: Infineon Technologies AG

Inventor： Wolfgang Klein ,  Evangelos Angelopoulos ,  Stefan Barzen ,  Marc Fueldner ,  Stefan Geissler ,  Matthias Friedrich Herrmann ,  Ulrich Krumbein ,  Konstantin Tkachuk ,  Giordano Tosolini ,  Juergen Wagner

IPC: B81C1/00 ,  H04R31/00 ,  B81B3/00 ,  H04R1/08 ,  B81B7/02 ,  H04R7/08 ,  H04R7/02

Abstract: A microfabricated structure includes a deflectable membrane, a first clamping layer on a first surface of the deflectable membrane, a second clamping layer on a second surface of the deflectable membrane, a first perforated backplate on the first clamping layer, and a second perforated backplate on the second clamping layer, wherein the first clamping layer comprises a first tapered edge portion having a negative slope between the first perforated backplate and the deflectable membrane.

公开(公告)号：US20210044905A1

公开(公告)日：2021-02-11

申请号：US16537308

申请日：2019-08-09

Applicant: Infineon Technologies AG

Inventor： Arnaud Walther ,  Stefan Barzen ,  Wolfgang Klein ,  Johann Strasser

IPC: H04R19/04 ,  B81B3/00

Abstract: A micro electrical mechanical systems (MEMS) device includes a flexible membrane disposed over a substrate, and a first backplate disposed over the flexible membrane. The first backplate includes a first plurality of bumps facing the flexible membrane. The MEMS device further includes a plurality of features disposed at the flexible membrane, where each of the plurality of features being associated with a corresponding one of the first plurality of bumps.