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73 条记录 (耗时 0.052 秒)

    Method of fabricating rugged capacitor of high density DRAMs
    51.
    发明授权
    Method of fabricating rugged capacitor of high density DRAMs 失效
    制造高密度DRAM耐久电容器的方法

    公开(公告)号：US5923989A

    公开(公告)日：1999-07-13

    申请号：US81598

    申请日：1998-05-20

    申请人： Shian-Jyh Lin ,  Tsu-An Lin ,  Wen-Chieh Chang ,  Shiou-Yu Wang ,  Tean-Sen Jen ,  Hui-Jen Yang ,  Jia-Shyong Cheng ,  Ming-Teng Hsieh

    发明人： Shian-Jyh Lin ,  Tsu-An Lin ,  Wen-Chieh Chang ,  Shiou-Yu Wang ,  Tean-Sen Jen ,  Hui-Jen Yang ,  Jia-Shyong Cheng ,  Ming-Teng Hsieh

    IPC分类号： H01L21/02 ,  H01L21/8242

    CPC分类号： H01L27/10852 ,  H01L28/84

    摘要： A method of fabricating a rugged capacitor structure of high density Dynamic Random Access Memory (DRAM) cells is disclosed. First, MOSFETs, wordlines and bitlines are formed on a semiconductor silicon substrate. Next, a dielectric layer and a doped polysilicon layer are sequentially deposited over the entire silicon substrate. The dielectric layer and doped polysilicon layer are then partially etched to open source contact windows. Then, a polysilicon layer is deposited overlaying the doped polysilicon layer and filling into the source contact windows. Next, the polysilicon layer and doped polysilicon layers are partially etched to define bottom electrodes of the capacitors. Next, tilt angle implantation is performed to implant impurities into top surface and four sidewalls of the polysilicon layer and doped polysilicon layer. Next, a rugged polysilicon layer is deposited overlaying the polysilicon, doped polysilicon and third dielectric layers. Next, the polysilicon layer is anisotropically etched by using the rugged polysilicon layer as an etching mask to transfer rugged surface profile from the rugged polysilicon layer to the polysilicon layer. Finally, an interelectrode dielectric layer and a third polysilicon layer as top electrodes of the capacitors are sequentially formed to complete the rugged capacitor for high density DRAM applications.

    摘要翻译： 公开了一种制造高密度动态随机存取存储器（DRAM）单元的坚固电容器结构的方法。 首先，在半导体硅衬底上形成MOSFET，字线和位线。 接下来，在整个硅衬底上依次沉积介电层和掺杂多晶硅层。 然后将电介质层和掺杂多晶硅层部分地蚀刻到开源接触窗口。 然后，沉积覆盖掺杂多晶硅层并填充到源极接触窗口中的多晶硅层。 接下来，部分蚀刻多晶硅层和掺杂多晶硅层以限定电容器的底部电极。 接下来，进行倾斜角注入以将杂质植入多晶硅层的顶表面和四个侧壁以及掺杂多晶硅层。 接下来，沉积覆盖多晶硅，掺杂多晶硅和第三介电层的坚固的多晶硅层。 接下来，通过使用坚固的多晶硅层作为蚀刻掩模来将多晶硅层各向异性地蚀刻，以将粗糙的表面轮廓从坚固的多晶硅层转移到多晶硅层。 最后，依次形成作为电容器顶电极的电极间电介质层和第三多晶硅层，以完成用于高密度DRAM应用的坚固电容器。

    Black matrix for liquid crystal display
    52.
    发明授权
    Black matrix for liquid crystal display 失效
    黑色矩阵用于液晶显示

    公开(公告)号：US5721599A

    公开(公告)日：1998-02-24

    申请号：US586535

    申请日：1996-01-16

    申请人： Jia-Shyong Cheng

    发明人： Jia-Shyong Cheng

    IPC分类号： G02F1/1335 ,  G02F1/1343

    CPC分类号： G02F1/133512 ,  G02F1/134309 ,  G02F2001/133519

    摘要： The electric circuit of a Liquid Crystal Display normally includes a common electrode comprising a material such as indium-tin-oxide that has high resistivity and hence high series resistance. Said series resistance is significantly reduced by the design taught in the present invention wherein an electrically conductive black matrix is located so as to be in contact with the common electrode. Additionally, said design reduces the level of light reflected back in the direction of viewing, thereby improving the contrast level of the display.

    摘要翻译： 液晶显示器的电路通常包括具有高电阻率和因此高串联电阻的诸如铟锡氧化物的材料的公共电极。 所述串联电阻通过本发明所述的设计显着减少，其中导电黑色矩阵被定位成与公共电极接触。 另外，所述设计减少了在观看方向上反射的光的水平，从而提高了显示器的对比度。

    Electronic paper display device
    54.
    发明授权
    Electronic paper display device 有权
    电子纸显示装置

    公开(公告)号：US08599471B2

    公开(公告)日：2013-12-03

    申请号：US13337302

    申请日：2011-12-27

    申请人： Po-Sheng Shih ,  Jia-Shyong Cheng ,  Po-Yang Chen

    发明人： Po-Sheng Shih ,  Jia-Shyong Cheng ,  Po-Yang Chen

    IPC分类号： G02B26/00

    CPC分类号： G06F3/044 ,  B82Y15/00 ,  G02F1/13338 ,  G02F1/167

    摘要： An electronic paper display device includes an electronic paper display panel, and a functional layer. The electronic paper display panel includes a common electrode layer and a display surface. The functional layer is located on the display surface and includes a carbon nanotube touching functional layer. A distance between the common electrode layer and the carbon nanotube touching functional layer is above 100 microns and equal to or less than 2 millimeters.

    摘要翻译： 电子纸显示装置包括电子纸显示面板和功能层。 电子纸显示面板包括公共电极层和显示面。 功能层位于显示面上，具有碳纳米管触摸功能层。 公共电极层和碳纳米管接触功能层之间的距离在100微米以上且等于或小于2毫米。

    Method for making patterned conductive element
    55.
    发明授权
    Method for making patterned conductive element 有权
    图案化导电元件的制造方法

    公开(公告)号：US08454787B2

    公开(公告)日：2013-06-04

    申请号：US13339700

    申请日：2011-12-29

    申请人： Po-Sheng Shih ,  Jia-Shyong Cheng

    发明人： Po-Sheng Shih ,  Jia-Shyong Cheng

    IPC分类号： B29C65/52 ,  B32B37/12 ,  B32B37/24 ,  B32B37/30 ,  B32B38/10

    CPC分类号： B82Y30/00

    摘要： A method for making a patterned conductive element includes following steps. A substrate is provided. A patterned adhesive layer is applied on a surface of the substrate. A carbon nanotube layer is placed on a surface of the patterned adhesive layer. The patterned adhesive layer is solidified to obtain a fixed part of the carbon nanotube layer and a non-fixed part of carbon nanotube layer. The non-fixed part of carbon nanotube layer is removed.

    摘要翻译： 制造图案化导电元件的方法包括以下步骤。 提供基板。 将图案化的粘合剂层施加在基材的表面上。 将碳纳米管层放置在图案化的粘合剂层的表面上。 图案化的粘合剂层被固化以获得碳纳米管层的固定部分和碳纳米管层的非固定部分。 除去碳纳米管层的非固定部分。

    In-plane switching liquid crystal display array
    57.
    发明授权
    In-plane switching liquid crystal display array 有权
    平面切换液晶显示阵列

    公开(公告)号：US06506617B1

    公开(公告)日：2003-01-14

    申请号：US10109795

    申请日：2002-03-27

    申请人： Jia-Shyong Cheng

    发明人： Jia-Shyong Cheng

    IPC分类号： H01L2100

    CPC分类号： G02F1/134363

    摘要： A TFT array substrate and a process for manufacturing the same are provided. A plurality of TFTs in array are formed on a substrate. A gate insulating layer and a protection layer are sequentially formed to cover a pixel region of the substrate. A plurality of openings each of which has an undercut profile are formed in the gate insulating layer and the protection layer. Then, a transparent conductive layer is formed over the substrate. One of the two parts separated is located in a bottom of the opening and the other is on the protection layer, such that two parts of the transparent conductive layer disconnect and no junction there between occurs. The part of the transparent conductive layer in the bottom of the opening is referred to as a transparent pixel electrode. The part of the transparent conductive layer on the protection layer is connected to a common metal line to form a transparent common electrode. The transparent pixel electrode disconnects to but overlaps the protection layer.

    摘要翻译： 提供TFT阵列基板及其制造方法。 阵列上的多个TFT形成在基板上。 依次形成栅极绝缘层和保护层以覆盖基板的像素区域。 在栅绝缘层和保护层中形成有多个开口，每个开口具有底切轮廓。 然后，在衬底上形成透明导电层。 分离的两个部件中的一个位于开口的底部，另一个位于保护层上，使得透明导电层的两个部分断开并且不发生连接。 将开口底部的透明导电层的一部分称为透明像素电极。 保护层上的透明导电层的一部分连接到公共金属线以形成透明公共电极。 透明像素电极断开，但与保护层重叠。

    Tri-layer process for forming TFT matrix of LCD with gate metal layer around pixel electrode as black matrix
    58.
    发明授权
    Tri-layer process for forming TFT matrix of LCD with gate metal layer around pixel electrode as black matrix 有权
    用于形成具有围绕像素电极的栅极金属层作为黑矩阵的LCD的TFT矩阵的三层工艺

    公开(公告)号：US06448117B1

    公开(公告)日：2002-09-10

    申请号：US09656093

    申请日：2000-09-06

    申请人： Tean-Sen Jen ,  Jia-Shyong Cheng

    发明人： Tean-Sen Jen ,  Jia-Shyong Cheng

    IPC分类号： H01L2128

    CPC分类号： H01L29/66765 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/78633

    摘要： A simplified tri-layer process for forming a thin film transistor matrix for a liquid crystal display is disclosed. By forming a pixel electrode layer before a gate metal layer, a remaining portion of the gate metal layer surrounding the pixel electrode can function as a black matrix after properly patterning and etching the gate metal layer. The in-situ black matrix exempts from an additional step of providing a black matrix and solves the problem in alignment.

    摘要翻译： 公开了用于形成用于液晶显示器的薄膜晶体管矩阵的简化三层工艺。 通过在栅极金属层之前形成像素电极层，围绕像素电极的栅极金属层的剩余部分在适当地构图和蚀刻栅极金属层之后可以用作黑色矩阵。 原位黑矩阵免除了提供黑矩阵的额外步骤，并解决了对准中的问题。

    Tri-layer process for forming TFT matrix of LCD with reduced masking steps
    59.
    发明授权
    Tri-layer process for forming TFT matrix of LCD with reduced masking steps 有权

    公开(公告)号：US06436740B1

    公开(公告)日：2002-08-20

    申请号：US09615919

    申请日：2000-07-13

    申请人： Tean-Sen Jen ,  Jia-Shyong Cheng

    发明人： Tean-Sen Jen ,  Jia-Shyong Cheng

    IPC分类号： H01L2100

    CPC分类号： H01L29/66765

    摘要： A simplified tri-layer process for forming a thin film transistor matrix for a liquid crystal display is disclosed. By using a backside exposure technique, the masking step for patterning an etch stopper layer can be omitted. After forming an active region including a gate electrode and a scan line on the front side of a substrate, and sequentially applying an etch stopper layer and a photoresist layer over the resulting structure, the backside exposure is performed by exposing from the back side of the substrate. A portion of photoresist is shielded by the active region from exposure so that an etch stopper structure having a shape similar to the shape of the active region is formed without any photo-masking and lithographic procedure. Therefore, the above self-aligned effect allows one masking step to be reduced so as to simplify the process.

    Method of fabricating capacitor plate
    60.
    发明授权
    Method of fabricating capacitor plate 失效
    制造电容器板的方法

    公开(公告)号：US5966610A

    公开(公告)日：1999-10-12

    申请号：US2675

    申请日：1998-01-05

    申请人： Shiou-Yu Wang ,  Tean-Sen Jen ,  Jia-Shyong Cheng

    发明人： Shiou-Yu Wang ,  Tean-Sen Jen ,  Jia-Shyong Cheng

    IPC分类号： H01L21/02 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/20

    CPC分类号： H01L28/92 ,  H01L28/91 ,  H01L27/10814 ,  H01L27/10852

    摘要： A method of fabricating a capacitor plate constitutes first providing a substrate. Then, first insulating layer is formed over the substrate. Sequentially, a buffering layer and a second insulating layer, both of which constitute a stacked structure, are formed over the first insulating layer. Next, the stacked structure is patterned into an opening thereby exposing a portion of the first insulating layer therethrough. Subsequently, conducting spacers are formed on the sidewalls of the opening. The second insulating layer is thereafter removed, and simultaneously a portion of the first insulating layer not covered by the buffering layer and the conducting spacers are removed to form a contact window, thereby exposing a portion of the substrate therethrough. Then, a conducting layer is conformably deposited over the substrate, and thereafter etched away until a portion of the buffering layer is exposed. Finally, the exposed buffering layer is removed. The remaining conducting layer and the conducting spacers constitute the capacitor's bottom electrode plate.

    摘要翻译： 构成电容器板的方法首先构成基板。 然后，在基板上形成第一绝缘层。 顺序地，在第一绝缘层上形成缓冲层和构成堆叠结构的第二绝缘层。 接下来，将堆叠结构图案化成开口，从而使第一绝缘层的一部分暴露于其中。 随后，在开口的侧壁上形成导电间隔物。 此后除去第二绝缘层，同时将不被缓冲层和导电间隔物覆盖的第一绝缘层的一部分移除以形成接触窗，从而使基板的一部分暴露。 然后，将导电层顺应地沉积在衬底上，然后蚀刻掉直到缓冲层的一部分露出。 最后，暴露的缓冲层被去除。 剩余的导电层和导电间隔物构成电容器的底部电极板。