公开(公告)号：US06235438B1

公开(公告)日：2001-05-22

申请号：US09166884

申请日：1998-10-06

申请人： Kousuke Suzuki ,  Minoru Onda

发明人： Kousuke Suzuki ,  Minoru Onda

IPC分类号： G03F900

CPC分类号： G03F7/701 ,  G03F7/70241 ,  G03F7/70258 ,  G03F7/70358

摘要： A projection exposure apparatus comprises a projection optical system for projecting a pattern of a mask on a photosensitive substrate; a plane-parallel plate disposed on a side of the photosensitive substrate of the projection optical system, almost perpendicularly to an optical axis of the projection optical system; and a adjustment device for adjusting at least one of an inclination angle of a normal line of the plane-parallel plate relative to the optical axis of the projection optical system and an inclination angle of the plane-parallel plate.

摘要翻译： 投影曝光装置包括：投影光学系统，用于将光敏图案的图案投影在感光基板上; 平面平行板，布置在投影光学系统的感光基板的一侧上，几乎垂直于投影光学系统的光轴; 以及用于调整平面平行板的法线相对于投影光学系统的光轴的倾斜角和平面平行板的倾斜角中的至少一个的调节装置。

公开(公告)号：US20220291603A1

公开(公告)日：2022-09-15

申请号：US17649802

申请日：2022-02-03

申请人： Hiroyuki KISHIDA ,  Kousuke Suzuki ,  Tohru Suganuma ,  Minoru Masuda ,  Masashi Nagayama ,  Kento Takeuchi ,  Kaede Masuko

发明人： Hiroyuki KISHIDA ,  Kousuke Suzuki ,  Tohru Suganuma ,  Minoru Masuda ,  Masashi Nagayama ,  Kento Takeuchi ,  Kaede Masuko

IPC分类号： G03G9/113 ,  G03G15/08

摘要： A carrier for developing an electrostatic latent image is provided. The carrier comprises a core particle having an internal void ratio of from 0.0% to 2.0% and a coating layer coating the core particle. The coating layer contains flat chargeable particles satisfying Formula 1 blow: 1.0≤R1/R2≤3.0  Formula 1 where R1 [nm] and R2 [nm] represent a major axis and a thickness, respectively, of each of the flat chargeable particles. The carrier has an apparent density of from 2.0 to 2.5 g/cm3.

公开(公告)号：US08125613B2

公开(公告)日：2012-02-28

申请号：US11785715

申请日：2007-04-19

申请人： Kousuke Suzuki

发明人： Kousuke Suzuki

IPC分类号： G03B27/32 ,  G03B27/42 ,  G03B27/52 ,  G03B27/58 ,  G03B27/62 ,  G01B11/00

CPC分类号： G03F7/70875 ,  G03F7/70225 ,  G03F7/70258 ,  G03F7/70783

摘要： An exposure apparatus includes a projection optical system, which projects a pattern of a mask onto a prescribed exposure area on a substrate at a prescribed projection magnification. The optical axis center of the projection optical system is set to a position different from that of the center of the projection area onto which the pattern is projected. The exposure apparatus further includes a magnification modification device, which modifies the projection magnification of the projection optical system; a calculation device, which calculates a shift length of the center of the projection area associated with modification of the projection magnification; and a correction device, which corrects the position information of the exposure area based on the shift length of the center of the projection area.

摘要翻译： 曝光装置包括投影光学系统，其以规定的投影倍率将掩模的图案投影到基板上的规定的曝光区域上。 将投影光学系统的光轴中心设定为与投影图案的投影区域的中心不同的位置。 所述曝光装置还具备能够改变所述投影光学系统的投影倍率的倍率变更装置， 计算装置，其计算与投影倍率的修改相关联的投影区域的中心的移动长度; 以及校正装置，其基于投影区域的中心的移动长度校正曝光区域的位置信息。

公开(公告)号：US20100194808A1

公开(公告)日：2010-08-05

申请号：US12699949

申请日：2010-02-04

申请人： Kousuke Suzuki

发明人： Kousuke Suzuki

IPC分类号： B41J29/38

CPC分类号： B41J29/38 ,  B41J2/04573 ,  B41J2/04581 ,  B41J2/04593 ,  B41J2/155

摘要： The present image forming apparatus converts driving data in such a manner that when a volume of liquid to be ejected in an (m+1)-th print cycle following an m-th print cycle is a maximum volume of ink among a plurality of predetermined volumes of ink, a volume of liquid to be ejected in the m-th print cycle is any volume other than zero and the maximum volume among the predetermined volumes, in which m-th print cycle (m is an integer number no less than “0”) no ink is to be ejected

摘要翻译： 本图像形成装置以如下方式转换驱动数据：当在第m打印周期之后的第（m + 1）个打印周期中要喷射的液体的体积是多个预定的 在第m次打印循环中要喷射的液体体积是除了零以外的任何体积和预定体积中的最大体积，其中第m次打印循环（m是不小于“ 0“）不喷墨

公开(公告)号：US07422942B2

公开(公告)日：2008-09-09

申请号：US11798366

申请日：2007-05-14

申请人： Kousuke Suzuki ,  Katsuyuki Karakawa

发明人： Kousuke Suzuki ,  Katsuyuki Karakawa

IPC分类号： H01L21/8242 ,  H01L21/3205 ,  H01L21/4763

CPC分类号： H01L21/76897 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76895 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

摘要： A semiconductor device having a self-aligned contact hole is formed by providing a side wall oxide film on a gate electrode, covering the gate electrode and the side wall oxide film by an oxide film and further covering the oxide film by a nitride film, wherein the oxide film is formed by a plasma CVD process with a reduced plasma power such that the H2O content in the oxide film is less than about 2.4 wt %.

摘要翻译： 具有自对准接触孔的半导体器件通过在栅电极上设置侧壁氧化膜形成，通过氧化膜覆盖栅电极和侧壁氧化膜，并通过氮化物膜进一步覆盖氧化膜，其中 氧化膜通过等离子体CVD工艺形成，其中等离子体功率降低，使得氧化物膜中的H 2 O 2含量小于约2.4重量％。

公开(公告)号：US07405803B2

公开(公告)日：2008-07-29

申请号：US11736177

申请日：2007-04-17

申请人： Yasuo Shimizu ,  Shigeru Hirukawa ,  Kousuke Suzuki ,  Tomoyuki Matsuyama

发明人： Yasuo Shimizu ,  Shigeru Hirukawa ,  Kousuke Suzuki ,  Tomoyuki Matsuyama

IPC分类号： G03B27/32 ,  G03B27/68

CPC分类号： G03B21/18 ,  G03B27/42 ,  G03F7/70258 ,  G03F7/705 ,  G03F7/70508 ,  G03F7/70525 ,  G03F7/706

摘要： A second communications server obtains adjustment information of an adjustment unit in an exposure apparatus and information related to image forming quality (such as wavefront aberration) of a projection optical system under an exposure condition that serves as a reference, via a first communications server, and then calculates an optimal adjustment amount of the adjustment unit under a target exposure condition based on the information. In addition, the second communications server obtains adjustment information of the adjustment and actual measurement data of image forming quality of the projection optical system via the first communications server, and then calculates the optimal adjustment amount of the adjustment unit under the target exposure condition based on the information. And, the second communications server controls the adjustment unit in the exposure apparatus via the first communications server, based on the calculations results.

公开(公告)号：US07384719B2

公开(公告)日：2008-06-10

申请号：US11068835

申请日：2005-03-02

申请人： Masahide Yamashita ,  Tomio Kondou ,  Kousuke Suzuki

发明人： Masahide Yamashita ,  Tomio Kondou ,  Kousuke Suzuki

IPC分类号： G03G9/113

CPC分类号： G03G9/107 ,  G03G9/1075 ,  G03G9/1131 ,  G03G9/1133 ,  G03G9/1136 ,  G03G9/1139

摘要： A carrier composition, including a particulate magnetic material; and a layer located on a surface of the particulate magnetic material, wherein the layer is formed by heating a mixture containing a metal alkoxide; a resin having a hydroxyl group reacting with the metal alkoxide; and a particulate inorganic material.

摘要翻译： 一种载体组合物，包括颗粒状磁性材料; 以及位于所述颗粒状磁性材料的表面上的层，其中所述层通过加热含有金属醇盐的混合物形成; 具有羟基与金属醇盐反应的树脂; 和颗粒状无机材料。

公开(公告)号：US20070287250A1

公开(公告)日：2007-12-13

申请号：US11798366

申请日：2007-05-14

申请人： Kousuke Suzuki ,  Katsuyuki Karakawa

发明人： Kousuke Suzuki ,  Katsuyuki Karakawa

IPC分类号： H01L21/3205

CPC分类号： H01L21/76897 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76895 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

摘要： A semiconductor device having a self-aligned contact hole is formed by providing a side wall oxide film on a gate electrode, covering the gate electrode and the side wall oxide film by an oxide film and further covering the oxide film by a nitride film, wherein the oxide film is formed by a plasma CVD process with a reduced plasma power such that the H2O content in the oxide film is less than about 2.4 wt %.

摘要翻译： 具有自对准接触孔的半导体器件通过在栅电极上设置侧壁氧化膜形成，通过氧化膜覆盖栅电极和侧壁氧化膜，并通过氮化物膜进一步覆盖氧化膜，其中 氧化膜通过等离子体CVD工艺形成，其中等离子体功率降低，使得氧化物膜中的H 2 O 2含量小于约2.4重量％。

公开(公告)号：US07232720B2

公开(公告)日：2007-06-19

申请号：US10793862

申请日：2004-03-08

申请人： Kousuke Suzuki ,  Katsuyuki Karakawa

发明人： Kousuke Suzuki ,  Katsuyuki Karakawa

IPC分类号： H01L21/3205 ,  H01L21/4763

CPC分类号： H01L21/76897 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76895 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

摘要： A semiconductor device having a self-aligned contact hole is formed by providing a side wall oxide film on a gate electrode, covering the gate electrode and the side wall oxide film by an oxide film and further covering the oxide film by a nitride film, wherein the oxide film is formed by a plasma CVD process with a reduced plasma power such that the H2O content in the oxide film is less than about 2.4 wt %.

公开(公告)号：US20050260516A1

公开(公告)日：2005-11-24

申请号：US11126270

申请日：2005-05-11

申请人： Masami Tomita ,  Tomio Kondou ,  Masahide Yamashita ,  Kousuke Suzuki

发明人： Masami Tomita ,  Tomio Kondou ,  Masahide Yamashita ,  Kousuke Suzuki

IPC分类号： G03G5/08 ,  G03G9/08 ,  G03G9/087 ,  G03G9/097 ,  G03G9/107 ,  G03G9/113 ,  G03G15/08 ,  G03G15/09

CPC分类号： G03G9/0804 ,  G03G9/0806 ,  G03G9/0819 ,  G03G9/0827 ,  G03G9/08755 ,  G03G9/09708 ,  G03G9/09716 ,  G03G9/107 ,  G03G9/1131 ,  G03G9/1133 ,  G03G9/1135

摘要： A developer for an electrophotographic tandem image forming method is provided that contains a toner; and a carrier, wherein the toner has a shape factor SF-1 of from 120 to 160, an average circularity of form 0.93 to 0.98, a weight-average particle diameter (D4) of from 3.0 to 8.0 μm, and a ratio (D4/Dn) of the weight-average particle diameter (D4) to a number-average particle diameter (Dn) of from 1.01 to 1.20, and wherein the carrier is almost a spherical ferrite coated with a resin wherein alumina is dispersed, which has an average particle diameter of from 20 to 45 μm and the following formula: (MgO)x(MnO)y(Fe2O3)z wherein x is from 1 to 5 mol %, y is from 5 to 55 mol % and z is from 45 to 55 mol %.

摘要翻译： 提供一种用于电子照相串联成像方法的显影剂，其包含调色剂; 和载体，其中调色剂的形状因子SF-1为120〜160，平均圆形度为0.93〜0.98，重均粒径（D4）为3.0〜8.0μm，比例（D4 / Dn）与数均粒径（Dn）的比值为1.01〜1.20，并且其中载体几乎是涂覆有分散有氧化铝的树脂的球形铁氧体，其具有 平均粒径为20〜45μm，具有下式：<？in-line-formula description =“In-line formula”end =“lead”？>（MgO）x（MnO）y 其中x为1〜5摩尔％，y为0〜5摩尔％，y为1〜5摩尔％，y为1〜5摩尔％ 5〜55摩尔％，z为45〜55摩尔％。