公开(公告)号：US07107083B2

公开(公告)日：2006-09-12

申请号：US10144206

申请日：2002-05-10

Applicant: Kazutoshi Watanabe

Inventor： Kazutoshi Watanabe

IPC: H04M1/00 ,  H04B1/38

CPC classification number: H04M1/0216 ,  G06F1/1616 ,  G06F1/1626 ,  G06F1/1632 ,  H04M2250/70

Abstract: An input device includes a supporting unit which is provided with first shafts, and a rotating unit is connected to the first shafts in a rotatable manner. In addition, an operating unit is provided with second shafts, and the rotating unit is also connected to the second shafts in a rotatable manner. When the operating unit is at an operating position, it is closely attached to an input unit provided on the front surface of a mobile phone. When the operating unit is at a stored position, the second shafts of the operating unit is moved from the front side of a mobile phone to the back side thereof, so that the operating unit is closely attached to the back surface of the mobile phone.

公开(公告)号：US6152627A

公开(公告)日：2000-11-28

申请号：US896505

申请日：1997-07-01

Applicant: Kazutoshi Watanabe ,  Tsuyoshi Narusawa ,  Yoshirou Koutaka ,  Kunio Hosono

Inventor： Kazutoshi Watanabe ,  Tsuyoshi Narusawa ,  Yoshirou Koutaka ,  Kunio Hosono

IPC: G06F3/02 ,  H01H3/12 ,  H01H13/14 ,  H01H13/70 ,  B41J5/14

CPC classification number: G06F3/0216 ,  H01H3/125

Abstract: A keyboard device includes a plurality of keyswitches each having a keytop movable up and down, wherein the angle of the keytop varies depending on whether the keytop is in an initial position or in a pressed position. In this structure, the keytop moves in a direction corresponding to the motion of an operator's finger and thus smooth operations can be achieved, as opposed to a conventional keyboard device in which a keytop moves vertically while maintaining itself horizontal and thus the motion of the keytop occurs in a direction different from the motion of an operator's finger.

Abstract translation: 键盘装置包括多个键开关，每个键开关具有可上下移动的键顶，其中键顶的角度根据键顶是处于初始位置还是处于按压位置而变化。 在这种结构中，键帽在与操作者的手指的运动相对应的方向上移动，因此可以实现平滑操作，而不是常规的键盘装置，其中键顶垂直移动，同时保持其自身水平并因此保持键盘的运动 发生在与操作者的手指的运动不同的方向上。

公开(公告)号：US5967298A

公开(公告)日：1999-10-19

申请号：US909013

申请日：1997-08-08

Applicant: Kazutoshi Watanabe ,  Tsuyoshi Narusawa

Inventor： Kazutoshi Watanabe ,  Tsuyoshi Narusawa

IPC: G06F3/02 ,  H01H3/12 ,  H01H13/14 ,  H01H13/20 ,  H01H13/712 ,  H01H13/70

CPC classification number: H01H3/125

Abstract: In conventional keyboard devices, since an elastic member is disposed between an insulating substrate and the central crossing part of levers, it is impossible to realize a thin keyswitch, and a high cost is required to modify the height of the keyswitch to a desired value required in a specific application. The invention provides a keyboard device having no such problems. In the keyboard device of the invention, a first and second levers are combined with each other via a shaft such that they cross each other; an elastic member is disposed in a hollow formed in the first or second lever; and the top portion of the elastic member is in contact with the pedestal formed on the back surface of the keytop. This structure allows a reduction in space between the keytop and the top portion of the elastic member. Thus, it is possible to realize a thin-type keyboard device, and it is also possible to accommodate the requirement of various heights of keyswitches simply by making a modification on the keytop. This allows a reduction in production cost.

Abstract translation: 在传统的键盘装置中，由于弹性构件设置在绝缘基板和杠杆的中心交叉部分之间，因此不可能实现薄的钥匙开关，并且需要高成本将钥匙开关的高度改变到所需的值 在具体应用中。 本发明提供一种没有这种问题的键盘装置。 在本发明的键盘装置中，第一和第二杠杆通过轴彼此结合，使得它们彼此交叉; 弹性构件设置在形成在第一或第二杆中的中空部中; 并且弹性构件的顶部与形成在键顶的背面上的基座接触。 这种结构允许减小弹性构件的键顶和顶部之间的空间。 因此，可以实现薄型键盘装置，并且也可以简单地通过在键盘上进行修改来适应键盘开关的各种高度的要求。 这样可以降低生产成本。

公开(公告)号：US5950328A

公开(公告)日：1999-09-14

申请号：US994669

申请日：1997-12-19

Applicant: Ikuhiro Ichiko ,  Kazutoshi Watanabe

Inventor： Ikuhiro Ichiko ,  Kazutoshi Watanabe

IPC: F26B3/02 ,  H01L21/00 ,  H01L21/304 ,  F26B21/00

CPC classification number: H01L21/67034

Abstract: A drying equipment includes an equipment body including a vapor bath, carrier for carring a semiconductor wafer, receiver tray, inert gas supply unit, cooling pipe, exhaust unit, transportation unit, control unit, etc. An air supply opening of a blower is opposite to a top opening of the vapor bath. The vapor bath contains an organic solvent therein. A vapor is generated by heating the organic solvent. A vapor phase boundary surface is formed on the boundary between the vapor and air overlying the same. When the wafer at low temperature is put into the vapor bath by means of the transportation unit, the organic solvent vapor condenses on the surface of the wafer. The inert gas supply unit supplies an inert gas to the vapor in the vapor bath. The wafer is pulled up slowly from the vapor by means of the transportation unit, and passes the vapor phase boundary surface on the way.

Abstract translation: 干燥设备包括一个包括蒸汽浴的设备主体，用于接收半导体晶片的托架，接收托盘，惰性气体供应单元，冷却管，排气单元，运输单元，控制单元等。鼓风机的供气开口相反 到蒸气浴的顶部开口。 蒸气浴中含有有机溶剂。 通过加热有机溶剂产生蒸气。 在蒸汽和空气之间的边界上形成一个气相边界面。 当通过运输单元将低温晶片放入蒸气浴中时，有机溶剂蒸气在晶片的表面上冷凝。 惰性气体供应单元向蒸汽浴中的蒸气供应惰性气体。 通过运输单元从蒸汽中缓慢地拉出晶片，并在途中通过气相边界表面。

公开(公告)号：US5116858A

公开(公告)日：1992-05-26

申请号：US514832

申请日：1990-04-26

Applicant: Yoshio Hayashi ,  Yasuhiro Morinaka ,  Masaki Shinoda ,  Hiroyoshi Nishi ,  Kazutoshi Watanabe ,  Nobuko Fukushima

Inventor： Yoshio Hayashi ,  Yasuhiro Morinaka ,  Masaki Shinoda ,  Hiroyoshi Nishi ,  Kazutoshi Watanabe ,  Nobuko Fukushima

IPC: A61K31/415 ,  A61P25/28 ,  A61P43/00 ,  C07D233/70

CPC classification number: C07D233/70

Abstract: 4-Imidazoline derivatives represented by the formula (I) and/or formula (II): ##STR1## wherein R.sup.1 represents C.sub.1 -C.sub.8 alkyl, C.sub.3 -C.sub.8 alkenyl, C.sub.3 -C.sub.8 alkynyl, C.sub.3 -C.sub.8 cycloalkyl, or optionally substituted aralkyl; R.sup.2 and R.sup.3 independently represent hydrogen, C.sub.3 -C.sub.20 alkyl, C.sub.3 -C.sub.20 alkenyl, C.sub.3 -C.sub.20 alkynyl, C.sub.3 -C.sub.20 alkoxy, C.sub.3 -C.sub.20 alkenyloxy, C.sub.3 -C.sub.20 alkynyloxy, C.sub.3 -C.sub.8 cyloalkyl, C.sub.1 -C.sub.10 alkylthio, or optionally substituted aralkyl or aralkyloxy; R.sup.4 represents C.sub.1 -C.sub.6 alkyl, C.sub.3 -C.sub.8 cycloalkyl, or optionally substituted aralkyl; provided that R.sup.2 and R.sup.3 cannot be hydrogen at the same time, and pharmaceutically acceptable salts thereof. A pharmaceutical formulation containing the compound is also provided.

公开(公告)号：US09231185B2

公开(公告)日：2016-01-05

申请号：US13137202

申请日：2011-07-27

Applicant: Fumimasa Horikiri ,  Kenji Shibata ,  Kazufumi Suenaga ,  Kazutoshi Watanabe ,  Akira Nomoto

Inventor： Fumimasa Horikiri ,  Kenji Shibata ,  Kazufumi Suenaga ,  Kazutoshi Watanabe ,  Akira Nomoto

IPC: H01B13/00 ,  H01L41/08 ,  H05K3/10 ,  H01L21/67 ,  H01L41/187 ,  H01L41/332 ,  H01L41/314 ,  H01L41/316 ,  H01L41/318

CPC classification number: H01L41/0805 ,  H01L21/67069 ,  H01L41/1873 ,  H01L41/314 ,  H01L41/316 ,  H01L41/318 ,  H01L41/332 ,  H05K3/108 ,  Y10T428/24479

Abstract: A method for manufacturing a piezoelectric film wafer includes a first processing step for carrying out an ion etching on a KNN piezoelectric film formed on a substrate by using a gas containing Ar, and a second processing step for carrying out a reactive ion etching by using a mixed etching gas containing a fluorine-based reactive gas and Ar after the first processing step.

Abstract translation: 一种压电薄膜晶片的制造方法，其特征在于，包括：通过使用含有Ar的气体，在形成于基板上的KNN压电薄膜进行离子蚀刻的第一加工工序;以及第二加工工序， 含有氟系反应性气体的混合蚀刻气体和第一处理工序后的Ar。

公开(公告)号：US08446074B2

公开(公告)日：2013-05-21

申请号：US13636883

申请日：2011-03-24

Applicant: Kenji Shibata ,  Kazufumi Suenaga ,  Kazutoshi Watanabe ,  Akira Nomoto ,  Fumimasa Horikiri

Inventor： Kenji Shibata ,  Kazufumi Suenaga ,  Kazutoshi Watanabe ,  Akira Nomoto ,  Fumimasa Horikiri

IPC: H01L41/187

CPC classification number: C23C14/025 ,  C23C14/088 ,  C23C14/35 ,  H01L41/0805 ,  H01L41/1873 ,  H01L41/316

Abstract: There is provided a piezoelectric thin film element, comprising: a substrate 1; and a piezoelectric thin film 3 having an alkali niobium oxide-based perovskite structure represented by a composition formula (K1-xNax)yNbO3 provided on the substrate 1, wherein a carbon concentration of the piezoelectric thin film 3 is 2×1019/cm3 or less, or a hydrogen concentration of the piezoelectric thin film 3 is 4×1019/cm3 or less.

Abstract translation: 提供了一种压电薄膜元件，包括：基板1; 以及设置在基板1上的由组成式（K1-xNax）yNbO3表示的碱铌氧化物系钙钛矿结构的压电薄膜3，其中压电薄膜3的碳浓度为2×1019 / cm3以下 ，或压电薄膜3的氢浓度为4×1019 / cm3以下。

公开(公告)号：US20130015392A1

公开(公告)日：2013-01-17

申请号：US13532081

申请日：2012-06-25

Applicant: Kazufumi SUENAGA ,  Kenji Shibata ,  Kazutoshi Watanabe ,  Akira Nomoto ,  Fumimasa Horikiri

Inventor： Kazufumi SUENAGA ,  Kenji Shibata ,  Kazutoshi Watanabe ,  Akira Nomoto ,  Fumimasa Horikiri

IPC: H01L41/187 ,  H01L41/047 ,  H01L41/22 ,  H01L41/04

CPC classification number: H01L41/0805 ,  H01L41/1873 ,  H01L41/316

Abstract: There is provided a piezoelectric film having an alkali niobate-based perovskite structure expressed by a general formula (NaxKyLiz)NbO3(0≦x≦1, 0≦y≦1, 0≦z≦0.2, x+y+z=1), wherein the alkali niobate has a crystal structure of a pseudo-cubic crystal, a tetragonal crystal, an orthorhombic crystal, a monoclinic crystal, a rhombohedral crystal, or has a crystal structure of coexistence of them, and when total of K—O bonding and K-Metal bonding is set as 100% in a binding state around K-atom of the alkali niobate, a K—O bonding ratio is 46.5% or more and a K-Metal bonding ratio is 53.5% or less, wherein the Metal indicates a metal atom included in the piezoelectric film.

Abstract translation: 提供了一种由通式（NaxKyLiz）NbO3（0＆amp; nlE; x＆nlE; 1,0＆amp; nlE; y＆nlE; 1,0＆amp; nlE; z＆nlE; 0.2，x + y + z = 1）表示的碱铌酸盐类钙钛矿结构的压电膜， 其中铌酸锂具有假立方晶体，四方晶体，正交晶体，单斜晶体，菱方晶体的晶体结构，或者具有共晶的晶体结构，并且当总共K-O键合 并且在铌酸碱钾的K原子附近的结合状态下将K金属键合设定为100％，K-O键合比为46.5％以上，K-金属键合比为53.5％以下，其中，金属 表示包含在压电膜中的金属原子。

公开(公告)号：US20120220591A1

公开(公告)日：2012-08-30

申请号：US13389504

申请日：2010-08-11

Applicant: Daiki Sakai ,  Kazuki Nakayama ,  Kazutoshi Watanabe

Inventor： Daiki Sakai ,  Kazuki Nakayama ,  Kazutoshi Watanabe

IPC: A61K31/5377 ,  A61P25/28 ,  A61P9/10 ,  A61P25/00 ,  A61P25/16 ,  A61P25/02 ,  A61P27/02 ,  A61P27/06 ,  A61P3/10 ,  A61P3/04 ,  A61P25/18 ,  A61P35/00 ,  A61P35/02 ,  A61P33/06 ,  C07D413/14

CPC classification number: C07D413/04 ,  C07D401/04 ,  C07D413/14

Abstract: A pyrimidone derivative represented by general formula (I) or a pharmaceutically acceptable salt thereof: wherein X represents hydrogen atom and Y represents hydroxyl group, or X represents fluorine atom and Y represents hydrogen atom; R1 represents a C1-6 alkyl group; R2 represents a morpholin-4-yl group which may be substituted, or the like, which is used for preventive and/or therapeutic treatment of a disease caused by tau protein kinase 1 hyperactivity such as a neurodegenerative diseases (e.g. Alzheimer disease).

Abstract translation: 由通式（I）表示的嘧啶酮衍生物或其药学上可接受的盐：其中X表示氢原子，Y表示羟基，或X表示氟原子，Y表示氢原子; R1表示C1-6烷基; R2表示可被取代的吗啉-4-基，其用于预防和/或治疗由tau蛋白激酶1多动症如神经变性疾病（例如阿尔茨海默病）引起的疾病。

公开(公告)号：US20120095216A1

公开(公告)日：2012-04-19

申请号：US13262396

申请日：2010-04-01

Applicant: Kazutoshi Watanabe ,  Kazuki Nakayama ,  Daiki Sakai

Inventor： Kazutoshi Watanabe ,  Kazuki Nakayama ,  Daiki Sakai

IPC: C07D413/14

CPC classification number: C07D413/14 ,  C07D401/14 ,  C07D403/14

Abstract: A compound represented by the formula (I) or a pharmaceutically acceptable salt thereof: wherein Z represents nitrogen atom, C—F or the like; R1 represents a C1-C3 alkyl group; Y represents oxygen atom or N—R7; R2, R3, R4, R5, R6 and R7 each independently represents hydrogen atom, a C1-C6 alkyl group, or a group represented by the formula (II): which is used for preventive and/or therapeutic treatment of a disease caused by tau protein kinase 1 hyperactivity such as a neurodegenerative diseases (e.g. Alzheimer disease).

Abstract translation: 由式（I）表示的化合物或其药学上可接受的盐：其中Z表示氮原子，C-F等; R1表示C1-C3烷基; Y表示氧原子或N-R7; R2，R3，R4，R5，R6和R7各自独立地表示氢原子，C1-C6烷基或由式（II）表示的基团：其用于预防和/或治疗由 tau蛋白激酶1多动症如神经变性疾病（如阿兹海默症）。