公开(公告)号：US06236102B1

公开(公告)日：2001-05-22

申请号：US09207182

申请日：1998-12-08

申请人： Young Min Kim ,  Bang Won Oh

发明人： Young Min Kim ,  Bang Won Oh

IPC分类号： H01L2972

CPC分类号： H01G4/232 ,  H01G4/06

摘要： A chip type thin film capacitor is disclosed. The contact faces between inner electrodes and outer electrodes are expanded. That is, one end portion of each of first and second electrodes 220 and 240 are exposed to the outside, and the upper faces of the first and second electrodes 220 and 240 are etched so that the upper faces would be exposed to the outside. Thus first and second outer electrode connection portions 260 and 270 are formed, and terminal electrodes 280 are formed thereon. Then first and second outer electrodes 290 and 300 are formed thereupon, and a protecting layer 310 is formed by using polyimide upon a second dielectric layer 250.

摘要翻译： 公开了一种片式薄膜电容器。 内电极和外电极之间的接触面扩大。 也就是说，第一和第二电极220和240中的每一个的一个端部暴露于外部，并且蚀刻第一和第二电极220和240的上表面，使得上表面暴露于外部。 因此，形成第一和第二外部电极连接部260和270，并且在其上形成端子电极280。 然后在其上形成第一外电极290和第二外电极300，并且在第二电介质层250上使用聚酰亚胺形成保护层310。

公开(公告)号：US07906785B2

公开(公告)日：2011-03-15

申请号：US11585212

申请日：2006-10-24

申请人： Doo Go Baik ,  Bang Won Oh ,  Tae Jun Kim

发明人： Doo Go Baik ,  Bang Won Oh ,  Tae Jun Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/145 ,  H01L33/0033 ,  H01L33/32

摘要： A vertical nitride semiconductor light emitting device and a manufacturing method thereof are provided. In the device, an ohmic contact layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor layer and an n-electrode are sequentially formed on a conductive substrate. At least one of a surface of the p-type nitride semiconductor layer contacting the ohmic contact layer and a surface of the n-type nitride layer contacting the n-electrode has a high resistance area of damaged nitride single crystal in a substantially central portion thereof. The high resistance area has a Schottky junction with at least one of the ohmic contact layer and the n-electrode.

摘要翻译： 提供了一种垂直氮化物半导体发光器件及其制造方法。 在该器件中，在导电性基板上依次形成欧姆接触层，p型氮化物半导体层，有源层，n型氮化物半导体层和n电极。 接触欧姆接触层的p型氮化物半导体层的表面和与n电极接触的n型氮化物层的表面中的至少一个在其基本中心部分具有高的受损氮化物单晶的电阻面积 。 高电阻区域具有与欧姆接触层和n电极中的至少一个的肖特基结。

公开(公告)号：US07078256B2

公开(公告)日：2006-07-18

申请号：US10875321

申请日：2004-06-25

申请人： Yung Ho Ryu ,  Kee Jeong Yang ,  Bang Won Oh ,  Jin Sub Park ,  Young Hoon Kim

发明人： Yung Ho Ryu ,  Kee Jeong Yang ,  Bang Won Oh ,  Jin Sub Park ,  Young Hoon Kim

IPC分类号： H01L21/00

CPC分类号： H01L33/007

摘要： A nitride semiconductor LED improved in lighting efficiency and a fabrication method thereof, in which an n-doped semiconductor layer is formed on a substrate. An active layer is formed on the n-doped semiconductor layer to expose at least a partial area of the n-doped semiconductor layer. A p-doped semiconductor layer is formed on the active layer. A p+-doped semiconductor layer is formed on the p-doped semiconductor layer. An n+-doped semiconductor layer is formed in at least a partial upper region of the p+-doped semiconductor layer via n-dopant ion implantation. The n+-doped semiconductor layer cooperates with an underlying partial region of the p+-doped semiconductor layer to realize a reverse bias tunneling junction. Also, an upper n-doped semiconductor layer is formed on the n+-doped semiconductor layer to realize lateral current spreading. The invention can improve lighting efficiency by using the reverse bias tunneling junction and/or the lateral current spreading.

公开(公告)号：US06703677B2

公开(公告)日：2004-03-09

申请号：US10231029

申请日：2002-08-30

申请人： Kyung Ho Lee ,  Jeong Ho Yoon ,  Bang Won Oh ,  Si Young Yang ,  Jong Hwa Lee

发明人： Kyung Ho Lee ,  Jeong Ho Yoon ,  Bang Won Oh ,  Si Young Yang ,  Jong Hwa Lee

IPC分类号： H01L2714

CPC分类号： H01S5/02212 ,  H01S5/02248 ,  H01S5/02272 ,  Y10S257/918

摘要： Disclosed is a submount integrated photodiode package with an improved metal layer configuration and laser diode package using the same. In particular, a unitary laser diode of the invention provides a light receiving area overlying a semiconductor substrate to correspond to a radiation area of light emitted from a laser diode so as to reduce chip size in respect to a conventional one while maintaining a monitoring current identical to the conventional one as well as improve heat-radiating features. The invention provides a unitary laser diode package which comprises a light receiving area overlying a semiconductor substrate and having the same configuration as a radiation area of emission light from the laser diode and a metal layer adjacent to the light receiving area.

摘要翻译： 公开了一种具有改进的金属层配置和使用其的激光二极管封装的基座集成光电二极管封装。 特别地，本发明的单一激光二极管提供了覆盖半导体衬底的光接收区域，以对应于从激光二极管发射的光的辐射面积，以便相对于常规光源减小芯片尺寸，同时保持监视电流相同 以及改善散热特征。 本发明提供了一种单一的激光二极管封装，其包括覆盖半导体衬底并具有与来自激光二极管的发射光的辐射面积和与光接收区域相邻的金属层的相同配置的光接收区域。

公开(公告)号：US07695989B2

公开(公告)日：2010-04-13

申请号：US12406540

申请日：2009-03-18

申请人： Doo Go Baik ,  Bang Won Oh ,  Seok Beom Choi ,  Su Yeol Lee

发明人： Doo Go Baik ,  Bang Won Oh ,  Seok Beom Choi ,  Su Yeol Lee

IPC分类号： H01L21/00

CPC分类号： H01L33/14 ,  H01L33/02 ,  H01L33/32

摘要： A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED can prevent the damage of an n-type GaN layer contacting an n-type electrode, thereby stably securing the contact resistance of the n-electrode. The vertical GaN-based LED includes: a support layer; a p-electrode formed on the support layer; a p-type GaN layer formed on the p-electrode; an active layer formed on the p-type GaN layer; an n-type GaN layer for an n-type electrode contact, formed on the active layer; an etch stop layer formed on the n-type GaN layer to expose a portion of the n-type GaN layer; and an n-electrode formed on the n-type GaN layer exposed by the etch stop layer.

摘要翻译： 提供了一种垂直GaN基LED及其制造方法。 垂直GaN基LED可以防止与n型电极接触的n型GaN层的损坏，从而稳定地确保n电极的接触电阻。 垂直GaN基LED包括：支撑层; 形成在支撑层上的p电极; 形成在p电极上的p型GaN层; 形成在p型GaN层上的有源层; 在有源层上形成用于n型电极接触的n型GaN层; 形成在所述n型GaN层上以暴露所述n型GaN层的一部分的蚀刻停止层; 以及形成在由蚀刻停止层露出的n型GaN层上的n电极。

公开(公告)号：US07462876B2

公开(公告)日：2008-12-09

申请号：US11584503

申请日：2006-10-23

申请人： Sang Heon Han ,  Bang Won Oh ,  Je Won Kim ,  Hyun Wook Shim ,  Joong Seo Kang ,  Dong Ju Lee

发明人： Sang Heon Han ,  Bang Won Oh ,  Je Won Kim ,  Hyun Wook Shim ,  Joong Seo Kang ,  Dong Ju Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/04 ,  H01L33/32

摘要： Disclosed herein is a nitride semiconductor light emitting device, which is improved in luminance and reliability. The light emitting device, comprises an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially formed on a substrate, an n-side electrode formed on a portion of an upper surface of the n-type nitride semiconductor layer, and at least one intermediate layer formed between the substrate and the n-type nitride semiconductor layer. The intermediate layer has a multilayer structure of three or more layers having different band-gaps, and is positioned below the n-side electrode.

摘要翻译： 本文公开了一种氮化物半导体发光器件，其亮度和可靠性得到改善。 发光器件包括依次形成在衬底上的n型氮化物半导体层，有源层和p型氮化物半导体层，形成在n型氮化物的上表面的一部分上的n侧电极 半导体层以及形成在基板和n型氮化物半导体层之间的至少一个中间层。 中间层具有三层以上具有不同带隙的层的多层结构，位于n侧电极的下方。

公开(公告)号：US20070145406A1

公开(公告)日：2007-06-28

申请号：US11584503

申请日：2006-10-23

申请人： Sang Heon Han ,  Bang Won Oh ,  Je Won Kim ,  Hyun Wook Shim ,  Joong Seo Kang ,  Dong Ju Lee

发明人： Sang Heon Han ,  Bang Won Oh ,  Je Won Kim ,  Hyun Wook Shim ,  Joong Seo Kang ,  Dong Ju Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/04 ,  H01L33/32

摘要： Disclosed herein is a nitride semiconductor light emitting device, which is improved in luminance and reliability. The light emitting device, comprises an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially formed on a substrate, an n-side electrode formed on a portion of an upper surface of the n-type nitride semiconductor layer, and at least one intermediate layer formed between the substrate and the n-type nitride semiconductor layer. The intermediate layer has a multilayer structure of three or more layers having different band-gaps, and is positioned below the n-side electrode.

摘要翻译： 本文公开了一种氮化物半导体发光器件，其亮度和可靠性得到改善。 发光器件包括依次形成在衬底上的n型氮化物半导体层，有源层和p型氮化物半导体层，形成在n型氮化物的上表面的一部分上的n侧电极 半导体层以及形成在基板和n型氮化物半导体层之间的至少一个中间层。 中间层具有三层以上具有不同带隙的层的多层结构，位于n侧电极的下方。

公开(公告)号：US07151045B2

公开(公告)日：2006-12-19

申请号：US10810634

申请日：2004-03-29

申请人： Ju Hyun Kim ,  Bang Won Oh

发明人： Ju Hyun Kim ,  Bang Won Oh

IPC分类号： H01L21/46 ,  H01L21/78 ,  H01L21/301

CPC分类号： B28D5/00 ,  H01L21/78 ,  H01L33/0095

摘要： A method for singulating a sapphire wafer, provided with semiconductor elements formed thereon, into unit chips includes (a) grinding a rear surface of the sapphire wafer so that the sapphire wafer has a designated thickness; (b) lapping the rear surface of the ground sapphire wafer so that the sapphire wafer has a designated thickness; (c) dry-etching the rear surface of the lapped sapphire wafer so that the sapphire wafer has a uniform thickness; and (d) scribing the rear surface of the dry-etched sapphire wafer.

摘要翻译： 将形成有半导体元件的蓝宝石晶片分离成单元芯片的方法包括：（a）研磨蓝宝石晶片的后表面，使得蓝宝石晶片具有指定厚度; （b）研磨蓝宝石晶片的后表面，使得蓝宝石晶片具有指定的厚度; （c）对研磨的蓝宝石晶片的后表面进行干蚀刻，以使蓝宝石晶片具有均匀的厚度; 和（d）刻划干蚀刻蓝宝石晶片的后表面。

公开(公告)号：US07012284B2

公开(公告)日：2006-03-14

申请号：US10837780

申请日：2004-05-04

申请人： Seok Beom Choi ,  Bang Won Oh ,  Hee Seok Choi

发明人： Seok Beom Choi ,  Bang Won Oh ,  Hee Seok Choi

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/025

摘要： Disclosed herein is a nitride semiconductor light emitting device. The nitride semiconductor light emitting device comprises an n-type nitride semiconductor layer on a substrate, an active layer formed on the n-type nitride semiconductor layer so that a portion of the n-type nitride semiconductor layer is exposed, a p-type nitride semiconductor layer formed on the active layer, a high-concentration dopant area on the p-type nitride semiconductor layer, a counter doping area on the high-concentration dopant areas, an n-side electrode formed on an exposed portion of the n-type nitride semiconductor layer, and a p-side electrode formed on the counter doping area. A satisfactory ohmic contact for the p-side electrode is provided by an ion implantation process and heat treatment.

摘要翻译： 这里公开了一种氮化物半导体发光器件。 氮化物半导体发光器件包括在衬底上的n型氮化物半导体层，形成在n型氮化物半导体层上的有源层，以使n型氮化物半导体层的一部分露出，p型氮化物 形成在有源层上的半导体层，p型氮化物半导体层上的高浓度掺杂剂区域，高浓度掺杂剂区域上的相对掺杂区域，形成在n型氮化物半导体层的暴露部分上的n侧电极 氮化物半导体层和形成在反掺杂区域上的p侧电极。 通过离子注入工艺和热处理提供了用于p侧电极的令人满意的欧姆接触。

公开(公告)号：US08405103B2

公开(公告)日：2013-03-26

申请号：US12182383

申请日：2008-07-30

申请人： Dong Yul Lee ,  Seong Ju Park ,  Min Ki Kwon ,  Ja Yeon Kim ,  Yong Chun Kim ,  Bang Won Oh ,  Seok Min Hwang ,  Je Won Kim

发明人： Dong Yul Lee ,  Seong Ju Park ,  Min Ki Kwon ,  Ja Yeon Kim ,  Yong Chun Kim ,  Bang Won Oh ,  Seok Min Hwang ,  Je Won Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L2933/0083

摘要： There is provided a photonic crystal light emitting device including: a light emitting structure including first and second conductivity type semiconductor layers and an active layer interposed therebetween; a transparent electrode layer formed on the second conductivity type semiconductor layer, the transparent electrode layer having a plurality of holes arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the transparent electrode layer includes a photonic crystal structure; and first and second electrode electrically connected to the first conductivity type semiconductor layer and the transparent electrode layer, respectively. The photonic crystal light emitting device has a transparent electrode layer formed of a photonic crystal structure defined by minute holes, thereby improved in light extraction efficiency.

摘要翻译： 提供了一种光子晶体发光器件，包括：发光结构，包括第一和第二导电类型半导体层和插入其间的有源层; 形成在所述第二导电型半导体层上的透明电极层，所述透明电极层具有以预定尺寸和周期排列的多个孔，以形成从所述有源层发射的光的光子带隙，由此所述透明电极层 包括光子晶体结构; 以及分别与第一导电类型半导体层和透明电极层电连接的第一和第二电极。 光子晶体发光器件具有由微孔限定的光子晶体结构形成的透明电极层，从而提高光提取效率。