公开(公告)号：US20160149130A1

公开(公告)日：2016-05-26

申请号：US14552034

申请日：2014-11-24

Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

Inventor： Yun Wang ,  Federico Nardi

IPC: H01L45/00 ,  G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/0007 ,  G11C2013/0083 ,  G11C2013/009 ,  G11C2213/32 ,  G11C2213/33 ,  G11C2213/34 ,  G11C2213/56 ,  G11C2213/71 ,  G11C2213/77 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145

Abstract: Provided are memory cells, such as resistive random access memory (ReRAM) cells, each cell having multiple metal oxide layers formed from different oxides, and methods of manipulating and fabricating these cells. Two metal oxides used in the same cell have different dielectric constants, such as silicon oxide and hafnium oxide. The memory cell may include electrodes having different metals. Diffusivity of these metals into interfacing metal oxide layers may be different. Specifically, the lower-k oxide may be less prone to diffusion of the metal from the interfacing electrode than the higher-k oxide. The memory cell may be formed to different stable resistive levels and then resistively switched at these levels. Each level may use a different switching power. The switching level may be selected a user after fabrication of the cell and in, some embodiments, may be changed, for example, after switching the cell at a particular level.

Abstract translation: 提供了诸如电阻随机存取存储器（ReRAM）单元的存储器单元，每个单元具有由不同氧化物形成的多个金属氧化物层，以及操纵和制造这些单元的方法。 在同一电池中使用的两种金属氧化物具有不同的介电常数，例如氧化硅和氧化铪。 存储单元可以包括具有不同金属的电极。 这些金属在界面金属氧化物层中的扩散性可能是不同的。 具体而言，低K氧化物可能比较高K氧化物更不易于从界面电极扩散金属。 可以将存储单元形成为不同的稳定电阻水平，然后在这些电平下进行电阻切换。 每个级别可能使用不同的开关电源。 可以在单元的制造之后选择用户的切换级别，并且在一些实施例中，可以例如在将单元切换到特定级别之后进行改变。

公开(公告)号：US09276203B2

公开(公告)日：2016-03-01

申请号：US13721406

申请日：2012-12-20

Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

Inventor： Chien-Lan Hsueh ,  Randall J. Higuchi ,  Tim Minvielle ,  Jinhong Tong ,  Yun Wang ,  Takeshi Yamaguchi

IPC: H01L29/00 ,  H01L47/00 ,  H01L29/02 ,  H01L29/04 ,  H01L29/06 ,  H01L47/02 ,  H01L45/00 ,  H01L27/24

CPC classification number: H01L45/08 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1616

Abstract: Provided are resistive random access memory (ReRAM) cells having switching layers that include hafnium, aluminum, oxygen, and nitrogen. The composition of such layers is designed to achieve desirable performance characteristics, such as low current leakage as well as low and consistent switching currents. In some embodiments, the concentration of nitrogen in a switching layer is between about 1 and 20 atomic percent or, more specifically, between about 2 and 5 atomic percent. Addition of nitrogen helps to control concentration and distribution of defects in the switching layer. Also, nitrogen as well as a combination of two metals helps with maintaining this layer in an amorphous state. Excessive amounts of nitrogen reduce defects in the layer such that switching characteristics may be completely lost. The switching layer may be deposited using various techniques, such as sputtering or atomic layer deposition (ALD).

Abstract translation: 提供了具有包括铪，铝，氧和氮的开关层的电阻随机存取存储器（ReRAM）单元。 这些层的组成被设计成实现期望的性能特性，例如低电流泄漏以及低和一致的开关电流。 在一些实施方案中，开关层中氮的浓度在约1至20原子百分比之间，或更具体地在约2至5原子百分比之间。 添加氮有助于控制开关层缺陷的浓度和分布。 此外，氮气以及两种金属的组合有助于将该层保持在非晶状态。 过量的氮减少了层中的缺陷，使得开关特性可能完全丧失。 可以使用诸如溅射或原子层沉积（ALD）的各种技术来沉积切换层。

公开(公告)号：US20160028003A1

公开(公告)日：2016-01-28

申请号：US14338949

申请日：2014-07-23

Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

Inventor： Yun Wang

IPC: H01L45/00

CPC classification number: H01L45/08 ,  H01L27/24 ,  H01L27/2409 ,  H01L45/04 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/165 ,  H01L45/1658

Abstract: Filament size and shape in a ReRAM stack can be controlled by doping layers of a variable-resistance stack to change the crystallization temperature. This changes the density of the grain boundaries that form during annealing and provide minimal-resistance paths for the migration of charged defects. Hf, Zr, or Ti decreases the crystallization temperature and narrows the filament, while Si or N increases the crystallization temperature and widens the filament. Tapered filaments are of interest: The narrow tip requires little energy to break and re-form, enabling the cell to operate at low power, yet the wider body and base are insensitive to entropic behavior of small numbers of defects, enabling the cell to retain data for long periods.

Abstract translation: 可以通过掺杂可变电阻堆叠层来控制ReRAM堆叠中的长丝尺寸和形状来改变结晶温度。 这改变了在退火期间形成的晶界的密度，并且为带电缺陷的迁移提供了最小的电阻路径。 Hf，Zr或Ti会降低结晶温度并使丝变窄，而Si或N则会增加结晶温度并加长丝。 锥形丝是令人感兴趣的：窄尖端需要很少的能量来破坏和重新形成，使得细胞能够以低功率运行，但是更宽的身体和基部对少数缺陷的熵行为不敏感，使细胞保留 长时间的数据。

公开(公告)号：US09224951B1

公开(公告)日：2015-12-29

申请号：US14336652

申请日：2014-07-21

Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

Inventor： Yun Wang ,  Federico Nardi ,  Milind Weling

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L45/145 ,  H01L27/24 ,  H01L27/2409 ,  H01L45/04 ,  H01L45/08 ,  H01L45/1246 ,  H01L45/1253 ,  H01L45/1608 ,  H01L45/1625 ,  H01L45/1641

Abstract: A resistive-switching memory (ReRAM cell) has a current-limiting electrode layer that combines the functions of an embedded resistor, an outer electrode, and an intermediate electrode, reducing the thickness of the ReRAM stack and simplifying the fabrication process. The materials include compound nitrides of a transition metal and one of aluminum, boron, or silicon. In experiments with tantalum silicon nitride, peak yield in the desired resistivity range corresponded to ˜24 at % silicon and ˜32 at % nitrogen, believed to optimize the trade-off between inhibiting TaSi2 formation and minimizing nitrogen diffusion. A binary metal nitride may be formed at one or more of the interfaces between the current-limiting electrode and neighboring layers such as metal-oxide switching layers.

Abstract translation: 电阻式开关存储器（ReRAM单元）具有限流电极层，其结合了嵌入式电阻器，外部电极和中间电极的功能，减小了ReRAM堆叠的厚度并简化了制造工艺。 这些材料包括过渡金属和铝，硼或硅之一的化合物氮化物。 在使用钽氮化硅的实验中，所需电阻率范围内的峰值产率对应于〜24at％的硅和〜32at％的氮，据信可以优化抑制TaSi2形成和最小化氮扩散之间的折衷。 二元金属氮化物可以形成在限流电极和相邻层之间的界面中的一个或多个处，例如金属氧化物开关层。

公开(公告)号：US09178140B2

公开(公告)日：2015-11-03

申请号：US14624209

申请日：2015-02-17

Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

Inventor： Federico Nardi ,  Yun Wang

IPC: H01L29/02 ,  H01L45/00 ,  H01L51/00 ,  H01L27/24

CPC classification number: H01L45/06 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/065 ,  H01L45/08 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/141 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147 ,  H01L45/148 ,  H01L45/16 ,  H01L45/1616 ,  H01L51/0098

Abstract: A nonvolatile memory device contains a resistive switching memory element with improved device switching performance and life and methods for forming the same. The nonvolatile memory device has a first layer on a substrate, a resistive switching layer on the first layer, and a second layer. The resistive switching layer is disposed between the first layer and the second layer and the resistive switching layer comprises a material having the same morphology as the top surface of the first layer. A method of forming a nonvolatile memory element in a ReRAM device includes forming a resistive switching layer on a first layer and forming a second layer, so that the resistive switching layer is disposed between the first layer and the second layer. The resistive switching layer comprises a material formed with the same morphology as the top surface of the first layer.

Abstract translation: 非易失性存储器件包含具有改进的器件切换性能和寿命的电阻式开关存储器元件及其形成方法。 非易失性存储器件在衬底上具有第一层，在第一层上具有电阻性开关层，以及第二层。 电阻开关层设置在第一层和第二层之间，电阻开关层包括与第一层的顶表面相同形态的材料。 在ReRAM器件中形成非易失性存储元件的方法包括在第一层上形成电阻式开关层并形成第二层，使得电阻式开关层位于第一层和第二层之间。 电阻开关层包括与第一层的顶表面形成相同形态的材料。

公开(公告)号：US20150311257A1

公开(公告)日：2015-10-29

申请号：US14264280

申请日：2014-04-29

Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

Inventor： Federico Nardi ,  Ryan C. Clarke ,  Tim Minvielle ,  Yun Wang

IPC: H01L27/24 ,  H01L21/02 ,  H01L21/265 ,  H01L45/00 ,  H01L29/08

CPC classification number: H01L27/2463 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/265 ,  H01L27/2436 ,  H01L29/0847 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1616 ,  H01L45/1625

Abstract: Provided are resistive random access memory (ReRAM) cells having extended conductive layers operable as electrodes of other devices, and methods of fabricating such cells and other devices. A conductive layer of a ReRAM cell extends beyond the cell boundary defined by the variable resistance layer. The extended portion may be used a source or drain region of a FET that may control an electrical current through the cell or other devices. The extended conductive layer may be also operable as electrode of another resistive-switching cell or a different device. The extended conductive layer may be formed from doped silicon. The variable resistance layer of the ReRAM cell may be positioned on the same level as a gate dielectric layer of the FET. The variable resistance layer and the gate dielectric layer may have the same thickness and share common materials, though they may be differently doped.

Abstract translation: 提供了具有可操作为其他器件的电极的延伸导电层的电阻随机存取存储器（ReRAM）单元，以及制造这样的单元和其它器件的方法。 ReRAM单元的导电层延伸超过由可变电阻层限定的单元边界。 延伸部分可以用于可控制通过电池或其他装置的电流的FET的源极或漏极区域。 扩展导电层也可以作为另一电阻式开关电池或不同器件的电极工作。 延伸的导电层可以由掺杂的硅形成。 ReRAM单元的可变电阻层可以位于与FET的栅极电介质层相同的水平上。 可变电阻层和栅极电介质层可以具有相同的厚度并且共享共同的材料，尽管它们可以是不同的掺杂。

公开(公告)号：US09103871B2

公开(公告)日：2015-08-11

申请号：US14077545

申请日：2013-11-12

Applicant: Intermolecular, Inc.

Inventor： Yun Wang ,  Tony P. Chiang ,  Chi-I Lang

IPC: G01R31/26 ,  G01N21/55 ,  H02S50/10

CPC classification number: G01R31/26 ,  G01N21/55 ,  G01R31/2607 ,  H02S50/10

Abstract: Simultaneous measurement of an internal quantum efficiency and an external quantum efficiency of a solar cell using an emitter that emits light; a three-way beam splitter that splits the light into solar cell light and reference light, wherein the solar cell light strikes the solar cell; a reference detector that detects the reference light; a reflectance detector that detects reflectance light, wherein the reflectance light comprises a portion of the solar cell light reflected off the solar cell; a source meter operatively coupled to the solar cell; a multiplexer operatively coupled to the solar cell, the reference detector, and the reflectance detector; and a computing device that simultaneously computes the internal quantum efficiency and the external quantum efficiency of the solar cell.

Abstract translation: 使用发射光的同时测量太阳能电池的内部量子效率和外部量子效率; 三光束分离器，其将光分解成太阳能电池光和参考光，其中太阳能电池光照射到太阳能电池; 检测参考光的参考检测器; 反射光检测器，其检测反射光，其中所述反射光包括从太阳能电池反射的太阳能电池光的一部分; 可操作地耦合到太阳能电池的源计量器; 可操作地耦合到太阳能电池，参考检测器和反射检测器的多路复用器; 以及同时计算太阳能电池的内部量子效率和外部量子效率的计算装置。

公开(公告)号：US20150188043A1

公开(公告)日：2015-07-02

申请号：US14140660

申请日：2013-12-26

Applicant: Intermolecular Inc.

Inventor： Yun Wang

IPC: H01L45/00

CPC classification number: H01L45/146 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/145

Abstract: Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. The ReRAM cells may include a first layer operable as a bottom electrode and a second layer operable to switch between a first resistive state and a second resistive state. The ReRAM cells may include a third layer that includes a material having a lower breakdown voltage than the second layer and further includes a conductive path created by electrical breakdown. The third layer may include any of tantalum oxide, titanium oxide, and zirconium oxide. Moreover, the third layer may include a binary nitride or a ternary nitride. The binary nitrides may include any of tantalum, titanium, tungsten, and molybdenum. The ternary nitrides may include silicon or aluminum and any of tantalum, titanium, tungsten, and molybdenum. The ReRAM cells may further include a fourth layer operable as a top electrode.

Abstract translation: 提供了电阻随机存取存储器（ReRAM）单元及其制造方法。 ReRAM单元可以包括可操作为底部电极的第一层和可操作以在第一电阻状态和第二电阻状态之间切换的第二层。 ReRAM单元可以包括第三层，其包括具有比第二层更低的击穿电压的材料，并且还包括由电击穿产生的导电路径。 第三层可以包括氧化钽，氧化钛和氧化锆中的任何一种。 此外，第三层可以包括二元氮化物或三元氮化物。 二元氮化物可以包括钽，钛，钨和钼中的任何一种。 三元氮化物可以包括硅或铝以及钽，钛，钨和钼中的任何一种。 ReRAM单元还可以包括可操作为顶部电极的第四层。

公开(公告)号：US20150179937A1

公开(公告)日：2015-06-25

申请号：US14139186

申请日：2013-12-23

Applicant: Intermolecular Inc.

Inventor： Chien-Lan Hsueh ,  Yun Wang

IPC: H01L45/00

CPC classification number: H01L45/1616 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/16

Abstract: Provided are resistive random access memory (ReRAM) cells and methods of fabricating them using metal organic chemical vapor deposition (MOCVD). Specifically, MOCVD is used to form an embedded resistor that includes two different nitrides. The first nitride may be more conductive than the second nitride. The concentrations of these nitrides may vary throughout the thickness of the embedded resistor. This variability may be achieved by changing flow rates of MOCVD precursors during formation of the embedded resistor. The second nitride may be concentrated in the middle of the embedded resistor, while the first nitride may be present at interface surfaces of the embedded resistor. As such, the first nitride protects the second nitride from exposure to other components and/or environments and prevents oxidation of the second nitride. Controlling the distribution of the two nitrides within the embedded resistor allows using new materials and achieving consistent performance of the embedded resistor.

Abstract translation: 提供了电阻随机存取存储器（ReRAM）单元及其使用金属有机化学气相沉积（MOCVD）制造它们的方法。 具体来说，MOCVD用于形成包括两个不同氮化物的嵌入式电阻器。 第一氮化物可以比第二氮化物更具导电性。 这些氮化物的浓度可以在嵌入式电阻器的整个厚度上变化。 这种变化可以通过在形成嵌入式电阻器期间改变MOCVD前体的流速来实现。 第二氮化物可以集中在嵌入式电阻器的中间，而第一氮化物可以存在于嵌入式电阻器的界面处。 因此，第一氮化物保护第二氮化物免于暴露于其它部件和/或环境并且防止第二氮化物的氧化。 控制嵌入式电阻中的两个氮化物的分布允许使用新材料并实现嵌入式电阻器的一致性能。

公开(公告)号：US20150179930A1

公开(公告)日：2015-06-25

申请号：US14138462

申请日：2013-12-23

Applicant: Intermolecular Inc.

Inventor： Federico Nardi ,  Yun Wang

IPC: H01L45/00

CPC classification number: H01L45/1253 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1625

Abstract: Provided are resistive random access memory (ReRAM) cells having Schottky barriers and methods of fabricating such ReRAM cells. Specifically, a ReRAM cell includes two Schottky barriers, one barrier limiting an electrical current through the variable resistance layer in one direction and the other barrier limiting a current in the opposite direction. This combination of the two Schottky barriers provides current compliance during set operations and limits undesirable current overshoots during reset operations. The Schottky barriers' heights are configured to match the resistive switching characteristics of the cell. Conductive layers of the ReRAM cells operable as electrodes may be used to form these Schottky barriers together with semiconductor layers. These semiconductor layers may be different components from a variable resistance layer and, in some embodiments, may be separated by intermediate conductive layers from the variable resistance layers.

Abstract translation: 提供了具有肖特基势垒的电阻随机存取存储器（ReRAM）单元和制造这种ReRAM单元的方法。 具体来说，ReRAM单元包括两个肖特基势垒，一个势垒限制了沿一个方向通过可变电阻层的电流，另一个势垒限制了相反方向上的电流。 两个肖特基势垒的这种组合在设置操作期间提供电流兼容性，并在复位操作期间限制不期望的电流过冲。 肖特基势垒的高度配置为匹配电池的电阻开关特性。 可用作电极的ReRAM单元的导电层可以用于与半导体层一起形成这些肖特基势垒。 这些半导体层可以是与可变电阻层不同的部件，并且在一些实施例中可以由可变电阻层的中间导电层分离。