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93 条记录 (耗时 0.03 秒)

    Compression system and air conditioning system
    52.
    发明授权
    Compression system and air conditioning system 有权
    压缩系统和空调系统

    公开(公告)号：US07802440B2

    公开(公告)日：2010-09-28

    申请号：US11839630

    申请日：2007-08-16

    申请人： Song Choi ,  Young Min Kim ,  Baik Young Chung

    发明人： Song Choi ,  Young Min Kim ,  Baik Young Chung

    IPC分类号： F25B31/00 ,  F25B1/10 ,  F04B1/12 ,  F04B1/00

    CPC分类号： F25B1/10 ,  F25B31/002 ,  F25B45/00 ,  F25B2400/13 ,  F25B2400/23

    摘要： A compression system for an air conditioning system includes first and second compressors. The first compressor includes a first compression chamber in which a fluid introduced from an outside of the first compressor is compressed, and a first case defining a first space into which the fluid compressed in the first compression chamber is introduced. The second compressor includes a second case defining a second space into which the fluid compressed in the first compressor is introduced, and a second compression chamber in which the fluid introduced from the second space is compressed. The second compressor operates independently of the first compressor, and a connecting line connects the first and second compressors.

    摘要翻译： 一种用于空调系统的压缩系统包括第一和第二压缩机。 第一压缩机包括第一压缩室，其中从第一压缩机的外部引入的流体被压缩，以及限定第一空间的第一壳体，第一压缩室中压缩的流体被引入到该第一空间中。 第二压缩机包括限定在第一压缩机中被压缩的流体被引入的第二空间的第二壳体和从第二空间引入的流体被压缩的第二压缩室。 第二压缩机独立于第一压缩机运行，连接线连接第一和第二压缩机。

    ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND FABRICATION THEREOF
    54.
    发明申请
    ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND FABRICATION THEREOF 有权
    有机薄膜晶体管基板及其制造方法

    公开(公告)号：US20080012024A1

    公开(公告)日：2008-01-17

    申请号：US11777174

    申请日：2007-07-12

    申请人： Keun Kyu SONG ,  Seung Hwan Cho ,  Bo Sung Kim ,  Young Min Kim ,  Jung Han Shin

    发明人： Keun Kyu SONG ,  Seung Hwan Cho ,  Bo Sung Kim ,  Young Min Kim ,  Jung Han Shin

    IPC分类号： H01L29/04 ,  H01L21/84

    CPC分类号： H01L27/3274 ,  H01L27/3276 ,  H01L51/0545 ,  H01L51/102

    摘要： An organic thin film transistor (“TFT”) substrate for facilitating control of the turn-on and turn-off actions of the TFT. The organic TFT substrate includes a gate line on a substrate, a pixel electrode in the same plane as the gate line, a data line insulated from the gate line, an organic TFT including a gate electrode connected to the gate line, a source electrode connected to the data line and insulated from the gate line, a drain electrode connected to the pixel electrode and insulated from the gate electrode, and an organic semiconductor layer contacting each of the source and drain electrodes, and a gate-insulating layer on the gate line and the gate electrode.

    摘要翻译： 有机薄膜晶体管（“TFT”）基板，用于控制TFT的导通和关断动作。 有机TFT基板包括在基板上的栅极线，与栅极线相同的平面中的像素电极，与栅极线绝缘的数据线，包括连接到栅极线的栅电极的有机TFT，连接到源电极 与栅极线绝缘的绝缘电极，连接到像素电极并与栅电极绝缘的漏电极以及接触源极和漏极之间的有机半导体层以及栅极线上的栅极绝缘层 和栅电极。

    Nonreducible dielectric ceramic composition
    55.
    发明授权
    Nonreducible dielectric ceramic composition 失效
    不可还原电介质陶瓷组合物

    公开(公告)号：US06790801B2

    公开(公告)日：2004-09-14

    申请号：US10326971

    申请日：2002-12-24

    申请人： Young Min Kim ,  Jong Hee Kim ,  Dong Sook Shin ,  Young Tae Moon

    发明人： Young Min Kim ,  Jong Hee Kim ,  Dong Sook Shin ,  Young Tae Moon

    IPC分类号： C04B3549

    CPC分类号： C04B35/49 ,  B32B18/00 ,  B32B2311/22 ,  C04B2235/3205 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3217 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3267 ,  C04B2235/3418 ,  C04B2235/36 ,  C04B2235/652 ,  C04B2235/6584 ,  C04B2235/786 ,  C04B2237/405 ,  C04B2237/704 ,  H01G4/1245

    摘要： Disclosed is a nonreducible dielectric composition. Provided is a highly reliable TC based dielectric composition prepared by adding a sintering additive having excellent qualities to a conventional (Ca1-xSrx)m(Zr1-yTiy)O3 based dielectric composition, so that it can be sintered under a reducing atmosphere to be used in formation of a nickel electrode, can be sintered at a low temperature of less than 1,250° C., and has a small dielectric loss and a high resistivity. The composition of the present invention includes a nonreducible dielectric composition comprising a main component expressed by the general formula, (Ca1-xSrx)m(Zr1-yTiy)O3, which has the ranges of 0≦x≦1, 0.09≦y≦0.35, and 0.7≦m≦1.05; and 0.5-10 wt % of a minor component expressed by the general formula, aMnO-bSiO2-dR1O-eR2O2 (a+b+d+e=100, R1 is at least one element selected from the group consisting of Mg, Ca, Sr and Ba, and R2 is at least one element of Zr and Ti), which has the ranges of 20≦a≦60, 10≦b≦65, and 0≦(d+e)≦65.

    摘要翻译： 公开了不可还原的电介质组合物。 提供了通过向常规（Ca1-xSrx）m（Zr1-yTiy）O3系电介质组合物添加具有优良品质的烧结添加剂而制备的高度可靠的TC基介电组合物，使得其可以在还原气氛下烧结以使用 在镍电极的形成中，可以在小于1250℃的低温下烧结，并且具有小的介电损耗和高电阻率。 本发明的组合物包括不可还原电介质组合物，其包含由通式表示的主要组分（Ca1-xSrx）m（Zr1-yTiO）O3，其范围为0≤x≤1,0.09< y <= 0.35，0.7 <= m <= 1.05; 和由通式aMnO-bSiO2-dR1O-eR2O2（a + b + d + e = 100表示​​）的次要组分的0.5-10重量％，R1是选自Mg，Ca， Sr和Ba，R2是至少一种Zr和Ti的元素），其范围为20 <= a <= 60，10 <= b <= 65，0 <=（d + e）= 65 。

    Chip type thin film capacitor, and manufacturing method therefor
    56.
    发明授权
    Chip type thin film capacitor, and manufacturing method therefor 失效
    片式薄膜电容器及其制造方法

    公开(公告)号：US06236102B1

    公开(公告)日：2001-05-22

    申请号：US09207182

    申请日：1998-12-08

    申请人： Young Min Kim ,  Bang Won Oh

    发明人： Young Min Kim ,  Bang Won Oh

    IPC分类号： H01L2972

    CPC分类号： H01G4/232 ,  H01G4/06

    摘要： A chip type thin film capacitor is disclosed. The contact faces between inner electrodes and outer electrodes are expanded. That is, one end portion of each of first and second electrodes 220 and 240 are exposed to the outside, and the upper faces of the first and second electrodes 220 and 240 are etched so that the upper faces would be exposed to the outside. Thus first and second outer electrode connection portions 260 and 270 are formed, and terminal electrodes 280 are formed thereon. Then first and second outer electrodes 290 and 300 are formed thereupon, and a protecting layer 310 is formed by using polyimide upon a second dielectric layer 250.

    摘要翻译： 公开了一种片式薄膜电容器。 内电极和外电极之间的接触面扩大。 也就是说，第一和第二电极220和240中的每一个的一个端部暴露于外部，并且蚀刻第一和第二电极220和240的上表面，使得上表面暴露于外部。 因此，形成第一和第二外部电极连接部260和270，并且在其上形成端子电极280。 然后在其上形成第一外电极290和第二外电极300，并且在第二电介质层250上使用聚酰亚胺形成保护层310。

    Data loading and processing system, and method therefor
    57.
    发明授权
    Data loading and processing system, and method therefor 有权

    公开(公告)号：US11797513B2

    公开(公告)日：2023-10-24

    申请号：US17921284

    申请日：2021-05-26

    申请人： BCORE ,  Young Min Kim

    发明人： Young Min Kim ,  Woo Suk Jeong ,  Ji Young Park

    IPC分类号： G06F16/23 ,  G06F16/22 ,  G06F16/25

    CPC分类号： G06F16/2358 ,  G06F16/2282 ,  G06F16/2365 ,  G06F16/252

    摘要： A data loading and processing system, and a method therefor are disclosed. In the present invention, a collection server confirms the state of target resources before collecting data, determines a data collecting and loading method for the corresponding resources on the basis of the confirmed state of the resources, transmits a data collection request to a data server, collects the data from the data server through the determined data collecting and loading method, and loads the collected data in a big data platform so as to collect and load data by an optimum data collecting and loading method according to the current state of objects to be collected and objects to be loaded, and thus can increase overall system operation efficiency.

    MAGNESIUM ALLOY WITH EXCELLENT IGNITION RESISTANCE AND MECHANICAL PROPERTIES, AND METHOD OF MANUFACTURING THE SAME
    60.
    发明申请
    MAGNESIUM ALLOY WITH EXCELLENT IGNITION RESISTANCE AND MECHANICAL PROPERTIES, AND METHOD OF MANUFACTURING THE SAME 有权
    具有良好的耐点火性和机械性能的镁合金及其制造方法

    公开(公告)号：US20130280121A1

    公开(公告)日：2013-10-24

    申请号：US13511015

    申请日：2011-10-04

    申请人： Young Min Kim ,  Ha Sik Kim ,  Bong Sun You ,  Chang Dong Yim

    发明人： Young Min Kim ,  Ha Sik Kim ,  Bong Sun You ,  Chang Dong Yim

    IPC分类号： C22C23/02 ,  B22D25/00

    CPC分类号： C22C23/02 ,  B22D21/04 ,  B22D25/00 ,  C22C1/02

    摘要： A magnesium alloy that forms a stable protective film on the surface of molten metal, having excellent ignition resistance restricting natural ignition of a chip thereof as well as having excellent strength and ductility, so that the Mg alloy can be melted and cast in the air or a common inert atmosphere. The magnesium alloy includes, by weight, 7.0% or greater but less than 11% of Al, 0.05% to 2.0% of Ca, 0.05% to 2.0% of Y, greater than 0% but not greater than 6.0% of Zn, and the balance of Mg, and the other unavoidable impurities. The total content of the Ca and the Y is equal to or greater than 0.1% but less than 2.5% of the total weight of the magnesium alloy.

    摘要翻译： 在熔融金属表面形成稳定的保护膜的镁合金，具有优异的耐点火性，限制其芯片的自然点燃以及具有优异的强度和延展性，使得镁合金可以在空气中熔化和铸造，或 常见的惰性气氛。 镁合金按重量计含有7.0％以上但小于11％的Al，0.05％〜2.0％的Ca，0.05％〜2.0％的Y，大于0％但不高于6.0％的Zn，以及 Mg的平衡和其他不可避免的杂质。 Ca和Y的总含量等于或大于镁合金总重量的0.1％但小于2.5％。