System and apparatus for evaluating the effectiveness of wafer drying operations
    51.
    发明授权
    System and apparatus for evaluating the effectiveness of wafer drying operations 有权
    用于评估晶片干燥操作有效性的系统和设备

    公开(公告)号:US06611326B1

    公开(公告)日:2003-08-26

    申请号:US09752697

    申请日:2000-12-27

    IPC分类号: G01N2100

    摘要: Systems and apparatus for evaluating the effectiveness of wafer drying techniques are provided. The systems and apparatus include a laser or any other source configured to apply light radiation to the surface of a substrate that has been rinsed with a solution containing an analytically detectable compound prior to a drying process. Any residue of the analytically detectable compound is excited by the source, and the resulting energy is imaged with a confocal microscope or similar device to identify regions of the surface of the substrate of ineffective drying.

    摘要翻译: 提供了用于评估晶片干燥技术的有效性的系统和装置。 所述系统和装置包括激光器或任何其它源,其被配置为将光辐射施加到已经在干燥过程之前用含有可分析可检测化合物的溶液冲洗的基底的表面。 可分析检测的化合物的任何残余物被源激发,并且所得能量用共聚焦显微镜或类似装置成像,以鉴定无效干燥的基底表面的区域。

    Method and system for uniformly applying a multi-phase cleaning solution to a substrate
    52.
    发明授权
    Method and system for uniformly applying a multi-phase cleaning solution to a substrate 失效
    将多相清洗液均匀地涂布在基材上的方法和系统

    公开(公告)号:US08567421B2

    公开(公告)日:2013-10-29

    申请号:US13028091

    申请日:2011-02-15

    IPC分类号: B08B3/00

    摘要: An apparatus used to supply a force onto a cleaning solution for processing a substrate for cleaning surface contaminants is disclosed. The apparatus includes a force applicator and a gate. The force applicator is configured to be adjusted to a first height off the surface of the substrate. The gate is positioned adjacent to a trailing point of the force applicator and is configured to be adjusted to a second height off of the surface of the substrate to enable planarization of the cleaning solution as the solution moves to the trailing point.

    摘要翻译: 公开了一种用于向用于清洁表面污染物的基底处理清洁溶液提供力的装置。 该装置包括一个施力器和一个门。 力施加器构造成被调节到离开衬底表面的第一高度。 门被定位成与施力器的拖尾点相邻,并且被配置成被调节到离开衬底表面的第二高度,以便当溶液移动到拖尾点时使清洁溶液平坦化。

    Wafer edge surface treatment with liquid meniscus
    54.
    发明授权
    Wafer edge surface treatment with liquid meniscus 失效
    晶圆边缘表面处理液体半月板

    公开(公告)号:US07584761B1

    公开(公告)日:2009-09-08

    申请号:US11292465

    申请日:2005-12-02

    IPC分类号: B08B3/00

    摘要: A method for cleaning an edge surface of a semiconductor substrate is disclosed. The proximity head unit is positioned so that the flow head portion and the collection head portion of the proximity head unit are proximate to the edge surface of the semiconductor substrate. The semiconductor substrate is then rotated using one or more powered rollers. During the rotation of the semiconductor substrate, the flow head portion applies a fluid to the edge surface while the collection head portion collects fluid from the edge surface. Additional methods, an apparatuses, and a system for cleaning an edge surface of a semiconductor substrate are also described.

    摘要翻译: 公开了一种用于清洁半导体衬底的边缘表面的方法。 邻近头单元被定位成使得接近头单元的流动头部分和收集头部分靠近半导体衬底的边缘表面。 然后使用一个或多个动力辊旋转半导体衬底。 在半导体基板旋转期间,流动头部向边缘表面施加流体,而收集头部分从边缘表面收集流体。 还描述了另外的方法,装置和用于清洁半导体衬底的边缘表面的系统。

    Cleaning solutions for semiconductor substrates after polishing of copper film
    55.
    发明授权
    Cleaning solutions for semiconductor substrates after polishing of copper film 失效
    抛光铜膜后半导体衬底的清洗液

    公开(公告)号:US06593282B1

    公开(公告)日:2003-07-15

    申请号:US09037586

    申请日:1998-03-09

    IPC分类号: C11D1700

    摘要: A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and an ammonium compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.

    摘要翻译: 描述了在铜膜化学机械抛光之后清洗半导体衬底的清洁溶液,方法和设备。 本发明包括在酸性pH环境中结合去离子水,有机化合物和铵化合物的清洗溶液,用于在抛光铜层之后对半导体衬底的表面进行清洁。 这种在铜CMP之后清洁半导体衬底的方法减轻了与刷子加载和表面和地下污染相关的问题。

    Apparatuses and methods for cleaning a substrate
    56.
    发明授权
    Apparatuses and methods for cleaning a substrate 失效
    用于清洁基底的装置和方法

    公开(公告)号:US07625452B2

    公开(公告)日:2009-12-01

    申请号:US12210198

    申请日:2008-09-14

    摘要: A method for cleaning a substrate is provided. The method includes providing foam to a surface of the substrate, brush scrubbing the surface of the substrate, providing pressure to the foam, and channeling the pressured foam to produce jammed foam, the channeling including channeling the pressured foam into a gap, the gap being defined by a space between a surface of a brush enclosure and the surface of the substrate. The brush scrubbing of the surface of the substrate and the channeling of the pressured foam across the surface of the substrate facilitate particle removal from the surface of the substrate.

    摘要翻译: 提供一种清洗基板的方法。 该方法包括向基材的表面提供泡沫,刷洗基材的表面,向泡沫提供压力,以及引导加压的泡沫以产生堵塞的泡沫,所述通道包括将加压泡沫引导到间隙中,所述间隙为 由刷子壳体的表面和基板的表面之间的空间限定。 衬底表面刷毛洗涤和挤压泡沫穿过衬底的表面有助于颗粒从衬底表面移除。

    Method of damaged low-k dielectric film layer removal
    57.
    发明申请
    Method of damaged low-k dielectric film layer removal 失效
    损坏的低k电介质膜层去除方法

    公开(公告)号:US20090173718A1

    公开(公告)日:2009-07-09

    申请号:US11644779

    申请日:2006-12-21

    IPC分类号: C23F1/00 C23F1/08

    摘要: An apparatus, system and method for removing a damaged material from a low-k dielectric film layer include identifying a control chemistry, the control chemistry configured to selectively remove the damaged material from the low-k dielectric film layer, the damaged material being in a region where a feature was formed through the low-k dielectric film layer; establishing a plurality of process parameters characterizing aspects of the damaged material to be removed and applying the control chemistry to the low-k dielectric film layer, the application of the control chemistry being defined based on the established process parameters of the damaged material, such that the damaged material is substantially removed from the areas around the feature and the areas around the feature are substantially defined by low-k characteristics of the low-k dielectric film layer.

    摘要翻译: 用于从低k电介质膜层去除损坏的材料的装置,系统和方法包括识别控制化学物质,配置为选择性地从低k电介质膜层去除损坏的材料的控制化学品,损坏的材料在 通过低k电介质膜层形成特征的区域; 建立表征要去除的损坏材料的方面的多个工艺参数,并将控制化学物质应用于低k电介质膜层,控制化学品的应用基于已建立的损坏材料的工艺参数来定义,使得 损坏的材料基本上从特征周围的区域移除,并且特征周围的区域基本上由低k电介质膜层的低k特性限定。

    APPARATUS AND METHODS FOR OPTIMIZING CLEANING OF PATTERNED SUBSTRATES
    58.
    发明申请
    APPARATUS AND METHODS FOR OPTIMIZING CLEANING OF PATTERNED SUBSTRATES 审中-公开
    优化图案清洗清洗装置及方法

    公开(公告)号:US20090101166A1

    公开(公告)日:2009-04-23

    申请号:US12250955

    申请日:2008-10-14

    IPC分类号: B08B3/00

    CPC分类号: H01L21/02057 H01L21/67051

    摘要: Methods and apparatus for cleaning wafer surfaces are provided, especially for cleaning surfaces of patterned wafers. The cleaning apparatus includes a cleaning head with channels on the surface facing the patterned wafers which has a predominant pattern. Cleaning material flowing the channels exerts a shear force on the surface of a patterned wafer, which is oriented in a specific direction to the cleaning head. The shear force and the specific orientation between the patterned wafer and the cleaning head improve the removal efficiency of the surface contaminants.

    摘要翻译: 提供了用于清洁晶片表面的方法和装置,特别是用于清洁图案化晶片的表面。 清洁装置包括清洁头,其具有在面向图案化晶片的表面上的通道,其具有主要图案。 流动通道的清洁材料在图案化晶片的表面上施加剪切力,该图案化晶片的面向清洁头的特定方向。 图案化晶片和清洁头之间的剪切力和特定取向提高了表面污染物的去除效率。

    Method and apparatus for drying substrates using a surface tensions reducing gas
    60.
    发明申请
    Method and apparatus for drying substrates using a surface tensions reducing gas 审中-公开
    使用表面张力降低气体干燥基材的方法和装置

    公开(公告)号:US20080148595A1

    公开(公告)日:2008-06-26

    申请号:US11643479

    申请日:2006-12-20

    IPC分类号: F26B7/00 F26B21/00

    摘要: A method for processing a substrate using a proximity head is disclosed. The method is initiated by, providing a head with a head surface positioned proximate to a surface of the substrate. The head has a width and a length, and the head has a plurality of ports that are configured in rows along the length of the head. The plurality of rows can extend over a width of the head, and there is a first group of ports configured to dispense a first fluid. The first fluid is dispensed to the surface of the substrate forming a meniscus between the surface of the substrate and the surface of the head. The method also includes delivering gaseous carbon dioxide from a second group of ports of the head to an interface between the meniscus and the substrate. The carbon dioxide assists in promoting a reduced surface tension on the meniscus relative to surface of the substrate.

    摘要翻译: 公开了一种使用邻近头来处理衬底的方法。 该方法是通过提供具有靠近基板的表面定位的头表面的头来开始的。 头部具有宽度和长度,头部具有沿头部长度配置成行的多个端口。 多个行可以在头部的宽度上延伸,并且存在被配置为分配第一流体的第一组端口。 将第一流体分配到基材的表面,在基材的表面和头部表面之间形成弯液面。 该方法还包括将气态二氧化碳从头部的第二组端口输送到弯月面和基底之间的界面。 二氧化碳有助于相对于基底表面促进弯月面上的表面张力降低。