摘要:
A TFT array panel-including a substrate, a gate line having a gate electrode, a gate insulating layer formed on the gate line, a data line having a source electrode and a drain electrode spaced apart from the source electrode, a passivation layer formed on the data line and the drain electrode, and a pixel electrode connected to the drain electrode is provided. The TFT array panel further includes a protection layer including Si under at least one of the gate insulating layer and the passivation layer to enhance reliability.
摘要:
A TFT includes a gate electrode, an active layer, a source electrode, a drain electrode, and a buffer layer. The gate electrode is formed on the substrate; the active layer is formed on the gate electrode. The source and drain electrodes, formed on the active layer, are separated by a predetermined distance. The buffer layer is formed between the active layer and the source and drain electrodes. The buffer layer has a substantially continuously varying content ratio corresponding to a buffer layer thickness. The buffer layer is formed to suppress oxidation of the active layer, and reduce contact resistance.
摘要:
A liquid crystal display device having fingerprint identification device for enhancing aperture ratio and transmissivity of a TFT-LCD panel is disclosed. A fingerprint identification substrate (400) is attached to a TFT substrate (300). The TFI substrate has color-filter-on-array structure in which the color filters (336) and the thin film transistors can be eliminated, the aperture ratio is increased, and the quality of image display is enhanced. In addition, the transmissivity is increased according to the decrease of the number of glass substrate used in the liquid crystal display device, so that the sensitivity of fingerprint identification is enhanced.
摘要:
A method for removing noise of a gate signal that is outputted from a gate driving circuit including a plurality of stages, the method includes electrically connecting two terminals of two adjacent stages that have noise components opposite in phase to each other during a first period, and electrically disconnecting the two terminals of the two adjacent stages that have the noise components opposite in phase to each other during a second period.
摘要:
A display substrate having a fan-out and a method for manufacturing the display substrate are disclosed. The fan-out includes an insulating substrate, a first line, a second line, a resistance control pattern, and first and second detour pattern. The first line is disposed on the insulating substrate and is connected to a pad. The second line is formed from the same layer as the first line and is connected to a thin-film transistor (TFT). The resistance control pattern is formed from a different layer than the first and second lines. The first and second detour patterns are formed from a different layer than the first and second lines and the resistance control pattern, and connect the first and second lines with the resistance control pattern, respectively.
摘要:
A liquid crystal display having a touch screen panel (TSP) function includes a sensor unit formed on the first substrate; a first sensor wire disposed on the first substrate and a second sensor wire extending perpendicular to the first sensor wire, wherein the sensor unit includes a first sensor electrode connected to the first sensor wire and a second sensor electrode connected to the second sensor wire, wherein said first sensor electrode and said second sensor electrode connect when touched, and said first and second sensor wires confirm a touch position by transmitting a sensing current through the connection between the first sensor electrode and the second sensor electrode, a trench is formed near the sensor unit and a silicon protrusion pattern to increase the sensitivity of the touch screen panel.
摘要:
A method of manufacturing a silicon layer includes pretreating a surface of a silicon nitride layer formed on a substrate through a plasma enhanced chemical vapor deposition method using a first reaction gas including at least one of silicone tetrafluoride (SiF4) gas, a nitrogen trifluoride (NF3) gas, SiF4—H2 gas and a mixture thereof. Then, a silicon layer is formed on the pretreated silicon nitride layer through the plasma enhanced chemical vapor deposition method using a second reaction gas including a mixture of gas including silicon tetrafluoride (SiF4), hydrogen (H2) and argon (Ar).
摘要:
An array substrate includes a base substrate which includes a display area and a peripheral area adjacent to the display area, a plurality of fan-out lines arranged in the peripheral area to receive a driving signal from an exterior source, at least one fan-out line among the plurality of fan-out lines arranged on a different layer from a layer on which remaining fan-out lines of the plurality of fan-out lines are arranged, a plurality of signal lines arranged in the display area to receive the driving signal from the plurality of fan-out lines and a pixel array arranged in the display area to receive the driving signal from the plurality of signal lines.
摘要:
A display substrate includes respective pluralities of gate lines, data lines, switching elements, storage lines, pixel electrodes, and an organic insulation layer. The gate lines and the data lines define a plurality of unit pixels. The storage lines are respectively formed adjacent to the respective drain electrodes of the respective switching elements of respective rows of the unit pixels. The organic insulation layer has a hole that is formed within the area of each of the unit pixels and that extends from a contact area formed at a portion of the corresponding drain electrode of the pixel to a portion corresponding to the storage line thereof. This arrangement enables the marginal area needed to prevent mismatch of the hole in the areas of the contact area and the storage line to be reduced, thereby increasing the aperture ratio of the display.
摘要:
A thin film transistor substrate includes a base substrate, a gate electrode, a gate insulating layer, a surface treating layer, an active layer, a source electrode and a drain electrode. The gate electrode is formed on the base substrate. The gate insulating layer is formed on the base substrate to cover the gate electrode. The surface treating layer is formed on the gate insulating layer by treating the gate insulating layer with a nitrogen-containing gas to prevent leakage current. The active layer is formed on the surface treating layer to cover the gate electrode. The source electrode and the gate electrode that are spaced apart from each other by a predetermined distance are formed on the active layer.