LIQUID EJECTING APPARATUS
    52.
    发明申请
    LIQUID EJECTING APPARATUS 审中-公开
    液体喷射装置

    公开(公告)号:US20100231669A1

    公开(公告)日:2010-09-16

    申请号:US12721203

    申请日:2010-03-10

    申请人: Hiroyuki Ito

    发明人: Hiroyuki Ito

    IPC分类号: B41J2/19

    CPC分类号: B41J2/17509 B41J2/17596

    摘要: Provided is a liquid ejecting apparatus for ejecting a liquid, including: a depressurizing pump: a liquid storing chamber which includes an inlet for the liquid and stores the liquid; a first partition wall portion which has flexibility and gas permeability; a first pressure control chamber which is adjacent to the liquid storing chamber with the first partition wall portion interposed therebetween; a pressure control valve which opens or seals the inlet in response to displacement of the first partition wall portion; and a switching valve which is connected to the first pressure control chamber and the depressurizing pump and selects an arbitrary state among a first communication state where the first pressure control chamber communicates with an atmosphere, a second communication state where the first pressure control chamber communicates with the depressurizing pump, and a sealed state where the first pressure control chamber is sealed.

    摘要翻译: 本发明提供一种液体喷射装置,包括:减压泵;液体储存室,包括用于液体的入口并储存液体; 具有柔软性和透气性的第一分隔壁部分; 第一压力控制室,其与所述液体储存室相邻,所述第一分隔壁部分插入在所述第一压力控制室中; 压力控制阀,其响应于所述第一分隔壁部的位移而打开或密封所述入口; 以及切换阀,其连接到所述第一压力控制室和所述减压泵,并且在所述第一压力控制室与大气连通的第一连通状态中选择任意状态,所述第一压力控制室与所述第一压力控制室连通的第二连通状态 减压泵,以及第一压力控制室被密封的密封状态。

    Plasma doping method
    53.
    发明授权
    Plasma doping method 有权
    等离子体掺杂法

    公开(公告)号:US07790586B2

    公开(公告)日:2010-09-07

    申请号:US12158852

    申请日:2007-11-13

    CPC分类号: H01L21/2236

    摘要: An impurity region is formed in a surface of a substrate by exposing the substrate to a plasma generated from a gas containing an impurity in a vacuum chamber. In this process, a plasma doping condition is set with respect to a dose of the impurity to be introduced into the substrate so that a first one of doses in a central portion and in a peripheral portion of the substrate is greater than a second one of the doses during an initial period of doping, with the second dose becoming greater than the first dose thereafter.

    摘要翻译: 通过将衬底暴露于由真空室中含有杂质的气体产生的等离子体,在衬底的表面中形成杂质区。 在该过程中,相对于要引入衬底的杂质的剂量设置等离子体掺杂条件,使得在衬底的中心部分和周边部分中的第一个剂量大于第二个 在掺杂的初始阶段期间的剂量,其中第二剂量变得大于其后的第一剂量。

    Method of manufacturing a thin-film magnetic head
    54.
    发明授权
    Method of manufacturing a thin-film magnetic head 有权
    制造薄膜磁头的方法

    公开(公告)号:US07721415B2

    公开(公告)日:2010-05-25

    申请号:US11406268

    申请日:2006-04-19

    IPC分类号: G11B5/127 H04R31/00

    摘要: A thin-film magnetic head is manufactured as follows. First, a base insulating layer having a magnetic pole forming depression sunken into a form corresponding to the main magnetic pole layer is formed, a stop film for CMP is formed such as to fill the magnetic pole forming depression, and then a magnetic layer is formed on the stop film. Next, the magnetic layer is separated by forming a separation groove substantially surrounding the magnetic pole forming depression on the outside thereof, and thus separated magnetic layer is formed with a cover insulating film adapted to cover the whole upper face. The surface is polished by CMP until the stop film is exposed, so that the part of magnetic layer remaining on the inside of the magnetic pole forming depression is used as the main magnetic pole layer. Further, a recording gap layer, a write shield layer, and a thin-film coil are formed.

    摘要翻译: 如下制造薄膜磁头。 首先,形成具有凹陷形成为与主磁极层对应的形状的磁极形成凹部的基底绝缘层,形成用于填充磁极形成凹部的用于CMP的停止膜,然后形成磁性层 在停止电影。 接下来,通过在其外侧形成基本上围绕磁极形成凹部的分离槽来分离磁性层,由此分离的磁性层形成有覆盖整个上表面的覆盖绝缘膜。 通过CMP抛光表面,直到停止膜露出,使得残留在磁极形成凹部内侧的磁性层的一部分被用作主磁极层。 此外,形成记录间隙层,写入屏蔽层和薄膜线圈。

    Valve device, liquid supply apparatus, and liquid ejection apparatus
    56.
    发明授权
    Valve device, liquid supply apparatus, and liquid ejection apparatus 有权
    阀装置,液体供给装置和液体喷射装置

    公开(公告)号:US07703897B2

    公开(公告)日:2010-04-27

    申请号:US11546281

    申请日:2006-10-12

    申请人: Hiroyuki Ito

    发明人: Hiroyuki Ito

    IPC分类号: B41J2/175

    摘要: A valve device for opening and closing a valve including a movable valve member, the valve device comprising: an operation member movable toward and away from the valve, the operation member moving the valve member with magnetic force when moving toward or away from the valve to open or close the valve, wherein the operation member is formed to move in a predetermined direction including a first component representing magnitude of a vector in a movement direction of the valve member and a second component representing magnitude of a vector in a direction perpendicular to the movement direction of the valve member, with the first component being greater than the second component.

    摘要翻译: 一种用于打开和关闭包括可移动阀构件的阀的阀装置,所述阀装置包括:可朝向和远离所述阀移动的操作构件,所述操作构件在朝向或远离所述阀移动时以磁力移动所述阀构件, 打开或关闭所述阀,其中所述操作构件形成为沿预定方向移动,所述方向包括表示所述阀构件的运动方向上的向量的大小的第一分量,以及表示与所述阀构件的垂直于所述阀构件的方向上的矢量的大小的第二分量 阀构件的移动方向,其中第一构件大于第二构件。

    SOIL TREATING AGENT OR SEED TREATING AGENT COMPRISING QUINOLINE COMPOUNDS OR SALTS THEREOF AS ACTIVE INGREDIENT,OR METHOD FOR PREVENTING PLANT DISEASES BY USING THE SAME
    57.
    发明申请
    SOIL TREATING AGENT OR SEED TREATING AGENT COMPRISING QUINOLINE COMPOUNDS OR SALTS THEREOF AS ACTIVE INGREDIENT,OR METHOD FOR PREVENTING PLANT DISEASES BY USING THE SAME 有权
    含有喹啉化合物或其作为活性成分的盐的土壤处理剂或种子处理剂或使用其预防植物病害的方法

    公开(公告)号:US20090325998A1

    公开(公告)日:2009-12-31

    申请号:US12312896

    申请日:2007-11-30

    IPC分类号: A01N43/42 A01P15/00

    CPC分类号: A01N43/42 A01N43/90

    摘要: A soil treating agent or a seed treating agent having excellent prevention effects against various plant pathogens (particularly against rice blast) is provided. A soil treating agent or seed treating agent, comprising one or more compounds of the general formula (Ia), (Ib) or (Ic): (wherein R1, R2: C1-C6 alkyl (may be substituted), aryl (may be substituted), heteroaryl (may be substituted), aralkyl (may be substituted) and the like; R3, R4: H, C1-C6 alkyl (may be substituted), halogen, C1-C6 alkoxy and the like; X: halogen, C1-C6 alkyl (may be substituted), C2-C6 alkenyl (may be substituted), C2-C6 alkynyl (may be substituted), aryl (may be substituted), heteroaryl (may be substituted), C1-C6 alkoxy and the like; Y: halogen, C1-C6 alkyl, C1-C6 alkoxy, OH; n: 0 to 4; m: 0 to 6) or salts thereof as an active ingredient.

    摘要翻译: 提供对各种植物病原体(特别是稻瘟病)具有优异的预防效果的土壤处理剂或种子处理剂。 一种土壤处理剂或种子处理剂,其包含一种或多种通式(Ia),(Ib)或(Ic)的化合物:(其中R 1,R 2:C 1 -C 6烷基(可被取代),芳基(可以是 取代),杂芳基(可以被取代),芳烷基(可以被取代)等; R3,R4:H,C1-C6烷基(可以被取代),卤素,C1-C6烷氧基等; X:卤素, C 1 -C 6烷基(可以被取代),C 2 -C 6烯基(可以被取代),C 2 -C 6炔基(可以被取代),芳基(可以被取代),杂芳基 Y:卤素,C 1 -C 6烷基,C 1 -C 6烷氧基,OH; n:0〜4; m:0〜6)或其盐作为有效成分。

    Method and apparatus for plasma processing
    59.
    发明授权
    Method and apparatus for plasma processing 失效
    等离子体处理方法和装置

    公开(公告)号:US07601619B2

    公开(公告)日:2009-10-13

    申请号:US11887821

    申请日:2006-04-04

    摘要: A method and an apparatus for plasma processing which can accurately monitor an ion current applied to the surface of a sample. Predetermined gas is exhausted via an exhaust port by a turbo-molecular pump while introducing the gas within the vacuum chamber from a gas supply device, and the pressure within the vacuum chamber is kept at a predetermined value by a pressure regulating valve. A high-frequency power supply for a plasma source supplies a high-frequency power to a coil provided near a dielectric window to generate inductively coupled plasma within the vacuum chamber. A high-frequency power supply for the sample electrode for supplying the high-frequency power to the sample electrode is provided. A matching circuit for the sample electrode and a high-frequency sensor are provided between the sample electrode high-frequency power supply and the sample electrode. An ion current applied to the surface of a sample can be accurately monitored buy using the high-frequency sensor and an arithmetic device.

    摘要翻译: 一种用于等离子体处理的方法和装置,其可以精确地监测施加到样品表面的离子电流。 通过涡轮分子泵通过排气口排出预定气体,同时从气体供给装置引入真空室内的气体,并通过压力调节阀将真空室内的压力保持在预定值。 用于等离子体源的高频电源为设置在电介质窗附近的线圈提供高频电力,以在真空室内产生电感耦合等离子体。 提供了用于向样品电极提供高频电力的样品电极的高频电源。 在样品电极高频电源和样品电极之间设置用于样品电极和高频传感器的匹配电路。 使用高频传感器和运算装置,可以精确地监视施加到样品表面的离子电流。

    PLASMA DOPING METHOD
    60.
    发明申请
    PLASMA DOPING METHOD 有权
    等离子喷涂方法

    公开(公告)号:US20090233427A1

    公开(公告)日:2009-09-17

    申请号:US12158852

    申请日:2007-11-13

    IPC分类号: H01L21/265

    CPC分类号: H01L21/2236

    摘要: An impurity region is formed in a surface of a substrate by exposing the substrate to a plasma generated from a gas containing an impurity in a vacuum chamber. In this process, a plasma doping condition is set with respect to a dose of the impurity to be introduced into the substrate so that a first one of doses in a central portion and in a peripheral portion of the substrate is greater than a second one of the doses during an initial period of doping, with the second dose becoming greater than the first dose thereafter.

    摘要翻译: 通过将衬底暴露于由真空室中含有杂质的气体产生的等离子体,在衬底的表面中形成杂质区。 在该过程中,相对于要引入衬底的杂质的剂量设置等离子体掺杂条件,使得在衬底的中心部分和周边部分中的第一个剂量大于第二个 在掺杂的初始阶段期间的剂量,其中第二剂量变得大于其后的第一剂量。