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    Magnetic recording medium in which certain physical properties of the magnetic layer and the backcoat layer are specified
    52.
    发明授权
    Magnetic recording medium in which certain physical properties of the magnetic layer and the backcoat layer are specified 失效
    规定了磁性层和背涂层的某些物理特性的磁记录介质

    公开(公告)号：US5063105A

    公开(公告)日：1991-11-05

    申请号：US466547

    申请日：1990-01-17

    申请人： Katsumi Ryoke ,  Masatoshi Takahashi ,  Yasuo Nishikawa

    发明人： Katsumi Ryoke ,  Masatoshi Takahashi ,  Yasuo Nishikawa

    IPC分类号： G11B5/735

    CPC分类号： G11B5/735 ,  Y10S428/90 ,  Y10T428/265 ,  Y10T428/31 ,  Y10T428/31547 ,  Y10T428/3158

    摘要： A magnetic recording medium comprising a nonmagnetic support having formed thereon a magnetic layer containing a ferromagnetic fine powder, a binder, and carbon black and formed on the opposite side of the nonmagnetic support to the magnetic layer-carrying side a backing layer containing a binder and carbon black, wherein (i) the Young's modulus of the magnetic layer is from 600 to 1100 kg/mm.sup.2 and the Young's modulus of the backing layer is from 200 to 400 kg/mm.sup.2, or (ii) the surface free energy of the backing layer is at least 1 dyn/cm higher than the surface free energy of the magnetic layer, the gloss of the magnetic layer is at least 150, and the gloss of the backing layer is from 2 to 7.

    摘要翻译： 一种包含非磁性载体的磁记录介质，其上形成有含有铁磁性细粉末，粘合剂和炭黑的磁性层，并且在非磁性载体的相对侧上形成有磁性层承载侧，所述背衬层含有粘合剂和 炭黑，其中（i）磁性层的杨氏模量为600至1100kg / mm 2，背衬层的杨氏模量为200至400kg / mm 2，或（ii）背衬的表面自由能 层比磁性层的表面自由能高至少1dyn / cm，磁性层的光泽度至少为150，背衬层的光泽度为2至7。

    Magnetic recording medium
    53.
    发明授权
    Magnetic recording medium 失效
    磁记录介质

    公开(公告)号：US4880693A

    公开(公告)日：1989-11-14

    申请号：US170225

    申请日：1988-03-21

    申请人： Katsumi Ryoke ,  Masatoshi Takahashi ,  Akihiro Hashimoto ,  Tsutomu Okita ,  Takashi Yoneyama

    发明人： Katsumi Ryoke ,  Masatoshi Takahashi ,  Akihiro Hashimoto ,  Tsutomu Okita ,  Takashi Yoneyama

    IPC分类号： C09D5/23 ,  C09D127/04 ,  C09D127/06 ,  C09D175/00 ,  C09D175/04 ,  G11B5/73 ,  G11B5/735

    CPC分类号： G11B5/735 ,  Y10S428/90 ,  Y10T428/25

    摘要： A magnetic recording medium comprising a support having provided on one surface thereof a magnetic recording layer and on the other surface thereof a backing layer containing non-magnetic particles dispersed in a binder, wherein said binder comprises a vinyl chloride/vinyl acetate copolymer resin containing at least one group represented by formula (I) or (II): ##STR1## wherein X represents a --COO-- group, a --CONH-- group, or a --C.sub.6 H.sub.4 -- group; n represents an integer of from 1 to 10; R.sub.1, R.sub.2, and R.sub.3 each represents a hydrogen atom, an alkyl group having from 1 to 10 carbon atoms, or an alkyl derivative having from 1 to 10 carbon atoms, or R.sub.1, R.sub.2, and R.sub.3 may be combined to each other to form a heterocycric ring; and Y.sup..crclbar. represents a halogen atom, ClO.sub.4.sup..crclbar., or HgI.sub.3.sup..crclbar. ; or Y.sup..crclbar. is bound to R.sub.2, R.sub.2 represents an alkylene group having from 1 to 10 carbon atoms, and Y.sup..crclbar. represents a --COO.sup..crclbar. group, an --SO.sub.3.sup..crclbar. group, or an --OSO.sub.3.sup..crclbar. group.

    摘要翻译： 一种磁记录介质，包括在其一个表面上设置有磁记录层的支撑体，在另一表面上具有包含分散在粘合剂中的非磁性颗粒的背衬层，其中所述粘合剂包含氯乙烯/乙酸乙烯酯共聚物树脂，其含有 （I）或（II）表示的至少一个基团：其中X表示-COO-基团，-CONH-基团或-C 6 H 4 - 基团; n表示1〜10的整数， R1，R2和R3各自表示氢原子，具有1至10个碳原子的烷基或具有1至10个碳原子的烷基衍生物，或者R1，R2和R3可以彼此结合形成 杂环; Y（ - ）表示卤素原子，ClO 4（ - ）或HgI 3（ - ）; 或Y（ - ）与R 2结合，R 2表示具有1〜10个碳原子的亚烷基，Y（ - ）表示-COO（ - ）基，-SO 3（ - ）基或-OSO 3（ - ）组。

    Semiconductor processing device and IC card
    56.
    发明授权
    Semiconductor processing device and IC card 有权
    半导体处理装置和IC卡

    公开(公告)号：US08050085B2

    公开(公告)日：2011-11-01

    申请号：US10521553

    申请日：2002-08-29

    申请人： Masatoshi Takahashi ,  Takanori Yamazoe ,  Kozo Katayama ,  Toshihiro Tanaka ,  Yutaka Shinagawa ,  Hiroshi Watase ,  Takeo Kanai ,  Nobutaka Nagasaki

    发明人： Masatoshi Takahashi ,  Takanori Yamazoe ,  Kozo Katayama ,  Toshihiro Tanaka ,  Yutaka Shinagawa ,  Hiroshi Watase ,  Takeo Kanai ,  Nobutaka Nagasaki

    IPC分类号： G11C7/10 ,  G11C11/40

    CPC分类号： G07F7/1008 ,  G06Q20/341 ,  G06Q20/40975 ,  G07F7/084 ,  G11C11/005 ,  G11C16/0425 ,  G11C16/0433 ,  G11C16/16

    摘要： A semiconductor processing device according to the invention includes a first non-volatile memory (21) for erasing stored information on a first data length unit, a second non-volatile memory (22) for erasing stored information on a second data length unit, and a central processing unit (2), and capable of inputting/outputting encrypted data from/to an outside. The first non-volatile memory is used for storing an encryption key to be utilized for encrypting the data. The second non-volatile memory is used for storing a program to be processed by the central processing unit. The non-volatile memories to be utilized for storing the program and for storing the encryption key are separated from each other, and the data lengths of the erase units of information to be stored in the non-volatile memories are defined separately. Therefore, the stored information can efficiently be erased before the execution of a processing of writing the program, and the stored information can be erased corresponding to the data length of a necessary processing unit in the write of the encryption key to be utilized in the calculation processing of the CPU.

    摘要翻译： 根据本发明的半导体处理装置包括用于擦除第一数据长度单元上存储的信息的第一非易失性存储器（21），用于擦除第二数据长度单元上存储的信息的第二非易失性存储器（22），以及 中央处理单元（2），能够从/向外部输入/输出加密数据。 第一非易失性存储器用于存储要用于加密数据的加密密钥。 第二非易失性存储器用于存储要由中央处理单元处理的程序。 用于存储程序和用于存储加密密钥的非易失性存储器彼此分离，并且存储在非易失性存储器中的信息的擦除单元的数据长度被分开地定义。 因此，在执行写入程序的处理之前可以有效地擦除存储的信息，并且可以根据在计算中要使用的加密密钥的写入中的必要处理单元的数据长度来擦除存储的信息 处理CPU。

    Nonaqueous electrolyte secondary battery
    57.
    发明授权
    Nonaqueous electrolyte secondary battery 有权
    非水电解质二次电池

    公开(公告)号：US07604901B2

    公开(公告)日：2009-10-20

    申请号：US10509756

    申请日：2003-06-23

    申请人： Kazuyasu Fujiwara ,  Masatoshi Takahashi ,  Masato Iwanaga

    发明人： Kazuyasu Fujiwara ,  Masatoshi Takahashi ,  Masato Iwanaga

    IPC分类号： H01M1/40

    CPC分类号： H01M10/0569 ,  H01M10/0525 ,  H01M10/0567

    摘要： A non-aqueous electrolyte secondary cell that has excellent high-temperature cycle characteristics and that is highly safe enough to prevent overcharge is provided. The non-aqueous electrolyte secondary cell has a positive electrode for reversibly intercalating-deintercalating lithium ions, a negative electrode for reversibly intercalating-deintercalating lithium ions, and a non-aqueous electrolyte having a non-aqueous solvent and an electrolyte salt. The non-aqueous solvent includes a cycloalkylbenzene derivative and an alkylbenzene derivative having a quaternary carbon directly bonded to a benzene ring and not having a cycloalkyl group directly bonded to the benzene ring.

    摘要翻译： 提供具有优异的高温循环特性并且足够高以防止过充电的非水电解质二次电池。 非水电解质二次电池具有用于可逆地嵌入锂离子的正极，用于可逆地插入 - 脱嵌锂离子的负极和具有非水溶剂和电解质盐的非水电解质。 非水溶剂包括环烷基苯衍生物和具有与苯环直接键合并且不具有直接键合到苯环上的环烷基的季碳的烷基苯衍生物。

    Semiconductor processing device and IC card
    58.
    发明申请
    Semiconductor processing device and IC card 有权
    半导体处理装置和IC卡

    公开(公告)号：US20090213649A1

    公开(公告)日：2009-08-27

    申请号：US10521553

    申请日：2002-08-29

    申请人： Masatoshi Takahashi ,  Takanori Yamazoe ,  Kozo Katayama ,  Toshihiro Tanaka ,  Yutaka Shinagawa ,  Hiroshi Watase ,  Takeo Kanai ,  Nobutaka Nagasaki

    发明人： Masatoshi Takahashi ,  Takanori Yamazoe ,  Kozo Katayama ,  Toshihiro Tanaka ,  Yutaka Shinagawa ,  Hiroshi Watase ,  Takeo Kanai ,  Nobutaka Nagasaki

    IPC分类号： G11C11/34 ,  G11C16/04 ,  G11C5/14 ,  G06F12/14

    CPC分类号： G07F7/1008 ,  G06Q20/341 ,  G06Q20/40975 ,  G07F7/084 ,  G11C11/005 ,  G11C16/0425 ,  G11C16/0433 ,  G11C16/16

    摘要： A semiconductor processing device according to the invention includes a first non-volatile memory (21) for erasing stored information on a first data length unit, a second non-volatile memory (22) for erasing stored information on a second data length unit, and a central processing unit (2), and capable of inputting/outputting encrypted data from/to an outside. The first non-volatile memory is used for storing an encryption key to be utilized for encrypting the data. The second non-volatile memory is used for storing a program to be processed by the central processing unit. The non-volatile memories to be utilized for storing the program and for storing the encryption key are separated from each other, and the data lengths of the erase units of information to be stored in the non-volatile memories are defined separately. Therefore, the stored information can efficiently be erased before the execution of a processing of writing the program, and the stored information can be erased corresponding to the data length of a necessary processing unit in the write of the encryption key to be utilized in the calculation processing of the CPU.

    摘要翻译： 根据本发明的半导体处理装置包括用于擦除第一数据长度单元上存储的信息的第一非易失性存储器（21），用于擦除第二数据长度单元上存储的信息的第二非易失性存储器（22），以及 中央处理单元（2），能够从/向外部输入/输出加密数据。 第一非易失性存储器用于存储要用于加密数据的加密密钥。 第二非易失性存储器用于存储要由中央处理单元处理的程序。 用于存储程序和用于存储加密密钥的非易失性存储器彼此分离，并且存储在非易失性存储器中的信息的擦除单元的数据长度被分开地定义。 因此，在执行写入程序的处理之前可以有效地擦除存储的信息，并且可以根据在计算中要使用的加密密钥的写入中的必要处理单元的数据长度来擦除存储的信息 处理CPU。

    Method for manufacturing solar cell and solar cell, and method for manufacturing semiconductor device
    59.
    发明申请
    Method for manufacturing solar cell and solar cell, and method for manufacturing semiconductor device 审中-公开
    太阳能电池和太阳能电池的制造方法以及半导体装置的制造方法

    公开(公告)号：US20090020158A1

    公开(公告)日：2009-01-22

    申请号：US11918719

    申请日：2006-04-11

    申请人： Hiroyuki Ohtsuka ,  Masatoshi Takahashi ,  Naoki Ishikawa ,  Shigenori Saisu ,  Toyohiro Ueguri ,  Satoyuki Ojima ,  Takenori Watabe ,  Takeshi Akatsuka ,  Tsutomu Onishi

    发明人： Hiroyuki Ohtsuka ,  Masatoshi Takahashi ,  Naoki Ishikawa ,  Shigenori Saisu ,  Toyohiro Ueguri ,  Satoyuki Ojima ,  Takenori Watabe ,  Takeshi Akatsuka ,  Tsutomu Onishi

    IPC分类号： H01L31/00 ,  H01L21/22 ,  B32B9/00

    CPC分类号： H01L21/2254 ,  H01L31/022425 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： The present invention is a method for manufacturing a solar cell by forming a p-n junction in a semiconductor substrate having a first conductivity type, wherein, at least: a first coating material containing a dopant and an agent for preventing a dopant from scattering, and a second coating material containing a dopant, are coated on the semiconductor substrate having the first conductivity type so that the second coating material may be brought into contact with at least the first coating material; and, a first diffusion layer formed by coating the first coating material, and a second diffusion layer formed by coating the second coating material the second diffusion layer having a conductivity is lower than that of the first diffusion layer are simultaneously formed by a diffusion heat treatment; a solar cell manufactured by the method; and a method for manufacturing a semiconductor device. It is therefore possible to provide the method for manufacturing the solar cell, which can manufacture the solar cell whose photoelectric conversion efficiency is improved at low cost and with a simple and easy method by suppressing surface recombination in a portion other than an electrode of a light-receiving surface and recombination within an emitter while obtaining ohmic contact; the solar cell manufactured by the method; and the method for manufacturing the semiconductor device.

    摘要翻译： 本发明是一种通过在具有第一导电类型的半导体衬底中形成pn结来制造太阳能电池的方法，其中至少包括：含有掺杂剂的第一涂层材料和用于防止掺杂剂散射的试剂，以及 包含掺杂剂的第二涂层材料涂覆在具有第一导电类型的半导体衬底上，使得第二涂层材料可以与至少第一涂层材料接触; 并且通过涂覆第一涂料形成的第一扩散层和通过涂覆第二涂料形成的第二扩散层，具有导电性的第二扩散层比第一扩散层的第二扩散层低，通过扩散热处理同时形成 ; 通过该方法制造的太阳能电池; 以及半导体装置的制造方法。 因此，可以提供制造太阳能电池的方法，该太阳能电池可以以低成本制造光电转换效率提高的太阳能电池，并且通过简单且容易的方法，通过抑制光的电极以外的部分的表面复合 - 接收表面并在发射体内复合，同时获得欧姆接触; 该方法制造的太阳能电池; 以及半导体装置的制造方法。

    Magnetic recording medium including a smooth coating layer on one side of the support
    60.
    发明授权
    Magnetic recording medium including a smooth coating layer on one side of the support 有权
    磁性记录介质包括在载体一侧的光滑涂层

    公开(公告)号：US07344786B2

    公开(公告)日：2008-03-18

    申请号：US10282145

    申请日：2002-10-29

    申请人： Mikio Tomaru ,  Masatoshi Takahashi ,  Hiroshi Hashimoto

    发明人： Mikio Tomaru ,  Masatoshi Takahashi ,  Hiroshi Hashimoto

    IPC分类号： G11B5/70

    CPC分类号： G11B5/738 ,  G11B5/70 ,  G11B5/7026 ,  G11B5/842 ,  Y10T428/31786

    摘要： A magnetic recording medium comprising a support having provided thereon a magnetic layer, wherein a smooth coating layer having a thickness of from 0.10 to 1 μm, surface roughness of 5 nm or less, and 20 or less per 900 μm2 of the protrusions having a height of 20 nm or more measured by an interatomic force microscope (AFM) is provided on the surface of at least one side of the support. And a method for producing a magnetic recording medium comprising a support having provided thereon a magnetic layer, which comprises providing a smooth coating layer having a thickness of from 0.10 to 1 μm, surface roughness of 5 nm or less, and 20 or less per 900 μm2 of the protrusions having a height of 20 nm or more measured by an interatomic force microscope (AFM) on the surface of at least one side of the support, and forming at least the magnetic layer on the smooth coating layer without performing rolling-up operation.

    摘要翻译： 一种磁记录介质，包括在其上设置有磁性层的支撑体，其中厚度为0.10至1μm，表面粗糙度为5nm或更小的平滑涂层以及每900μm2的20μm或更小的光滑涂层， 通过原子力显微镜（AFM）测量的具有20nm或更高的高度的突起的SUP>提供在支撑体的至少一侧的表面上。 以及一种用于制造磁记录介质的方法，所述磁记录介质包括其上设置有磁性层的载体，其包括提供厚度为0.10-1μm的光滑涂层，表面粗糙度为5nm以下，每900个为20个以下 通过原子力显微镜（AFM）在支撑体的至少一侧的表面上测量的具有20nm或更高的高度的突起的2μm以上，并且至少在该支撑体的至少一个面上形成磁性层 光滑的涂层，不进行卷起操作。