公开(公告)号：US07495272B2

公开(公告)日：2009-02-24

申请号：US10952914

申请日：2004-09-30

申请人： Junya Maruyama ,  Toru Takayama ,  Masafumi Morisue ,  Ryosuke Watanabe ,  Eiji Sugiyama ,  Susumu Okazaki ,  Kazuo Nishi ,  Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki

发明人： Junya Maruyama ,  Toru Takayama ,  Masafumi Morisue ,  Ryosuke Watanabe ,  Eiji Sugiyama ,  Susumu Okazaki ,  Kazuo Nishi ,  Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki

IPC分类号： H01L31/113

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/14609 ,  H01L27/14665 ,  H01L2224/16225

摘要： The area occupied by a photo-sensor element may be reduced and multiple elements may be integrated in a limited area so that the sensor element can have higher output and smaller size. Higher output and miniaturization are achieved by uniting a sensor element using an amorphous semiconductor film (typically an amorphous silicon film) and an output amplifier circuit including a TFT with a semiconductor film having a crystal structure (typically a poly-crystalline silicon film) used as an active layer over a plastic film substrate that can resist the temperature in the process for mounting such as a solder reflow process. A sensor element that can resist bending stress can be obtained.

摘要翻译： 可以减少由光传感器元件占据的面积，并且可以在有限的区域中集成多个元件，使得传感器元件可以具有更高的输出和更小的尺寸。 通过使用非晶半导体膜（通常为非晶硅膜）的传感器元件和包括具有晶体结构的半导体膜（通常为多晶硅膜）的TFT的输出放大器电路来实现更高的输出和小型化，其被用作 在塑料膜基材上的能够抵抗诸如焊料回流工艺的安装过程中的温度的有源层。 可以获得能够抵抗弯曲应力的传感器元件。

公开(公告)号：US20060267202A1

公开(公告)日：2006-11-30

申请号：US11417187

申请日：2006-05-04

申请人： Takanori Matsuzaki

发明人： Takanori Matsuzaki

IPC分类号： H01L23/52 ,  H01L23/48

CPC分类号： H01L23/5225 ,  H01L23/552 ,  H01L27/124 ,  H01L27/13 ,  H01L29/78624 ,  H01L29/78633 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/3011 ,  H01L2924/00

摘要： The invention provides a technology for manufacturing a higher performance and higher reliability semiconductor device at low cost and with high yield. The semiconductor device of the invention has a first conductive layer over a first insulating layer; a second insulating layer over the first conductive layer, which includes an opening extending to the first conductive layer; and a signal wiring layer for electrically connecting an integrated circuit portion to an antenna and a second conductive layer adjacent to the signal wiring layer, which are formed over the second insulating layer. The second conductive layer is in contact with the first conductive layer through the opening, and the first conductive layer overlaps the signal wiring layer with the second insulating layer interposed therebetween.

公开(公告)号：US08513977B2

公开(公告)日：2013-08-20

申请号：US12683776

申请日：2010-01-07

申请人： Takanori Matsuzaki

发明人： Takanori Matsuzaki

IPC分类号： H01L25/00 ,  H03K19/00

CPC分类号： G06K19/073 ,  G11C11/412 ,  H01L2924/0002 ,  H03K17/302 ,  H03K19/00 ,  H01L2924/00

摘要： A semiconductor device which stores data, and in which refresh operation is not needed, is described. The semiconductor device comprises at least a transistor and a capacitor. A first electrode of the capacitor is connected to a reference voltage terminal and a second electrode of the capacitor is connected to one of a source and a drain of the transistor. The semiconductor device is configured to put, when necessary, the other of the source and the drain of the transistor to the same potential as the one of the source and the drain, so that charge accumulated in the capacitor, which is connected to the one of the source and the drain of the transistor, does not leak through the transistor.

摘要翻译： 描述存储数据并且不需要刷新操作的半导体器件。 半导体器件至少包括晶体管和电容器。 电容器的第一电极连接到参考电压端子，电容器的第二电极连接到晶体管的源极和漏极之一。 半导体器件被配置为在需要时将晶体管的源极和漏极中的另一个放置在与源极和漏极之间的电位相同的电位，使得与电容器连接的电容器中累积的电荷 的晶体管的源极和漏极，不会通过晶体管泄漏。

公开(公告)号：US08461509B2

公开(公告)日：2013-06-11

申请号：US13271300

申请日：2011-10-12

申请人： Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki ,  Kazuo Nishi ,  Junya Maruyama

发明人： Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki ,  Kazuo Nishi ,  Junya Maruyama

IPC分类号： H01J40/14

CPC分类号： H01L27/14609 ,  H01L27/12 ,  H01L27/14692

摘要： In an optical sensor device employing an amorphous silicon photodiode, an external amplifier IC and the like are required due to low current capacity of the sensor element in order to improve the load driving capacity. It to increase in cost and mounting space of the optical sensor device. In addition, noise may easily superimpose since the photodiode and the amplifier IC are connected to each other over a printed circuit board. According to the invention, an amorphous silicon photodiode and an amplifier configured by a thin film transistor are formed integrally over a substrate so that the load driving capacity is improved while reducing cost and mounting space. Superimposing noise can also be reduced.

摘要翻译： 在采用非晶硅光电二极管的光学传感器装置中，由于传感器元件的低电流容量需要外部放大器IC等，以提高负载驱动能力。 这导致光学传感器装置的成本和安装空间的增加。 此外，由于光电二极管和放大器IC在印刷电路板上彼此连接，噪声可能容易地叠加。 根据本发明，非晶硅光电二极管和由薄膜晶体管构成的放大器一体地形成在基板上，从而提高负载驱动能力，同时降低成本和安装空间。 叠加噪音也可以减少。

公开(公告)号：US08258862B2

公开(公告)日：2012-09-04

申请号：US13026508

申请日：2011-02-14

申请人： Takanori Matsuzaki ,  Yutaka Shionoiri

发明人： Takanori Matsuzaki ,  Yutaka Shionoiri

IPC分类号： H03D1/00

CPC分类号： H03D1/18 ,  H01L27/1225

摘要： An object is to provide a demodulation circuit having a sufficient demodulation ability. Another object is to provide an RFID tag which uses a demodulation circuit having a sufficient demodulation ability. A material which enables a reverse current to be small enough, for example, an oxide semiconductor material, which is a wide bandgap semiconductor, is used in part of a transistor included in a demodulation circuit. By using the semiconductor material which enables a reverse current of a transistor to be small enough, a sufficient demodulation ability can be secured even when an electromagnetic wave having a high amplitude is received.

摘要翻译： 目的在于提供具有足够的解调能力的解调电路。 另一个目的是提供使用具有足够的解调能力的解调电路的RFID标签。 在解调电路中包括的晶体管的一部分中使用能使反向电流足够小的材料，例如，宽带隙半导体的氧化物半导体材料。 通过使用能够使晶体管的反向电流足够小的半导体材料，即使接收到具有高振幅的电磁波也能够确保足够的解调能力。

公开(公告)号：US20100181384A1

公开(公告)日：2010-07-22

申请号：US12683776

申请日：2010-01-07

申请人： Takanori Matsuzaki

发明人： Takanori Matsuzaki

IPC分类号： G06K19/07 ,  H01L23/52

CPC分类号： G06K19/073 ,  G11C11/412 ,  H01L2924/0002 ,  H03K17/302 ,  H03K19/00 ,  H01L2924/00

摘要： A semiconductor device which stores data, and in which refresh operation is not needed, is described. The semiconductor device comprises at least a transistor and a capacitor. A first electrode of the capacitor is connected to a reference voltage terminal and a second electrode of the capacitor is connected to one of a source and a drain of the transistor. The semiconductor device is configured to put, when necessary, the other of the source and the drain of the transistor to the same potential as the one of the source and the drain, so that charge accumulated in the capacitor, which is connected to the one of the source and the drain of the transistor, does not leak through the transistor.

摘要翻译： 描述存储数据并且不需要刷新操作的半导体器件。 半导体器件至少包括晶体管和电容器。 电容器的第一电极连接到参考电压端子，电容器的第二电极连接到晶体管的源极和漏极之一。 半导体器件被配置为在需要时将晶体管的源极和漏极中的另一个放置在与源极和漏极之间的电位相同的电位，使得与电容器连接的电容器中累积的电荷 的晶体管的源极和漏极，不会通过晶体管泄漏。

公开(公告)号：US20100085792A1

公开(公告)日：2010-04-08

申请号：US12570619

申请日：2009-09-30

申请人： Takanori Matsuzaki

发明人： Takanori Matsuzaki

IPC分类号： G11C5/06 ,  G11C11/24

CPC分类号： H01L27/108 ,  G11C11/4023 ,  H01L27/10894

摘要： A semiconductor device including a memory cell is provided. The memory cell comprises a transistor and a capacitor, and one of a resistor and a diode. A gate of the transistor is electrically connected to a word line, and one of a source and a drain of the transistor is electrically connected to a bit line. One terminal of the capacitor is electrically connected to the other of the source and the drain of the transistor, and the other terminal of the capacitor is electrically connected to a wiring. One terminal of one of the resistor and the diode is electrically connected to the other of the source and the drain of the transistor, and the other terminal of one of the resistor and the diode is electrically connected to the wiring.

摘要翻译： 提供了包括存储单元的半导体器件。 存储单元包括晶体管和电容器，以及电阻器和二极管之一。 晶体管的栅极电连接到字线，并且晶体管的源极和漏极中的一个电连接到位线。 电容器的一个端子电连接到晶体管的源极和漏极中的另一个，并且电容器的另一个端子电连接到布线。 电阻器和二极管中的一个的一个端子电连接到晶体管的源极和漏极中的另一个，并且电阻器和二极管中的一个的另一个端子电连接到布线。

公开(公告)号：US20070188214A1

公开(公告)日：2007-08-16

申请号：US11730086

申请日：2007-03-29

申请人： Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki

发明人： Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki

IPC分类号： H03K5/08

CPC分类号： H02M7/217

摘要： A rectifier circuit configured with a conventional configuration using an operational amplifier and a diode by a thin film transistor over an insulating substrate cannot exhibit the performance of a rectifier circuit due to the low stability of operational amplifier and the low high-frequency characteristic. Therefore, the rectifier circuit requires to be configured by using an IC outside of the insulating substrate in order to rectify a high-frequency signal. According to the invention, an amplifier circuit and a waveform shaping circuit are configured with a thin film transistor and a non-rectified signal is switched by a signal thereof, so that a rectifier circuit with the excellent high-frequency characteristic can be realized.

摘要翻译： 由绝缘基板上的薄膜晶体管构成的使用运算放大器和二极管的常规配置的整流电路由于运算放大器的低稳定性和低的高频特性而不能表现整流电路的性能。 因此，为了整流高频信号，需要通过在绝缘基板的外部使用IC来构成整流电路。 根据本发明，放大器电路和波形整形电路配置有薄膜晶体管，并且通过其信号切换非整流信号，从而可以实现具有优异的高频特性的整流电路。

公开(公告)号：US07199637B2

公开(公告)日：2007-04-03

申请号：US10917374

申请日：2004-08-13

申请人： Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki

发明人： Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki

IPC分类号： H02M1/12 ,  H02M7/217

CPC分类号： H02M7/217

摘要： A rectifier circuit is provided, which does not need a feedback function and prevents deterioration of a frequency characteristic, even if the rectifier circuit is configured with thin film transistors (TFTs). For example, the rectifier circuit is configured with an amplifier circuit, which compares an input signal with a voltage of a power source; a waveform shaping circuit for shaping a waveform of an output signal of the amplifier circuit; a resistor, which is connected to both an input terminal and output terminal; and a switching circuit, which is connected to both the output terminal and the power source, and is controlled by an output signal of the waveform shaping circuit. Then, either the input signal or the voltage of the power source is outputted in accordance with an operation of the switching circuit, so that the input signal is ideally rectified.

摘要翻译： 即使整流电路配置有薄膜晶体管（TFT），也提供了不需要反馈功能并防止频率特性劣化的整流电路。 例如，整流电路配置有放大电路，其将输入信号与电源的电压进行比较; 波形整形电路，用于对放大器电路的输出信号进行波形整形; 电阻器，其连接到输入端子和输出端子; 以及连接到输出端子和电源两者并由波形整形电路的输出信号控制的开关电路。 然后，根据开关电路的动作输出电源的输入信号或电压，使输入信号理想地整流。

公开(公告)号：US20050078495A1

公开(公告)日：2005-04-14

申请号：US10917374

申请日：2004-08-13

申请人： Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki

发明人： Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki

IPC分类号： H01L27/12 ,  H02M5/42 ,  H02M7/217

CPC分类号： H02M7/217

摘要： A rectifier circuit configured with a conventional configuration using an operational amplifier and a diode by a thin film transistor over an insulating substrate cannot exhibit the performance of a rectifier circuit due to the low stability of operational amplifier and the low high-frequency characteristic. Therefore, the rectifier circuit requires to be configured by using an IC outside of the insulating substrate in order to rectify a high-frequency signal. According to the invention, an amplifier circuit and a waveform shaping circuit are configured with a thin film transistor and a non-rectified signal is switched by a signal thereof, so that a rectifier circuit with the excellent high-frequency characteristic can be realized.

摘要翻译： 由绝缘基板上的薄膜晶体管构成的使用运算放大器和二极管的常规配置的整流电路由于运算放大器的低稳定性和低的高频特性而不能表现整流电路的性能。 因此，为了整流高频信号，需要通过在绝缘基板的外部使用IC来构成整流电路。 根据本发明，放大器电路和波形整形电路配置有薄膜晶体管，并且通过其信号切换非整流信号，从而可以实现具有优异的高频特性的整流电路。