摘要:
A drilling composition is provided. The composition includes: I) an organic phase comprising components: i. from about 20 wt. % to about 99.999 wt. %, based on the total weight of components i. and ii., of at least one linear or branched, cyclic or non-cyclic, saturated hydrocarbon; ii. from about 0.001 wt. % to about 25 wt. %, based on the total weight of components i. and ii., of at least one ester; II) from 0 to about 50 wt. %, based on the total weight of the composition, of water or aqueous phase; III) from 0 to about 60 wt. %, based on the total weight of the composition, of at least one additive, wherein the sum of the weight components I) to III) is 100 wt. %.
摘要:
Methods, systems, structures and arrays are disclosed, such as a resistive memory array which includes access devices, for example, back-to-back Zener diodes, that only allow current to pass through a coupled resistive memory cell when a voltage drop applied to the access device is greater than a critical voltage. The array may be biased to reduce standby currents and improve delay times between programming and read operations.
摘要:
An integrated circuit includes a saw-tooth generator including a saw tooth node configured to have a saw-tooth voltage generated thereon; and a first switch having a first end connected to the saw tooth node. The integrated circuit further includes a second switch coupled between an output node and an electrical ground, wherein the first switch and the second switch are configured to operate synchronously. A first current source is connected to the saw tooth node. A second current source is connected to the output node.
摘要:
Techniques for reducing damage in memory cells are provided. Memory cell structures are typically formed using dry etch and/or planarization processes which damage certain regions of the memory cell structure. In one or more embodiments, certain regions of the cell structure may be sensitive to damage. For example, the free magnetic region in magnetic memory cell structures may be susceptible to demagnetization. Such regions may be substantially confined by barrier materials during the formation of the memory cell structure, such that the edges of such regions are protected from damaging processes. Furthermore, in some embodiments, a memory cell structure is formed and confined within a recess in dielectric material.
摘要:
The present invention provides at least one isolated linear composite nucleic acid molecule comprising at least one first tag from at least one first nucleic acid molecule and at least one second tag from at least one second nucleic acid molecule, wherein the first and second nucleic acids interact in a nucleic acid mixture; and wherein the first and second tags are from different nucleic acid molecules. The invention also provides a method of producing at least one isolated linear composite nucleic acid and to a method of detecting and/or identifying nucleic acid interactions.
摘要:
An integrated circuit includes a saw-tooth generator including a saw tooth node configured to have a saw-tooth voltage generated thereon; and a first switch having a first end connected to the saw tooth node. The integrated circuit further includes a second switch coupled between an output node and an electrical ground, wherein the first switch and the second switch are configured to operate synchronously. A first current source is connected to the saw tooth node. A second current source is connected to the output node.
摘要:
Methods, devices, and systems associated with phase change memory structures are described herein. One method of forming a phase change memory structure includes forming an insulator material on a first conductive element and on a dielectric material of a phase change memory cell, forming a heater self-aligned with the first conductive element, forming a phase change material on the heater and at least a portion of the insulator material formed on the dielectric material, and forming a second conductive element of the phase change memory cell on the phase change material.
摘要:
An improved memory array architecture and cell design in which the cell employs two access transistors. In one embodiment, the two access transistors in each cell are coupled at one of their channel terminals to a memory element, which in turn is connected to a bit line. The other of the channel terminals are effectively tied together via reference lines. The word lines (i.e., gates) of the two access transistors are also tied together. The result in a preferred embodiment is a cell having two access transistors wired and accessed in parallel. With such a configuration, the widths of the access transistors can be made one-half the width of more-traditional one-access-transistor designs, saving layout space in that (first) dimension. Moreover, because the word lines of adjacent cells will be deselected, the improved design does not require cell-to-cell isolation (e.g., trench isolation) in the other (second) dimension. The result, when applied to a phase change memory, comprises about a 37% reduction in layout area from previous cell designs.
摘要:
An LED illuminator includes an illuminator base and at least two LED lamp units inclinedly disposed on a surface of the illuminator base. Each of the LED lamp units includes a heat dissipation structure and LEDs oriented downwardly and outwardly. A U-shaped fixing element is secured to a center of the illuminator base. The LED lamp units are connected with sidewalls of the fixing element.
摘要:
Business process enablement of electronic documents is provided. A method includes populating an electronic document supporting structured and unstructured content. The electronic document includes a description identifying a server and the content. The method further includes notifying a document processor of a submission event. The method also includes serializing a portion of the electronic document containing some of the unstructured content. The method additionally includes submitting the electronic document to the server in response to the submission event.