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    Method of direct deposition of polycrystalline silicon
    52.
    发明授权
    Method of direct deposition of polycrystalline silicon 有权
    直接沉积多晶硅的方法

    公开(公告)号：US07521341B2

    公开(公告)日：2009-04-21

    申请号：US11270862

    申请日：2005-11-09

    Applicant: Liang-Tang Wang ,  Chi-Lin Chen ,  I-Hsuan Peng ,  Jung-Fang Chang ,  Chin-Jen Huang

    Inventor： Liang-Tang Wang ,  Chi-Lin Chen ,  I-Hsuan Peng ,  Jung-Fang Chang ,  Chin-Jen Huang

    IPC: H01L21/36

    CPC classification number: H01L21/02532 ,  C23C16/0272 ,  C23C16/24 ,  C23C16/5096 ,  H01L21/02422 ,  H01L21/0262 ,  H01L27/1214

    Abstract: A method for forming a polysilicon film in a plasma-assisted chemical vapor deposition (CVD) system including a chamber in which a first electrode and a second electrode spaced apart from the first electrode are provided comprises providing a substrate on the second electrode, the substrate including a surface exposed to the first electrode, applying a first power to the first electrode for generating a plasma in the chamber, applying a second power to the second electrode during a nucleation stage of the polysilicon film for ion bombarding the surface of the substrate, and flowing an erosive gas into the chamber.

    Abstract translation: 一种在等离子体辅助化学气相沉积（CVD）系统中形成多晶硅膜的方法，包括：设置有与第一电极间隔开的第一电极和第二电极的腔室，包括在第二电极上设置衬底， 包括暴露于第一电极的表面，向第一电极施加第一功率以在腔室中产生等离子体，在用于离子轰击衬底表面的多晶硅膜的成核阶段期间，向第二电极施加第二功率， 并将侵蚀性气体流入室内。

    Fabrication process of memory cell
    53.
    发明授权
    Fabrication process of memory cell 有权
    记忆体的制作过程

    公开(公告)号：US07445972B2

    公开(公告)日：2008-11-04

    申请号：US11963854

    申请日：2007-12-24

    Applicant: Hung-Tse Chen ,  Chi-Lin Chen ,  Yu-Cheng Chen

    Inventor： Hung-Tse Chen ,  Chi-Lin Chen ,  Yu-Cheng Chen

    IPC: H01L21/00

    CPC classification number: H01L29/78696 ,  G11C16/0466 ,  H01L21/28282 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/4234 ,  H01L29/66757 ,  H01L29/66833 ,  H01L29/78675 ,  H01L29/792

    Abstract: A memory cell suitable for being disposed over a substrate is provided. The memory cell includes a poly-silicon island, a first dielectric layer, a trapping layer, a second dielectric layer and a control gate. The poly-silicon island is disposed on the substrate and includes a source region, a drain region and a channel region located between the source and drain regions. The channel region has a plurality of regularly arranged tips thereon. The first dielectric layer is disposed on the poly-silicon island. The trapping layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the trapping layer. The control gate is disposed on the second dielectric layer. The memory cell mentioned above can be integrated into the LTPS-LCD panel or OLED panel.

    Abstract translation: 提供了适于布置在基板上的存储单元。 存储单元包括多晶硅岛，第一介电层，俘获层，第二介质层和控制栅极。 多硅岛设置在衬底上，并且包括源极区，漏极区和位于源极和漏极区之间的沟道区。 通道区域在其上具有多个规则排列的尖端。 第一介电层设置在多晶硅岛上。 捕获层设置在第一介电层上。 第二介质层设置在捕获层上。 控制栅极设置在第二电介质层上。 上述存储单元可以集成到LTPS-LCD面板或OLED面板中。

    PIXEL STRUCTURE
    54.
    发明申请
    PIXEL STRUCTURE 有权
    像素结构

    公开(公告)号：US20080093604A1

    公开(公告)日：2008-04-24

    申请号：US11963853

    申请日：2007-12-24

    Applicant: Hung-Tse Chen ,  Chi-Lin Chen ,  Yu-Cheng Chen

    Inventor： Hung-Tse Chen ,  Chi-Lin Chen ,  Yu-Cheng Chen

    IPC: H01L29/786

    CPC classification number: H01L29/78696 ,  G11C16/0466 ,  H01L21/28282 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/4234 ,  H01L29/66757 ,  H01L29/66833 ,  H01L29/78675 ,  H01L29/792

    Abstract: A memory cell suitable for being disposed over a substrate is provided. The memory cell includes a poly-silicon island, a first dielectric layer, a trapping layer, a second dielectric layer and a control gate. The poly-silicon island is disposed on the substrate and includes a source region, a drain region and a channel region located between the source and drain regions. The channel region has a plurality of regularly arranged tips thereon. The first dielectric layer is disposed on the poly-silicon island. The trapping layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the trapping layer. The control gate is disposed on the second dielectric layer. The memory cell mentioned above can be integrated into the LTPS-LCD panel or OLED panel.

    Abstract translation: 提供了适于布置在基板上的存储单元。 存储单元包括多晶硅岛，第一介电层，俘获层，第二介质层和控制栅极。 多硅岛设置在衬底上，并且包括源极区，漏极区和位于源极和漏极区之间的沟道区。 通道区域在其上具有多个规则排列的尖端。 第一介电层设置在多晶硅岛上。 捕获层设置在第一介电层上。 第二介质层设置在捕获层上。 控制栅极设置在第二电介质层上。 上述存储单元可以集成到LTPS-LCD面板或OLED面板中。

    Method for manufacturing a flexible panel for a flat panel display
    56.
    发明授权
    Method for manufacturing a flexible panel for a flat panel display 有权
    制造平板显示器用柔性面板的方法

    公开(公告)号：US07297040B2

    公开(公告)日：2007-11-20

    申请号：US11517357

    申请日：2006-09-08

    Applicant: Jung-Fang Chang ,  Chich-Shang Chang ,  Chi-Lin Chen

    Inventor： Jung-Fang Chang ,  Chich-Shang Chang ,  Chi-Lin Chen

    IPC: H01J9/26

    CPC classification number: H01J9/241 ,  G02F1/133305 ,  G02F2001/13613 ,  H01J2217/492

    Abstract: A method for manufacturing a flexible panel is disclosed, which has the following steps. First, a first substrate having a plurality of functional switches or conducting lines thereon is provided. Then, a second substrate is bonded on the functional switches or conducting lines, and the first substrate is thinned to a predetermined thickness subsequently. Afterwards, a flexible third substrate is adhered on the first substrate, wherein the first substrate is sandwiched between the second substrate and the third substrate. Finally, the second substrate is removed.

    Abstract translation: 公开了一种制造柔性面板的方法，其具有以下步骤。 首先，提供具有多个功能开关或导线的第一基板。 然后，第二基板被接合在功能开关或导线上，并且第一基板随后变薄到预定厚度。 之后，将柔性第三基板粘附在第一基板上，其中第一基板夹在第二基板和第三基板之间。 最后，去除第二衬底。

    MEMORY CELL, PIXEL STRUCTURE AND FABRICATION PROCESS OF MEMORY CELL
    57.
    发明申请
    MEMORY CELL, PIXEL STRUCTURE AND FABRICATION PROCESS OF MEMORY CELL 有权
    MEMORY CELL，MEMORY CELL，PIXEL STRUCTURE AND BUABICATION PROCESS OF MEMORY CELL

    公开(公告)号：US20070099376A1

    公开(公告)日：2007-05-03

    申请号：US11308710

    申请日：2006-04-25

    Applicant: Hung-Tse Chen ,  Chi-Lin Chen ,  Yu-Cheng Chen

    Inventor： Hung-Tse Chen ,  Chi-Lin Chen ,  Yu-Cheng Chen

    IPC: H01L21/336

    CPC classification number: H01L29/78696 ,  G11C16/0466 ,  H01L21/28282 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/4234 ,  H01L29/66757 ,  H01L29/66833 ,  H01L29/78675 ,  H01L29/792

    Abstract: A memory cell suitable for being disposed over a substrate is provided. The memory cell includes a poly-silicon island, a first dielectric layer, a trapping layer, a second dielectric layer and a control gate. The poly-silicon island is disposed on the substrate and includes a source region, a drain region and a channel region located between the source and drain regions. The channel region has a plurality of regularly arranged tips thereon. The first dielectric layer is disposed on the poly-silicon island. The trapping layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the trapping layer. The control gate is disposed on the second dielectric layer. The memory cell mentioned above can be integrated into the LTPS-LCD panel or OLED panel.

    Abstract translation: 提供了适于布置在基板上的存储单元。 存储单元包括多晶硅岛，第一介电层，俘获层，第二介质层和控制栅极。 多硅岛设置在衬底上，并且包括源极区，漏极区和位于源极和漏极区之间的沟道区。 通道区域在其上具有多个规则排列的尖端。 第一介电层设置在多晶硅岛上。 捕获层设置在第一介电层上。 第二介质层设置在捕获层上。 控制栅极设置在第二电介质层上。 上述存储单元可以集成到LTPS-LCD面板或OLED面板中。

    Method of manufacturing a TFT array panel for a LCD
    58.
    发明授权
    Method of manufacturing a TFT array panel for a LCD 有权
    制造液晶显示器用TFT阵列面板的方法

    公开(公告)号：US07211371B2

    公开(公告)日：2007-05-01

    申请号：US10673326

    申请日：2003-09-30

    Applicant: Chi-Shen Lee ,  Yung-Fu Wu ,  Chi-Lin Chen ,  Cheng-Chung Chen

    Inventor： Chi-Shen Lee ,  Yung-Fu Wu ,  Chi-Lin Chen ,  Cheng-Chung Chen

    IPC: G03F7/00

    CPC classification number: G02F1/1368 ,  G02F1/136213 ,  H01L27/1255 ,  H01L27/1288

    Abstract: A method of manufacturing a TFT array panel for a LCD disclosers that the gate electrode wiring, transparent conducting electrode, and the first electrode of the storage capacity are formed while the first mask is processing. Then, the selective deposition method is used to process the growth of the first metal wiring. This, therefore, can reduce the numbers of the mask processes. Further, the metal deposition with photo-resist lift-off step is used to implement the layout of the second metal wiring for the consequent transmission lines in the manufacturing process. Finally, the process of the passivation layer deposition is used to implement associated circuits of a TFT array panel for a LCD. The TFT array panel for a LCD for manufacturing circuits can simplify the manufacturing process and reduce the cost.

    Abstract translation: 制造LCD阵列面板的方法公开了在第一掩模处理期间形成栅电极布线，透明导电电极和存储容量的第一电极。 然后，选择性沉积法用于处理第一金属布线的生长。 因此，这可以减少掩模处理的数量。 此外，利用光刻胶剥离工序进行金属蒸镀，以在制造工序中实现用于后续传输线的第二金属布线的布局。 最后，钝化层沉积的过程用于实现用于LCD的TFT阵列面板的相关电路。 用于制造电路的LCD的TFT阵列面板可以简化制造工艺并降低成本。

    Method for manufacturing a flexible panel for a flat panel display
    60.
    发明授权
    Method for manufacturing a flexible panel for a flat panel display 有权
    制造平板显示器用柔性面板的方法

    公开(公告)号：US07147531B2

    公开(公告)日：2006-12-12

    申请号：US10695810

    申请日：2003-10-30

    Applicant: Jung-Fang Chang ,  Chich-Shang Chang ,  Chi-Lin Chen

    Inventor： Jung-Fang Chang ,  Chich-Shang Chang ,  Chi-Lin Chen

    IPC: H01J9/26

    CPC classification number: G02F1/133305

    Abstract: A method for manufacturing a flexible panel is disclosed, which has the following steps. First, a first substrate having a plurality of functional switches or conducting lines thereon is provided. Then, a second substrate is bonded on the functional switches or conducting lines, and the first substrate is thinned to a predetermined thickness subsequently. Afterwards, a flexible third substrate is adhered on the first substrate, wherein the first substrate is sandwiched between the second substrate and the third substrate. Finally, the second substrate is removed.

    Abstract translation: 公开了一种制造柔性面板的方法，其具有以下步骤。 首先，提供具有多个功能开关或导线的第一基板。 然后，第二基板被接合在功能开关或导线上，并且第一基板随后变薄到预定厚度。 之后，将柔性第三基板粘附在第一基板上，其中第一基板夹在第二基板和第三基板之间。 最后，去除第二衬底。

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