公开(公告)号：US5977583A

公开(公告)日：1999-11-02

申请号：US684059

申请日：1996-07-19

申请人： Keiji Hosotani ,  Yusuke Kohyama

发明人： Keiji Hosotani ,  Yusuke Kohyama

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108

CPC分类号： H01L27/10852 ,  H01L27/10808

摘要： In a method of fabricating a COB DRAM cell, a polysilicon plug is formed on the source and drain in self-alignment with the gate electrode. A bit line contact and a storage electrode contact are formed on the polysilicon plug thereby to reduce the aspect ratio of both the bit line contact and the storage electrode contact. With the polysilicon plug formed in self-alignment with the gate electrode, short-circuiting of contacts of adjacent element regions and short-circuiting of the plugs of the source and drain will not occur, leading to high protection against misregistration. Moreover, an independent lithography process is not required for forming the polysilicon plug, and, therefore, the number of fabrication steps is reduced.

摘要翻译： 在制造COB DRAM单元的方法中，在与栅电极自对准的源极和漏极上形成多晶硅插塞。 在多晶硅插塞上形成位线接触和存储电极接触，从而减小位线接触和存储电极接触的纵横比。 由于多晶硅插塞形成与栅极电极自对准，不会发生相邻元件区域的触点短路和源极和漏极的插头短路，从而导致高度的不对准保护。 此外，不需要独立的光刻工艺来形成多晶硅插塞，因此，制造步骤的数量减少。

公开(公告)号：US08592928B2

公开(公告)日：2013-11-26

申请号：US13237586

申请日：2011-09-20

申请人： Keiji Hosotani ,  Hiroyuki Kanaya ,  Takeshi Kajiyama

发明人： Keiji Hosotani ,  Hiroyuki Kanaya ,  Takeshi Kajiyama

IPC分类号： H01L29/82

CPC分类号： H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： According to one embodiment, a magnetic random access memory includes a selection element formed on a semiconductor substrate, an interlayer dielectric film formed above the selection element, a contact layer formed in the interlayer dielectric film, and electrically connected to the selection element, a lower electrode layer made of a metal material, and electrically connected to the contact layer, a metal oxide insulating film made of an oxide of the metal material, and surrounding a side surface of the lower electrode layer, a magnetoresistive element formed on the lower electrode layer, an upper electrode layer formed on the magnetoresistive element, a sidewall insulating film formed on a side surface of the magnetoresistive element and a side surface of the upper electrode layer, and a bit line electrically connected to the upper electrode layer.

摘要翻译： 根据一个实施例，磁性随机存取存储器包括形成在半导体衬底上的选择元件，形成在选择元件上方的层间电介质膜，形成于层间电介质膜中的电连接到选择元件的接触层， 电极层，与金属材料电连接，由金属材料的氧化物构成的金属氧化物绝缘膜，围绕下部电极层的侧面，形成在下部电极层上的磁阻元件 形成在磁阻元件上的上电极层，形成在磁阻元件的侧面上的侧壁绝缘膜和上电极层的侧面，以及与上电极层电连接的位线。

公开(公告)号：US20120068286A1

公开(公告)日：2012-03-22

申请号：US13237586

申请日：2011-09-20

申请人： Keiji Hosotani ,  Hiroyuki Kanaya ,  Takeshi Kajiyama

发明人： Keiji Hosotani ,  Hiroyuki Kanaya ,  Takeshi Kajiyama

IPC分类号： H01L29/82 ,  H01L21/20

CPC分类号： H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： According to one embodiment, a magnetic random access memory includes a selection element formed on a semiconductor substrate, an interlayer dielectric film formed above the selection element, a contact layer formed in the interlayer dielectric film, and electrically connected to the selection element, a lower electrode layer made of a metal material, and electrically connected to the contact layer, a metal oxide insulating film made of an oxide of the metal material, and surrounding a side surface of the lower electrode layer, a magnetoresistive element formed on the lower electrode layer, an upper electrode layer formed on the magnetoresistive element, a sidewall insulating film formed on a side surface of the magnetoresistive element and a side surface of the upper electrode layer, and a bit line electrically connected to the upper electrode layer.

摘要翻译： 根据一个实施例，磁性随机存取存储器包括形成在半导体衬底上的选择元件，形成在选择元件上方的层间电介质膜，形成于层间电介质膜中的电连接到选择元件的接触层， 电极层，与金属材料电连接，由金属材料的氧化物构成的金属氧化物绝缘膜，围绕下部电极层的侧面，形成在下部电极层上的磁阻元件 形成在磁阻元件上的上电极层，形成在磁阻元件的侧面上的侧壁绝缘膜和上电极层的侧面，以及与上电极层电连接的位线。

公开(公告)号：US20110254114A1

公开(公告)日：2011-10-20

申请号：US13172516

申请日：2011-06-29

申请人： Makoto Nagamine ,  Keiji Hosotani ,  Hisanori Aikawa ,  Tomomasa Ueda ,  Sumio Ikegawa

发明人： Makoto Nagamine ,  Keiji Hosotani ,  Hisanori Aikawa ,  Tomomasa Ueda ,  Sumio Ikegawa

IPC分类号： H01L29/82

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11C11/161 ,  G11C29/50 ,  H01F10/3254 ,  H01F10/3277 ,  H01F41/307 ,  H01L43/08 ,  H01L43/12

摘要： A magnetoresistive effect element includes a first ferromagnetic layer formed above a substrate, a second ferromagnetic layer formed above the first ferromagnetic layer, an insulating layer interposed between the first ferromagnetic layer and the second ferromagnetic layer and formed of a metal oxide, and a first nonmagnetic metal layer interposed between the insulating layer and the second ferromagnetic layer and in contact with a surface of the insulating layer on the side of the second ferromagnetic layer, the first nonmagnetic metal layer containing the same metal element as the metal oxide.

摘要翻译： 磁阻效应元件包括形成在衬底上的第一铁磁层，形成在第一铁磁层之上的第二铁磁层，介于第一铁磁层和第二铁磁层之间并由金属氧化物形成的绝缘层，以及第一非磁性层 金属层介于绝缘层和第二铁磁层之间并与第二铁磁层一侧的绝缘层的表面接触，第一非磁性金属层含有与金属氧化物相同的金属元素。

公开(公告)号：US07894246B2

公开(公告)日：2011-02-22

申请号：US12014522

申请日：2008-01-15

申请人： Tomomasa Ueda ,  Hisanori Aikawa ,  Masatoshi Yoshikawa ,  Naoharu Shimomura ,  Masahiko Nakayama ,  Sumio Ikegawa ,  Keiji Hosotani ,  Makoto Nagamine

发明人： Tomomasa Ueda ,  Hisanori Aikawa ,  Masatoshi Yoshikawa ,  Naoharu Shimomura ,  Masahiko Nakayama ,  Sumio Ikegawa ,  Keiji Hosotani ,  Makoto Nagamine

IPC分类号： G11C11/00

CPC分类号： G11C11/15 ,  H01L27/228 ,  H01L43/08

摘要： A magnetoresistive element includes: a magnetization free layer having a first plane and a second plane located on the opposite side from the first plane, and having a variable magnetization direction; a magnetization pinned layer provided on the first plane side of the magnetization free layer, and having a pinned magnetization direction; a first tunnel barrier layer provided between the magnetization free layer and the magnetization pinned layer; a second tunnel barrier layer provided on the second plane of the magnetization free layer; and a non-magnetic layer provided on a plane on the opposite side of the second tunnel barrier layer from the magnetization free layer. The magnetization direction of the magnetization free layer is variable by applying current between the magnetization pinned layer and the non-magnetic layer, and a resistance ratio between the first tunnel barrier layer and the second tunnel barrier layer is in a range of 1:0.25 to 1:4.

摘要翻译： 磁阻元件包括：无磁化层，其具有第一平面和位于与第一平面相反的一侧的第二平面，并且具有可变的磁化方向; 磁化固定层，设置在所述磁化自由层的所述第一平面侧上，并且具有钉扎磁化方向; 设置在所述磁化自由层和所述磁化固定层之间的第一隧道势垒层; 设置在无磁化层的第二平面上的第二隧道势垒层; 以及设置在与磁化自由层相反的第二隧道势垒层的相对侧上的平面上的非磁性层。 磁化自由层的磁化方向通过在磁化被钉扎层和非磁性层之间施加电流而变化，并且第一隧道势垒层和第二隧道势垒层之间的电阻比在1:0.25至 1：4。

公开(公告)号：US20100315864A1

公开(公告)日：2010-12-16

申请号：US12851275

申请日：2010-08-05

申请人： Tomomasa UEDA ,  Hisanori Aikawa ,  Masatoshi Yoshikawa ,  Naoharu Shimomura ,  Masahiko Nakayama ,  Sumio Ikegawa ,  Keiji Hosotani ,  Makoto Nagamine

发明人： Tomomasa UEDA ,  Hisanori Aikawa ,  Masatoshi Yoshikawa ,  Naoharu Shimomura ,  Masahiko Nakayama ,  Sumio Ikegawa ,  Keiji Hosotani ,  Makoto Nagamine

IPC分类号： G11C11/00 ,  H01L21/02 ,  H01L29/82

CPC分类号： G11C11/15 ,  H01L27/228 ,  H01L43/08

摘要： A magnetoresistive element includes: a magnetization free layer having a first plane and a second plane located on the opposite side from the first plane, and having a variable magnetization direction; a magnetization pinned layer provided on the first plane side of the magnetization free layer, and having a pinned magnetization direction; a first tunnel barrier layer provided between the magnetization free layer and the magnetization pinned layer; a second tunnel barrier layer provided on the second plane of the magnetization free layer; and a non-magnetic layer provided on a plane on the opposite side of the second tunnel barrier layer from the magnetization free layer. The magnetization direction of the magnetization free layer is variable by applying current between the magnetization pinned layer and the non-magnetic layer, and a resistance ratio between the first tunnel barrier layer and the second tunnel barrier layer is in a range of 1:0.25 to 1:4.

摘要翻译： 磁阻元件包括：无磁化层，其具有第一平面和位于与第一平面相反的一侧的第二平面，并且具有可变的磁化方向; 磁化固定层，设置在所述磁化自由层的所述第一平面侧上，并且具有钉扎磁化方向; 设置在所述磁化自由层和所述磁化固定层之间的第一隧道势垒层; 设置在无磁化层的第二平面上的第二隧道势垒层; 以及设置在与磁化自由层相反的第二隧道势垒层的相对侧上的平面上的非磁性层。 磁化自由层的磁化方向通过在磁化被钉扎层和非磁性层之间施加电流而变化，并且第一隧道势垒层和第二隧道势垒层之间的电阻比在1:0.25至 1：4。

公开(公告)号：US20060221680A1

公开(公告)日：2006-10-05

申请号：US11200105

申请日：2005-08-10

申请人： Keiji Hosotani

发明人： Keiji Hosotani

IPC分类号： G11C11/14

CPC分类号： G11C11/15

摘要： A magnetic random access memory includes first and second write wirings, the second write wiring having first and second crossing angles formed by crossing the first write wiring, a first magnetoresistive element having a first axis of easy magnetization directed to a side of the first crossing angle and having a first recording layer including first and second ferromagnetic layers and a first nonmagnetic layer, and a second magnetoresistive element being electrically connected to the first magnetoresistive element, having a second axis of easy magnetization directed to a side of the second crossing angle, and having a second recording layer including third and fourth ferromagnetic layers and a second nonmagnetic layer, wherein in a write operation, magnetizations in the first and second recording layers execute a toggle operation by using the first and second write wirings.

摘要翻译： 磁性随机存取存储器包括第一和第二写布线，第二写布线具有通过与第一写布线交叉而形成的第一和第二交叉角;第一磁阻元件，具有易于磁化的第一轴指向第一交叉角的一侧 并且具有包括第一和第二铁磁层和第一非磁性层的第一记录层，以及电连接到第一磁阻元件的第二磁阻元件，具有引导到第二交叉角侧的易磁化的第二轴;以及 具有包括第三和第四铁磁层和第二非磁性层的第二记录层，其中在写操作中，第一和第二记录层中的磁化通过使用第一和第二写配线执行切换操作。

公开(公告)号：US20060083053A1

公开(公告)日：2006-04-20

申请号：US11094695

申请日：2005-03-31

申请人： Keiji Hosotani

发明人： Keiji Hosotani

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  H01L27/222 ,  H01L27/224 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： A magnetic random access memory includes a magnetoresistive element which has a planar shape having a plurality of corners and in which at least one corner has a radius of curvature of 20 nm or less.

摘要翻译： 磁性随机存取存储器包括磁阻元件，其具有具有多个拐角的平面形状，并且其中至少一个拐角具有20nm或更小的曲率半径。

公开(公告)号：US06977401B2

公开(公告)日：2005-12-20

申请号：US10317141

申请日：2002-12-12

申请人： Keiji Hosotani

发明人： Keiji Hosotani

IPC分类号： G11C11/15 ,  F16K25/00 ,  G11C11/00 ,  G11C11/02 ,  H01L21/8246 ,  H01L27/00 ,  H01L27/22 ,  H01L29/76 ,  H01L29/94

CPC分类号： H01L27/228 ,  B82Y10/00 ,  H01L27/224

摘要： A magnetic memory device includes a first wiring layer which runs in the first direction, a memory element which is arranged above the first wiring layer, second wiring layers which are arranged on the memory element and run in a second direction different from the first direction, and a first magnetic shield layer which is formed on the side surface of each second wiring layer and formed around the side surface of the memory element.

公开(公告)号：US20050208682A1

公开(公告)日：2005-09-22

申请号：US11135337

申请日：2005-05-24

申请人： Kentaro Nakajima ,  Keiji Hosotani

发明人： Kentaro Nakajima ,  Keiji Hosotani

IPC分类号： H01L27/105 ,  H01L21/00 ,  H01L21/8246 ,  H01L27/22 ,  H01L29/76 ,  H01L31/062 ,  H01L43/08 ,  H01L43/12

CPC分类号： H01L43/12 ,  B82Y10/00 ,  H01L27/222 ,  H01L27/228

摘要： A magnetic memory device includes a first interconnection which runs in a first direction, a second interconnection which runs in a second direction different from the first direction, a magnetoresistive element which is arranged at the intersection of and between the first and second interconnections, and a metal layer which is connected to the magnetoresistive element and has a side surface that partially coincides with a side surface of the magnetoresistive element.