Method of and apparatus for washing photomask and washing solution for photomask
    51.
    发明授权
    Method of and apparatus for washing photomask and washing solution for photomask 有权
    光掩模的洗涤方法和洗涤方法及光掩模的洗涤液

    公开(公告)号:US07077915B2

    公开(公告)日:2006-07-18

    申请号:US10687701

    申请日:2003-10-20

    IPC分类号: B08B3/00

    CPC分类号: G03F1/82 G03F1/32 Y10S134/902

    摘要: Organic matter and metal impurities present on the surface of a photomask are removed. Foreign matter still adhering to the surface of the photomask is removed with H2 gas dissolved water. The photomask is dried. Thus provided is a method of washing a photomask in a manner which permits attaining an effect of removing foreign matter equivalent or superior to that of a conventional method with a small amount of chemical solution and reducing the amounts of chemicals and high purity water.

    摘要翻译: 去除存在于光掩模表面上的有机物质和金属杂质。 用H 2气溶解的水除去仍然附着于光掩模表面的异物。 光掩模被干燥。 因此,提供了以少量的化学溶液和减少化学品和高纯度水量的方式来洗涤光掩模的方法,该方法能够获得等同于或优于常规方法的异物的效果。

    Spark plug designed to enhance strength of joint of noble metal member to ground electrode
    54.
    发明申请
    Spark plug designed to enhance strength of joint of noble metal member to ground electrode 有权
    火花塞设计用于提高贵金属构件与接地电极接头的强度

    公开(公告)号:US20050134160A1

    公开(公告)日:2005-06-23

    申请号:US11007179

    申请日:2004-12-09

    申请人: Koji Yamanaka

    发明人: Koji Yamanaka

    CPC分类号: H01T13/39

    摘要: An improved structure of a spark plug is provided for improving the mechanical strength of joints between a noble metal member made of Ir-alloy and a ground electrode which withstands intense heat. The noble metal member is welded to the ground electrode through laser-fused portions. Each of the fused portion contains less than 40% by weight of Ir in a range defined inside an imaginary plane coinciding with an outer peripheral wall of the noble metal member before welded to the ground electrode, thereby enhancing the strength of the joints between the noble metal member made and the ground electrode.

    摘要翻译: 提供了一种改进的火花塞结构,用于提高由Ir合金制成的贵金属构件和承受强烈热量的接地电极之间的接头的机械强度。 贵金属构件通过激光熔合部焊接到接地电极。 每个熔融部分在焊接到接地电极之前,在与贵金属构件的外周壁重合的虚拟平面内限定的范围内包含小于40重量%的Ir,从而提高贵金属之间的接合强度 金属构件和接地电极。

    Organic porous material, process for manufacturing the same, and organic porous ion exchanger
    55.
    发明申请
    Organic porous material, process for manufacturing the same, and organic porous ion exchanger 有权
    有机多孔材料,其制造方法和有机多孔离子交换剂

    公开(公告)号:US20050023212A1

    公开(公告)日:2005-02-03

    申请号:US10929523

    申请日:2004-08-31

    摘要: An organic porous material having a continuous pore structure, which comprises interconnected macropores and mesopores with a radius of 0.01 to 100 μm in the walls of the macropores, having a total pore volume of 1 to 50 ml/g and having pore distribution curve characteristics wherein the value obtained by dividing the half-width of the pore distribution curve at the main peak by the radius at the main peak is 0.5 or less. The organic porous material is useful as an adsorbent having high physical strength and excelling in adsorption amount and adsorption speed, an ion exchanger excelling in durability against swelling and shrinkage, and a filler for chromatography exhibiting high separation capability.

    摘要翻译: 一种具有连续孔结构的有机多孔材料,其包含相互连接的大孔和在大孔壁中具有0.01至100μm的半径的介孔,其总孔体积为1至50ml / g并具有孔分布曲线特征,其中 通过将主峰处的孔分布曲线的半宽除以主峰的半径而得到的值为0.5以下。 有机多孔材料可用作具有高的物理强度并且吸附量和吸附速度优异的吸附剂,对膨胀和收缩的耐久性优异的离子交换剂和显示高分离能力的色谱填料。

    Method and apparatus for cleaning photomask
    58.
    发明授权
    Method and apparatus for cleaning photomask 有权
    清洗光掩模的方法和设备

    公开(公告)号:US06277205B1

    公开(公告)日:2001-08-21

    申请号:US09562929

    申请日:2000-05-02

    IPC分类号: C23F102

    CPC分类号: G03F1/82 G03F1/32 Y10S134/902

    摘要: To provide a photomask cleaning method which brings about a high effect of removing residual sulfuric acid or foreign objects and can remove foreign objects effectively without fluctuating the transmission or other properties of the light-shielding layer (MoSiON film) in a phase shift photomask. A method of cleaning a photomask which comprises a first step of cleaning the surface of a photomask used as a master in the photolithography step in the process for the production of semiconductor device with a hot mixture of sulfuric acid and hydrogen peroxide to decompose organic objects present thereon and remove metallic impurities, a second step of removing residual sulfuric acid from the surface of said photomask, a third step of removing foreign objects attached to the surface of said photomask, and a fourth step of drying said photomask which has finished with said first, second and third steps, characterized in that said second step involves the removal of residual sulfuric acid from the surface of said photomask with anodic water and said third step involves the removal of foreign objects with cathodic water.

    摘要翻译: 为了提供一种能够有效除去残留硫酸或异物的光掩模清洗方法,能够有效地除去异物,而不会波动相移光掩模中的遮光层(MoSiON膜)的透过率或其它特性。 一种清洁光掩模的方法,该方法包括:在用硫酸和过氧化氢的热混合物生产半导​​体器件的过程中,在光刻步骤中清洁用作母体的光掩模的表面的第一步骤,以分解其上存在的有机物质 并除去金属杂质,从所述光掩模的表面除去残余硫酸的第二步骤,除去附着在所述光掩模的表面上的异物的第三步骤,以及干燥所述光掩模的第四步骤,所述光掩模用所述第一, 第二和第三步骤,其特征在于所述第二步骤涉及从t去除残余的硫酸 所述光掩模的表面具有阳极水,并且所述第三步骤涉及用阴极水除去异物。