公开(公告)号：US08907702B1

公开(公告)日：2014-12-09

申请号：US13975914

申请日：2013-08-26

Applicant: Infineon Technologies AG

Inventor： Valentyn Solomko ,  Winfried Bakalski

IPC: G01R25/00 ,  G06G7/14 ,  H03K3/013

CPC classification number: H03D13/008

Abstract: In accordance with an embodiment, a phase detector circuit includes a plurality of cascaded RF stages that each has a first RF amplifier and a second RF amplifier. The first RF amplifiers are cascaded with first RF amplifiers of successive RF stages, and the second RF amplifiers are cascaded with second RF amplifiers of successive RF stages. The phase detector further includes a first mixer having a first input coupled to an output of a first RF amplifier of a first RF stage and a second input coupled to an output of a second RF amplifier of the first RF stage, and a second mixer having a first input coupled to an output of a second RF amplifier of a second RF stage and a second input coupled to an output of a first RF amplifier of the second RF stage.

Abstract translation: 根据一个实施例，相位检测器电路包括多个级联RF级，每级具有第一RF放大器和第二RF放大器。 第一RF放大器与连续RF级的第一RF放大器级联，第二RF放大器与连续RF级的第二RF放大器级联。 相位检测器还包括第一混频器，其具有耦合到第一RF级的第一RF放大器的输出的第一输入和耦合到第一RF级的第二RF放大器的输出的第二输入，以及第二混频器， 耦合到第二RF级的第二RF放大器的输出的第一输入和耦合到第二RF级的第一RF放大器的输出的第二输入。

公开(公告)号：US12301218B2

公开(公告)日：2025-05-13

申请号：US18325875

申请日：2023-05-30

Applicant: Infineon Technologies AG

Inventor： Semen Syroiezhin ,  Valentyn Solomko ,  Matthias Voelkel ,  Aleksey Zolotarevskyi

IPC: H03K17/04 ,  H03K17/0412 ,  H03K17/042 ,  H03K17/16 ,  H03K17/687 ,  H03K17/693

Abstract: A radio frequency (RF) switch includes a switchable RF path including a plurality of transistors coupled in series; a gate bias network including a plurality of resistors, wherein the gate bias network is coupled to each of the plurality of transistors in the switchable RF path; and a bypass network including a first plurality of transistors coupled in parallel to each of the plurality of transistors in the switchable RF path and a second plurality of transistors coupled in parallel to each of the plurality of resistors in the gate bias network.

公开(公告)号：US12301216B2

公开(公告)日：2025-05-13

申请号：US18463680

申请日：2023-09-08

Applicant: Infineon Technologies AG

Inventor： Valentyn Solomko ,  Semen Syroiezhin

IPC: H03K17/041 ,  H03K17/081

Abstract: An RF switch arrangement includes a shunt switch having a first RF terminal, a second RF terminal coupled to ground, a main control input, and an acceleration control input; a series switch having a first RF terminal coupled to the first RF terminal of the shunt switch, a second RF terminal, a main control input, and an acceleration control input; and a switching time acceleration circuit having a positive acceleration path input, a negative acceleration path input, and a first output coupled to the main control input of the series switch.

公开(公告)号：US12199596B2

公开(公告)日：2025-01-14

申请号：US18327525

申请日：2023-06-01

Applicant: Infineon Technologies AG

Inventor： Valentyn Solomko ,  Semen Syroiezhin ,  Andreas Bänisch

IPC: H03K17/10 ,  H03K17/687 ,  H03K19/0185

Abstract: An RF switch device includes transistors coupled in series to form a current path; a drain-source resistive bias network coupled to a drain and a source of each transistor; and a discharge switch coupled between a gate of at least one transistor and the drain-source resistive bias network, wherein the discharge switch establishes a current path between the gate of the at least one transistor and the drain-source resistive bias network only during a switching transient of the RF switch device.

公开(公告)号：US20240405763A1

公开(公告)日：2024-12-05

申请号：US18327525

申请日：2023-06-01

Applicant: Infineon Technologies AG

Inventor： Valentyn Solomko ,  Semen Syroiezhin ,  Andreas Bänisch

IPC: H03K17/10 ,  H03K17/687 ,  H03K19/0185

Abstract: An RF switch device includes transistors coupled in series to form a current path; a drain-source resistive bias network coupled to a drain and a source of each transistor; and a discharge switch coupled between a gate of at least one transistor and the drain-source resistive bias network, wherein the discharge switch establishes a current path between the gate of the at least one transistor and the drain-source resistive bias network only during a switching transient of the RF switch device.

公开(公告)号：US20240072040A1

公开(公告)日：2024-02-29

申请号：US17821615

申请日：2022-08-23

Applicant: Infineon Technologies AG

Inventor： Valentyn Solomko ,  Semen Syroiezhin ,  Mirko Scholz

IPC: H01L27/02 ,  H02H9/04

CPC classification number: H01L27/0288 ,  H01L27/0255 ,  H01L27/0266 ,  H02H9/04

Abstract: An RF switch device includes transistors coupled in series forming an RF conductive current path; a first resistive bias network forming a DC conductive bias path between gate nodes of the plurality of transistors; and a first ESD bias component coupled between the RF conductive current path and the first resistive bias network, wherein the first ESD bias component provides a DC conductive path between the RF conductive current path of the RF switch device and the first resistive bias network during an ESD event.

公开(公告)号：US20230238952A1

公开(公告)日：2023-07-27

申请号：US17648849

申请日：2022-01-25

Applicant: Infineon Technologies AG

Inventor： Semen Syroiezhin ,  Valentyn Solomko ,  Matthias Voelkel ,  Aleksey Zolotarevskyi

IPC: H03K17/042 ,  H03K17/0412 ,  H03K17/687

CPC classification number: H03K17/04206 ,  H03K17/04123 ,  H03K17/687 ,  H03K2217/0054

Abstract: A radio frequency (RF) switch includes a switchable RF path including a plurality of transistors coupled in series; a gate bias network including a plurality of resistors, wherein the gate bias network is coupled to each of the plurality of transistors in the switchable RF path; and a bypass network including a first plurality of transistors coupled in parallel to each of the plurality of transistors in the switchable RF path and a second plurality of transistors coupled in parallel to each of the plurality of resistors in the gate bias network.

公开(公告)号：US10931275B2

公开(公告)日：2021-02-23

申请号：US16872829

申请日：2020-05-12

Applicant: Infineon Technologies AG

Inventor： Semen Syroiezhin ,  Pablo Araujo Do Nascimento ,  Winfried Bakalski ,  Andrea Cattaneo ,  Jochen Essel ,  Oguzhan Oezdamar ,  Johannes Klaus Rimmelspacher ,  Valentyn Solomko ,  Danial Tayari ,  Andreas Wickmann

IPC: H03K17/00 ,  H03K17/16 ,  H03K17/56 ,  G05F1/10

Abstract: A radio frequency switch includes a first transistor and a second transistor coupled together to establish a switchable RF path, and a first compensation network coupled between the body terminal of the first transistor and the drain terminal of the second transistor, wherein the first compensation network establishes a path for current flowing between the body terminal of the first transistor and the drain terminal of the second transistor in a first direction and blocks current flowing in a second direction opposite to the first direction.

公开(公告)号：US10680605B2

公开(公告)日：2020-06-09

申请号：US15908087

申请日：2018-02-28

Applicant: Infineon Technologies AG

Inventor： Bernd Schleicher ,  Ruediger Bauder ,  Daniel Kehrer ,  Valentyn Solomko

IPC: H03K17/693 ,  H03K17/687 ,  H01P1/15 ,  H03K17/10 ,  H04B1/40

Abstract: An RF switch includes series-coupled RF switch cells coupled between an RF input and ground, each RF switch cell having an input, and a biasing network having outputs for individually biasing each of the RF switch cell inputs to a distinct bias voltage based upon a rank number of the RF switch cell.

公开(公告)号：US10680599B1

公开(公告)日：2020-06-09

申请号：US16374139

申请日：2019-04-03

Applicant: Infineon Technologies AG

Inventor： Semen Syroiezhin ,  Pablo Araujo Do Nascimento ,  Winfried Bakalski ,  Andrea Cattaneo ,  Jochen Essel ,  Oguzhan Oezdamar ,  Johannes Klaus Rimmelspacher ,  Valentyn Solomko ,  Danial Tayari ,  Andreas Wickmann

IPC: H03K17/56 ,  G05F1/10 ,  H03K17/16

Abstract: A radio frequency switch includes a first transistor and a second transistor coupled together to establish a switchable RF path, and a first compensation network coupled between the body terminal of the first transistor and the drain terminal of the second transistor, wherein the first compensation network establishes a path for current flowing between the body terminal of the first transistor and the drain terminal of the second transistor in a first direction and blocks current flowing in a second direction opposite to the first direction.