公开(公告)号：US20160343687A1

公开(公告)日：2016-11-24

申请号：US14716176

申请日：2015-05-19

申请人： Micron Technology, Inc.

发明人： Sameer S. Vadhavkar ,  Jaspreet S. Gandhi ,  James M. Derderian

IPC分类号： H01L25/065 ,  H01L23/373 ,  H01L21/78 ,  H01L25/00

CPC分类号： H01L25/0657 ,  H01L21/78 ,  H01L23/3675 ,  H01L23/373 ,  H01L23/3738 ,  H01L23/4012 ,  H01L23/5385 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/73 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/92242 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2225/06589 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2924/1437 ,  H01L2924/1438 ,  H01L2924/16235 ,  H01L2924/16251 ,  H01L2924/1632 ,  H01L2924/167 ,  H01L2224/83

摘要： Semiconductor device assemblies with heat transfer structures formed from semiconductor materials are disclosed herein. In one embodiment, a semiconductor device assembly can include a thermal transfer structure formed from a semiconductor substrate. The thermal transfer structure includes an inner region, an outer region projecting from the inner region, and a cavity defined in the outer region by the inner and outer regions. The semiconductor device assembly further includes a stack of first semiconductor dies in the cavity, and a second semiconductor die attached to the outer region of the thermal transfer structure and enclosing the stack of first semiconductor dies within the cavity.

摘要翻译： 本文公开了具有由半导体材料形成的传热结构的半导体器件组件。 在一个实施例中，半导体器件组件可以包括由半导体衬底形成的热传递结构。 热转印结构包括内部区域，从内部区域突出的外部区域和由内部区域和外部区域限定在外部区域中的空腔。 半导体器件组件还包括在空腔中的第一半导体管芯堆叠，以及附接到热传递结构的外部区域并且在空腔内封装第一半导体管芯堆叠的第二半导体管芯。

公开(公告)号：US09337119B2

公开(公告)日：2016-05-10

申请号：US14330900

申请日：2014-07-14

申请人： Micron Technology, Inc.

发明人： Sameer S. Vadhavkar ,  Xiao Li ,  Jaspreet S. Gandhi

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/34 ,  H01L23/31 ,  H01L25/065

CPC分类号： H01L23/34 ,  H01L23/10 ,  H01L23/3107 ,  H01L23/3677 ,  H01L23/4275 ,  H01L23/473 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/73 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/1703 ,  H01L2224/17181 ,  H01L2224/17519 ,  H01L2224/26145 ,  H01L2224/26175 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48145 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73257 ,  H01L2224/92125 ,  H01L2225/06506 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06589 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/157 ,  H01L2924/15787 ,  H01L2924/16195 ,  H01L2924/16235 ,  H01L2924/16251 ,  H01L2924/1627 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/00012

摘要： Semiconductor die assemblies having high efficiency thermal paths. In one embodiment, a semiconductor die assembly comprises a package support substrate, a first semiconductor die electrically mounted to the package support substrate, and a plurality of second semiconductor dies. The first die has a stacking site and a peripheral region extending laterally from the stacking site, and the bottom second semiconductor die is attached to the stacking site of the first die. The assembly further includes (a) a thermal transfer structure attached to the peripheral region of the first die that has a cavity in which the second dies are positioned and an inlet, and (b) an underfill material in the cavity. The underfill material has a fillet between the second semiconductor dies caused by injecting the underfill material into the cavity through the inlet port of the casing.

摘要翻译： 具有高效率热路径的半导体管芯组件。 在一个实施例中，半导体管芯组件包括封装支撑衬底，电气安装到封装支撑衬底的第一半导体管芯和多个第二半导体管芯。 第一模具具有堆叠位置和从堆叠位置​​横向延伸的周边区域，并且底部第二半导体管芯附接到第一管芯的堆叠位置。 组件还包括（a）附接到第一模具的周边区域的热转印结构，其具有第二模具所在的空腔和入口，以及（b）空腔中的底部填充材料。 底部填充材料在第二半导体管芯之间具有由底部填充材料通过壳体的入口注入空腔而引起的圆角。