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公开(公告)号:US20220083243A1
公开(公告)日:2022-03-17
申请号:US16948305
申请日:2020-09-11
Applicant: Micron Technology, Inc.
Inventor: Kishore Kumar Muchherla , Karl D. Schuh , Jiangang Wu , Mustafa N. Kaynak , Devin M. Batutis , Xiangang Luo
IPC: G06F3/06
Abstract: A system includes a memory device having multiple of dice and a processing device operatively coupled to the memory device. The processing device performs operations including receiving memory operations to program sets of pages of data across at least a subset of the plurality of dice and identifying a plurality of the sets of pages experiencing a variation in a data state metric satisfying a threshold criterion. The operations further include partitioning, into a set of partitions, a set of pages of the plurality of the sets of pages, programming the set of partitions to the plurality of dice, and storing, in a metadata table, at least one bit to indicate that the first set of pages is partitioned.
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公开(公告)号:US20210200637A1
公开(公告)日:2021-07-01
申请号:US16854429
申请日:2020-04-21
Applicant: Micron Technology, Inc.
Inventor: Xiangang Luo , Jianmin Huang , Lakshmi Kalpana K. Vakati , Harish R. Singidi
Abstract: Host data to be written to a storage area including a set of multiple planes of a memory device is received. A first parity generation operation based on a portion of the set of multiple planes of the host data to generate a set of multi-plane parity data is executed. The set of multi-plane parity data is stored in in a cache memory of a controller of a memory sub-system. A second parity generation operation based on the set of the multiple planes of the host data to generate a set of multi-page parity data is executed. The set of multi-page parity data in the cache memory of the controller of the memory sub-system is stored. A data recovery operation is performed based on the set of multi-plane parity data and the set of multi-page parity data.
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公开(公告)号:US20210191807A1
公开(公告)日:2021-06-24
申请号:US16723836
申请日:2019-12-20
Applicant: Micron Technology, Inc.
Inventor: Chun Sum Yeung , Falgun G. Trivedi , Harish Reddy Singidi , Xiangang Luo , Preston Allen Thomson , Ting Luo , Jianmin Huang
IPC: G06F11/10 , G06F11/07 , G06F12/02 , G06F12/0882
Abstract: A variety of applications can include apparatus and/or methods that provide parity data protection to data in a memory system for a limited period of time and not stored as permanent parity data in a non-volatile memory. Parity data can be accumulated in a volatile memory for data programmed via a group of access lies having a specified number of access lines in the group. A read verify can be issued to selected pages after programming finishes at the end of programming via the access lines of the group. With the programming of the data determined to be acceptable at the end of programming via the last of the access lines of the group, the parity data in the volatile memory can be discarded and accumulation can begin for a next group having a specified number of access lines. Additional apparatus, systems, and methods are disclosed.
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公开(公告)号:US20210132823A1
公开(公告)日:2021-05-06
申请号:US17051961
申请日:2019-05-07
Applicant: Micron Technology, Inc.
Inventor: Xiangang Luo , Harish Reddy Singidi , Ting Luo , Kishore Kumar Miuchherla
IPC: G06F3/06
Abstract: Systems and methods are disclosed, including maintaining an error recovery data structure for a set of codewords (CWs) in a storage system and performing error recovery for the set of CWs using a set of error handing (EH) steps until each CW of the set of CWs are indicated as correctable in the error recovery data structure. The error recovery can include determining if each CW of the set of CWs is correctable by an EH step, storing indications of CWs determined correctable by the EH step in the error recovery data structure, determining if one or more CW in the set of CWs are not indicated as correctable in the error recovery data structure, and, in response to determining that one or more CW in the set of CWs are not indicated as correctable in the error recovery data structure, incrementing the specific EH step.
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公开(公告)号:US10789126B2
公开(公告)日:2020-09-29
申请号:US16155573
申请日:2018-10-09
Applicant: Micron Technology, Inc.
Inventor: Harish Reddy Singidi , Xiangang Luo , Preston Thomson , Michael G. McNeeley
Abstract: A variety of applications can include apparatus and/or methods that provide parity protection to data spread over multiple memory devices of a memory system. Parity is stored in a buffer, where the parity is generated from portions of data written to a page having a different portion of the page in a portion of each plane of one or more planes of the multiple memory devices. Parity is stored in the buffer for each page. In response to a determination that a transfer criterion is satisfied, the parity data in the buffer is transferred from the buffer to a temporary block. After programming data into the block to close the block, a verification of the block with respect to data errors is conducted. In response to passing the verification, the temporary block can be released for use in a next data write operation. Additional apparatus, systems, and methods are disclosed.
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公开(公告)号:US20240311029A1
公开(公告)日:2024-09-19
申请号:US18669038
申请日:2024-05-20
Applicant: Micron Technology, Inc.
Inventor: Kishore K. Muchherla , Jianmin Huang , Xiangang Luo
IPC: G06F3/06
CPC classification number: G06F3/064 , G06F3/0604 , G06F3/0679
Abstract: A method includes forming at least a portion of a first superblock using a first subset of blocks from at least one memory die of a memory sub-system and forming at least a portion of a second superblock using a second subset of blocks from the at least one memory die of the memory sub-system.
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公开(公告)号:US20240231676A1
公开(公告)日:2024-07-11
申请号:US18616006
申请日:2024-03-25
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Kishore Kumar Muchherla , Devin M. Batutis , Xiangang Luo , Mustafa N. Kaynak , Peter Feeley , Sivagnanam Parthasarathy , Sampath Ratnam , Shane Nowell
IPC: G06F3/06
CPC classification number: G06F3/0653 , G06F3/0604 , G06F3/0655 , G06F3/0679
Abstract: An amount of voltage shift is determined for one or more memory cells of a block family based on an initial reference value pertaining to the one or more memory cells and a subsequent reference value pertaining to the one or more memory cells. The block family is associated with a first voltage bin or a second voltage bin based on the determined amount of voltage shift. The first voltage bin is associated with a first voltage offset and the second voltage bin is associated with a second voltage offset.
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公开(公告)号:US20240168879A1
公开(公告)日:2024-05-23
申请号:US18386760
申请日:2023-11-03
Applicant: Micron Technology, Inc.
Inventor: Akira Goda , Kishore K. Muchherla , Shyam Sunder Raghunathan , Leo Raimondo , Jung Sheng Hoei , Xiangang Luo , Ashutosh Malshe , Jianmin Huang
IPC: G06F12/02
CPC classification number: G06F12/0246
Abstract: An apparatus can comprise a memory array comprising a plurality of strings of memory cells each comprising: a first group of memory cells coupled to a first group of access lines and corresponding to a first erase block; and a second group of memory cells coupled to a second group of access lines and corresponding to a second erase block. A controller is configured to determine a cumulative amount of read disturb stress experienced by the first erase block by monitoring read disturb stress experienced by the first erase block due to: read operations performed on the first erase block; read operations performed on the second erase block; and program verify operations performed on the second erase block. The controller can perform an action on the first erase block responsive to the cumulative amount of read disturb stress experienced by the first erase block meeting a criteria.
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公开(公告)号:US11966616B2
公开(公告)日:2024-04-23
申请号:US18175439
申请日:2023-02-27
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Kishore Kumar Muchherla , Devin M. Batutis , Xiangang Luo , Mustafa N. Kaynak , Peter Feeley , Sivagnanam Parthasarathy , Sampath Ratnam , Shane Nowell
CPC classification number: G06F3/0653 , G06F3/0604 , G06F3/0655 , G06F3/0679
Abstract: A current value for a reference voltage for a block family is determined. An amount of voltage shift for a memory page of the block family is determined based on the current value for the reference voltage and a prior value for the reference voltage. The block family is associated with a first voltage bin or a second voltage bin based on the determined amount of voltage shift. The first voltage bin is associated with a first voltage offset and the second voltage bin is associated with a second voltage offset.
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公开(公告)号:US11934268B2
公开(公告)日:2024-03-19
申请号:US18117555
申请日:2023-03-06
Applicant: Micron Technology, Inc.
Inventor: Jianmin Huang , Xiangang Luo , Kulachet Tanpairoj
CPC classification number: G06F11/1068 , G06F3/0619 , G06F3/064 , G06F3/0649 , G06F3/0679 , G06F11/076
Abstract: An example apparatus includes a media management superblock component configured to determine that a quantity of blocks of a superblock of a non-volatile memory array are bad blocks; compare the quantity of bad blocks to a bad block criteria; and write host data to the superblock with the quantity of bad blocks in response to the quantity of bad blocks meeting the bad block criteria. The use of the superblock with a particular quantity of bad block minimizes yield loss for non-use of partial superblocks.
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