公开(公告)号：US09322061B2

公开(公告)日：2016-04-26

申请号：US14199248

申请日：2014-03-06

Applicant: International Business Machines Corporation

Inventor： Jingwei Bai ,  Qinghuang Lin ,  Gustavo A. Stolovitzky ,  Chao Wang ,  Deqiang Wang

IPC: C12Q1/68

CPC classification number: B01L3/502707 ,  B01L3/502761 ,  B01L2200/0663 ,  B01L2200/12 ,  B01L2300/0816 ,  B01L2300/0861 ,  B01L2300/0896 ,  B01L2300/12 ,  B01L2400/0415 ,  B01L2400/086 ,  B81B2201/058 ,  B81B2203/0338 ,  B81B2203/0392 ,  B81C1/00103 ,  B82Y40/00 ,  C12Q1/6869 ,  C12Q1/6874 ,  G01N33/48721

Abstract: A technique includes forming a gradient channel with width and depth gradients. A mask is disposed on top of a substrate. The mask is patterned with at least one elongated channel pattern having different elongated channel pattern widths. A channel is etched in the substrate in a single etching step, the channel having a width gradient and a corresponding depth gradient both simultaneously etched in the single etching step according to the different elongated channel pattern widths in the mask.

Abstract translation: 一种技术包括形成具有宽度和深度梯度的梯度通道。 掩模设置在基板的顶部。 掩模被图案化为具有不同细长通道图案宽度的至少一个细长通道图案。 在单个蚀刻步骤中在衬底中蚀刻沟道，根据掩模中不同的细长沟道图案宽度，通道具有在单个蚀刻步骤中同时蚀刻的宽度梯度和相应的深度梯度。

公开(公告)号：US20150323490A1

公开(公告)日：2015-11-12

申请号：US14271926

申请日：2014-05-07

Applicant: International Business Machines Corporation

Inventor： Binquan Luan ,  Gustavo A. Stolovitzky ,  Chao Wang ,  Deqiang Wang

IPC: G01N27/403

CPC classification number: G01N27/44791 ,  B82Y30/00 ,  C12Q1/6869 ,  G01N27/403 ,  G01N33/48721

Abstract: Techniques for increasing the capture zone in nano and microchannel-based polymer testing structures using concentric arrangements of nanostructures, such as nanopillars are provided. In one aspect, a testing structure for testing polymers is provided that includes a first fluid reservoir and a second fluid reservoir formed in an electrically insulating substrate; at least one channel formed in the insulating substrate that interconnects the first fluid reservoir and the second fluid reservoir; and an arrangement of nanostructures within either the first fluid reservoir or the second fluid reservoir wherein the nanostructures are arranged so as to form multiple concentric circles inside either the first fluid reservoir or the second fluid reservoir with each of the concentric circles being centered at an entry point of the channel. A method of analyzing a polymer using the testing structure is also provided.

Abstract translation: 提供了使用纳米结构的纳米结构的纳米和微通道的聚合物测试结构中的捕获区增加技术，例如纳米结构。 一方面，提供了一种用于测试聚合物的测试结构，其包括第一流体储存器和形成在电绝缘基底中的第二流体储存器; 至少一个通道，其形成在所述绝缘基板中，所述至少一个通道将所述第一流体储存器和所述第二流体储存器互连; 以及在第一流体储存器或第二流体储存器内的纳米结构的布置，其中纳米结构被布置成在第一流体储存器或第二流体储存器内部形成多个同心圆，其中每个同心圆以入口 点的通道。 还提供了使用测试结构分析聚合物的方法。

公开(公告)号：US20150284791A1

公开(公告)日：2015-10-08

申请号：US14747017

申请日：2015-06-23

Applicant: International Business Machines Corporation

Inventor： Gustavo A. Stolovitzky ,  George F. Walker ,  Chao Wang ,  Deqiang Wang

IPC: C12Q1/68

CPC classification number: C12Q1/6869 ,  C12N15/101 ,  G01N27/44747 ,  G01N27/44791 ,  C12Q2527/125 ,  C12Q2563/116 ,  C12Q2563/157 ,  C12Q2565/631

Abstract: A mechanism is provided for reducing entropy of a polyelectrolyte before the polyelectrolyte moves through a nanopore. A free-standing membrane has the nanopore formed through the membrane. An agarose gel is formed onto either and/or both sides of the nanopore in the membrane. The agarose gel is a porous material. The polyelectrolyte is uncoiled by driving the polyelectrolyte through the porous material of the agarose gel via an electric field. Driving the polyelectrolyte, having been uncoiled and linearized by the agarose gel, into the nanopore is for sequencing.

公开(公告)号：US08945404B2

公开(公告)日：2015-02-03

申请号：US13738298

申请日：2013-01-10

Applicant: International Business Machines Corporation

Inventor： Ali Afzali-Ardakani ,  Binquan Luan ,  Gustavo A. Stolovitzky ,  Chao Wang ,  Deqiang Wang

IPC: H01B13/00 ,  H01B13/06 ,  B82Y40/00 ,  G01N33/487

CPC classification number: H01B13/06 ,  B82Y40/00 ,  G01N33/48721 ,  Y10S977/70

Abstract: A mechanism is provided for fabricating nanochannels for a nanodevice. Insulating film is deposited on a substrate. A nanowire is patterned on the film. Insulating material is deposited on the nanowire and film. A first circular hole is formed in the insulating material as an inlet, over a first tip of the nanowire to expose the first tip. A second circular hole is formed as an outlet, over a second tip of the nanowire opposite the first tip to expose the second tip. A nanochannel connects the first and second holes by etching away the nanowire via an etchant in the first and the second holes. A first reservoir is attached over the first hole in connection with the nanochannel at a previous location of the first tip. A second reservoir is attached over the second hole in connection with the nanochannel at a previous location of the second tip.

Abstract translation: 提供了一种用于制造纳米器件的纳米通道的机制。 绝缘膜沉积在基底上。 纳米线在电影上图案化。 绝缘材料沉积在纳米线和薄膜上。 在绝缘材料中形成第一圆形孔作为入口，在纳米线的第一尖端上露出第一尖端。 在与第一尖端相对的纳米线的第二尖端上方形成第二圆形孔作为出口，以露出第二尖端。 纳米通道通过第一孔和第二孔中的蚀刻剂蚀刻掉纳米线而连接第一孔和第二孔。 在第一尖端的先前位置处，与纳通道相连接的第一孔附接第一储存器。 在第二个尖端的先前位置处，与第二孔相连接的第二个贮存器连接到纳米通道上。

公开(公告)号：US20140190932A1

公开(公告)日：2014-07-10

申请号：US13738298

申请日：2013-01-10

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Ali Afzali-Ardakani ,  Binquan Luan ,  Gustavo A. Stolovitzky ,  Chao Wang ,  Deqiang Wang

IPC: H01B13/06

CPC classification number: H01B13/06 ,  B82Y40/00 ,  G01N33/48721 ,  Y10S977/70

Abstract: A mechanism is provided for fabricating nanochannels for a nanodevice. Insulating film is deposited on a substrate. A nanowire is patterned on the film. Insulating material is deposited on the nanowire and film. A first circular hole is formed in the insulating material as an inlet, over a first tip of the nanowire to expose the first tip. A second circular hole is formed as an outlet, over a second tip of the nanowire opposite the first tip to expose the second tip. A nanochannel connects the first and second holes by etching away the nanowire via an etchant in the first and the second holes. A first reservoir is attached over the first hole in connection with the nanochannel at a previous location of the first tip. A second reservoir is attached over the second hole in connection with the nanochannel at a previous location of the second tip.

Abstract translation: 提供了一种用于制造纳米器件的纳米通道的机制。 绝缘膜沉积在基底上。 纳米线在电影上图案化。 绝缘材料沉积在纳米线和薄膜上。 在绝缘材料中形成第一圆形孔作为入口，在纳米线的第一尖端上露出第一尖端。 在与第一尖端相对的纳米线的第二尖端上方形成第二圆形孔作为出口，以露出第二尖端。 纳米通道通过第一孔和第二孔中的蚀刻剂蚀刻掉纳米线而连接第一孔和第二孔。 在第一尖端的先前位置处，与纳通道相连接的第一孔附接第一储存器。 在第二个尖端的先前位置处，与第二孔相连接的第二个贮存器连接到纳米通道上。