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    Method And System For A Low Parasitic Silicon High-Speed Phase Modulator
    52.
    发明申请
    Method And System For A Low Parasitic Silicon High-Speed Phase Modulator 审中-公开

    公开(公告)号：US20180321521A1

    公开(公告)日：2018-11-08

    申请号：US16036409

    申请日：2018-07-16

    Applicant: Luxtera, Inc.

    Inventor： Ali Ayazi ,  Gianlorenzo Masini ,  Subal Sahni ,  Attila Mekis ,  Thierry Pinguet

    IPC: G02F1/025 ,  G02F1/225

    CPC classification number: G02F1/025 ,  G02F1/2257 ,  G02F2001/212 ,  G02F2201/06 ,  G02F2202/105

    Abstract: Methods and systems for a low-parasitic silicon high-speed phase modulator are disclosed and may include fabricating an optical phase modulator that comprises a PN junction waveguide formed in a silicon layer, wherein the silicon layer may be on an oxide layer and the oxide layer may be on a silicon substrate. The PN junction waveguide may have p-doped and n-doped regions on opposite sides along a length of the PN junction waveguide, and portions of the p-doped and n-doped regions may be removed. Contacts may be formed on remaining portions of the p-doped and n-doped regions. Portions of the p-doped and n-doped regions may be removed symmetrically about the PN junction waveguide. Portions of the p-doped and n-doped regions may be removed in a staggered fashion along the length of the PN junction waveguide. Etch transition features may be removed along the p-doped and n-doped regions.

    Method and system for a low-voltage integrated silicon high-speed modulator
    53.
    发明授权
    Method and system for a low-voltage integrated silicon high-speed modulator 有权

    公开(公告)号：US10048518B2

    公开(公告)日：2018-08-14

    申请号：US15402400

    申请日：2017-01-10

    Applicant: Luxtera, Inc.

    Inventor： Ali Ayazi ,  Kam-Yan Hon ,  Gianlorenzo Masini

    IPC: H04B10/40 ,  G02F1/025 ,  G02F1/01 ,  H04B10/516 ,  H04B10/50 ,  G02F1/225 ,  G02F1/21

    Abstract: Methods and systems for a low-voltage integrated silicon high-speed modulator may include an optical modulator comprising first and second optical waveguides and two optical phase shifters, where each of the two optical phase shifters may comprise a p-n junction with a horizontal section and a vertical section and an optical signal is communicated to the first optical waveguide. A portion of the optical signal may then be coupled to the second optical waveguide. A phase of at least one optical signal in the waveguides may be modulated utilizing the optical phase shifters. A portion of the phase modulated optical signals may be coupled between the two waveguides, thereby generating two output signals from the modulator. A modulating signal may be applied to the phase shifters which may include a reverse bias.

    Method and system for a distributed optoelectronic receiver
    54.
    发明授权
    Method and system for a distributed optoelectronic receiver 有权

    公开(公告)号：US09973282B2

    公开(公告)日：2018-05-15

    申请号：US15356010

    申请日：2016-11-18

    Applicant: Luxtera, Inc.

    Inventor： Brian Welch ,  Gianlorenzo Masini

    IPC: H04B10/69 ,  H03H21/00 ,  H04B10/80 ,  H03F3/08 ,  H03G3/30

    CPC classification number: H04B10/693 ,  H03F3/085 ,  H03G3/3084 ,  H03H21/0012 ,  H04B10/80

    Abstract: Methods and systems for a distributed optoelectronic receiver are disclosed and may include an optoelectronic receiver having a grating coupler, a splitter, a plurality of photodiodes, and a plurality of transimpedance amplifiers (TIAs). The receiver receives a modulated optical signal utilizing the grating coupler, splits the received signal into a plurality of optical signals, generates a plurality of electrical signals from the plurality of optical signals utilizing the plurality of photodiodes, communicates the plurality of electrical signals to the plurality of TIAs, amplifies the plurality of electrical signals utilizing the plurality of TIAs, and generates an output electrical signal from coupled outputs of the plurality of TIAs. Each TIA may be configured to amplify signals in a different frequency range. One of the plurality of electrical signals may be DC coupled to a low frequency TIA of the plurality of TIAs.

    METHOD AND SYSTEM FOR AN OPTICAL CONNECTION SERVICE INTERFACE
    59.
    发明申请
    METHOD AND SYSTEM FOR AN OPTICAL CONNECTION SERVICE INTERFACE 有权
    光连接服务接口的方法和系统

    公开(公告)号：US20160182151A1

    公开(公告)日：2016-06-23

    申请号：US14657907

    申请日：2015-03-13

    Applicant: LUXTERA, INC.

    Inventor： Gianlorenzo Masini ,  Joseph Balardeta ,  Scott Denton

    IPC: H04B10/25 ,  H04B10/40

    CPC classification number: H04B10/40 ,  H04B10/0779

    Abstract: Methods and systems for an optical connection service interface may include, in an optical data link comprising an optical fiber, a local control system, first and second transceivers at ends of the optical fiber, generating a control signal for the local control system at frequencies 10 kHz and an optical service signal for an Optical Connection Service interface (OCSi) at intermediate frequencies between 10 Hz and 10 kHz. An optical signal may be modulated at the intermediate frequencies for the OCSi, and may be modulated and communicated to the second transceiver. The communicated modulated signal and the optical data signal may be detected utilizing a photodetector in the second transceiver. The detected optical signal may be demodulated, and an optical power of the optical data signal may be configured based on the demodulated signal.

    Abstract translation: 用于光学连接服务接口的方法和系统可以包括在包括光纤的光学数据链路中，本地控制系统，在光纤端部处的第一和第二收发器，在本地控制系统的频率下产生控制信号， 10Hz，并且在10Hz至10kHz之间的中间频率下，利用光纤传送频率> 10kHz的光学数据信号和用于光学连接服务接口（OCSi）的光学服务信号。 光信号可以在OCSi的中频调制，并且可以被调制并传送到第二收发器。 可以利用第二收发器中的光电检测器来检测传送的调制信号和光数据信号。 所检测的光信号可以被解调，并且可以基于解调信号来配置光数据信号的光功率。

    Method And System For Monolithic Integration of Photonics And Electronics In CMOS Processes
    60.
    发明申请
    Method And System For Monolithic Integration of Photonics And Electronics In CMOS Processes 审中-公开
    CMOS工艺中光子学与电子学的一体化方法与系统

    公开(公告)号：US20150270898A1

    公开(公告)日：2015-09-24

    申请号：US14729826

    申请日：2015-06-03

    Applicant: Luxtera, Inc.

    Inventor： Attila Mekis ,  Peter De Dobbelaere ,  Kosei Yokoyama ,  Sherif Abdalla ,  Steffen Gloeckner ,  John Guckenberger ,  Thierry Pinguet ,  Gianlorenzo Masini

    IPC: H04B10/2575 ,  H04B10/40

    CPC classification number: H04B10/2575 ,  H01L21/84 ,  H01L27/1203 ,  H04B10/40

    Abstract: Methods and systems for monolithic integration of photonics and electronics in CMOS processes are disclosed and may include in an optoelectronic transceiver comprising photonic and electronic devices from two complementary metal-oxide semiconductor (CMOS) die with different silicon layer thicknesses for the photonic and electronic devices, the CMOS die bonded together by metal contacts: communicating optical signals and electronic signals to and from said optoelectronic transceiver utilizing a received continuous wave optical signal as a source signal. A first of the CMOS die includes the photonic devices and a second includes the electronic devices. Electrical signals may be communicated between electrical devices to the optical devices utilizing through-silicon vias coupled to the metal contacts. The metal contacts may include back-end metals from a CMOS process. The electronic and photonic devices may be fabricated on SOI wafers, with the SOI wafers being diced to form the CMOS die.

    Abstract translation: 公开了用于在CMOS工艺中单片集成光子学和电子学的方法和系统，并且可以包括在包含来自具有用于光子和电子器件的不同硅层厚度的两个互补金属氧化物半导体（CMOS）裸片的光子和电子器件的光电收发器中， 通过金属触点接合在一起的CMOS芯片：利用接收的连续波光信号作为源信号将光信号和电子信号传送到所述光电收发器和从所述光电收发器传送。 第一个CMOS管芯包括光子器件，第二个包括电子器件。 电信号可以通过耦合到金属触点的通硅通孔在电子器件之间传送到光学器件。 金属触点可以包括来自CMOS工艺的后端金属。 电子和光子器件可以制造在SOI晶片上，SOI晶片被切割以形成CMOS管芯。

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