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    RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME
    51.
    发明申请
    RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME 审中-公开
    使用它的耐腐蚀组合物和图案处理方法

    公开(公告)号：US20120214100A1

    公开(公告)日：2012-08-23

    申请号：US13396081

    申请日：2012-02-14

    申请人： Tomohiro Kobayashi ,  Youichi Ohsawa ,  Yuji Harada ,  Yuki Suka

    发明人： Tomohiro Kobayashi ,  Youichi Ohsawa ,  Yuji Harada ,  Yuki Suka

    IPC分类号： G03F7/20 ,  G03F7/027

    CPC分类号： G03F7/0045 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041

    摘要： There is disclosed a resist composition, wherein the composition is used in a lithography and comprises at least: a polymer (A) that becomes a base resin whose alkaline-solubility changes by an acid, a photo acid generator (B) generating a sulfonic acid represented by the following general formula (1) by responding to a high energy beam, and a polymer additive (C) represented by the following general formula (2). There can be provided a resist composition showing not only excellent lithography properties but also a high receding contact angle, and in addition, being capable of suppressing a blob defect in both the immersion exposures using and not using a top coat; and a patterning process using the same.

    摘要翻译： 公开了一种抗蚀剂组合物，其中该组合物用于光刻，并且至少包括：成为其酸溶性变化的碱性树脂的聚合物（A），产生磺酸的光酸产生剂（B） 由高能束响应的以下通式（1）表示，和由以下通式（2）表示的聚合物添加剂（C）。 可以提供抗蚀剂组合物，其不仅显示出优异的光刻性能，而且还具有高的后退接触角，此外，还能够使用并不使用顶涂层来抑制浸没曝光中的斑点缺陷; 以及使用其的图案化处理。

    Photo acid generator, chemical amplification resist material
    54.
    发明授权
    Photo acid generator, chemical amplification resist material 有权
    照片酸发生器，化学放大抗蚀材料

    公开(公告)号：US07211367B2

    公开(公告)日：2007-05-01

    申请号：US11373925

    申请日：2006-03-13

    申请人： Tomohiro Kobayashi ,  Satoshi Watanabe ,  Tsunehiro Nishi ,  Youichi Ohsawa ,  Katsuhiro Kobayashi

    发明人： Tomohiro Kobayashi ,  Satoshi Watanabe ,  Tsunehiro Nishi ,  Youichi Ohsawa ,  Katsuhiro Kobayashi

    IPC分类号： G03F7/031

    CPC分类号： G03F7/0045 ,  C07D327/06 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/0758

    摘要： A high resolution resist material comprising an acid generator is provided so that high sensitivity and high resolution for high energy rays of 300 nm or less, small line-edge roughness, and excellence in heat stability and storage stability are obtained. Moreover, a pattern formation method using this resist material are provided. Specifically, a novel compound of the following general formula (1); and a positive resist material comprising this compound preferably as a photo acid generator, and a base resin; are provided. This positive resist material may contain a basic compound or a dissolution inhibitor. Further, the present invention provides a pattern formation method comprising the steps of applying this positive resist material on a substrate, then heat-treating the material, exposing the treated material to a high energy ray having a wavelength of 300 nm or less via a photo mask, optionally heat-treating the exposed material, and developing the material using a developer

    摘要翻译： 提供了包含酸产生器的高分辨率抗蚀剂材料，从而获得了300nm以下的高能量射线的高灵敏度和高分辨率，小的线边缘粗糙度，以及热稳定性和储存稳定性方面的优异性。 此外，提供了使用该抗蚀剂材料的图案形成方法。 具体地，下述通式（1）的新化合物; 以及优选含有该化合物作为光酸发生剂的正性抗蚀剂材料和基础树脂; 被提供。 该正性抗蚀剂材料可含有碱性化合物或溶解抑制剂。 此外，本发明提供了一种图案形成方法，包括以下步骤：将该正性抗蚀剂材料涂布在基板上，然后对该材料进行热处理，通过照片将经处理的材料暴露于波长为300nm以下的高能量射线 掩模，任选地热处理暴露的材料，以及使用显影剂显影材料

    Positive resist composition and patterning process
    59.
    发明申请
    Positive resist composition and patterning process 有权
    正抗蚀剂组成和图案化工艺

    公开(公告)号：US20080153030A1

    公开(公告)日：2008-06-26

    申请号：US12000284

    申请日：2007-12-11

    申请人： Tomohiro Kobayashi ,  Youichi Ohsawa ,  Ryosuke Taniguchi

    发明人： Tomohiro Kobayashi ,  Youichi Ohsawa ,  Ryosuke Taniguchi

    IPC分类号： G03F7/039 ,  G03F7/26

    CPC分类号： G03F7/0397 ,  G03F7/0045

    摘要： There is disclosed a resist composition that remarkably improves the resolution of photolithography using a high energy beam such as ArF excimer laser light as a light source, and exhibits excellent resistance to surface roughness and side lobe under use of a halftone phase shift mask; and a patterning process using the resist composition. The positive resist composition at least comprises (A) a resin component comprising a repeating unit represented by the following general formula (1); (B) a photoacid generator generating sulfonic acid represented by the following general formula (2) upon exposure to a high energy beam; and (C) an onium salt where a cation is sulfonium represented by the following general formula (3), or ammonium represented by the following general formula (4); and an anion is represented by any one of the following general formulae (5) to (7).

    摘要翻译： 公开了一种抗蚀剂组合物，其使用诸如ArF准分子激光的高能束作为光源显着提高了光刻的分辨率，并且在使用半色调相移掩模的情况下表现出优异的抗表面粗糙度和侧凸的性能; 以及使用抗蚀剂组合物的图案化工艺。 正型抗蚀剂组合物至少包含（A）包含由以下通式（1）表示的重复单元的树脂组分; （B）在暴露于高能量束时产生由以下通式（2）表示的磺酸的光酸产生剂; 和（C）鎓盐，其中阳离子是由以下通式（3）表示的锍或由以下通式（4）表示的铵; 并且阴离子由以下通式（5）至（7）中的任一个表示。